JPH0361630B2 - - Google Patents

Info

Publication number
JPH0361630B2
JPH0361630B2 JP58143539A JP14353983A JPH0361630B2 JP H0361630 B2 JPH0361630 B2 JP H0361630B2 JP 58143539 A JP58143539 A JP 58143539A JP 14353983 A JP14353983 A JP 14353983A JP H0361630 B2 JPH0361630 B2 JP H0361630B2
Authority
JP
Japan
Prior art keywords
single crystal
superconducting
melt
storage container
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58143539A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6036391A (ja
Inventor
Kinya Matsutani
Shunichi Yokota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP14353983A priority Critical patent/JPS6036391A/ja
Priority to US06/636,682 priority patent/US4565671A/en
Priority to GB08419677A priority patent/GB2144338B/en
Publication of JPS6036391A publication Critical patent/JPS6036391A/ja
Publication of JPH0361630B2 publication Critical patent/JPH0361630B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP14353983A 1983-08-05 1983-08-05 単結晶引上装置 Granted JPS6036391A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP14353983A JPS6036391A (ja) 1983-08-05 1983-08-05 単結晶引上装置
US06/636,682 US4565671A (en) 1983-08-05 1984-08-01 Single crystal manufacturing apparatus
GB08419677A GB2144338B (en) 1983-08-05 1984-08-02 Single crystal manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14353983A JPS6036391A (ja) 1983-08-05 1983-08-05 単結晶引上装置

Publications (2)

Publication Number Publication Date
JPS6036391A JPS6036391A (ja) 1985-02-25
JPH0361630B2 true JPH0361630B2 (enrdf_load_stackoverflow) 1991-09-20

Family

ID=15341096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14353983A Granted JPS6036391A (ja) 1983-08-05 1983-08-05 単結晶引上装置

Country Status (1)

Country Link
JP (1) JPS6036391A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2561072B2 (ja) * 1986-04-30 1996-12-04 東芝セラミツクス株式会社 単結晶の育成方法及びその装置
JPS62256789A (ja) * 1986-04-30 1987-11-09 Toshiba Ceramics Co Ltd 単結晶の育成装置
JPS63112489A (ja) * 1986-10-31 1988-05-17 Toshiba Ceramics Co Ltd 単結晶製造装置
JPS63274684A (ja) * 1987-05-06 1988-11-11 Furukawa Electric Co Ltd:The 化合物半導体単結晶の製造方法
JPS63270378A (ja) * 1987-04-28 1988-11-08 Furukawa Electric Co Ltd:The 化合物半導体単結晶の製造方法
JPS63285183A (ja) * 1987-05-18 1988-11-22 Furukawa Electric Co Ltd:The 化合物半導体単結晶の製造方法
JP2651481B2 (ja) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 超伝導材料の作製方法
JPH026700A (ja) * 1988-06-23 1990-01-10 Lonseal Corp 新規なビニル壁紙製造方法
JP4842455B2 (ja) * 2001-06-13 2011-12-21 コマツＮｔｃ株式会社 半導体単結晶引上げ装置及びそのライン構成

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033297A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体引上装置

Also Published As

Publication number Publication date
JPS6036391A (ja) 1985-02-25

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