JPH036830U

JPH036830U -

Info

Publication number: JPH036830U
Application number: JP6656189U
Authority: JP
Priority date: 1989-06-06
Filing date: 1989-06-06
Publication date: 1991-01-23

Description

[Brief explanation of drawings]

第１図は本考案電荷転送素子の要部平面図、第
２図は第１図の断面図、第３図はフレームトラン
スフア方式の固体撮像素子の電極構造を示す模式
的平面図、第４図は従来の電荷転送素子の平面図
、第５図は第４図の断面図である。 FIG. 1 is a plan view of essential parts of the charge transfer device of the present invention, FIG. 2 is a sectional view of FIG. 1, FIG. 3 is a schematic plan view showing the electrode structure of a frame transfer type solid-state image sensor, and FIG. The figure is a plan view of a conventional charge transfer element, and FIG. 5 is a cross-sectional view of FIG. 4.

Claims

[Claims for Utility Model Registration] (1) A plurality of first transfer electrodes arranged in parallel to each other on a semiconductor substrate; and a plurality of first transfer electrodes arranged in parallel to each other on a semiconductor substrate; A charge transfer element comprising: a plurality of second transfer electrodes; and a power supply line connected to an end of the first or second transfer electrode to supply a multiphase transfer clock to each transfer electrode, The power supply lines are provided in correspondence with the number of phases of the transfer clock, and the first transfer electrode and the second transfer electrode are connected to different power supply lines, and the power supply line connected to the second transfer electrode is A charge transfer element, characterized in that the charge transfer element is disposed on the transfer electrode side of a power supply line connected to the first transfer electrode. (2) The power supply line is arranged at both ends of the first and second transfer electrodes, and a transfer clock is supplied to each transfer electrode from both ends of the electrode. Charge transfer device.