JPH0362921A - Vapor growth apparatus for organic metal - Google Patents
Vapor growth apparatus for organic metalInfo
- Publication number
- JPH0362921A JPH0362921A JP19896589A JP19896589A JPH0362921A JP H0362921 A JPH0362921 A JP H0362921A JP 19896589 A JP19896589 A JP 19896589A JP 19896589 A JP19896589 A JP 19896589A JP H0362921 A JPH0362921 A JP H0362921A
- Authority
- JP
- Japan
- Prior art keywords
- carrier gas
- organometallic compound
- pulp
- introducing
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title abstract description 6
- 239000002184 metal Substances 0.000 title abstract description 6
- 239000012159 carrier gas Substances 0.000 claims abstract description 36
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 150000002902 organometallic compounds Chemical class 0.000 claims description 42
- 125000002524 organometallic group Chemical group 0.000 claims description 11
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 238000010926 purge Methods 0.000 abstract description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 150000002736 metal compounds Chemical class 0.000 abstract description 2
- 241001052209 Cylinder Species 0.000 abstract 1
- 241000238557 Decapoda Species 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000252233 Cyprinus carpio Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は化合物半導体等の気相エピタキシャル成長させ
る装置に関したものであり、特に結晶成長を行なう前の
有機金属化合物ボンベを装置に取り付けた際に またｌ
よ 結晶成長を行なったあとに またζよ 有機金属化
合物ボンベを装置から取り外す際に 充分なパージを容
易に行なわしめるためのものであも
従来の技術
看板 化合物半導体の単結晶薄膜を形成する技術として
、大面積にわたる均一性および再現性等から有機金属気
相成長法（以下ＭＯＶＰＥ法と記す）が注目されていも
このＭＯＶＰＥ法は 制御性にも優れ 量産化にも適
していも
第５図に従来用いられているＭ○ＶＰＥ装置の有機金属
化合物の供給部分を示す。所定の温度に保たれた恒温槽
１中に有機金属化合物ボンベ２を入れ マスフローコン
トローラー３によりキャリアガスである高純度水素ガス
を正確に制御し 有機金属化合物ボンベ２内に導入する
ことにより所定量の有機金属化合物をリアクター内に導
入することができも ７、８は有機金属化合物ボンベの
パルプであり一般にダイアフラムパルプやベローパルプ
が使用されも ５．６、９、１０、１１．１５はＭＯＶ
ＰＥ装置のパルプであり、 ４、５．６は２方パルプ、
１１は３方パルス １０は４方パルプ、 １２はキャリ
アガス配管である。パルプ８とパルプ９の間は非常に短
く構成できも 例えばパルプ８とパルプ９をパルプ直結
にすると、有機金属化合物ボンベ２の取り付１す、取り
外し等を容易にするためや有機金属化合物ボンベの１ｎ
−ｏｕｔ間の距離がボンベ間で必ずしも一定ではなくパ
ルプ５とパルプ７の間は一般にフレキシブルな配管が用
いられなければならず、できる限り短くされているとは
い丸 たとえばキャリアガス配管１２は数１０センチメ
ートルにおよ４Ｚ発明が解決しようとする課題
最近は量子井戸構造等を利用した新構造素子の開発が進
水 数原子層のオーダーでの膜束 組成の制御性や化学
的に非常に活性なＡＩを多量に含んだ結晶薄膜の高品質
化が要求されていもこれらの前提となるのは有機金属化
合物をＭ○ＶＰＥ装置に取り付けて用いる阪 有機金属
化合物の品質を落とさないことであん しかしなが転上
述のような装置の構成では有機金属化合物ボンベをＭＯ
ＶＰＥ装置に取り付けた後、パルプ５とパルプ７の間の
キャリアガス配管１２がデッドスペースとなりかなり長
時間真空引きを行なって転有機金属化合物ボンベを取り
付ける際にキャリアガス配管１２内に混入した空気成分
は充分にはパージできないという課題があっｔも
課題を解決するための手段
本発明はかかる課題を解決するために 有機金属化合物
ボンベ内にキャリアガスを導入される配管を直接有機金
属化合物ボンベのｉｎ側に接続するのではなく、Ｔ字管
あるいは３方パルプを介して有機金属化合物ボンベに接
続されており、Ｔ字管の他方の接続口にはパルプを介し
て第２のキャリアガスを導入する配管が具備されてい太
あるいは３方パルプの他方の接続口にはパルプを介し
て第２のキャリアガスを導入する配管が具備されている
ことを特徴とする有機金属気相成長装置を提供するもの
であも
作用
上述のごとく有機金属化合物を送り出す第１のキャリア
ガス配管だけでなく、有機金属化合物ボンベと第１のキ
ャリアガス配管の間にＴ字管あるいは３方パルプを挿入
し これらの他の接続口にＴ字管の場合はパルプを介し
て、３方パルプの場合はそのまま第２のキャリアガス配
管を接続することにより、有機金属化合物ボンベを取り
付けたのム 有機金属化合物ボンベのパルプは締めてお
き、Ｔ字管に接続されているパルプあるいは３方パルプ
を開けて、第１のキャリアガス配管から第２のキャリア
ガス配管へたとえば高純度の水素ガス等を流すことによ
り、有機金属化合物ボンベと第１のキャリアガス配管間
にはデッドスペースは存在せず、有機金属化合物ボンベ
を取り付は時に配管に混入する空気成分は充分パージす
ることができも 真空引きと組み合わせるときわめて有
効な手段となん また有機金属化合物ボンベをＭ○ＶＰ
Ｅ装置から取り外す場合にＬ 本来有機金属化合物はｉ
ｎ側には付着しないはずである力支 長時間同有機金属
化合物ボンベを使用しているとｉｎ側にも若干の有機金
属化合物が付着している場合があり、有機金属化合物ボ
ンベを装置から取り外す隊 危険であるとともに装置を
汚染していた力ｔ 有機金属化合物ボンベのｉｎ側を充
分パージできるので、有機金属化合物ボンベの取り外し
に伴う、安全性が向上するとともに装置の汚染は全くな
くなっｔも
実施例
本発明の実施例を図を用いて詳細に説明する。[Detailed Description of the Invention] Industrial Application Field The present invention relates to an apparatus for vapor phase epitaxial growth of compound semiconductors, etc., and particularly when an organometallic compound cylinder is attached to the apparatus before crystal growth.
This is to facilitate sufficient purging when the organometallic compound cylinder is removed from the apparatus after crystal growth, but it is a conventional technique used to form single-crystal thin films of compound semiconductors. Although metal-organic vapor phase epitaxy (hereinafter referred to as MOVPE) has attracted attention due to its uniformity over a large area and reproducibility, this MOVPE method has excellent controllability and is suitable for mass production. The organometallic compound supply section of the M○VPE apparatus used is shown. An organometallic compound cylinder 2 is placed in a constant temperature bath 1 kept at a predetermined temperature, and a mass flow controller 3 accurately controls high-purity hydrogen gas as a carrier gas.By introducing it into the organometallic compound cylinder 2, a predetermined amount of An organometallic compound can be introduced into the reactor. 7 and 8 are organometallic compound cylinder pulps, and diaphragm pulp and bellows pulp are generally used. 5.6, 9, 10, and 11.15 are MOV.
Pulp from PE equipment, 4, 5.6 is two-way pulp,
11 is a three-way pulse, 10 is a four-way pulp, and 12 is a carrier gas pipe. The distance between pulp 8 and pulp 9 can be very short. 1n
The distance between - out is not necessarily constant between cylinders, and generally flexible piping must be used between pulp 5 and pulp 7, and it is made as short as possible.For example, the carrier gas piping 12 is several 10 Problems to be solved by centimeter and 4Z inventions Recently, the development of new structural elements using quantum well structures, etc. has been launched Film bundles on the order of several atomic layers Composition controllability and chemically very active Although there is a demand for higher quality crystalline thin films containing a large amount of AI, the prerequisite for these is that the quality of the organometallic compound used when attached to the M○VPE device is not compromised. In the configuration of the device as described above, the organometallic compound cylinder is
After installation in the VPE device, the carrier gas piping 12 between the pulps 5 and 7 becomes a dead space, and the vacuum is drawn for quite a long time to prevent air components from entering the carrier gas piping 12 when installing the organic metal compound cylinder. In order to solve the problem, the present invention has the problem that the carrier gas cannot be purged sufficiently. It is connected to the organometallic compound cylinder through a T-tube or a three-way pulp, and the second carrier gas is introduced through the pulp into the other connection port of the T-tube. To provide a metal organic vapor phase growth apparatus, characterized in that the other connecting port of the thick or three-way pulp is equipped with a pipe for introducing a second carrier gas through the pulp. However, as mentioned above, in addition to the first carrier gas piping that sends out the organometallic compound, a T-shaped pipe or three-way pulp is inserted between the organometallic compound cylinder and the first carrier gas pipe. If the organometallic compound cylinder is attached to the connection port, connect the pulp via the pulp in the case of a T-shaped pipe, or directly connect the second carrier gas pipe in the case of three-way pulp. The organometallic compound cylinder is then opened by opening the pulp or three-way pulp connected to the T-tube and flowing, for example, high-purity hydrogen gas from the first carrier gas pipe to the second carrier gas pipe. There is no dead space between the first carrier gas pipe and the air component that sometimes gets mixed into the pipe when an organometallic compound cylinder is installed, but it is an extremely effective method when combined with vacuuming. Also, M○VP for organometallic compound cylinders.
E When removing from the device, L is originally an organometallic compound.
Force support that should not adhere to the n side If the same organometallic compound cylinder is used for a long time, some organometallic compound may also adhere to the in side, so remove the organometallic compound cylinder from the equipment. Forces that were dangerous and contaminated the equipment Since the inside side of the organometallic compound cylinder can be sufficiently purged, safety is improved and there is no contamination of the equipment when the organometallic compound cylinder is removed. EXAMPLE An example of the present invention will be described in detail with reference to the drawings.
第１の実施例を第１図に示す。 ｌは恒温棟 ２は有機
金属ボンベたとえばＴＭＧ （）リメチルガリウム）、
３．４はマスフローコントローラ、 ５．６．９．１５
は２方パルス ９、１１は３方パルプ、 １０は４方バ
ルズ ７、８は有機金属ボンベ２に付いているパルス
１２、１３はキャリアガス配管、１４はパルス ２０は
Ｔ字管、２１は石英製リアクタコ ２２はカーボン製サ
セプター、２３は基板たとえばＧａＡｓ、２４は高周波
コイルであも 有機金属ボンベ２をＭＯＶＰＥ装置に取
り付ける場合、パルプ５、６．９、１５、１１゜１０は
すべて閉じておき、パルプ１４のみ開きＮｔを流しなが
ら取り付けも 有機金属ボンベ２を取り付けた後、パル
プ１４、６、１５、１１のみを開き、破線で示すように
高純度水素ガスを多量、たとえば１０１／ｍｉｎ流す。A first embodiment is shown in FIG. l is a thermostatic building; 2 is an organometallic cylinder such as TMG (limethyl gallium);
3.4 is mass flow controller, 5.6.9.15
is a 2-way pulse 9, 11 is a 3-way pulp, 10 is a 4-way pulse 7, 8 is a pulse attached to organometallic cylinder 2
12 and 13 are carrier gas pipes, 14 is a pulse, 20 is a T-tube, 21 is a quartz reactor, 22 is a carbon susceptor, 23 is a substrate such as GaAs, and 24 is a high frequency coil.The organic metal cylinder 2 is attached to the MOVPE device. In this case, all pulps 5, 6.9, 15, 11゜10 are closed, and only pulp 14 is opened and installed while flowing Nt.After installing organometallic cylinder 2, open only pulps 14, 6, 15, and 11. , a large amount of high-purity hydrogen gas is flowed, for example, at a rate of 101/min, as shown by the broken line.
この後、水素パージを停止しベントから真空引きを行な
う。これを何度か繰り返すことにより、キャリアガス配
管１２に混入した空気成分は完全に取り除かれる。After this, the hydrogen purge is stopped and the vent is evacuated. By repeating this several times, the air component mixed into the carrier gas pipe 12 is completely removed.
このようにして取り付けた有機金属化合物を用いて実際
に結晶成長を行なうと非ドープのＧａＡＳの場合、長期
間にわたりｎ≦ｌＸｌ０’″ｃｍ−”のエビが可能とな
った まｆ：、、ＴＭＡ（トリメチルアルミニウム）を
追加取り付けをおこなってＡｌＧａＡｓを成長を行なう
と非ドープの場合、ＧａＡｓと同様長期にわたりｎ≦１
ｘ １０ Ｉ′ｃ＋ｃ’のエビが可能となっ九 次に
第２の実施例について第２図を用いて説明する。第１の
実施例と異なる点はＴ字管２０とパルプ１４の働きを３
方パルプ１６で行うことであん 部品点数が少なくなる
とともに 第１の実施例ではキャリアガス配管１２から
みてパルプ１４の方向のＴ字管２０がデッドスペースと
なるが第２の実施例ではこのデッドスペースさえなくな
も 有機金属ボンベ２の取り付（す、取り外しおよびパ
ージの手順は第１の実施例と同じであも 第１の実施例
および第２の実施例ともにキャリアガス配管にヒーター
線を巻き、パージや真空引きの瓢 温度を上げることに
より、パージの効果をより一層上げることができる。実
際にエビを行なうと第１の実施例と同様非ドープのＧａ
Ａｓの場合、長期間にわたりｎ≦ｌ ｘ １０ ”ｃｍ
−’のエビが可能となった ま？、：、ＴＭＡ（）リメ
チルアルミニウム）を追加取り付けをおこなってＡｌＧ
ａＡｓを成長を行なうと非ドープの場合、ＧａＡｓと同
様長期にわたりｎ≦Ｉ Ｘ １０ ”ｃｌ’のエビが可
能となっ九
第３図に示す第３の実施例および第４図に示す第４の実
施例ではキャリアガス配管１２の一部を有機金属ボンベ
２の恒温槽ｌ内もしくは別の恒温槽内に入れであるもの
であも 有機金属ボンベ２の取り付（す、取り外し お
よびパージの手順は第１の実施例と同じである力曳 真
空引きやパージのとき恒温槽１の温度を上げておくと、
ヒーター線はど温度は上がらないがパージの効果は犬き
鶏また 有機金属ボンベ２を取り付けて、実際に結晶成
長を行う阪 第１のキャリアガスと有機金属を同じ温度
にできるので第１のキャリアガスの流量を変化させても
有機金属の供給量の直線性は保たれも 非ドープの場合
、第１および第２の実施例と同様のレベルである。組成
変動に関しては特にＡｌＧａＡｓ等の混晶をエビしたと
きの再現性に効果を発挿すも エビ毎の組成のばらつき
は±１％以内である。When crystal growth was actually carried out using the organometallic compound attached in this way, in the case of undoped GaAS, it was possible to achieve n≦lXl0'''cm-'' over a long period of time. If AlGaAs is grown by additionally attaching (trimethylaluminum), in the case of undoped, n≦1 for a long period of time as with GaAs.
x 10 I'c+c' shrimp is now possible 9 Next, a second embodiment will be explained using FIG. 2. The difference from the first embodiment is that the T-shaped tube 20 and the pulp 14 function in three ways.
By using the pulp 16, the number of parts is reduced, and in the first embodiment, the T-tube 20 in the direction of the pulp 14 when viewed from the carrier gas pipe 12 becomes a dead space, but in the second embodiment, this dead space The procedure for installing, removing, and purging the organometallic cylinder 2 is the same as in the first embodiment. The effect of purging can be further increased by increasing the temperature of purging and vacuuming.When actually performing purging, undoped Ga is used as in the first example.
In the case of As, n≦l x 10”cm over a long period of time
−' shrimp is now possible. , :, TMA (remethylaluminum) was additionally installed and AlG
When aAs is grown without doping, it becomes possible to grow n≦I x 10 "cl" over a long period of time as with GaAs. In the embodiment, a part of the carrier gas piping 12 is placed in the thermostatic chamber l of the organometallic cylinder 2 or in a separate thermostatic chamber. Power pulling is the same as in the first embodiment.If the temperature of the thermostatic chamber 1 is raised during vacuuming and purging,
Although the temperature of the heater wire does not rise, the purge effect is still very strong.Attach organometallic cylinder 2 and perform the actual crystal growth. Even if the gas flow rate is changed, the linearity of the amount of organic metal supplied is maintained. In the case of non-doping, the level is similar to that of the first and second embodiments. With regard to compositional fluctuations, it is particularly effective in reproducibility when mixing mixed crystals such as AlGaAs, but the variation in composition from shrimp to shrimp is within ±1%.
発明の効果
本発明の効果は次の通りである。有機金属気相成長では
有機金属化合物が非常に活性であるためＭＯＶＰＥ装置
はリアクター以外はすべてステンレス製でありリークタ
イトであるが有機金属化合物の取り付１す、取り外しの
胤 わずかとはいえ空気の混入は避けられなっかた力交
本発明により配管内への空気の混入は完全に防ぐこと
ができ、有機金属化合物の品質低下は全く起こらなくな
っ池特にＡＩを含む有機金属化合物を用いる暇 結晶薄
膜の品質低下がほとんど無く、大きな効果を発揮すも
非ドープのＧａＡｓの場合、長期間にわたりｎ≦Ｉ Ｘ
１０ ”ｃｒ”のエビが可能となったま；＃＝ＴＭＡ
（ｈリメチルアルミニウム）を追加取り付けをおこなっ
てＡ Ｉ ＧａＡｓを成長を行なうと非ドープの場合、
ＧａＡｓと同様長期にわたりｎ≦Ｉ Ｘ ｌ Ｏ”ｃｍ
−”のエビが可能となったまた組成変動に関してはエビ
毎の組成のばらつきが±１％以内であん 本発明により
、結晶成長の歩留まりが向上し 結果的にはデバイスの
低価格化に対する効果は非常に大である。Effects of the invention The effects of the invention are as follows. In organometallic vapor phase epitaxy, organometallic compounds are very active, so the entire MOVPE equipment except the reactor is made of stainless steel and is leak-tight; The present invention completely prevents air from entering the pipes, and there is no deterioration in the quality of organometallic compounds, especially when using organometallic compounds containing AI. There is almost no deterioration in quality, and it is highly effective.
For undoped GaAs, n≦I
10 "cr" shrimp became possible; #=TMA
When A I GaAs is grown by additionally attaching (h-limethylaluminum), in the undoped case,
As with GaAs, n≦I X l O”cm over a long period of time
In addition, the present invention improves the yield of crystal growth and has the effect of reducing the cost of devices. It's very large.
第１は 第２は 第３図および第４図はそれぞれ本発明
の第１の実施風 第２の実施風 第３の実施例および第
４の実施例の成長装置の要部を示す配管諷 第５図は従
来の装置の要部配管図であも
１・・・・・・恒温権 ２・・・・・・有機金属ボンベ
３．４・・・・・・マスフローコントローラ、５．６
．９．１５・・・・・・２方パルプ、 ７．８・・・・
・・パルプ、 １１・・・・・・３方パルプ、 １０・
・・・・・４方パルス １２・・・・・・第１のキャリ
アガス配管、 １３・・・・・・第２のキャリアガス配
管、 １４・・・・・・パルプ、２０・・・・・・Ｔ字
管、 １６・・・・・・３方パルス ２１・・・・・・
リアクター、２２・・・・・・サセプター、 ２３・・
・・・・基板 ２４・・・・・・高周波コイ／ｌｚ。3 and 4 are piping diagrams showing the main parts of the growth apparatus of the first embodiment, the second embodiment, the third embodiment, and the fourth embodiment of the present invention, respectively. Figure 5 is a piping diagram of the main parts of a conventional device. 1. Constant temperature control 2. Organometallic cylinder 3.4. Mass flow controller
．． 9.15...Two-way pulp, 7.8...
...Pulp, 11...Three-way pulp, 10.
...Four-way pulse 12...First carrier gas piping, 13...Second carrier gas piping, 14...Pulp, 20... ...T-tube, 16...3-way pulse 21...
Reactor, 22... Susceptor, 23...
... Board 24 ... High frequency carp/lz.
Claims (5)
のキャリアガスにより所定量リアクター内に導入するこ
とにより結晶成長を行う装置において、前記第１のキャ
リアガスを導入する配管はＴ字管を介して前記有機金属
化合物ボンベに接続されており、前記Ｔ字管の他方の接
続口にはパルプを介して第２のキャリアガスを導入する
配管が具備されていることを特徴とする有機金属気相成
長装置(1) The organometallic compound in the organometallic compound cylinder is
In the apparatus for performing crystal growth by introducing a predetermined amount of carrier gas into a reactor, the pipe for introducing the first carrier gas is connected to the organometallic compound cylinder via a T-shaped tube, An organometallic vapor phase growth apparatus characterized in that the other connection port of the double tube is equipped with a pipe for introducing a second carrier gas through the pulp.
のキャリアガスにより所定量リアクター内に導入するこ
とにより結晶成長を行う装置において、前記第１のキャ
リアガスを導入する配管は３方パルプを介して有機金属
化合物ボンベに接続されており、前記３方パルプの他方
の接続口には第２のキャリアガスを導入する配管が具備
されていることを特徴とする有機金属気相成長装置(2) The organometallic compound in the organometallic compound cylinder is
In this apparatus, a pipe for introducing the first carrier gas is connected to an organometallic compound cylinder via a three-way pulp, and the first carrier gas is connected to an organometallic compound cylinder via a three-way pulp. An organometallic vapor phase growth apparatus characterized in that the other connection port of the pulp is equipped with a pipe for introducing a second carrier gas.
のキャリアガスにより所定量リアクター内に導入するこ
とにより結晶成長を行う装置において、前記第１のキャ
リアガスを導入する配管は有機金属化合物ボンベと同温
度の恒温槽の中を通したのちＴ字管を介して前記有機金
属化合物ボンベに接続されており、前記Ｔ字管の他方の
接続口にはパルプを介して第２のキャリアガスを導入す
る配管が具備されていることを特徴とする有機金属気相
成長装置(3) The organometallic compound in the organometallic compound cylinder is
In an apparatus for crystal growth by introducing a predetermined amount of a carrier gas into a reactor, the pipe for introducing the first carrier gas passes through a constant temperature bath at the same temperature as the organometallic compound cylinder, and then is connected to a T-tube. The organometallic compound is connected to the organometallic compound cylinder through the T-tube, and the other connection port of the T-shaped tube is equipped with a pipe for introducing a second carrier gas through the pulp. Vapor phase growth equipment
のキャリアガスにより所定量リアクター内に導入するこ
とにより結晶成長を行う装置において、前記第１のキャ
リアガスを導入する配管は前記有機金属化合物ボンベと
同温度の恒温槽の中を通したのち３方パルプを介して有
機金属化合物ボンベに接続されており、前記３方パルプ
の他方の接続口には第２のキャリアガスを導入する配管
が具備されていることを特徴とする有機金属気相成長装
置。(4) The organometallic compound in the organometallic compound cylinder is
In an apparatus for crystal growth by introducing a predetermined amount of a carrier gas into a reactor, the piping for introducing the first carrier gas passes through a constant temperature bath at the same temperature as the organometallic compound cylinder, and An organometallic vapor phase growth apparatus, characterized in that it is connected to an organometallic compound cylinder via a pulp, and the other connection port of the three-way pulp is equipped with a pipe for introducing a second carrier gas. .
ステンレス製であることを特徴とする特許請求の範囲第
１項、第２項、第３項又は第４項のいずれかに記載の有
機金属気相成長装置。(5) The piping for introducing the first or second carrier gas is made of stainless steel. Metal-organic vapor phase epitaxy equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19896589A JPH0362921A (en) | 1989-07-31 | 1989-07-31 | Vapor growth apparatus for organic metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19896589A JPH0362921A (en) | 1989-07-31 | 1989-07-31 | Vapor growth apparatus for organic metal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0362921A true JPH0362921A (en) | 1991-03-19 |
Family
ID=16399875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19896589A Pending JPH0362921A (en) | 1989-07-31 | 1989-07-31 | Vapor growth apparatus for organic metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0362921A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006203208A (en) * | 2005-01-19 | 2006-08-03 | Samsung Electronics Co Ltd | Manufacturing apparatus of semiconductor element having four-way valve, controlling method of valve of the manufacturing apparatus of semiconductor element, and manufacturing method of semiconductor element using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6387723A (en) * | 1986-09-30 | 1988-04-19 | Fujitsu Ltd | Bubbler container |
-
1989
- 1989-07-31 JP JP19896589A patent/JPH0362921A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6387723A (en) * | 1986-09-30 | 1988-04-19 | Fujitsu Ltd | Bubbler container |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006203208A (en) * | 2005-01-19 | 2006-08-03 | Samsung Electronics Co Ltd | Manufacturing apparatus of semiconductor element having four-way valve, controlling method of valve of the manufacturing apparatus of semiconductor element, and manufacturing method of semiconductor element using the same |
| US9029244B2 (en) | 2005-01-19 | 2015-05-12 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
| US9406502B2 (en) | 2005-01-19 | 2016-08-02 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
| US9702041B2 (en) | 2005-01-19 | 2017-07-11 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
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