JPH0361355A - Formation of thin garnet film - Google Patents

Formation of thin garnet film

Info

Publication number
JPH0361355A
JPH0361355A JP19419889A JP19419889A JPH0361355A JP H0361355 A JPH0361355 A JP H0361355A JP 19419889 A JP19419889 A JP 19419889A JP 19419889 A JP19419889 A JP 19419889A JP H0361355 A JPH0361355 A JP H0361355A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
chamber
garnet
disposed
superior
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19419889A
Inventor
Shigeto Matsuoka
Shinji Mino
Kenichi Ono
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/186Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering for applying a magnetic garnet film
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/08Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20Ferrites
    • H01F10/24Garnets
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering

Abstract

PURPOSE: To obtain a thin garnet film of superior quality at low temp. with superior reproducibility by carrying out sputtering in an electron cyclotron resonance plasma by the use of a garnet material as a target and depositing grains composed of garnet components onto a substrate.
CONSTITUTION: Microwaves of 2.456Hz are introduced 1 into a plasma formation chamber 2. At this time, solenoid coils 3A, 3B are disposed around the chamber 2 and electric power is supplied to the coils 3A, 3B from electric power sources 11A, 11B, respectively, to produce 875G as resonant magnetic field in the chamber 2, and a plasma 4 obtained in the chamber 2 is accelerated by means of a divergent magnetic field in a direction of a substrate 8 disposed in a specimen chamber 10. As a result, negative voltage is impressed on a plate target 5A disposed in the chamber 2 and an octagonal cylindrical target 5B disposed at the outlet from the chamber 2 to the chamber 10, respectively, and sputtering is carried out. On the other hand, a gaseous mixture of Ar and O2 is generally used as an electric discharge gas. By this method, grains composed of garnet components as raw materials constituting the targets 5A, 5B are deposited on the substrate 8, and a thin garnet film of superior quality can be formed at low temp. with superior reproducibility.
COPYRIGHT: (C)1991,JPO&Japio
JP19419889A 1989-07-28 1989-07-28 Formation of thin garnet film Pending JPH0361355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19419889A JPH0361355A (en) 1989-07-28 1989-07-28 Formation of thin garnet film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19419889A JPH0361355A (en) 1989-07-28 1989-07-28 Formation of thin garnet film

Publications (1)

Publication Number Publication Date
JPH0361355A true true JPH0361355A (en) 1991-03-18

Family

ID=16320585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19419889A Pending JPH0361355A (en) 1989-07-28 1989-07-28 Formation of thin garnet film

Country Status (1)

Country Link
JP (1) JPH0361355A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001041177A3 (en) * 1999-12-03 2001-12-13 Com Dev Ltd Production of a microwave device by applying a coating of yttrium-iron-garnet to the surface of the device to suppress secondary electron emission

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001041177A3 (en) * 1999-12-03 2001-12-13 Com Dev Ltd Production of a microwave device by applying a coating of yttrium-iron-garnet to the surface of the device to suppress secondary electron emission

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