JPS62130582A - Semiconductor laser module - Google Patents
Semiconductor laser moduleInfo
- Publication number
- JPS62130582A JPS62130582A JP27070685A JP27070685A JPS62130582A JP S62130582 A JPS62130582 A JP S62130582A JP 27070685 A JP27070685 A JP 27070685A JP 27070685 A JP27070685 A JP 27070685A JP S62130582 A JPS62130582 A JP S62130582A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- optical fiber
- coupling
- lens
- dip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は半導体レーザモジュールとくに光通信システム
用発光素子モジュールとして好適な半導体レーザモジュ
ールに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a semiconductor laser module, and particularly to a semiconductor laser module suitable as a light emitting element module for an optical communication system.
従来の光通信用デュアルインライン形レーザタイオード
モジュール（Ｄｕａｌ Ｉｎ１ｉｎｅ形Ｌａ５ｅｒ Ｄ
ｉｏｄｅＭｏｄｕｌ） （以下ＤＩ形ＬＤモジュール
という）はたとえばＮＥＣ技報ＶｏＬ、３８、Ｎｏ、２
１９８５ 、第８４頁乃至第８９頁の「光通信用ＤＩＰ
型ＬＤモジュール」に記載されている如く、レーザダイ
オードと、光ファイバとの結合に先球ファイバ結合方式
を採用したものが紹介されている。Conventional dual inline laser diode module for optical communication (Dual Inline type La5er D
iodeModul) (hereinafter referred to as DI type LD module) is described in, for example, NEC Technical Report Vol. 38, No. 2.
1985, pp. 84 to 89, “DIP for Optical Communication”
As described in ``LD Module,'' a device employing a spherical fiber coupling method for coupling a laser diode and an optical fiber has been introduced.
しかるに前記先球ファイバ結合方式は高い結合効率が得
られる反面、位置ずれによる結合劣化を生し易いため、
半導体レーザと先球ファイバとを同−の支持台で一体化
し、これによって位置ずれの発生を抑えるという方策が
採用されている。However, although the above-mentioned spherical fiber coupling method can obtain high coupling efficiency, it is easy to cause coupling deterioration due to positional deviation.
A measure has been adopted in which the semiconductor laser and the spherical fiber are integrated on the same support base, thereby suppressing the occurrence of misalignment.
また半導体レーザと先球ファイバとが１０〜３０μｍ程
度の微小間隔であって、半導体レーザのみを気室封止す
ることが困難であるので、光フアイバ部分でパッケージ
に気室封止固定を行なっている。In addition, the distance between the semiconductor laser and the spherical fiber is very small, about 10 to 30 μm, and it is difficult to seal the air chamber only for the semiconductor laser. Therefore, the air chamber is sealed and fixed to the package using the optical fiber part. There is.
そのため、先球ファイバは位置変動を防止する理由から
半導体レーザの近傍と気室封止部との二点で固定されて
いる。Therefore, the tip fiber is fixed at two points, near the semiconductor laser and at the air chamber sealing part, in order to prevent positional fluctuations.
ところが、前記パッケージは一般に金属材料が使用され
ているので、石英を主成分とする光ファイバとの間に熱
膨張率の差が生じ、これによって前記の如く二点で固定
されている光ファイバに周囲の温度の変化に伴って引張
あるいは圧縮応力が発生し、経年的に光ファイバの断線
が発生し易くなったり、気室封止部の損傷、位置変動の
防止のための固定部の損傷により位置変動が発生したり
するが、これらの点についての配慮がなされていない。However, since the package is generally made of metal, there is a difference in thermal expansion coefficient between the package and the optical fiber whose main component is quartz. Tensile or compressive stress occurs as the ambient temperature changes, and over time, optical fibers become more likely to break, damage to air chamber sealing parts, and damage to fixing parts to prevent positional fluctuations. Although positional fluctuations may occur, no consideration has been given to these points.
本発明は前記従来の問題点を解決し、高信頼性の気室封
止・結合を確保しうる半導体レーザモジュールを提供す
ることにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor laser module that solves the above-mentioned conventional problems and can ensure highly reliable air chamber sealing and coupling.
本発明は前記の目的を達成するため、半導体レー・ザと
光ファイバとの結合にレンズ結合方式を採用し、これに
よって気室封止をレンズ部で形成し、光ファイバに無理
な応力が発生するのを本質的に排除して高信頼性の気室
封止・結合を確保するようにしたことを特徴とするもの
である。In order to achieve the above object, the present invention adopts a lens coupling method for coupling a semiconductor laser and an optical fiber, thereby forming an air chamber seal in the lens part, which causes undue stress on the optical fiber. The present invention is characterized in that highly reliable air chamber sealing and coupling is ensured by essentially eliminating the
以下、本発明の一実施例を示す第１図について説明する
。Hereinafter, FIG. 1 showing an embodiment of the present invention will be described.
同図に示す如く、デュアルインラインパッケージ（Ｄｕ
ａｌ Ｉｎ１ｉｎｅ ＰａｃＫａｇｅ ） （以下Ｄ
ＩＲという）■内に半導体レーザ２およびモニタ用フォ
トダイオード３を並列に搭載し、その上面に金属板４を
シーム溶接により固定して内部を完全に気室封止パッケ
ージとしている。また前記ＤＩＰＩ内には前記半導体レ
ーザ２の光軸に一致する位置に中心軸を有する貫通穴５
を穿設し、この貫通穴５内に側面に金属被膜（図示せず
）を形成した集束形屈折率分布円柱レンズ（以下円柱レ
ンズという）６を嵌挿するとともにその外端部のハンダ
件部７内に封入されたハンダ８で固定している。さらに
前記ＤＩＰＴの外端面すなわち、前記半導体レーザ２お
よびモニタ用フォトダイオード３の各リード２ａ、３ａ
の取出し面１ａと直角な前記ハンダ付部７の形成された
面１ｂには支持部９を締着している。この支持部９内に
は前記半導体レーザ２の出射光がファイバＩＯを保持す
る光フアイバ保持部１１を嵌挿して半導体レーザ２と光
ファイバ１０との光結合を確保している。As shown in the figure, a dual inline package (Du
al In1ine PackKage) (hereinafter referred to as D
A semiconductor laser 2 and a monitoring photodiode 3 are mounted in parallel inside an IR (IR), and a metal plate 4 is fixed to the upper surface of the IR by seam welding to form a completely sealed package with an air chamber inside. Further, in the DIPI, a through hole 5 having a central axis coincident with the optical axis of the semiconductor laser 2 is provided.
A convergent gradient index cylindrical lens (hereinafter referred to as a cylindrical lens) 6 having a metal coating (not shown) formed on the side surface is inserted into the through hole 5, and a soldered portion at the outer end thereof is inserted. It is fixed with solder 8 sealed in 7. Further, the outer end face of the DIPT, that is, the leads 2a and 3a of the semiconductor laser 2 and the monitor photodiode 3,
A support portion 9 is fastened to a surface 1b on which the soldering portion 7 is formed, which is perpendicular to the extraction surface 1a. An optical fiber holding part 11 that holds the fiber IO is inserted into the support part 9 to ensure optical coupling between the semiconductor laser 2 and the optical fiber 10.
本発明による半導体レーザモジュールは前記の如く、外
力の加わらないハンダ件部７内にハンダ８を封入して円
柱レンズ６をＤＩＰＩに固定して気室封止をしているか
ら、気室封止のさいの円柱レンズ６の１員傷などを防止
することができる。As described above, the semiconductor laser module according to the present invention seals the air chamber by sealing the solder 8 in the solder part 7 to which no external force is applied and fixing the cylindrical lens 6 to the DIPI. It is possible to prevent single-member scratches on the small cylindrical lens 6.
また光ファイバ１０が従来より実績のある光コネクタプ
ラグと同様な光フアイバ保持部１１にて保持されている
から、断線などの光ファイバ１０の損傷を防止して高信
頼度を得ることができる。Further, since the optical fiber 10 is held by the optical fiber holding portion 11 similar to a conventional optical connector plug, it is possible to prevent damage to the optical fiber 10 such as disconnection and obtain high reliability.
つぎに第２図は本発明の他の一実施例を示す半導体レー
ザモジュールの断面図である。なお前記第１図に示す部
品と同一部品は第１図と同一の符号をもって示す。Next, FIG. 2 is a sectional view of a semiconductor laser module showing another embodiment of the present invention. Components that are the same as those shown in FIG. 1 are designated by the same reference numerals as in FIG. 1.
同図においては、光ファイバ１２が単一モードファイバ
にて形成され、この光ファイバ１２とモニタ用フォトダ
イオード３との結合効率を高めるため、モニタ用フォト
ダイオード３上に円柱レンズ６との間で共焦点光学系を
形成するように球レンズ１３を設置している。In the figure, the optical fiber 12 is formed of a single mode fiber, and in order to increase the coupling efficiency between the optical fiber 12 and the monitor photodiode 3, a cylindrical lens 6 is formed on the monitor photodiode 3. A ball lens 13 is installed to form a confocal optical system.
したがって本実施例においても前記第１図に示す実施例
と同等の効果を得ることができる。Therefore, in this embodiment as well, the same effects as in the embodiment shown in FIG. 1 can be obtained.
つぎに第３図は本発明のさらに他の一実施例を示す半導
体レーザモジュールの断面図である。なお、前記第１図
および第２図に示す部品と同一部品は第１図および第２
図と同一符号をもって示す。Next, FIG. 3 is a sectional view of a semiconductor laser module showing still another embodiment of the present invention. Note that parts that are the same as those shown in Figures 1 and 2 above are shown in Figures 1 and 2.
Illustrated with the same reference numerals as in the figure.
同図においては、前記第１図および第２図に示す円柱レ
ンズ６の代りに球レンズ１４を前記ＤＩＰ■の貫通穴５
内にハンダ１５にて封止する如く固定している。In this figure, a spherical lens 14 is installed in the through hole 5 of the DIP 1 instead of the cylindrical lens 6 shown in FIGS.
It is sealed and fixed inside with solder 15.
したがって、本実施例においても第１図に示す実施例と
同等の効果を得ることができる。Therefore, in this embodiment as well, effects similar to those of the embodiment shown in FIG. 1 can be obtained.
なお、前記実施例においては、集束形屈折率分布レンズ
として円柱レンズ６および球レンズ１４を使用した場合
について述べたが、これに限定されるものでなく、たと
えば先球加工した集束形屈折率微小凸レンズなど光の集
光効果を有する光学レイズも適用可能である。In the above embodiment, a case was described in which the cylindrical lens 6 and the spherical lens 14 were used as the focusing type gradient index lens, but the invention is not limited thereto. Optical laser beams that have a light condensing effect, such as a convex lens, can also be applied.
本発明は以上述べたる如く、気室封止部を外力の加わら
ない位置に設置しているので、気室封止のさい、集束形
層折率レンズなどが損傷するのを防止し、かつ気室封止
のさい光ファイバに熱応力が発生するのを防止して断線
などの損傷を防止することができる。As described above, in the present invention, since the air chamber sealing part is installed in a position where no external force is applied, it is possible to prevent damage to the converging layer refractive index lens, etc. when sealing the air chamber, and to prevent the air chamber from being damaged. It is possible to prevent thermal stress from being generated in the optical fiber during chamber sealing, thereby preventing damage such as wire breakage.
また、レンズ結合方式を採用しているので、位置変動に
よる結合劣化を発生しに＜＜シて安定な結合状態および
気室封止が得られるので高信頼性を確保することができ
る。Further, since a lens coupling method is adopted, a stable coupling state and air chamber sealing can be obtained without causing coupling deterioration due to positional fluctuations, and high reliability can be ensured.
第１図は本発明の一実施例を示す半導体レーザモジュー
ルの断面図、第２図は本発明の他の一実施例を示す半導
体レーザモジュールの断面図、第３図は本発明のさらに
他の一実施例を示す半導体レーザモジュールの断面図で
ある。
１・・・ＤＩＰ、２・・・半導体レーザ、３・・・モニ
タ用フォトダイオード、４・・・金属板、５・・・貫通
穴、６゜１４・・・集束形層折率レンズ、７・・・ハン
ダ付部、８゜１５・・・ハンダ、９・・・支持部、１０
．１２・・・光ファイバ、１１・・・光フアイバ保持部
、１３・・・球レンズ。FIG. 1 is a sectional view of a semiconductor laser module showing one embodiment of the invention, FIG. 2 is a sectional view of a semiconductor laser module showing another embodiment of the invention, and FIG. 3 is a sectional view of a semiconductor laser module showing another embodiment of the invention. FIG. 1 is a cross-sectional view of a semiconductor laser module showing one embodiment. DESCRIPTION OF SYMBOLS 1... DIP, 2... Semiconductor laser, 3... Photodiode for monitor, 4... Metal plate, 5... Through hole, 6°14... Focusing type layer refractive index lens, 7 ...Soldering part, 8゜15...Solder, 9...Supporting part, 10
．． 12... Optical fiber, 11... Optical fiber holding part, 13... Ball lens.
Claims (1)
イバと該半導体レーザおよび該光ファイバを光結合する
結合光学系とからなる半導体レーザモジュールにおいて
、前記半導体レーザ、モニタ用フォトダイオードおよび
結合光学系を収納する容器をデュアルインライン形パッ
ケージの如く形成し、該デュアルインライン形パッケー
ジの上記半導体レーザおよびモニタ用フォトダイオード
のリード取出面と直角な面に該デュアルインライン形パ
ッケージ内と貫通する如く上記半導体レーザの光軸に一
致する位置に貫通穴を穿設し、該貫通穴内に集束形屈折
率分布レンズを嵌挿し、該集束形屈折率分布レンズを貫
通穴内に気密封止する如く固定したことを特徴とする半
導体レーザモジュール。 ２、前記集束形屈折率分布レンズは円柱レンズまたは球
レンズにて構成されていることを特徴とする特許請求の
範囲第１項記載の半導体レーザモジュール。[Claims] 1. A semiconductor laser module comprising a semiconductor laser, a monitoring photodiode, an optical fiber, and a coupling optical system for optically coupling the semiconductor laser and the optical fiber, wherein the semiconductor laser, the monitoring photodiode, and the coupling optical system optically couple the semiconductor laser and the optical fiber. A container accommodating the coupling optical system is formed like a dual in-line package, and a surface perpendicular to the lead extraction surface of the semiconductor laser and the monitor photodiode of the dual in-line package is penetrated into the dual in-line package. A through hole was drilled at a position that coincided with the optical axis of the semiconductor laser, a convergent gradient index lens was inserted into the through hole, and the convergent gradient index lens was fixed in the through hole so as to be hermetically sealed. A semiconductor laser module characterized by: 2. The semiconductor laser module according to claim 1, wherein the convergent gradient index lens is composed of a cylindrical lens or a spherical lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27070685A JPS62130582A (en) | 1985-12-03 | 1985-12-03 | Semiconductor laser module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27070685A JPS62130582A (en) | 1985-12-03 | 1985-12-03 | Semiconductor laser module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62130582A true JPS62130582A (en) | 1987-06-12 |
Family
ID=17489824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27070685A Pending JPS62130582A (en) | 1985-12-03 | 1985-12-03 | Semiconductor laser module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62130582A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63316812A (en) * | 1987-06-19 | 1988-12-26 | Toshiba Corp | Photosemiconductor device |
| JPH01182709A (en) * | 1988-01-14 | 1989-07-20 | Nippon Telegr & Teleph Corp <Ntt> | Thickness measuring apparatus of semiconductor layer |
| US4995687A (en) * | 1988-11-18 | 1991-02-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device and a method of producing same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136387A (en) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | Light element module |
| JPS61200514A (en) * | 1985-03-01 | 1986-09-05 | Mitsubishi Electric Corp | Dual in-line package type laser diode module |
| JPS61226989A (en) * | 1985-04-01 | 1986-10-08 | Mitsubishi Electric Corp | Dual-in-line package type laser diode module |
-
1985
- 1985-12-03 JP JP27070685A patent/JPS62130582A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136387A (en) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | Light element module |
| JPS61200514A (en) * | 1985-03-01 | 1986-09-05 | Mitsubishi Electric Corp | Dual in-line package type laser diode module |
| JPS61226989A (en) * | 1985-04-01 | 1986-10-08 | Mitsubishi Electric Corp | Dual-in-line package type laser diode module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63316812A (en) * | 1987-06-19 | 1988-12-26 | Toshiba Corp | Photosemiconductor device |
| JPH01182709A (en) * | 1988-01-14 | 1989-07-20 | Nippon Telegr & Teleph Corp <Ntt> | Thickness measuring apparatus of semiconductor layer |
| US4995687A (en) * | 1988-11-18 | 1991-02-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device and a method of producing same |
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