JPH0363581U - - Google Patents
Info
- Publication number
- JPH0363581U JPH0363581U JP12506689U JP12506689U JPH0363581U JP H0363581 U JPH0363581 U JP H0363581U JP 12506689 U JP12506689 U JP 12506689U JP 12506689 U JP12506689 U JP 12506689U JP H0363581 U JPH0363581 U JP H0363581U
- Authority
- JP
- Japan
- Prior art keywords
- inclined surface
- little
- quartz crucible
- crucible
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第1図は従来の面取りをしていない石英ルツボ
の器壁の断面図、第2図および第3図は本考案の
面取り石英ルツボの器壁の断面図である。
α……傾斜面と上端面とのなす外角、β……傾
斜面と内壁面とのなす外角、l……傾斜面の幅。
FIG. 1 is a sectional view of the wall of a conventional quartz crucible without chamfering, and FIGS. 2 and 3 are sectional views of the wall of a chamfered quartz crucible according to the present invention. α: External angle between the slope and the upper end surface, β: External angle between the slope and the inner wall surface, l: Width of the slope.
Claims (1)
該傾斜面と上端面および内面とのなす外角がいず
れも60°以下であり、かつ、傾斜面の幅が1.
5mm以上であるシリコン単結晶引上げ用石英ルツ
ボ。 2 前記傾斜面を少しづつ角度を変えて複数の傾
斜面とした第1請求項の石英ルツボ。[Claims for Utility Model Registration] 1. An inclined surface is provided on the inner periphery of the upper end of the crucible,
The external angles formed by the inclined surface, the upper end surface, and the inner surface are all 60° or less, and the width of the inclined surface is 1.
A quartz crucible for pulling silicon single crystals with a diameter of 5 mm or more. 2. The quartz crucible according to claim 1, wherein the inclined surface is formed into a plurality of inclined surfaces by changing angles little by little.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1989125066U JPH0730693Y2 (en) | 1989-10-27 | 1989-10-27 | Quartz crucible for pulling silicon single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1989125066U JPH0730693Y2 (en) | 1989-10-27 | 1989-10-27 | Quartz crucible for pulling silicon single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0363581U true JPH0363581U (en) | 1991-06-20 |
JPH0730693Y2 JPH0730693Y2 (en) | 1995-07-12 |
Family
ID=31672952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1989125066U Expired - Fee Related JPH0730693Y2 (en) | 1989-10-27 | 1989-10-27 | Quartz crucible for pulling silicon single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0730693Y2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008002668A (en) * | 2006-06-26 | 2008-01-10 | Kurabo Ind Ltd | Vacuum thermal insulating material |
JPWO2017110763A1 (en) * | 2015-12-21 | 2018-06-28 | 株式会社Sumco | Silica glass crucible, silica glass crucible manufacturing method, silicon single crystal pulling apparatus, ingot and homoepitaxial wafer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5345318A (en) * | 1976-10-06 | 1978-04-24 | Toshiba Ceramics Co | Process and apparatus for preparing glass vessel and the like of high silica content |
JPS62129069U (en) * | 1986-02-05 | 1987-08-15 | ||
JPS63319288A (en) * | 1987-06-23 | 1988-12-27 | Shin Etsu Handotai Co Ltd | Flanged quartz crucible |
-
1989
- 1989-10-27 JP JP1989125066U patent/JPH0730693Y2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5345318A (en) * | 1976-10-06 | 1978-04-24 | Toshiba Ceramics Co | Process and apparatus for preparing glass vessel and the like of high silica content |
JPS62129069U (en) * | 1986-02-05 | 1987-08-15 | ||
JPS63319288A (en) * | 1987-06-23 | 1988-12-27 | Shin Etsu Handotai Co Ltd | Flanged quartz crucible |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008002668A (en) * | 2006-06-26 | 2008-01-10 | Kurabo Ind Ltd | Vacuum thermal insulating material |
JPWO2017110763A1 (en) * | 2015-12-21 | 2018-06-28 | 株式会社Sumco | Silica glass crucible, silica glass crucible manufacturing method, silicon single crystal pulling apparatus, ingot and homoepitaxial wafer |
Also Published As
Publication number | Publication date |
---|---|
JPH0730693Y2 (en) | 1995-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |