JPH0371788B2 - - Google Patents

Info

Publication number
JPH0371788B2
JPH0371788B2 JP56070698A JP7069881A JPH0371788B2 JP H0371788 B2 JPH0371788 B2 JP H0371788B2 JP 56070698 A JP56070698 A JP 56070698A JP 7069881 A JP7069881 A JP 7069881A JP H0371788 B2 JPH0371788 B2 JP H0371788B2
Authority
JP
Japan
Prior art keywords
insulating layer
cell
integrated circuit
cell rows
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56070698A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57186350A (en
Inventor
Michihiro Ikeda
Yoji Nishio
Nagaharu Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Industry and Control Solutions Co Ltd
Original Assignee
Hitachi Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Engineering Co Ltd
Priority to JP56070698A priority Critical patent/JPS57186350A/ja
Publication of JPS57186350A publication Critical patent/JPS57186350A/ja
Publication of JPH0371788B2 publication Critical patent/JPH0371788B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP56070698A 1981-05-13 1981-05-13 Semiconductor integrated circuit device Granted JPS57186350A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56070698A JPS57186350A (en) 1981-05-13 1981-05-13 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070698A JPS57186350A (en) 1981-05-13 1981-05-13 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57186350A JPS57186350A (en) 1982-11-16
JPH0371788B2 true JPH0371788B2 (OSRAM) 1991-11-14

Family

ID=13439092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56070698A Granted JPS57186350A (en) 1981-05-13 1981-05-13 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57186350A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691224B2 (ja) * 1983-01-24 1994-11-14 株式会社日立製作所 マスタスライス方式の半導体集積回路装置
JPWO2003001591A1 (ja) * 2001-06-25 2004-10-14 株式会社日立製作所 半導体集積回路、その設計方法、およびその設計システム

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1024661A (en) * 1974-06-26 1978-01-17 International Business Machines Corporation Wireable planar integrated circuit chip structure

Also Published As

Publication number Publication date
JPS57186350A (en) 1982-11-16

Similar Documents

Publication Publication Date Title
US6271548B1 (en) Master slice LSI and layout method for the same
CA2126479C (en) Symmetrical multi-layer metal logic array with continuous substrate taps and extension portions for increased gate density
KR100433025B1 (ko) 반도체장치,반도체집적회로장치,플립플롭회로,배타적논리합회로,멀티플렉서및가산기
US7989963B2 (en) Transistor circuit formation substrate
US4771327A (en) Master-slice integrated circuit having an improved arrangement of transistor elements for simplified wirings
JPH0434309B2 (OSRAM)
US4825273A (en) Semiconductor integrated circuit device
EP0598895A1 (en) Symmetrical multi-layer metal logic array with continuous substrate taps
JPH0371788B2 (OSRAM)
JPH0258871A (ja) ボーダーレスマスタスライス半導体装置
KR100233285B1 (ko) Cmos 로직 게이트 어레이
JPH0113223B2 (OSRAM)
JPH0475664B2 (OSRAM)
JPS60110137A (ja) 半導体装置
JPH0122734B2 (OSRAM)
JPH0371789B2 (OSRAM)
JPS6074647A (ja) 半導体集積回路装置
KR910001186B1 (ko) 고집적도 및 고속의 반도체메모리장치
JPH0329187B2 (OSRAM)
JPS5844592Y2 (ja) 半導体集積回路装置
JPS62263653A (ja) 半導体集積回路装置の製造方法
JPH0154861B2 (OSRAM)
JPS6342419B2 (OSRAM)
JPH0531310B2 (OSRAM)
JPS6298744A (ja) プログラマブルロジツクアレイ