JPH0368907A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPH0368907A JPH0368907A JP1205935A JP20593589A JPH0368907A JP H0368907 A JPH0368907 A JP H0368907A JP 1205935 A JP1205935 A JP 1205935A JP 20593589 A JP20593589 A JP 20593589A JP H0368907 A JPH0368907 A JP H0368907A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- package
- optical fiber
- semiconductor device
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000013307 optical fiber Substances 0.000 claims abstract description 20
- 229910001245 Sb alloy Inorganic materials 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 8
- 229910020935 Sn-Sb Inorganic materials 0.000 claims abstract 2
- 229910008757 Sn—Sb Inorganic materials 0.000 claims abstract 2
- 238000000034 method Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000004907 flux Effects 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光半導体装置に関し、特に厳しい環境下におい
て優れた信頼度を有する光半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical semiconductor device, and particularly to an optical semiconductor device that has excellent reliability under harsh environments.
光フアイバ通信の普及に伴ない、光半導体装置の使用環
境は多様化し、結果としてより厳しい環境（温度範囲）
下で、高い信頼度を保持することが要求されてきている
。従来、この種の光半導体装置はレーザダイオード素子
がパッケージ内に搭載され、このパッケージとセルフオ
フレンズ及び光ファイバが円筒状ホルダにより光学軸を
一致するように形成されている。通常円筒状ホルダへの
固定は５ｎ−Ｐｂ半田等が使用されている。With the spread of optical fiber communications, the environments in which optical semiconductor devices are used are diversifying, resulting in harsher environments (temperature ranges).
It has become necessary to maintain a high degree of reliability. Conventionally, in this type of optical semiconductor device, a laser diode element is mounted in a package, and this package, a self-off lens, and an optical fiber are formed by a cylindrical holder so that their optical axes coincide with each other. Usually, 5n-Pb solder or the like is used for fixing to the cylindrical holder.
上述した従来の光半導体装置は、パッケージと円筒状ホ
ルダの固定に５ｎ−Ｐｂ半田等が用いられているが、５
ｎ−Ｐｂ半田はクリープ現象をおこし、パッケージの微
小位置変位が生じ、結果として光学軸がずれるため光フ
アイバ出力が変動低下するという不具合がする。クリー
プ現象とはある材料の降伏応力以下の応力が長時間加え
られている時、その材料が歪を生ずる現象を言う。クリ
ープ現象は通常温度依存性を有し、次の式によることが
提唱されている（ドルソルーワートマンの実験式〉。In the conventional optical semiconductor device described above, 5n-Pb solder or the like is used to fix the package and the cylindrical holder.
The n-Pb solder causes a creep phenomenon, which causes minute positional displacement of the package, resulting in a shift in the optical axis, resulting in a problem that the optical fiber output fluctuates and decreases. Creep phenomenon refers to a phenomenon in which a material becomes distorted when a stress lower than its yield stress is applied for a long time. The creep phenomenon usually has a temperature dependence, and it has been proposed that it is based on the following formula (Dorsolu Wortman's empirical formula).
Δｅ＝ｃτ” ｔ ｅｘｐ（−Ｅ／ｋＴ）光半導体
装置の使用環境がより高温域（８５℃ンを要求されてい
るので、半田のクリープ現象に起因する光フアイバ出力
変動の問題は重要となってくる。Δe=cτ" t exp (-E/kT) Since the usage environment of optical semiconductor devices is required to be in a higher temperature range (85°C), the problem of optical fiber output fluctuations caused by solder creep has become important. It's coming.
上述した従来の光半導体装置に対し、本発明は８５℃の
高温で長時間放置されても半田のクリープ現象に起因す
る光フアイバ出力の変動がほとんど生じない光半導体装
置を提供するものである。In contrast to the above-mentioned conventional optical semiconductor device, the present invention provides an optical semiconductor device in which almost no fluctuation in optical fiber output due to solder creep occurs even if the device is left at a high temperature of 85° C. for a long time.
本発明の光半導体装置は、光半導体素子を搭載したパッ
ケージと光ファイバとレンズを保持・固定した円筒状ホ
ルダとの固定にＳｂを３〜１０％含む５ｎ−Ｓｂ合金（
以下Ｓ ｎ −３〜１０％Ｓｂと記す〉またはＰｂ−５
〜１５％Ｓｂの組成を持つ低融点合金を採用している。The optical semiconductor device of the present invention uses a 5n-Sb alloy containing 3 to 10% Sb to fix the package carrying the optical semiconductor element to the cylindrical holder that holds and fixes the optical fiber and lens.
Hereinafter referred to as S n -3 to 10% Sb〉 or Pb-5
A low melting point alloy with a composition of ~15% Sb is used.
我々は各種の低融点合金に関し、そのクリープ特性を評
価した。その結果の代表例を第３図に示す１図の縦軸は
クリープ量、横軸は時間を示し、５種類の合金に各々そ
の降伏応力の５０％の引張応力を加えた時の時間とクリ
ープ量を表わしている。（）内は各々の材料に加えた実
際の引張応力の大きさを示す。We evaluated the creep properties of various low melting point alloys. A representative example of the results is shown in Figure 3. In Figure 1, the vertical axis shows the amount of creep, and the horizontal axis shows time. represents quantity. The numbers in parentheses indicate the actual tensile stress applied to each material.
この結果はＡｕ−２０３ｎ合金がクリープが極めて小さ
く、５ｎ−５Ｓｂ、Ｐｂ−１０Ｓｂ。The results show that Au-203n alloy has extremely small creep, 5n-5Sb, and Pb-10Sb.
５ｎ−１０Ａｕ、５ｎ−３８Ｐｂの順にクリープ性大と
なることを示している。Ａｕ−２０８ｎ合金がクリープ
性は極めて良好であるが、Ａｕ−２０３ｎ合金の融点が
２８０℃と比較的高く、接合時の温度にＬＤパッケージ
が耐えられないことから使用できない。It is shown that the creep property increases in the order of 5n-10Au and 5n-38Pb. Although Au-208n alloy has extremely good creep properties, it cannot be used because the melting point of Au-203n alloy is relatively high at 280° C. and the LD package cannot withstand the temperature during bonding.
本発明の光半導体装置に用いる５ｎ−３〜１０％Ｓｂま
たはＰｂ−５〜１５％Ｓｂ合金のＳｂ比率はクリープ性
の程度と各々の合金の融点を考慮して決定している。The Sb ratio of the 5n-3 to 10% Sb or Pb-5 to 15% Sb alloy used in the optical semiconductor device of the present invention is determined in consideration of the degree of creep property and the melting point of each alloy.
次に、本発明について図面を参照して説明する。第１図
は本発明の一実施例の縦断面図である。レーザダイオー
ド素子１１はパッケージ１２に搭載されており、レーザ
光はパッケージ１２の透明窓を介してセルフオフレンズ
１４により集光されて光フアイバーフェルール１６の中
心部に位置する光フアイバ１７に導かれる。パッケージ
１２、セルフオフレンズ１４及び光フアイバフェルール
１６は円筒ホルダ１５内で光学軸を一致するように固定
されている。パッケージ１２と円筒ボルダ１５は５ｎ−
３〜１０％Ｓｂ合金またはＰｂ−５〜１５％Ｓｂ合金１
３によって接合されている。接合方法は加熱方式として
高周波誘導加熱による方式が採用されており５ｎ−３〜
１０％Ｓｂ合金、Ｐｂ−５〜１５％Ｓｂ合金の濡れ性を
向上させる為、フラックスを用いて接合される。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a longitudinal sectional view of an embodiment of the present invention. The laser diode element 11 is mounted on a package 12 , and the laser light is focused by a self-off lens 14 through a transparent window of the package 12 and guided to an optical fiber 17 located at the center of an optical fiber ferrule 16 . The package 12, self-off lens 14, and optical fiber ferrule 16 are fixed within the cylindrical holder 15 so that their optical axes coincide. The package 12 and the cylindrical boulder 15 are 5n-
3-10% Sb alloy or Pb-5-15% Sb alloy 1
3. The bonding method uses high-frequency induction heating as the heating method, and 5n-3~
In order to improve the wettability of the 10% Sb alloy and the Pb-5 to 15% Sb alloy, flux is used to bond them.
この光半導体装置は接合材のクリープによる光学軸ズレ
が発生しにくい。This optical semiconductor device is less prone to optical axis misalignment due to creep of the bonding material.
第２図は本発明の実施例２の縦断面図である。FIG. 2 is a longitudinal sectional view of Example 2 of the present invention.
レーザダイオード素子１１はヒートシンク２２を介して
チップキャリア２３に搭載されている。The laser diode element 11 is mounted on a chip carrier 23 via a heat sink 22.
チップキャリア２３と取付板２５は５ｎ−３〜１０％Ｓ
ｂまたはＰｂ−５〜１５％Ｓｂ合金２４によって接合さ
れている。Chip carrier 23 and mounting plate 25 are 5n-3~10%S
b or Pb-5 to 15% Sb alloy 24.
この実施例は光ファイバ、セルフオフレンズとの光学結
合方法は定まっていないが、実施例１と同様クリープの
小さい５ｎ＝Ｓｂまたは５ｂ−Ｐｂ金合金採用している
ので取付板２５に対するレーザダイオード素子１１の位
置変位は起きにくくなっている。In this embodiment, the optical coupling method with the optical fiber and self-off lens is not determined, but as in the first embodiment, 5n=Sb or 5b-Pb gold alloy with small creep is used, so the laser diode element on the mounting plate 25 is used. 11 positional displacement is less likely to occur.
尚、実施例ではレーザダイオード素子を用いた例につい
て説明したが、発光ダイオード素子、フォトダイオード
素子等他の光半導体素子を用いてもよい。In the embodiment, an example using a laser diode element has been described, but other optical semiconductor elements such as a light emitting diode element and a photodiode element may be used.
以上説明したように本発明はクリープの小さい５ｎ−Ｓ
ｂ合金またＰｂ−Ｓｂ金合金パッケージとホルダの接合
材として用いているので光学軸ズしが８５℃に於いても
発生せず、光フアイバ出力が安定した光半導体装置を提
供することができる。As explained above, the present invention is a 5n-S with small creep.
Since the Pb alloy or the Pb--Sb gold alloy is used as a bonding material between the package and the holder, optical axis shift does not occur even at 85 DEG C., and an optical semiconductor device with stable optical fiber output can be provided.
第４図は８５℃における本発明の光半導体装置の信頼度
試験結果である。デルタＰｆ（％）は光フアイバ出力を
示すが長期にわたり安定しており、規格である±１０％
を充分満足する結果が得られた。FIG. 4 shows the reliability test results of the optical semiconductor device of the present invention at 85°C. Delta Pf (%) indicates the optical fiber output, which is stable over a long period of time and is within ±10% of the standard.
Results were obtained that fully satisfied the following.
本発明は厳しい温度環境下でも十分な耐用を持つ光半導
体装置を提供するものであり、その工業的価値は大きい
。The present invention provides an optical semiconductor device that has sufficient durability even under severe temperature environments, and has great industrial value.
１４・・・セルフオフレンズ、１５・・・円筒ホルダ、
１６・・・光フアイバフェルール、１７・・・光ファイ
バ。14... Self-off lens, 15... Cylindrical holder,
16... Optical fiber ferrule, 17... Optical fiber.
Claims (1)
ズ形を介して光学的に結合された光半導体装置に於いて
、光ファイバとレンズを保持しているホルダにパッケー
ジが、Ｓｂを３〜１０％含むＳｎ−Ｓｂ合金またはＳｂ
を５〜１５％含むＰｂ−Ｓｂ合金によって固定されてい
ることを特徴とする光半導体装置。In an optical semiconductor device in which a package carrying an optical semiconductor element and an optical fiber are optically coupled via a lens shape, the package contains 3 to 10% Sb in a holder holding the optical fiber and lens. Sn-Sb alloy or Sb
An optical semiconductor device, characterized in that it is fixed by a Pb-Sb alloy containing 5 to 15% of Pb-Sb.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1205935A JPH0368907A (en) | 1989-08-08 | 1989-08-08 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1205935A JPH0368907A (en) | 1989-08-08 | 1989-08-08 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0368907A true JPH0368907A (en) | 1991-03-25 |
Family
ID=16515168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1205935A Pending JPH0368907A (en) | 1989-08-08 | 1989-08-08 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0368907A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0555872A2 (en) * | 1992-02-14 | 1993-08-18 | Canon Kabushiki Kaisha | Optical apparatus for emitting light and automatic adjustment apparatus therefor |
| JP2006053183A (en) * | 2004-08-09 | 2006-02-23 | Sumitomo Electric Ind Ltd | Optical receptacle and optical module |
-
1989
- 1989-08-08 JP JP1205935A patent/JPH0368907A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0555872A2 (en) * | 1992-02-14 | 1993-08-18 | Canon Kabushiki Kaisha | Optical apparatus for emitting light and automatic adjustment apparatus therefor |
| US5351264A (en) * | 1992-02-14 | 1994-09-27 | Canon Kabushiki Kaisha | Optical apparatus for emitting light and automatic adjustment apparatus therefor |
| JP2006053183A (en) * | 2004-08-09 | 2006-02-23 | Sumitomo Electric Ind Ltd | Optical receptacle and optical module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR920010947B1 (en) | Semiconductor light emitting device its component and lens position adjusting method | |
| JPS62906A (en) | Electrooptic transducer | |
| JP2003262766A (en) | Optical coupler | |
| JPH05127050A (en) | Semiconductor laser module | |
| JPH10170769A (en) | Method for packaging optical element | |
| US6403233B1 (en) | Article comprising creep-resistant and stress-reducing solder | |
| JPH03120884A (en) | Semiconductor laser module | |
| JPH0368907A (en) | Optical semiconductor device | |
| JPH0497305A (en) | Optical semiconductor coupler | |
| JPH04359207A (en) | Laser diode coupling device and its assembling method | |
| JP2970635B2 (en) | Semiconductor laser module and metal ferrule | |
| JPH04343492A (en) | Optical semiconductor module | |
| JPH05323158A (en) | Laser diode coupler and its assembling method | |
| JPH02127605A (en) | Optical component device | |
| JPH0452636B2 (en) | ||
| JPS6365411A (en) | Fixing method for lens | |
| JPH0368906A (en) | Spherical lens parts | |
| JP3646692B2 (en) | Optical semiconductor element module | |
| JPH06289258A (en) | Semiconductor laser device | |
| JP2786325B2 (en) | Optical semiconductor module | |
| JPS5988886A (en) | Photo semiconductor device | |
| JPS6143494A (en) | Semiconductor laser module | |
| JPH11266053A (en) | Carrier mounting type semiconductor laser | |
| JPH06160672A (en) | Light source module | |
| JPS62130582A (en) | Semiconductor laser module |