JPH0238302A - Formation of superconducting thin film - Google Patents
Formation of superconducting thin filmInfo
- Publication number
- JPH0238302A JPH0238302A JP63188457A JP18845788A JPH0238302A JP H0238302 A JPH0238302 A JP H0238302A JP 63188457 A JP63188457 A JP 63188457A JP 18845788 A JP18845788 A JP 18845788A JP H0238302 A JPH0238302 A JP H0238302A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconducting thin
- film
- heat treatment
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 50
- 230000015572 biosynthetic process Effects 0.000 title abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims abstract description 5
- 238000001704 evaporation Methods 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 10
- 239000000470 constituent Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011575 calcium Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052716 thallium Inorganic materials 0.000 claims description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims 2
- 239000010408 film Substances 0.000 abstract description 22
- 229910002480 Cu-O Inorganic materials 0.000 abstract 1
- 230000008022 sublimation Effects 0.000 abstract 1
- 238000000859 sublimation Methods 0.000 abstract 1
- 239000002887 superconductor Substances 0.000 description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は酸化物超電導薄膜の形成方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming an oxide superconducting thin film.
１９８６年に銅、酸素を含む焼結体において高い臨界温
度をもつ超電導体が発見されて以来、さらに高い臨界温
度をもつ超電導体の探索、あるいはこれらの超電導体を
材料として用いるための研究が盛んに行なわれている。Since the discovery in 1986 of a superconductor with a high critical temperature in a sintered body containing copper and oxygen, research has been actively conducted to search for superconductors with even higher critical temperatures or to use these superconductors as materials. is being carried out.
将来の機能的デバイスへの応用を考えた場合には、上記
の超電導体を薄膜化することが重要であり、現在、良質
の薄膜を得るための研究開発も盛んに行なわれている。When considering the application to future functional devices, it is important to make the above-mentioned superconductors into thin films, and research and development to obtain high-quality thin films is currently being actively conducted.
上述の酸化物超電導体の薄膜を形成するには例えば、酸
化マグネシウム（ＭｇＯ）やチタン酸ストロンチウム（
ＳｒＴｉＯａ）の支持体の上にスパッタリング法や電子
ビーム蒸着法などによって薄膜を堆積する。この際の組
成の制御は、スパッタリングのターゲットに用いる焼結
体の金属成分の比をコントロールしたり、多元蒸着法を
用いて各各の蒸発量によってコントロールしたりする方
法が用いられている。膜の結晶性は、通常、成膜時の支
持体温度が室温から摂氏３００℃程度では非晶質であり
、また支持体温度が６００℃程度では多結晶体であるこ
とが知られており、結晶性を向上させ、酸素を十分に供
給するために、成膜後に酸素雰囲気中で熱処理を施して
いる。熱処理温度は非晶質膜については９００℃前後、
多結晶膜については６００℃程度で数時間の熱処理が行
なわれている。To form a thin film of the above-mentioned oxide superconductor, for example, magnesium oxide (MgO) or strontium titanate (
A thin film is deposited on the SrTiOa support by sputtering, electron beam evaporation, or the like. The composition is controlled by controlling the ratio of metal components in the sintered body used as the sputtering target, or by controlling the evaporation amount of each component using a multi-component vapor deposition method. It is known that the crystallinity of the film is usually amorphous when the support temperature during film formation is from room temperature to about 300 degrees Celsius, and polycrystalline when the support temperature is about 600 degrees Celsius. In order to improve crystallinity and supply sufficient oxygen, heat treatment is performed in an oxygen atmosphere after film formation. The heat treatment temperature is around 900℃ for amorphous films;
Polycrystalline films are heat treated at about 600° C. for several hours.
なお、最近発見された新しい酸化物超電導体としてＴＱ
−Ｂａ−Ｃａ−Ｃｕ−０があり、ネイチャー３３２．３
月３１日（１９８８年）第４２０〜４２２ （Ｎａｔｕ
ｒｅ ｖｏｊ、、３３２，３１Ｍａｒｃｈｌ ９８８
Ｐ４２０−４２２）に記載されている。Furthermore, TQ is a recently discovered new oxide superconductor.
-Ba-Ca-Cu-0, Nature 332.3
May 31st (1988) No. 420-422 (Natsu
re voj,, 332, 31 Marchl 988
P420-422).
銅と酸素を含む酸化物の超電導体はこれまで、Ｌａ−Ｂ
ａ−Ｃｕ−０，Ｌａ−３ｒ−Ｃｕ−０゜Ｙ−Ｂ ａ−Ｃ
ｕ−０，希土類−Ｂａ−Ｃｕ−０゜Ｂ１−３ｒ−Ｃａ−
Ｃｕ−０等の系が発見され、研究されており、これらの
物質の薄膜化は前述の方法により可能である。しかし、
最近発見されたＴＱ−Ｂａ−Ｃａ−Ｃｕ−０という物質
系については、前述のように膜形成後、熱処理を行なう
とＴΩ成分が著しく減少してしまうという問題がある。Until now, superconductors of oxides containing copper and oxygen have been La-B
a-Cu-0, La-3r-Cu-0゜Y-B a-C
u-0, rare earth-Ba-Cu-0゜B1-3r-Ca-
Systems such as Cu-0 have been discovered and studied, and it is possible to form thin films of these materials by the methods described above. but,
Regarding the recently discovered material system TQ-Ba-Ca-Cu-0, there is a problem in that the TΩ component is significantly reduced when heat treatment is performed after film formation as described above.
このような問題を解決するための一つの方法としては、
例えばネイチャー３３２．３月３１日（１９８８年）第
４２０頁から第４２２頁（Ｎａｔｕｒｅｖｏｌ、 ３３
２．３１ Ｍａｒｃｈ １９８８ Ｐ４２０−４２２
）（公知例１）で述べられているように、熱処理による
成分減少をみこして、あらかじめＴ２成分を多めにした
膜を形成するという方法が考えられる。しかし、公知例
１は焼結体試料の作製について述べられたものであり、
薄膜作製の場合には、熱処理によるＴ０成分の減少が膜
の面内で必ずしも一定とは限らないから、上記の方法で
は熱処理の結果、膜面内で組成の均一な超電導薄膜を形
成することは不可能であり、それよりも、膜組成をなる
べく変化させないような熱処理を施すことが必要である
。One way to solve such problems is to
For example, Nature 332. March 31 (1988), pages 420 to 422 (Naturevol, 33
2.31 March 1988 P420-422
) (Known Example 1), a method can be considered in which a film is formed in advance in which the T2 component is increased to a large extent in anticipation of the component being reduced by heat treatment. However, Publication Example 1 describes the preparation of a sintered body sample,
In the case of thin film production, the decrease in T0 component due to heat treatment is not necessarily constant within the film plane, so the above method cannot form a superconducting thin film with a uniform composition within the film plane as a result of heat treatment. This is not possible, and it is necessary to perform heat treatment that does not change the film composition as much as possible.
本発明はこのような欠点を改善したものであり、支持体
上へ超電導薄膜を形成する方法において、熱処理に伴い
、薄膜を構成する金属成分が蒸発あるいは昇化すること
によって減少することを防ぐために、前記の超電導薄膜
の構成金属成分、特にＴ Ｑ、を含む化合物により、支
持体及び膜を密閉した後、その化合物ごと炉に入れて熱
処理することを特徴とするものである。この方法の一例
を腹式的に第１図に示す。第１図において、符号１は超
電導薄膜、２は支持体、３は超電導薄膜の構成金属成分
を含む化合物による囲い、４は電気炉を示す。この方法
によれば熱処理の際には、支持体２及び超電導薄膜１の
周囲の、例えばＴＱ化合物の囲い３によって十分なＴｆ
ｆあるいはＴＱ化合物の蒸気圧が供給されるために膜中
のＴＱ酸成分減少を防ぐことができる。このＴＲ化合物
で膜を囲む際に、完全に密閉しないで少し隙間をあける
か、ＴＱ化合物の多孔質体によって囲むことにより酸素
気流中で膜に酸素を供給しながらの熱処理をすることも
可能である。The present invention improves these drawbacks, and in order to prevent metal components constituting the thin film from decreasing due to evaporation or elevation during heat treatment in a method for forming a superconducting thin film on a support. The method is characterized in that after the support and the membrane are sealed with a compound containing the constituent metal components of the superconducting thin film, particularly TQ, the whole compound is placed in a furnace and heat-treated. An example of this method is schematically shown in FIG. In FIG. 1, reference numeral 1 indicates a superconducting thin film, 2 a support, 3 an enclosure made of a compound containing metal components constituting the superconducting thin film, and 4 an electric furnace. According to this method, during the heat treatment, sufficient Tf can be obtained by, for example, a TQ compound enclosure 3 around the support 2 and the superconducting thin film 1.
Since the vapor pressure of f or the TQ compound is supplied, a decrease in the TQ acid component in the film can be prevented. When surrounding the membrane with this TR compound, it is also possible to leave a small gap without completely sealing it, or by surrounding it with a porous body of TQ compound, heat treatment can be performed while supplying oxygen to the membrane in an oxygen stream. be.
これまでは、主としてＴＱ成分減少の防止という見地で
述べたが、本発明は、単にＴＱ酸成分場合に限らず、一
般に成分が減少しやすい薄膜を熱処理する方法として有
効である。膜を囲む化合物の組成を膜と類似なものとす
れば膜のすべての成分の減少を防ぐことが可能となる。So far, the present invention has been described mainly from the viewpoint of preventing the reduction of TQ components, but the present invention is effective not only in the case of TQ acid components, but also as a method for heat-treating thin films in which components tend to decrease in general. By making the composition of the compound surrounding the membrane similar to that of the membrane, it is possible to prevent the loss of all components of the membrane.
〔作用〕
前記のような熱処理方法を用いることにより、熱処理に
よる膜の成分減少が防止でき、面内で組成の均一な超電
導薄膜を形成することができる。[Function] By using the heat treatment method as described above, it is possible to prevent a decrease in the components of the film due to heat treatment, and it is possible to form a superconducting thin film with a uniform composition within the plane.
以下、本発明の実施例を比較例と対比して説明するが、
本発明はこれに限定されるものではない。Examples of the present invention will be explained below in comparison with comparative examples.
The present invention is not limited to this.
超電導薄膜の堆積方法としてはスパッタリング法、電子
ビーム蒸着法などがある。Examples of methods for depositing superconducting thin films include sputtering and electron beam evaporation.
比較例
１）高周波スパッタリング装置にタリウム、バリウム、
カルシウム、銅、酸素からなる焼結体ターゲットを装着
する。この焼結体ターゲットの組成は、ＴＱ：Ｂａ：Ｃ
ａ：Ｃｕ＝２：２：２：３となるように調整する。この
ような組成のターゲットを用い、下記の条件でスパッタ
リングを行なうと、堆積した膜の組成はＴＱ：Ｂａ：Ｃ
ａ：Ｃｕ＝４ ： １ ：１．３ ： ２．２となるこ
とが予備検討から確認されている。ターゲットの対向位
置に５ｍｎ＋Ｘ ２０ｍｍＸ ０ 、５ｍｍの大きさの
酸化マグネシウム（ＭｇＯ）単結晶（（１００）面）を
支持体として固定し、Ｉ Ｘ １０−ＢＴｏｒｒ程度に
まで排気した後、支持体の表面温度を２００ ’Ｃに保
ちつつ、酸素（０２）、アルゴン（Ａｒ）の混合ガスを
８Ｘ１０−３Ｔｏｒｒの圧力まで導入する。この時のガ
ス比は、０２／ （Ａｒ＋０ｚ）＝０．２５となるよう
にする。Comparative Example 1) Thallium, barium,
A sintered target consisting of calcium, copper, and oxygen is attached. The composition of this sintered target is TQ:Ba:C
Adjust so that a:Cu=2:2:2:3. When sputtering is performed using a target with such a composition under the following conditions, the composition of the deposited film is TQ:Ba:C.
It has been confirmed from preliminary studies that a:Cu=4:1:1.3:2.2. A magnesium oxide (MgO) single crystal ((100) plane) with a size of 5 mm + 20 mm While maintaining the temperature at 200'C, a mixed gas of oxygen (02) and argon (Ar) is introduced to a pressure of 8X10-3 Torr. The gas ratio at this time is set to 02/(Ar+0z)=0.25.
１３．５６ＭＨｚ、出力２００Ｗの高周波グロー放電に
より、ＴＱ−Ｂａ−Ｃａ−Ｃｕ−０薄膜を１μｍの厚み
まで堆積する。A TQ-Ba-Ca-Cu-0 thin film is deposited to a thickness of 1 μm by high-frequency glow discharge of 13.56 MHz and 200 W output.
２）１）で作製したＴＱ−Ｂａ−Ｃａ−Ｃｕ −０薄膜
を電気炉に入れ、１気圧の酸素気流中で８２０℃に保ち
、２時間の熱処理を行なう。2) The TQ-Ba-Ca-Cu-0 thin film prepared in 1) is placed in an electric furnace, maintained at 820°C in an oxygen stream of 1 atm, and heat-treated for 2 hours.
３）２）で熱処理したＴＲ−Ｂａ−Ｃａ−Ｃｕ −○薄
膜の第２図に示したような面内の数ケ所における組成を
ＥＰＭＡにより測定する。この結果を表１に示す。これ
より従来法による熱処理では明らかに面内での組成分布
が存在し、ＴＲが著しく減少している所もあることがわ
かる。3) The composition of the TR-Ba-Ca-Cu-○ thin film heat-treated in 2) at several points in the plane as shown in FIG. 2 is measured by EPMA. The results are shown in Table 1. From this, it can be seen that in the heat treatment by the conventional method, there is clearly an in-plane composition distribution, and there are places where the TR is significantly reduced.
表 １
実施例
１）高周波スパッタリング装置にタリウム、バリウム、
カルシウム、銅、酸素からなる焼結体ターゲットを装着
する。この焼結体ターゲットの組成は、ＴＱ：Ｂａ：Ｃ
ａ：Ｃｕ”１：４：３：４となるように調整する。この
ような組成のターゲットを用い、下記の条件でスパッタ
リングを行なうと、堆積した膜の組成はＴＱ：Ｂａ：Ｃ
ａ：Ｃｕ＝２：２：２：３となることが予備検討から確
認されている。ターゲットの対向位置に５ｖｎＸ２０ｍ
ｍＸ０．５ｍｍの大きさのＭｇＯ（１００）単結晶を支
持体として固定し、Ｉ Ｘ １０−６Ｔｏｒｒ程度にま
で排気した後、支持体の表面温度を２００℃に保ちつつ
、酸素、アルゴンの混合ガスを８Ｘ１０−”Ｔｏｒｒの
圧力まで導入する。この時のガス比はＯ２／（Ａｒ＋○
ｚ）＝０．２５となるようにする。Table 1 Example 1) Thallium, barium,
A sintered target consisting of calcium, copper, and oxygen is attached. The composition of this sintered target is TQ:Ba:C
a:Cu" 1:4:3:4. When sputtering is performed under the following conditions using a target with such a composition, the composition of the deposited film is TQ:Ba:C.
It has been confirmed from preliminary studies that a:Cu=2:2:2:3. 5vn x 20m opposite the target
After fixing an MgO (100) single crystal with a size of m x 0.5 mm as a support and evacuating to about I x 10-6 Torr, a mixed gas of oxygen and argon was applied while maintaining the surface temperature of the support at 200 °C. is introduced to a pressure of 8×10-” Torr.The gas ratio at this time is O2/(Ar+○
z)=0.25.
１３ 、５６ ＭＩ（ｚ、出力２００Ｗの高周波グロー
放電により、Ｔ Ｑ −Ｂ ａ −Ｃａ −Ｃｕ −０
薄膜を１μｍの厚みまで堆積する。13, 56 MI (z, by high-frequency glow discharge with an output of 200 W, T Q -B a -Ca -Cu -0
A thin film is deposited to a thickness of 1 μm.
２）１）で作製したＴＱ−Ｂａ−Ｃａ−Ｃｕ−〇薄膜を
板状のＴΩｚＢａ２ｃａｘｃｕｓ○、焼結体によって第
１図に示したように箱状に囲む。この際、完全に密閉し
てしまわずに、多少の隙間をあけておくようにする。次
に、この箱を電気炉に入れ酸素気流中で８２０°Ｃ，３
時間加熱することによりＴＱ−Ｂａ−Ｃａ−Ｃｕ−０薄
膜の熱処理を行なう。2) The TQ-Ba-Ca-Cu-○ thin film produced in 1) is surrounded by a plate-shaped TΩzBa2caxcus○, sintered body in a box shape as shown in FIG. At this time, do not completely seal it, but leave some space. Next, this box was placed in an electric furnace at 820°C for 3 hours in an oxygen stream.
The TQ-Ba-Ca-Cu-0 thin film is heat-treated by heating for a certain period of time.
３）実施例１−３）と同様にして、２）で熱処理したＴ
Ｑ−Ｂａ−Ｃａ−Ｃｕ−０薄膜の面内の組成分布をＥＰ
ＭＡにより測定する。この結果を表２に示す。3) T heat treated in 2) in the same manner as in Example 1-3)
EP the in-plane composition distribution of the Q-Ba-Ca-Cu-0 thin film.
Measured by MA. The results are shown in Table 2.
表 ２
表２から明らかなように、本発明による熱処理方法を用
いれば、薄膜の面内における組成分布が小さく、熱処理
前と比べて大きな組成ずれはおきないことがわかる。Table 2 As is clear from Table 2, when the heat treatment method according to the present invention is used, the in-plane composition distribution of the thin film is small, and no large composition deviation occurs compared to before heat treatment.
４）３）における、Ａ、Ｂ、Ｆの位置の各々四端子の電
極をつけ、各々の位置における比抵抗の温度依存性を測
定する。この結果を第３図に示す。4) Attach four-terminal electrodes to each of the positions A, B, and F in 3), and measure the temperature dependence of specific resistance at each position. The results are shown in FIG.
膜面内での組成のずれが小さいことを反映して比抵抗の
温度依存性は膜面内で大きく変わらないことがわかる。It can be seen that the temperature dependence of resistivity does not change significantly within the film plane, reflecting the small deviation in composition within the film plane.
以上の説明から明らかなように、本発明による熱処理方
法を用いれば従来法に比べて熱処理による組成のずれ、
特にＴＱ酸成分減少が小さく、かつ膜面内での組成の分
布も小さい良好な超電導薄膜を形成すことができる。As is clear from the above explanation, if the heat treatment method according to the present invention is used, there will be less deviation in composition due to heat treatment than in the conventional method.
In particular, it is possible to form a good superconducting thin film in which the decrease in TQ acid components is small and the composition distribution within the film plane is small.
第１図は本発明による超電導薄膜の熱処理方法の一例を
電気炉の断面図として模式的に示した概略図である。
第２図は比較例及び実施例で作製した膜の組成分布を調
べる際に、その測定点を示した膜平面図である。
第３図は本発明の実施例で作製した膜のＡ、Ｂ。
Ｆの測定点における比抵抗の温度変化を示す特性図であ
る。
１・・・超電導薄膜、２・・・支持体、３・・・超電導
薄膜の構成金属成分を含む化合物による囲い、４・・・
電気高３０
ＴｅＴｎｐｅｒａｔｕｉｅ （に）FIG. 1 is a schematic cross-sectional view of an electric furnace showing an example of the heat treatment method for a superconducting thin film according to the present invention. FIG. 2 is a plan view of the membranes showing measurement points when examining the composition distribution of the membranes produced in Comparative Examples and Examples. FIG. 3 shows A and B of films produced in Examples of the present invention. It is a characteristic diagram which shows the temperature change of specific resistance at the measurement point of F. DESCRIPTION OF SYMBOLS 1... Superconducting thin film, 2... Support, 3... Enclosure made of a compound containing a constituent metal component of the superconducting thin film, 4...
Electric High School 30 TeTnperatuie (in)
Claims (1)
処理に伴い、薄膜の構成金属成分が蒸発あるいは昇化す
ることによって減少することを防ぐために、前記超電導
薄膜の構成金属成分を含む化合物により、支持体及び膜
を囲んだ後、その化合物ごと熱処理することを特徴とす
る超電導薄膜形成方法。 ２、支持体上へ超電導薄膜を形成する方法において、熱
処理に伴い、薄膜の構成金属成分が蒸発あるいは昇化す
ることによって減少することを防ぐために、前記超電導
薄膜の構成金属成分を含む化合物からなる多孔質体によ
り、支持体及び膜を囲んだ後、その多孔質体ごと熱処理
することを特徴とする超電導薄膜形成方法。 ３、前記超電導薄膜が構成元素としてタリウム（Ｔｌ）
を含むことを特徴とする請求項１又は２に記載の超電導
薄膜形成方法。 ４、前記超電導薄膜がタリウム、バリウム（Ｂａ）、カ
ルシウム（Ｃａ）、銅及び酸素により構成されることを
特徴とする請求項１又は２に記載の超電導薄膜形成方法
。[Scope of Claims] 1. In the method of forming a superconducting thin film on a support, in order to prevent the constituent metal components of the thin film from decreasing due to evaporation or elevation due to heat treatment, the constituent metal components of the superconducting thin film are A method for forming a superconducting thin film, which comprises surrounding a support and a membrane with a compound containing the components, and then heat-treating the compound together. 2. In the method of forming a superconducting thin film on a support, in order to prevent the constituent metal components of the thin film from decreasing due to evaporation or elevation due to heat treatment, a compound containing the constituent metal components of the superconducting thin film is used. A method for forming a superconducting thin film, which comprises surrounding a support and a membrane with a porous material, and then heat-treating the porous material together. 3. The superconducting thin film contains thallium (Tl) as a constituent element.
The method for forming a superconducting thin film according to claim 1 or 2, comprising: 4. The method for forming a superconducting thin film according to claim 1 or 2, wherein the superconducting thin film is composed of thallium, barium (Ba), calcium (Ca), copper, and oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63188457A JPH0238302A (en) | 1988-07-29 | 1988-07-29 | Formation of superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63188457A JPH0238302A (en) | 1988-07-29 | 1988-07-29 | Formation of superconducting thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0238302A true JPH0238302A (en) | 1990-02-07 |
Family
ID=16224041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63188457A Pending JPH0238302A (en) | 1988-07-29 | 1988-07-29 | Formation of superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0238302A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02217316A (en) * | 1988-12-22 | 1990-08-30 | General Electric Co <Ge> | High-temperature superconductive material and its manufacture |
| US5139998A (en) * | 1988-08-31 | 1992-08-18 | Superconductor Technologies, Inc. | Controlled thallous oxide evaporation for thallium superconductor films and reactor design |
| JPH04310521A (en) * | 1991-01-29 | 1992-11-02 | Internatl Business Mach Corp <Ibm> | Method of forming thin oxide film |
| WO1993008319A1 (en) * | 1991-10-25 | 1993-04-29 | Superconductor Technologies, Inc. | Reactor vessel for manufacture of superconducting films |
-
1988
- 1988-07-29 JP JP63188457A patent/JPH0238302A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5139998A (en) * | 1988-08-31 | 1992-08-18 | Superconductor Technologies, Inc. | Controlled thallous oxide evaporation for thallium superconductor films and reactor design |
| US5306699A (en) * | 1988-08-31 | 1994-04-26 | Superconductor Technologies, Inc. | Reactor vessel for manufacture of superconducting films |
| JPH02217316A (en) * | 1988-12-22 | 1990-08-30 | General Electric Co <Ge> | High-temperature superconductive material and its manufacture |
| JPH04310521A (en) * | 1991-01-29 | 1992-11-02 | Internatl Business Mach Corp <Ibm> | Method of forming thin oxide film |
| WO1993008319A1 (en) * | 1991-10-25 | 1993-04-29 | Superconductor Technologies, Inc. | Reactor vessel for manufacture of superconducting films |
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