JPH0730693Y2 - Quartz crucible for pulling silicon single crystal - Google Patents
Quartz crucible for pulling silicon single crystalInfo
- Publication number
- JPH0730693Y2 JPH0730693Y2 JP1989125066U JP12506689U JPH0730693Y2 JP H0730693 Y2 JPH0730693 Y2 JP H0730693Y2 JP 1989125066 U JP1989125066 U JP 1989125066U JP 12506689 U JP12506689 U JP 12506689U JP H0730693 Y2 JPH0730693 Y2 JP H0730693Y2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- inclined surface
- single crystal
- silicon single
- quartz crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は面取りルツボに関する。さらに詳しくは、シリ
コン単結晶引上中に極めて転位発生率の少ない石英ルツ
ボに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to a chamfered crucible. More specifically, it relates to a quartz crucible having a very low dislocation generation rate during pulling of a silicon single crystal.
従来一般に用いられているシリコン単結晶引上げ用石英
ルツボは上端周縁部がルツボの壁とほぼ直角をなして平
面的に削られたものである（第１図）。この石英ルツボ
を用いてシリコン単結晶を引上げる場合、シリコン融液
面より発生するSiO蒸気がルツボの内壁に沿って上昇
し、ルツボの上端周縁部の付近で気流の乱れを生ずると
共に温度が低下して、第１図に示すように上端周縁部内
面にSiO等が析出する。このSiO等が経時的に生長して部
分的に融液中に落下すると、シリコン単結晶中で転位発
生の原因となる。A conventionally used quartz crucible for pulling a silicon single crystal has a top end peripheral portion which is cut flatly at a right angle to the wall of the crucible (FIG. 1). When pulling a silicon single crystal using this quartz crucible, the SiO vapor generated from the silicon melt surface rises along the inner wall of the crucible, causing airflow turbulence near the upper edge of the crucible and lowering the temperature. Then, as shown in FIG. 1, SiO or the like is deposited on the inner surface of the upper edge portion. If this SiO or the like grows over time and falls partially into the melt, it causes dislocations in the silicon single crystal.
本考案は、従来の上記問題に鑑み、ルツボ上端部の内側
周縁に傾斜面を設けてルツボ上端部での気流の乱れを生
じないようにすることによって、シリコン融液面から発
生する一酸化珪素蒸気に起因する石英の析出を防止して
従来の上記問題を解決したものである。In view of the above-mentioned problems of the prior art, the present invention provides an inclined surface on the inner peripheral edge of the upper end of the crucible to prevent turbulence of the air flow at the upper end of the crucible. This is a solution to the above-mentioned conventional problems by preventing the precipitation of quartz due to steam.
本考案によれば、シリコン融液面から発生する一酸化珪
素蒸気に起因する石英の析出を防止する傾斜面をルツボ
上端部の内側周縁に設けたシリコン単結晶引上げ用石英
ルツボであって、該傾斜面とルツボ上端面とのなす角度
および該傾斜面とルツボ内周面とのなす角度が何れも60
°以下であり、傾斜面の幅が1.5mm以上である石英ルヅ
ホが提供される。According to the present invention, there is provided a quartz single crystal pulling crucible for pulling a silicon single crystal, wherein an inclined surface for preventing precipitation of quartz due to silicon monoxide vapor generated from a silicon melt surface is provided on an inner peripheral edge of an upper end portion of the crucible. The angle formed between the inclined surface and the upper surface of the crucible and the angle formed between the inclined surface and the inner peripheral surface of the crucible are both 60
Provided is a quartz ludho having a width of not more than ° and an inclined surface having a width of not less than 1.5 mm.
本考案の石英ルツボ10はルツボの上端内側の周縁部に傾
斜面を設けた面取りルツボである。傾斜面は単一でもよ
くまた複数（段階的に屈曲した傾斜面）であっても良
い。傾斜面11と上端面12とのなす外角αおよび傾斜面と
内壁面13とのなす外角βはいずれも60°以下であり、傾
斜面の幅ｌが、1.5mm以上に形成される。傾斜面11と上
端面12および傾斜面11と内壁面13とのなす外角α、βの
いずれかが60°より大きいと、角部の曲りがきつくなる
ため、内壁面13に沿って上昇してきたSiO等のガスがそ
の付近で気流の乱れを生じ易く、温度の低下等と相まっ
てSiO2等が析出し易くなる。The quartz crucible 10 of the present invention is a chamfered crucible having an inclined surface on the inner peripheral edge of the upper end of the crucible. A single inclined surface may be used, or a plurality of inclined surfaces (inclined surfaces that are gradually bent) may be used. The external angle α formed by the inclined surface 11 and the upper end surface 12 and the external angle β formed by the inclined surface and the inner wall surface 13 are both 60 ° or less, and the width 1 of the inclined surface is formed to be 1.5 mm or more. If either of the external angles α, β formed by the inclined surface 11 and the upper end surface 12 and between the inclined surface 11 and the inner wall surface 13 is larger than 60 °, the corners are bent sharply, and thus they have risen along the inner wall surface 13. A gas such as SiO is likely to cause turbulence of the air flow in the vicinity thereof, and SiO 2 or the like is likely to be precipitated in combination with a decrease in temperature.
また前記傾斜度の幅ｌが1.5mmより短いと傾斜面が小さ
過ぎて気流の乱れを防止する効果がない。Further, if the width 1 of the inclination is less than 1.5 mm, the inclined surface is too small, and there is no effect of preventing turbulence of the air flow.
本考案の石英ルツボは内壁面の上端に傾斜面が形成され
ているのでSiOを含むガスが乱流を生じることなく外部
に流れるので該上端部分でのSiO2等の析出を効果的に防
止することができ、従って該石英ルツボを用いた場合、
SiO2の混入による転位の発生がなく、シリコン単結晶の
歩留りも向上する。In the quartz crucible of the present invention, since the inclined surface is formed at the upper end of the inner wall surface, the gas containing SiO flows to the outside without causing turbulent flow, so that the precipitation of SiO 2 etc. at the upper end portion is effectively prevented. Therefore, when the quartz crucible is used,
Dislocations are not generated due to mixing of SiO 2 , and the yield of silicon single crystals is improved.
実施例１〜４、比較例１〜２ 傾斜面と上端面とのなす外角をα、傾斜面と内壁面との
なす外角をβ、傾斜面の幅ｌについて、夫々次表に示す
値を有する石英ルツボを用いてシリコン単結晶を引上げ
た。Examples 1 to 4 and Comparative Examples 1 to 2 The external angle formed by the inclined surface and the upper end surface is α, the external angle formed by the inclined surface and the inner wall surface is β, and the width 1 of the inclined surface has the values shown in the following table. A silicon single crystal was pulled using a quartz crucible.
析出物の状態および有転位化率（単結晶1m当り転位発生
回数）を次表に示す。The following table shows the state of precipitates and the dislocation generation rate (the number of dislocations generated per 1 m of single crystal).
第１図は従来の面取りをしていない石英ルツボの器壁を
断面図、第２図および第３図は本考案の面取り石英ルツ
ボの器壁の断面図である。 α……傾斜面と上端面とのなす外角 β……傾斜面と内壁面とのなす外角 ｌ……傾斜面の幅FIG. 1 is a cross-sectional view of a conventional chamfered quartz crucible, and FIGS. 2 and 3 are cross-sectional views of the chamfered quartz crucible of the present invention. α: External angle between inclined surface and upper end surface β: External angle between inclined surface and inner wall surface l ... Width of inclined surface
Claims (1)
気に起因する石英の析出を防止する傾斜面をルツボ上端
部の内側周縁に設けたシリコン単結晶引上げ用石英ルツ
ボであって、該傾斜面とルツボ上端面とのなす角度およ
び該傾斜面とルツボ内周面とのなす角度がいずれも60°
以下であり、傾斜面の幅が1.5mm以上である石英ルツ
ボ。1. A quartz crucible for pulling up a silicon single crystal, wherein an inclined surface for preventing precipitation of quartz due to silicon monoxide vapor generated from a silicon melt surface is provided at an inner peripheral edge of an upper end portion of the crucible. The angle between the surface and the crucible upper end surface and the angle between the inclined surface and the crucible inner peripheral surface are both 60 °.
Quartz crucible with a width of the inclined surface of 1.5 mm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989125066U JPH0730693Y2 (en) | 1989-10-27 | 1989-10-27 | Quartz crucible for pulling silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989125066U JPH0730693Y2 (en) | 1989-10-27 | 1989-10-27 | Quartz crucible for pulling silicon single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0363581U JPH0363581U (en) | 1991-06-20 |
| JPH0730693Y2 true JPH0730693Y2 (en) | 1995-07-12 |
Family
ID=31672952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989125066U Expired - Fee Related JPH0730693Y2 (en) | 1989-10-27 | 1989-10-27 | Quartz crucible for pulling silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0730693Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008002668A (en) * | 2006-06-26 | 2008-01-10 | Kurabo Ind Ltd | Vacuum thermal insulating material |
| TW201732221A (en) * | 2015-12-21 | 2017-09-16 | Ｓｕｍｃｏ股份有限公司 | Strain measurement device for vitreous silica crucible, method for manufacturing silicon single crystal, method for measuring strain of vitreous silica crubible, phase difference map, ingot and homoepitaxial wafer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5345318A (en) * | 1976-10-06 | 1978-04-24 | Toshiba Ceramics Co | Process and apparatus for preparing glass vessel and the like of high silica content |
| JPH0616926Y2 (en) * | 1986-02-05 | 1994-05-02 | 信越石英株式会社 | Quartz glass crucible for pulling single crystal |
| JPS63319288A (en) * | 1987-06-23 | 1988-12-27 | Shin Etsu Handotai Co Ltd | Flanged quartz crucible |
-
1989
- 1989-10-27 JP JP1989125066U patent/JPH0730693Y2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0363581U (en) | 1991-06-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |