KR950032727A - Method for manufacturing gallium nitride single crystal thin film and apparatus therefor - Google Patents

Method for manufacturing gallium nitride single crystal thin film and apparatus therefor Download PDF

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KR950032727A
KR950032727A KR1019940010611A KR19940010611A KR950032727A KR 950032727 A KR950032727 A KR 950032727A KR 1019940010611 A KR1019940010611 A KR 1019940010611A KR 19940010611 A KR19940010611 A KR 19940010611A KR 950032727 A KR950032727 A KR 950032727A
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gallium nitride
thin film
single crystal
producing
crystal thin
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KR1019940010611A
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KR0124972B1 (en
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김향숙
이선숙
황진수
정필조
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강박광
재단법인 한국화학연구소
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Abstract

본 발명은 갈륨 나이트라이드 단결정 박막의 제조방법과 그 제조장치에 관한 것으로서, 더욱 상세하게는 갈륨 나이트라이드(Gallium Nitride, GaN)를 사파이어 단결정 표면에 헤테로에피탁시(heteroepitaxy)하게 단결정 박막으로 피복성장시키는 과정에 있어서, 별도에 알루미늄 금속원 공급 없이 사파이어의 결합자리에 질소원자를 치환시켜 알루미늄 나이트라이드(Aluminum Nitride, AiN)를 완충막으로 도입하고 그 위에 HVPE(Halide Vapor Phase Epitaxy)방법을 이용하여 결정결함이 적은 부르자이트형(wurtzite type)구조의 갈륨 나이트라이드 단결정 박막을 피복성장시키는 방법과 갈륨 나이트라이드 단결정 박막의 제조장치에 관한 것이다.The present invention relates to a method for manufacturing a gallium nitride single crystal thin film and a device for manufacturing the same. More specifically, gallium nitride (Gallium Nitride, GaN) is coated on a sapphire single crystal surface with a single crystal thin film heteroepitaxially. In the process, the aluminum nitride (Aluminum Nitride, AiN) is introduced into the buffer membrane by substituting nitrogen atoms at the bonding sites of the sapphire without supplying the aluminum metal source, and using the HVPE (Halide Vapor Phase Epitaxy) method thereon. The present invention relates to a method of coating and growing a gallium nitride single crystal thin film having a small crystal defect in a wurtzite type structure and an apparatus for producing a gallium nitride single crystal thin film.

Description

갈륨 나이트라이트 단결정 박막의 제조방법과 그 제조장치Method for manufacturing gallium nitrite single crystal thin film and apparatus therefor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 HVPE(Halide Vapor Phase Epitaxy)방법에 의한 갈륨 나이트라이드 단결정 박막의 제조장치이다.1 is an apparatus for producing a gallium nitride single crystal thin film by the method of halide vapor phase epitaxy (HVPE) according to the present invention.

Claims (13)

갈륨 나이트라이드 단결정 박막을 제조하는데 있어서, 사파이어 기판에 암모니아 가스를 흘려주어 알루미늄 나이트라이드 박막층을 입히고 그 위에 HVPE(Halide Vapor Phase Epitaxy)방법을 이용하여 헤테로에피탁시하게 갈륨 나이트라이드 단결정 박막을 피복 성장시키는 것을 특징으로 하는 갈륨 나이트라이드 단결정 박막의 제조방법.In manufacturing a gallium nitride single crystal thin film, ammonia gas is flowed through a sapphire substrate, and an aluminum nitride thin film layer is coated thereon, and the gallium nitride single crystal thin film is heteroepitaxially coated using a halide vapor phase epitaxy (HVPE) method. Method for producing a gallium nitride single crystal thin film, characterized in that. 제1항에 있어서, 상기 사파이어 기판은 산에칭 또는 수소에칭한 것임을 특징으로 하는 갈륨 나이트라이드 단결정 박막의 제조방법.The method of claim 1, wherein the sapphire substrate is acid etched or hydrogen etched. 제2항에 있어서, 상기 산에칭은 진한 황산과 진한 인산을 3:1의 비율로 혼합한 300~320℃의 진한 산용액에서 실시한 것임을 특징으로 하는 갈륨 나이트라이드 단결정 박막의 제조방법.The method of manufacturing a gallium nitride single crystal thin film according to claim 2, wherein the acid etching is performed in a concentrated acid solution at 300 to 320 DEG C mixed with concentrated sulfuric acid and concentrated phosphoric acid at a ratio of 3: 1. 제1항에 있어서, 상기 갈륨 나이트라이드 박막은 4~7cm의 슬롯확장관과 기판의 거리, 1.0~1.3ℓ/분의 암모니아가스 유속, 2×10-3~10×10-3ℓ/분의 염화수소가스 유속, 890~920℃의 갈륨금속 온도, 980~1075℃의 갈륨 나이트라이드 증착온도 조건에서 20~30분간 성장시키는 것을 특징으로 하는 갈륨 나이트라이드 단결정 박막의 제조방법.According to claim 1, wherein the gallium nitride thin film is a slot expansion tube of 4 ~ 7cm and the substrate, ammonia gas flow rate of 1.0 ~ 1.3l / min, 2 × 10 -3 ~ 10 × 10 -3 l / minute A method for producing a gallium nitride single crystal thin film, characterized in that it is grown for 20 to 30 minutes at hydrogen chloride gas flow rate, gallium metal temperature of 890 ~ 920 ℃, gallium nitride deposition temperature of 980 ~ 1075 ℃. 제1항에 있어서, 상기 갈륨 나이트라이드 박막의 성장속도는 0.1~0.5㎛/분인 것임을 특징으로 하는 갈륨 나이트라이드 단결정 박막의 제조방법.The method of claim 1, wherein the growth rate of the gallium nitride thin film is 0.1 ~ 0.5㎛ / min. 제1항에 있어서, 상기 갈륨 나이트라이드 박막은 부르자이트형 구조를 갖고 청색영역에서 광발광성이 관찰되는 것임을 특징으로 하는 갈륨 나이트라이드 단결정 박막의 제조방법.The method of claim 1, wherein the gallium nitride thin film has a burjite structure and photoluminescence is observed in a blue region. 반응기(1)와 반응기의 온도조절을 위한 세영역로(2) 및 반응기 내부로 기체를 공급하는 기체공급수단(3)으로 구성된 것임을 특징으로 하는 갈륨 나이트라이드의 제조장치.Apparatus for producing gallium nitride, characterized in that consisting of a reactor (1) and three zones for controlling the temperature of the reactor (2) and gas supply means for supplying gas into the reactor. 제7항에 있어서, 상기 반응기(1)는 운반기체 주입구(4) 염화수소가스 공급관(5), 암모니아가스 공급관(6), 갈륨 보우트(7) 및 반응기 보호관(8)이 설치되어 있는 것을 특징으로 하는 갈륨 나이트라이드의 제조장치.8. The reactor (1) according to claim 7, characterized in that the carrier gas inlet (4) is provided with a hydrogen chloride gas supply pipe (5), an ammonia gas supply pipe (6), a gallium boat (7) and a reactor protection pipe (8). Apparatus for producing gallium nitride. 제8항에 있어서, 상기 염화수소가스 공급관(5)을 통하여 유입된 염화수소 기체는 갈륨 보우트(7)에 흘러들어가 갈륨 클로라이드(GaCl)가스가 형성되도록 설치되어 있는 것을 특징으로 하는 갈륨 나이트라이드의 제조장치.9. The apparatus for producing gallium nitride according to claim 8, wherein the hydrogen chloride gas introduced through the hydrogen chloride gas supply pipe (5) flows into the gallium boat (7) so as to form gallium chloride (GaCl) gas. . 제8항에 있어서, 상기 반응기 보호관(8) 내부는 슬롯 확장관(9), 기판(10) 및 지지판(11)으로 구성된 것임을 특징으로 하는 갈륨 나이트라이드의 제조장치.9. The apparatus of claim 8, wherein the reactor protection tube (8) is comprised of a slot extension tube (9), a substrate (10) and a support plate (11). 제8항에 있어서, 상기 암모니아가스 공급관(6)을 통하여 유입된 암모니아 기체는 슬롯 확장관(9)에 공급되도록 설치되어 있는 것을 특징으로 하는 갈륨 나이트라이드의 제조장치.The apparatus for producing gallium nitride according to claim 8, wherein the ammonia gas introduced through the ammonia gas supply pipe (6) is installed to be supplied to the slot expansion pipe (9). 제7항에 있어서, 상기 세영역로(2)는 반응가스 도입 부분, 갈륨 금속 보우트 부분 및 갈륨 나이트라이드 증착 부분의 세영역으로 나누어지고 각 영역에는 칸탈선이 감겨있고, 특히 갈륨 나이트라이드 증착 부분은 칸탈선이 1회 더 감겨있는 것을 특징으로 하는 갈륨 나이트라이드의 제조장치.8. The thin zone (2) is divided into three zones of the reaction gas introduction portion, the gallium metal boat portion, and the gallium nitride deposition portion, and each region is wound with a cantal ray, in particular, a gallium nitride deposition portion. A device for producing gallium nitride, characterized in that the silver canal wire is wound once more. 제7항에 있어서, 상기 기체공급수단(3)은 유속 조절장치(13), 수소가스 봄베(14), 헬륨가스 봄베(15), 암모니아가스 봄베(16) 및 염화수소가스 봄베(17)로 구성된 것임을 특징으로 하는 갈륨 나이트라이드의 제조장치.The gas supply means (3) according to claim 7, wherein the gas supply means (3) comprises a flow rate control device (13), a hydrogen gas cylinder (14), a helium gas cylinder (15), an ammonia gas cylinder (16), and a hydrogen chloride gas cylinder (17). Apparatus for producing gallium nitride, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940010611A 1994-05-16 1994-05-16 Method of preparation for epitaxial film of gallium nitride KR0124972B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100388011B1 (en) * 2000-01-17 2003-06-18 삼성전기주식회사 SAW Filter by GaN single crystal thin film and A Method for Manufacturing It
KR100472260B1 (en) * 2002-08-09 2005-03-10 한국과학기술연구원 Method of Quality Enhancement for GaN Thin Film

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100477075B1 (en) * 2002-01-14 2005-03-17 엘지이노텍 주식회사 Nitride semiconductor fabrication method
KR101118742B1 (en) * 2009-09-24 2012-03-14 시스솔루션 주식회사 Apparatus and Method for III Group metal nitride growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100388011B1 (en) * 2000-01-17 2003-06-18 삼성전기주식회사 SAW Filter by GaN single crystal thin film and A Method for Manufacturing It
KR100472260B1 (en) * 2002-08-09 2005-03-10 한국과학기술연구원 Method of Quality Enhancement for GaN Thin Film

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