JPH0360139A - Inner lead bonder - Google Patents
Inner lead bonderInfo
- Publication number
- JPH0360139A JPH0360139A JP19740089A JP19740089A JPH0360139A JP H0360139 A JPH0360139 A JP H0360139A JP 19740089 A JP19740089 A JP 19740089A JP 19740089 A JP19740089 A JP 19740089A JP H0360139 A JPH0360139 A JP H0360139A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- inner lead
- pressing jig
- semiconductor pellet
- built
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000008188 pellet Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011889 copper foil Substances 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims 1
- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000002788 crimping Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はＴ Ａ Ｂ （Ｔａｐｅ Ａｕｔｏｍａｔｅｄ
Ｂｏｎｄｉｎｇ）用テープに形成されたインナーリー
ドと半導体ペレットのバンプ電極とを接合一体とするた
めのインナーリードボンダーに間する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is based on T A B (Tape Automated
An inner lead bonder is used to bond the inner leads formed on the tape for bonding and the bump electrodes of the semiconductor pellet together.
［従来技術］
第４図に示すように、所定間隔て透孔２ａを穿孔した長
尺フィルム２上に銅箔３を積層し、該銅箔３をエツチン
グして透孔２ａ内に延びる複数本のインナーリード４を
形成したＴＡＢ用テープｌと、該ＴＡＢ用テープｌの各
インナーリード４と半導体ペレット５の上記各インナー
リード４と対応するバンプ電極５ａとを接合一体とする
場合には、ボンディングツール６が用いられている。こ
のボンディングツール６は、その下端面が半導体ペレッ
ト５の外形と略同−形状で耐蝕性の優れた平坦押圧面６
ａとなり、パルス電流によって上記平坦押圧面６ａの温
度を瞬時に所定の高温にまで昇温したり、常温にまで降
温可能なヒータチップとなっている。[Prior Art] As shown in FIG. 4, a copper foil 3 is laminated on a long film 2 in which through holes 2a are perforated at predetermined intervals, and the copper foil 3 is etched to form a plurality of films extending into the through holes 2a. When the TAB tape 1 having the inner leads 4 formed thereon and the respective inner leads 4 of the TAB tape 1 and the bump electrodes 5a corresponding to the inner leads 4 of the semiconductor pellet 5 are bonded together, bonding is performed. Tool 6 is used. This bonding tool 6 has a flat pressing surface 6 whose lower end surface has approximately the same shape as the external shape of the semiconductor pellet 5 and has excellent corrosion resistance.
a, and the heater chip is capable of instantaneously raising the temperature of the flat pressing surface 6a to a predetermined high temperature or lowering the temperature to room temperature using a pulse current.
このボンディングツール６を用いたボンディングは次の
ように行われる。即ち、支持台７上に支持された半導体
ペレット５の各バンプ電極５ａとＴＡＢ用テープ１の各
インナーリード４とを対応させて重ね合わせ、第５１！
Ｉに示すように、ボンディングツール６を下降させて下
端の平坦押圧面６ａでインナーリード４をバンプｔｌｉ
５ａに押圧すると共に、瞬時に所定の高温にまで昇温し
で対応するインナーリード４とバンプ電ｉ５ａを加圧加
熱して両者を熱圧着している。Bonding using this bonding tool 6 is performed as follows. That is, each bump electrode 5a of the semiconductor pellet 5 supported on the support stand 7 and each inner lead 4 of the TAB tape 1 are overlapped in correspondence with each other, and the 51st!
As shown in I, the bonding tool 6 is lowered to bump the inner lead 4 with the flat pressing surface 6a at the lower end.
5a, the temperature is instantly raised to a predetermined high temperature, and the corresponding inner leads 4 and bump electrodes i5a are heated under pressure to bond them together by thermocompression.
［発明が解決しようとする課題］
しかしながら上記ボンディングツール６下端の平坦押圧
面６ａはｌＶＩ＋Ｉ蝕性が良好な材料で製作されている
が、瞬時に所定の高温にまで昇温させたり、瞬時に常温
にまで降温させて使用しているため、長時間の使用に対
してはどうしてもこの平坦押圧面６ａが摩耗し易く定期
的に交換する必要があった。このときの交換作業では、
新しいボンディングツール６下端の平坦押圧面６ａが傾
いていると各バンプ電極５ａとインナーリード４とが均
一に接合できないのて平坦押圧面６ａの面出しを正確に
行う必要があり、面倒で時間のかかる作業になるといっ
た問題があった。[Problems to be Solved by the Invention] However, although the flat pressing surface 6a at the lower end of the bonding tool 6 is made of a material with good lVI+I corrosion resistance, it cannot be heated instantly to a predetermined high temperature or instantly heated to room temperature. Since the temperature is lowered during use, the flat pressing surface 6a tends to wear out during long-term use, and needs to be replaced periodically. In this exchange work,
If the flat pressing surface 6a at the lower end of the new bonding tool 6 is tilted, each bump electrode 5a and the inner lead 4 cannot be bonded uniformly, so it is necessary to accurately level the flat pressing surface 6a, which is troublesome and time-consuming. There was a problem that it required such work.
また、半導体ベレット５のサイズが変更されると、この
ベレットサイズの外形とほぼ等しい外形の下端平坦押圧
面を有する他のボンディングツールと交換していた。こ
の場合も上記同様に交換したボンディングツールの下端
平坦押圧面の面出しを行う必要があり面倒で時間がかか
る作業になるといった同種の問題があった。Furthermore, when the size of the semiconductor pellet 5 is changed, it is replaced with another bonding tool having a flat pressing surface at the lower end and having an outer shape approximately equal to that of the pellet size. In this case as well, there was the same problem as above, in that it was necessary to level out the flat pressing surface of the lower end of the replaced bonding tool, resulting in a troublesome and time-consuming task.
［課題を解決するための手段］
上記課題を解決するために本発明のインナーリートボン
ダーは、透孔を形成したフィルムに銅箔を積層し、該銅
箔をエツチングして透孔内に延びるインナーリードを形
成したＴＡＢ用テープの上記インナーリードと半導体ベ
レットのバンプ電極を熱圧着するインナーリードボンダ
ーであって、上記半導体ベレットの裏面側を支持して上
下動自在の押圧治具と、上面に耐蝕性を有する保護材を
ｆｌｌした上記ＴＡＢ用テープを支持するヒータ内蔵支
持台とよりなることを特徴とする。[Means for Solving the Problems] In order to solve the above problems, the inner lead bonder of the present invention laminates a copper foil on a film in which a through hole is formed, and etches the copper foil to form an inner layer that extends into the through hole. An inner lead bonder that thermocompresses the inner lead of the TAB tape on which the lead is formed and the bump electrode of the semiconductor pellet, and includes a pressing jig that supports the back side of the semiconductor pellet and is movable up and down, and a corrosion-resistant upper surface. The present invention is characterized by comprising a support stand with a built-in heater for supporting the above-mentioned TAB tape coated with a protective material having a protective material.
［作用］
上記構成では、ヒータ内蔵支持台を絶えず高温状態でＴ
ＡＢ用テープを支持することができ、バンプ電極を形成
した半導体ベレットの裏面側を支持した押圧治具を下降
させて各バ′ンブ電極と対応するインナーリードとを重
ね合わせて加圧することで両者が加圧加熱されて熱圧着
できる。このとき、ヒータ内蔵支持台の上面は耐蝕性を
有する保護材が積層されており、絶えず高温状態とする
ことで保！！ ｔ、ｔの摩耗がなくなる。[Function] In the above configuration, the support base with a built-in heater is constantly kept at a high temperature.
A pressing jig that can support the AB tape and supports the back side of the semiconductor pellet on which bump electrodes are formed is lowered to overlap each bump electrode and the corresponding inner lead and press them together. can be heated under pressure and bonded under heat. At this time, the top surface of the support base with a built-in heater is laminated with a corrosion-resistant protective material, and is kept in a constant high temperature state. ! No wear on t and t.
［実施例］ 以下、図面を参照して本発明の一実施例を説明する。[Example] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例に係るインナーリードボンダ
ーの斜ｙ！図であり、ＴＡＥＧ用テープを一部破断して
示し、第２図は同実施例の要部縦断面図を示している。FIG. 1 shows the oblique y! of an inner lead bonder according to an embodiment of the present invention. 2 is a partially cutaway view of the TAEG tape, and FIG. 2 is a vertical sectional view of the main part of the same embodiment.
本発明のインナーリードボンダーによって熱圧着される
ＴＡＢ用テープｌと半導体ベレット５はそれぞれの位置
関係が逆転していることを除いて実質的に同一であるた
め、同一部材に同一符号を付して、ここでは説明を省略
し、本発明の特徴となる押圧治具１ｏとヒータ内蔵支持
台２０について説明する。The TAB tape l and the semiconductor pellet 5 that are thermocompression bonded by the inner lead bonder of the present invention are substantially the same except that their respective positions are reversed, so the same members are given the same reference numerals. , the description will be omitted here, and the pressing jig 1o and the support base 20 with a built-in heater will be described, which are the characteristics of the present invention.
上記押圧治具１０は、上記ヒータ内蔵支持台２０に半導
体ベレット５を押圧する押圧手段と、半導体ベレット５
の裏面側を吸着支持するための真空吸着手段とを兼ね備
えたものである。押圧手段としては、下端面が平坦面に
成形され表面にテフロシ加工が施されたパンチ部１１と
該パンチ部１１の途中に取着された断熱及び緩衝用ゴム
部材１２とよりなっている。上記パンチ部１１の内部に
は下端面１１ａのほぼ中央部分から一側面１３にわたっ
て略り字状の貫通孔１４が穿孔されており、上記側面１
３の間口部１５に外部の真空ポンプ（図示せず）等に接
続されたチューブ１６の一端が接続されている。そのた
め、真空ポンプを駆動させると貫通孔１４内が真空吸引
され、パンチ部１１の下端面１２に半導体ベレット５の
裏面側を真空吸着できるようになっている。The pressing jig 10 includes a pressing means for pressing the semiconductor pellet 5 against the heater built-in support base 20, and
It is also equipped with a vacuum suction means for suctioning and supporting the back side of the holder. The pressing means consists of a punch section 11 whose lower end surface is formed into a flat surface and whose surface is treated with Teflon, and a heat insulating and cushioning rubber member 12 attached to the middle of the punch section 11. An abbreviated through hole 14 is bored inside the punch portion 11 from approximately the center of the lower end surface 11a to one side surface 13.
One end of a tube 16 connected to an external vacuum pump (not shown) or the like is connected to the frontage 15 of No. 3. Therefore, when the vacuum pump is driven, the inside of the through hole 14 is vacuum-suctioned, and the back side of the semiconductor pellet 5 can be vacuum-adsorbed to the lower end surface 12 of the punch portion 11.
一方、ヒータ内蔵支持台２ｏは第２図に示すように、表
裏面側を従来と逆方向にして送給されるＴ Ａ Ｂ用テ
ープ１を支持し、フィルム２に穿孔された透孔２ａ内に
延びる各インナーリード４を加熱するものである。この
支持台２ｏには、表面が平滑で酸化せず、溶接等によっ
て接着し難い合成ダイヤモンド製の保護材２１が積層さ
れており、その内側はぼ中央部分にヒータ２２が内蔵さ
れ、上記上面保護材２１０表面を接合温度となる約５５
０℃の高温に保持できるようになっている。さらに、支
持台２０の周縁には断熱材２３が埋設されており、支持
されるＴＡＢ用テープｌのポリイミド系樹脂フィルム２
が位置する部分の温度がその耐熱温度の約３５０℃以下
となるように構成されてフィルム２の軟化溶融防止が図
られている。On the other hand, as shown in FIG. 2, the support stand 2o with a built-in heater supports the T A B tape 1 that is fed with the front and back sides facing in the opposite direction to the conventional one, and the support stand 2o has a built-in heater that supports the T A B tape 1 that is fed in the opposite direction from the conventional one. This heats each inner lead 4 extending to the inner lead 4. A protective material 21 made of synthetic diamond, which has a smooth surface, does not oxidize, and is difficult to adhere by welding or the like, is laminated on the support base 2o, and a heater 22 is built in the center of the inside of the protective material 21 to protect the top surface. The surface of the material 210 reaches the bonding temperature of approximately 55
It can be maintained at a high temperature of 0°C. Furthermore, a heat insulating material 23 is embedded in the periphery of the support base 20, and the polyimide resin film 2 of the TAB tape l to be supported
The film 2 is constructed so that the temperature of the portion where the film 2 is located is below its heat-resistant temperature of approximately 350° C., thereby preventing the film 2 from softening and melting.
上記構成のインナーリードボンダーによるＴＡＢ用テー
プｌの各インナーリード４と対応する半導体ペレット５
のバンプ電極５ａとの接合は次のように行われる。Semiconductor pellets 5 corresponding to each inner lead 4 of the TAB tape l produced by the inner lead bonder having the above structure
The bonding with the bump electrode 5a is performed as follows.
まず、ヒータ内蔵支持台２０側では、上面保護材２１の
表面温度が絶えず約５５０℃の接合温度となるようにヒ
ータ２２を動作させ、押圧治具１０側では真空ポンプを
駆動させてパンチ部１１下端面に半導体ペレット５．の
裏面側を真空吸着し、該半導体ペレット５の表面側のバ
ンプ電極５ａを対応するインナーリード４上に位置させ
る。First, on the side of the support base 20 with a built-in heater, the heater 22 is operated so that the surface temperature of the upper surface protection material 21 constantly reaches the bonding temperature of about 550°C, and on the side of the pressing jig 10, the vacuum pump is driven to 5. Semiconductor pellet on the lower end surface. The back side of the semiconductor pellet 5 is vacuum-adsorbed, and the bump electrode 5a on the front side of the semiconductor pellet 5 is positioned on the corresponding inner lead 4.
そして、第３図に示すように、ＴＡＢ用チー１１のイン
ナーリード４が延びる透孔２ａをヒータ内蔵支持台２０
のヒータ２２上に支持させて各インナーリード４を昇温
させると共に、押圧治具１０を下降させて半導体ペレッ
ト５のバンプ電極５ａを対応するインナーリード４に重
ね合わせて押圧する。このとき押圧治具１０のゴム部材
１２に断熱作用があるため熱が上方に伝わり難くなり、
押圧治具１０上部の温度が高くなって図示していない押
圧機構が高温となって破壊される心配もなく、ゴム部材
１２０弾性による緩衝によって徐徐に加圧されてバンプ
電Ｆｉ５ａとインナーリード４とがそれぞれ熱圧着され
る。また、支持台２００周縁には耐熱材２３が埋設され
ているため、透孔２ａを除くフィルム２が昇温しで溶融
する心配もない。As shown in FIG.
Each inner lead 4 is supported on a heater 22 to raise its temperature, and the pressing jig 10 is lowered to overlap and press the bump electrode 5a of the semiconductor pellet 5 onto the corresponding inner lead 4. At this time, since the rubber member 12 of the pressing jig 10 has a heat insulating effect, it becomes difficult for heat to be transmitted upward.
There is no fear that the temperature of the upper part of the pressing jig 10 will become high and the pressing mechanism (not shown) will become high temperature and be destroyed, and the bump electric field Fi5a and the inner lead 4 are gradually pressurized by the elasticity of the rubber member 120. are heat-compressed. Moreover, since the heat-resistant material 23 is embedded in the periphery of the support base 200, there is no fear that the film 2 except for the through holes 2a will melt due to temperature rise.
熱圧着が終了すると真空ポンプの駆動を停止して半導体
ペレット５の真空吸着を解除してから押圧治具１０を上
昇させ、上記したように次の半導体ペレット５の裏面側
を真空吸着すると共に、半導体ペレット５が接続された
ＴＡＢ用テープを送り出し、次の透孔２ａをヒータ内蔵
支持台２０上に位置させる。このとき、ヒータ２２は降
温させることなく上記した高温に保持しておく。When the thermocompression bonding is completed, the drive of the vacuum pump is stopped to release the vacuum suction of the semiconductor pellet 5, and then the pressing jig 10 is raised to vacuum suction the back side of the next semiconductor pellet 5 as described above. The TAB tape to which the semiconductor pellet 5 is connected is sent out, and the next through hole 2a is positioned on the support base 20 with a built-in heater. At this time, the heater 22 is maintained at the above-described high temperature without being lowered.
以後、上記動作を繰り返して半導体ペレット５のバンプ
電極５ａと対応するＴＡＢ用チー１１のインナーリード
４とが順次熱圧着される。Thereafter, by repeating the above operations, the bump electrodes 5a of the semiconductor pellet 5 and the inner leads 4 of the corresponding TAB chips 11 are successively bonded by thermocompression.
本発明のインナーリードボンダーでは、ヒータ内蔵支持
台２０の上面に、酸化せず、接着性がなく、耐蝕性の良
好な合成ダイヤモンドｌ１ｌＯｉ！謹材２１が積層され
、かつ、ヒータ２２によって上記保護材２１表面が高温
のまま保持されるので、従来のボンディングツールのよ
うに瞬時に高温に昇温したり常温に降温することがない
ため熱圧着を繰り返しても摩耗する心配がなく、絶えず
平滑な表面を維持することができる。従って、このヒー
タ内蔵支持台２０を交換する必要がなくなり、接合面と
なる支持台２０表面の面出し作業から開放される。さら
に、半導体ペレット５のサイズが変更されでも上記押圧
治具１０のパンチ部１１下面に真空吸着できれば押圧治
具１０を取り替える必要もなくなり、また、半導体ペレ
ット５のサイズに対応する押圧治具１０と交換しても支
持台２０を交換する必要がなく、従って該押圧治具１ｏ
の交換による面出しを正確に行なう必要もなくなり、メ
ンテナンス等に対する作業能率が従来のボンディングツ
ールと比べ遥かに向上する。In the inner lead bonder of the present invention, synthetic diamond l1lOi!, which does not oxidize, has no adhesive properties, and has good corrosion resistance, is placed on the upper surface of the support base 20 with a built-in heater. Since the protective material 21 is laminated and the surface of the protective material 21 is kept at a high temperature by the heater 22, the temperature does not instantly rise to a high temperature or cool down to room temperature as in conventional bonding tools. There is no need to worry about wear even after repeated crimping, and a smooth surface can be maintained at all times. Therefore, there is no need to replace the support base 20 with a built-in heater, and the work of leveling the surface of the support base 20, which will be the joint surface, is freed. Furthermore, even if the size of the semiconductor pellet 5 is changed, if it can be vacuum-adsorbed to the lower surface of the punch portion 11 of the pressing jig 10, there is no need to replace the pressing jig 10, and the pressing jig 10 corresponding to the size of the semiconductor pellet 5 can be Even if it is replaced, there is no need to replace the support stand 20, and therefore the pressing jig 1o
There is no need to accurately perform surface leveling due to replacement, and work efficiency for maintenance etc. is much improved compared to conventional bonding tools.
［発明の効果］
以上の説明から明かなように、本発明のインナーリード
ボンダーでは、ヒータ内蔵支持台の上面に積層された耐
蝕性の良好な保護材が絶えず一定した高温に保持するこ
とで摩耗が生じなくなる。[Effects of the Invention] As is clear from the above description, in the inner lead bonder of the present invention, the corrosion-resistant protective material laminated on the top surface of the support base with a built-in heater is constantly maintained at a constant high temperature, thereby preventing wear. will no longer occur.
従って接合面の摩耗による面出しといったメンテナンス
時間が不要となり大幅な作業時間の短縮となり、また、
半導体ペレットのサイズが変更してもヒータ内蔵支持台
を共用してボンディング作業が行えるといった極めて顕
著な効果を奏する。Therefore, there is no need for maintenance time such as surface leveling due to wear of the joint surfaces, resulting in a significant reduction in work time.
Even if the size of the semiconductor pellet changes, the bonding work can be carried out by sharing the support stand with a built-in heater, which is a very remarkable effect.
４、 ［！１面の簡単な説明
第１図は本発明の一実施例に係るインナーリ一ドボンダ
ーの斜視図であり、ＴＡＢ用テープを一部破断て示し、
第２因は同実施例の要部縦断面、第３図は本発明のイン
ナーリートボンダーによる圧着状態を示す要部縦断面図
、第４図は従来のインナーリードのボンディング状態を
示すＴＡＢ用テープを一部破断て示した斜視図、第５図
はその側面図である。4, [! Brief Description of Page 1 FIG. 1 is a perspective view of an inner lead bonder according to an embodiment of the present invention, with the TAB tape partially cut away.
The second factor is a longitudinal cross-section of the main part of the same example, FIG. 3 is a longitudinal cross-section of the main part showing the state of crimping by the inner lead bonder of the present invention, and FIG. 4 is a TAB tape showing the bonding state of the conventional inner lead. FIG. 5 is a partially cutaway perspective view of the same, and FIG. 5 is a side view thereof.
１・・・Ｔ Ａ Ｂ用テープ、 ２・・・フィルム、 ２ａ・・・透孔、 ３・・・銅箔、 ４・・・インナーリート、 ５・・・半導体ベレット、 ５ａ・・・バンプ電極、 １０・・・押圧治具。1...T A B tape, 2...Film, 2a... through hole, 3...Copper foil, 4... Inner lead, 5... semiconductor pellet, 5a...bump electrode, 10... Pressing jig.
２０・・・ヒータ内蔵支持台、 ２１ ・・・ 保護 （才。20... Support stand with built-in heater, 21... Protection (Sai.
特 許 出 願 人 間西日本電気株式会社Patent applicant Manishi Nippon Electric Co., Ltd.
Claims (1)
をエッチングして透孔内に延びるインナーリードを形成
したＴＡＢ用テープの上記インナーリードと半導体ペレ
ットのバンプ電極を熱圧着するインナーリードボンダー
であって、 上記半導体ペレットの裏面側を支持して上下動自在の押
圧治具と、上面に耐蝕性を有する保護材を積層して上記
ＴＡＢ用テープを支持するヒータ内蔵支持台とよりなる
ことを特徴とするインナーリードボンダー。(1) Copper foil is laminated on a film in which through-holes are formed, and the copper foil is etched to form inner leads extending into the through-holes.The inner leads of the TAB tape and the bump electrodes of the semiconductor pellet are bonded by thermocompression. The inner lead bonder includes a pressing jig that supports the back side of the semiconductor pellet and is movable up and down, and a support base with a built-in heater that supports the TAB tape by laminating a corrosion-resistant protective material on the upper surface. An inner lead bonder that is characterized by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1197400A JP2749137B2 (en) | 1989-07-28 | 1989-07-28 | Inner lead bonder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1197400A JP2749137B2 (en) | 1989-07-28 | 1989-07-28 | Inner lead bonder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0360139A true JPH0360139A (en) | 1991-03-15 |
| JP2749137B2 JP2749137B2 (en) | 1998-05-13 |
Family
ID=16373886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1197400A Expired - Fee Related JP2749137B2 (en) | 1989-07-28 | 1989-07-28 | Inner lead bonder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2749137B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0525725U (en) * | 1991-03-28 | 1993-04-02 | 関西日本電気株式会社 | Inner lead bonder |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6297341A (en) * | 1985-10-23 | 1987-05-06 | Matsushita Electric Ind Co Ltd | Bonding device |
| JPS6421076A (en) * | 1987-07-15 | 1989-01-24 | Sumitomo Electric Industries | Hard, heat resistant sintered body and production thereof |
-
1989
- 1989-07-28 JP JP1197400A patent/JP2749137B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6297341A (en) * | 1985-10-23 | 1987-05-06 | Matsushita Electric Ind Co Ltd | Bonding device |
| JPS6421076A (en) * | 1987-07-15 | 1989-01-24 | Sumitomo Electric Industries | Hard, heat resistant sintered body and production thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0525725U (en) * | 1991-03-28 | 1993-04-02 | 関西日本電気株式会社 | Inner lead bonder |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2749137B2 (en) | 1998-05-13 |
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