JPH0358194B2 - - Google Patents
Info
- Publication number
- JPH0358194B2 JPH0358194B2 JP58073523A JP7352383A JPH0358194B2 JP H0358194 B2 JPH0358194 B2 JP H0358194B2 JP 58073523 A JP58073523 A JP 58073523A JP 7352383 A JP7352383 A JP 7352383A JP H0358194 B2 JPH0358194 B2 JP H0358194B2
- Authority
- JP
- Japan
- Prior art keywords
- thermal resistance
- low thermal
- circuit board
- magnesia
- resistance circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 30
- 239000000395 magnesium oxide Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229920000877 Melamine resin Polymers 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 claims 1
- 239000004593 Epoxy Substances 0.000 claims 1
- 239000004640 Melamine resin Substances 0.000 claims 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052810 boron oxide Inorganic materials 0.000 claims 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 18
- 239000000945 filler Substances 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910019440 Mg(OH) Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000760 Hardened steel Inorganic materials 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 235000012255 calcium oxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 241001131796 Botaurus stellaris Species 0.000 description 1
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明は低熱抵抗回路基板、特に厚膜混成集積
回路に用いられる低熱抵抗回路基板に関する。DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to a low thermal resistance circuit board, particularly to a low thermal resistance circuit board used in a thick film hybrid integrated circuit.
(ロ) 従来技術
本願出願人はすでに特公昭46−13234号公報に
厚膜混成集積回路の組み込みに適した金属基板を
用いた低熱抵抗回路基板を開発した。斯る基板は
アルミニウム板の表面を陽極酸化として酸化アル
ミニウム被膜で被覆したものであり、その表面に
約30μの厚さのエポキシ樹脂で銅箔を接着してい
る構造なので熱抵抗は１cm2の面積あたり1.3℃／
Ｗ程度であつた。(B) Prior Art The applicant of the present application has already developed a low thermal resistance circuit board using a metal substrate suitable for incorporating a thick film hybrid integrated circuit in Japanese Patent Publication No. 13234/1983. Such a board is made by anodizing the surface of an aluminum plate and coating it with an aluminum oxide film, and has a structure in which a copper foil is bonded to the surface with an epoxy resin approximately 30μ thick, so the thermal resistance is 1cm 2 area. 1.3℃/
It was about W.
最近集積化の要請より、更に大出力回路をも組
み込みできる低熱抵抗基板が提案された。この基
板は第１図に示す如く、アルミニウム等の良熱伝
導性金属板１の一主面に多量のアルミナ
（Al2O3）を含有したエポキシ樹脂層２を薄く付
着した構造を有し、樹脂層の厚さが60μと２倍に
なつたにもかかわらず、熱抵抗は0.8℃／Ｗと改
善されている。 Recently, due to the demand for integration, low thermal resistance substrates that can incorporate even higher output circuits have been proposed. As shown in FIG. 1, this substrate has a structure in which an epoxy resin layer 2 containing a large amount of alumina (Al 2 O 3 ) is thinly adhered to one main surface of a metal plate 1 made of aluminum or the like with good thermal conductivity. Even though the thickness of the resin layer has doubled to 60μ, the thermal resistance has been improved to 0.8°C/W.
しかしながら斯上の基板を用いて混成集積回路
を生産すると大きな問題が生じた。これは一枚の
基板に多数個の混成集積回範を形成した後にプレ
スで各混成集積回路に打抜く工程で、プレス金型
の寿命が従来の基板が100万シヨツトであるのに
対しこの基板では5000シヨツトで摩耗してしまう
のである。この原因はアルミナにある。即ちアル
ミナのモース硬度は９であり、プレス金型を形成
する焼入れ鋼のモース硬度は約6.5でありプレス
金型の側面を削る。 However, major problems arose when producing hybrid integrated circuits using such substrates. This is a process in which a large number of hybrid integrated circuits are formed on a single board, and then each hybrid integrated circuit is punched out using a press. Then, it will wear out after 5000 shots. The cause of this is alumina. That is, the Mohs hardness of alumina is 9, and the Mohs hardness of the hardened steel forming the press die is approximately 6.5, and the side surface of the press die is ground.
(ハ) 発明の目的
本発明は斯る欠点に鑑みてなされ、従来の欠点
を大巾に改善した低熱抵抗回路基板を提供するこ
とを目的とする。(c) Object of the Invention The present invention was made in view of the above drawbacks, and an object of the present invention is to provide a low thermal resistance circuit board that greatly improves the conventional drawbacks.
(ニ) 発明の構成
本発明による低熱抵抗回路基板は第２図に示す
如く、良熱伝導性金属基板１１とその一主面に付
着したマグネシアを含有した絶縁樹脂薄層１２よ
り構成されている。(d) Structure of the Invention As shown in FIG. 2, the low thermal resistance circuit board according to the present invention is composed of a highly thermally conductive metal substrate 11 and a thin insulating resin layer 12 containing magnesia attached to one main surface of the metal substrate 11. .
(ホ) 実施例
本発明による低熱抵抗回路基板は、良熱伝導性
金属基板１１とその一主面に設けたマグネシア
（MgO）を含有した絶縁樹脂層１２より構成され
ている。(E) Embodiment A low thermal resistance circuit board according to the present invention is composed of a metal substrate 11 with good thermal conductivity and an insulating resin layer 12 containing magnesia (MgO) provided on one main surface of the metal substrate 11.
金属基板１１としてはプレス等の加工容易で、
良熱伝導性のアルミニウムを用いる。 The metal substrate 11 can be easily processed by pressing, etc.
Uses aluminum with good thermal conductivity.
絶縁樹脂層１２はエポキシ樹脂、フエノール樹
脂、プチラール樹脂、メラミン樹脂等から１成分
あるいは複数成分の混合したものを用い、その樹
脂に30〜85重量％のマグネシア（MgO）を混入
する。上記30％は熱伝導率から決められ、上記85
％は基板への接着力から夫々決められる。更にこ
の絶縁樹脂層１２中にはシリカ、BNを含有させ
ても良い。シリカは粘度コントロールとして30％
重量％以下混入し、BNは更に熱伝導率を向上さ
せるために30重量％以下混入しても良い。 The insulating resin layer 12 is made of one component or a mixture of a plurality of epoxy resins, phenolic resins, petitral resins, melamine resins, etc., and 30 to 85% by weight of magnesia (MgO) is mixed into the resin. The above 30% is determined from the thermal conductivity, and the above 85
The percentage is determined based on the adhesive strength to the substrate. Furthermore, this insulating resin layer 12 may contain silica or BN. Silica is 30% as viscosity control
BN may be mixed in an amount of 30% by weight or less to further improve thermal conductivity.
マグネシア（MgO）は海水の食塩製造に伴つ
て製造された濃縮苦汁より得られる塩化マグネシ
ウム（MgCl2）と高純度生石灰（CaO）の水和物
であるCa（OH）2とで、以下の反応工程を行う。 Magnesia (MgO) is produced by the following reaction between magnesium chloride (MgCl 2 ), which is obtained from concentrated bittern produced during the production of salt from seawater, and Ca(OH) 2 , which is a hydrate of high-purity quicklime (CaO). Perform the process.
MgCl2＋Ca（OH）2
→Mg（OH）2＋CaCl2
この生成したMg（OH）2を約400℃で脱水反応
してMgOを得る。MgCl 2 +Ca(OH) 2 →Mg(OH) 2 +CaCl 2This generated Mg(OH) 2 is subjected to a dehydration reaction at approximately 400°C to obtain MgO.
Mg（OH）2MgO＋H2O
なおこの反応は可逆反応であり、マグネシアは
吸湿してMg（OH）2に戻り好ましくない。そこで
適当な粘度のマグネシア（MgO）とB2O3とを重
量比85：15程度の混合比で混合し約1000℃で焼成
すると、B2O3は液相または気相でMgOの表面に
反応し、3MgO・B2O3または2MgO・B2O3の複
酸化物を形成する。この複酸化物はマグネシア
（MgO）表面を被覆しNDフイラー（商品名）を
形成する。NDフイラーはマグネシア（MgO）と
異なり、吸湿せず安定したフイラーとして利用で
きる。 Mg(OH) 2 MgO+H 2 O This reaction is a reversible reaction, and magnesia absorbs moisture and returns to Mg(OH) 2 , which is not desirable. Therefore, when magnesia (MgO) with an appropriate viscosity and B 2 O 3 are mixed at a weight ratio of about 85:15 and fired at about 1000°C, B 2 O 3 is deposited on the surface of MgO in the liquid or gas phase. Reacts to form a double oxide of 3MgO.B 2 O 3 or 2MgO.B 2 O 3 . This double oxide coats the surface of magnesia (MgO) to form ND filler (trade name). Unlike magnesia (MgO), ND filler does not absorb moisture and can be used as a stable filler.
本発明に依る低熱抵抗回路基板は斯るNDフイ
ラーを30〜85重量％含有したエポキシ樹脂１２を
銅箔１３の裏面に20〜100μ厚にロールコーター
して仮乾燥した後、アルミニウム板１１の一主面
にプレスで熱圧着して形成する。然る後銅箔１３
はエツチングして導電路を形成する。なおアルミ
ニウム基板１１にスクリーン印刷あるいは塗布に
よつてエポキシ樹脂１２を付着する方法もある
が、生産効率の点でロールコーター方法が最も良
い。 The low thermal resistance circuit board according to the present invention is produced by roll coating an epoxy resin 12 containing 30 to 85% by weight of such an ND filler on the back side of a copper foil 13 to a thickness of 20 to 100 μm and temporarily drying it. It is formed by thermocompression bonding on the main surface using a press. Then copper foil 13
are etched to form conductive paths. Although there is a method of attaching the epoxy resin 12 to the aluminum substrate 11 by screen printing or coating, the roll coater method is the best in terms of production efficiency.
斯る本発明の構造に依れば、マグネシアの熱伝
導率86×10-3Cal／℃・cm・secであり、アルミナ
（Al2O3）の熱伝導率70×10-3Cal／℃・cmsecよ
りかなり放熱性が向上する。具体的には第３図に
おいて、点線で示すアルミナフイラーを配合した
エポキシ樹脂と実線で示すNDフイラーを配合し
た本発明のエポキシ樹脂との熱伝導率を比較して
いる。第３図から明らかな様に本発明の低熱抵抗
基板は従来のアルミナフイラーに比較して約60％
程度の熱伝導率の向上を図れる。 According to the structure of the present invention, the thermal conductivity of magnesia is 86×10 -3 Cal/℃・cm・sec, and the thermal conductivity of alumina (Al 2 O 3 ) is 70×10 -3 Cal/℃ - Heat dissipation is significantly improved compared to cmsec. Specifically, in FIG. 3, the thermal conductivity is compared between an epoxy resin blended with an alumina filler indicated by a dotted line and an epoxy resin of the present invention blended with an ND filler indicated by a solid line. As is clear from Figure 3, the low thermal resistance substrate of the present invention is approximately 60% lower than that of the conventional alumina filler.
Thermal conductivity can be improved to a certain degree.
またマグネシアのモース硬度は5.5〜６であり、
プレス金型を形成する焼入れ鋼のモース硬度6.5
に比べて小さいので、プレス金型の摩耗は少なく
プレス金型は従来の100万シヨツト以上に寿命を
延ばすことができる。 In addition, the Mohs hardness of magnesia is 5.5 to 6.
Mohs hardness of the hardened steel that forms the press mold is 6.5
Because it is smaller than the conventional press mold, there is less wear on the press mold, and the life of the press mold can be extended beyond the 1 million shots of conventional press molds.
(ヘ) 効果
本発明に依る低熱抵抗基板では、良熱伝導率の
マグネシアを用いるので、従来より約60％以上高
い熱伝導率を有する基板を実現できる利点を有す
る。この結果混成集積回路への高出力回路の組み
込みが可能となり、更に集積化できる回路範囲と
拡大できる。(f) Effects The low thermal resistance substrate according to the present invention uses magnesia, which has a good thermal conductivity, and therefore has the advantage of being able to realize a substrate having a thermal conductivity that is about 60% higher than that of the conventional substrate. As a result, it becomes possible to incorporate high-output circuits into the hybrid integrated circuit, and the range of circuits that can be integrated can be further expanded.
またマグネシアをNDフイラーとして用いるの
で吸湿性のあるマグネシアを低熱抵抗基板のフイ
ラーとして利用できる様になつた。 Furthermore, since magnesia is used as an ND filler, magnesia, which has hygroscopic properties, can now be used as a filler for low thermal resistance substrates.
更にマグネシアのモース硬度の低さにより、良
熱伝導性で且つプレス加工容易な低熱抵抗基板を
実現できた。 Furthermore, due to the low Mohs hardness of magnesia, it was possible to realize a low thermal resistance substrate with good thermal conductivity and easy press processing.
第１図は従来の低熱抵抗回路基板を説明する断
面図、第２図は本発明の低熱抵抗回路基板を説明
する断面図、第３図は従来と本発明の低熱抵抗基
板の熱伝導率を比較する特性図である。
１１は良熱伝導性金属基板、１２は絶縁樹脂薄
層、１３は銅箔である。
Fig. 1 is a cross-sectional view illustrating a conventional low thermal resistance circuit board, Fig. 2 is a sectional view illustrating a low thermal resistance circuit board of the present invention, and Fig. 3 shows the thermal conductivity of the conventional low thermal resistance circuit board and the low thermal resistance circuit board of the present invention. It is a characteristic diagram for comparison. 11 is a metal substrate with good thermal conductivity, 12 is an insulating resin thin layer, and 13 is a copper foil.
Claims (1)
の表面が被覆されたマグネシアを含有したエポキ
シ、フエノール、ブチラール及びメラミン樹脂か
らなる、１成分あるいは複数成分の混合された絶
縁樹脂薄層が付着された低熱抵抗回路基板を準備
する工程と、 焼入れされたプレス金型で前記低熱抵抗回路基
板をプレスする工程と、 前記低熱抵抗回路基板上に高出力回路を組込む
工程とを備えたことを特徴とする混成集積回路の
製造方法。[Claims] 1. One component or a mixture of multiple components consisting of magnesia-containing epoxy, phenol, butyral, and melamine resin whose surface is coated with boron oxide on one main surface of a metal plate with good thermal conductivity. a step of preparing a low thermal resistance circuit board to which a thin insulating resin layer is attached; a step of pressing the low thermal resistance circuit board with a hardened press mold; and a step of incorporating a high output circuit onto the low thermal resistance circuit board. A method for manufacturing a hybrid integrated circuit, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7352383A JPS59198793A (en) | 1983-04-25 | 1983-04-25 | Low thermal resistance circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7352383A JPS59198793A (en) | 1983-04-25 | 1983-04-25 | Low thermal resistance circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59198793A JPS59198793A (en) | 1984-11-10 |
| JPH0358194B2 true JPH0358194B2 (en) | 1991-09-04 |
Family
ID=13520678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7352383A Granted JPS59198793A (en) | 1983-04-25 | 1983-04-25 | Low thermal resistance circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59198793A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008187144A (en) * | 2007-01-31 | 2008-08-14 | Sanyo Electric Co Ltd | Circuit device and its manufacturing method |
-
1983
- 1983-04-25 JP JP7352383A patent/JPS59198793A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59198793A (en) | 1984-11-10 |
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