JPH0392774U - - Google Patents
Info
- Publication number
- JPH0392774U JPH0392774U JP15297689U JP15297689U JPH0392774U JP H0392774 U JPH0392774 U JP H0392774U JP 15297689 U JP15297689 U JP 15297689U JP 15297689 U JP15297689 U JP 15297689U JP H0392774 U JPH0392774 U JP H0392774U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- partition wall
- pulling
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
Description
第１図は本考案の実施例における半導体単結晶
引上装置用ルツボの断面図、第２図は従来の半導
体単結晶引上装置用ルツボの断面図、第３図は本
考案及び従来のルツボを用いた場合の単結晶の固
化率と抵抗率のばらつきとの関係を示す図である
。
１……ルツボ本体、２……隔壁、３……流入孔
。
FIG. 1 is a sectional view of a crucible for a semiconductor single crystal pulling device according to an embodiment of the present invention, FIG. 2 is a sectional view of a conventional crucible for a semiconductor single crystal pulling device, and FIG. 3 is a sectional view of a crucible of the present invention and a conventional crucible. FIG. 3 is a diagram showing the relationship between the solidification rate of a single crystal and the variation in resistivity when using a single crystal. 1... Crucible body, 2... Partition wall, 3... Inflow hole.
Claims (1)
によつて外室と内室とに分割された二重構造を有
するルツボにおいて、前記隔壁を傾斜させたこと
を特徴とする半導体単結晶引上装置用ルツボ。 A device for pulling a semiconductor single crystal, characterized in that the crucible is used in a device for pulling a semiconductor single crystal and has a double structure divided into an outer chamber and an inner chamber by a partition wall, the partition wall being inclined. crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15297689U JPH0392774U (en) | 1989-12-28 | 1989-12-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15297689U JPH0392774U (en) | 1989-12-28 | 1989-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0392774U true JPH0392774U (en) | 1991-09-20 |
Family
ID=31699209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15297689U Pending JPH0392774U (en) | 1989-12-28 | 1989-12-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0392774U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014513034A (en) * | 2011-05-06 | 2014-05-29 | ジーティー アドヴァンスト シーズィー， エルエルシー | Growth of uniformly doped silicon ingot by doping only the first charge |
-
1989
- 1989-12-28 JP JP15297689U patent/JPH0392774U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014513034A (en) * | 2011-05-06 | 2014-05-29 | ジーティー アドヴァンスト シーズィー， エルエルシー | Growth of uniformly doped silicon ingot by doping only the first charge |
| US10544517B2 (en) | 2011-05-06 | 2020-01-28 | Gtat Ip Holding Llc. | Growth of a uniformly doped silicon ingot by doping only the initial charge |