JPH0357080B2 - - Google Patents

Info

Publication number
JPH0357080B2
JPH0357080B2 JP59264784A JP26478484A JPH0357080B2 JP H0357080 B2 JPH0357080 B2 JP H0357080B2 JP 59264784 A JP59264784 A JP 59264784A JP 26478484 A JP26478484 A JP 26478484A JP H0357080 B2 JPH0357080 B2 JP H0357080B2
Authority
JP
Japan
Prior art keywords
gold
electrode
single crystal
electrodes
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59264784A
Other languages
Japanese (ja)
Other versions
JPS61146796A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP26478484A priority Critical patent/JPS61146796A/en
Publication of JPS61146796A publication Critical patent/JPS61146796A/en
Publication of JPH0357080B2 publication Critical patent/JPH0357080B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、タンタル酸リチウム単結晶の単一分
域化方法に関するものであり、特には金板、金
線、金メツキ膜または金蒸着膜からなる電極を用
いることにより電極面に着色物の付着をともなう
ことなく、能率よく単一分域化を行う方法に関す
る。
Detailed Description of the Invention (Industrial Field of Application) The present invention relates to a method for forming a lithium tantalate single crystal into a single domain, and particularly relates to a method for forming a lithium tantalate single crystal into a single domain. The present invention relates to a method for efficiently dividing into a single domain without adhesion of colored substances to the electrode surface by using an electrode consisting of the following.

(従来の技術) 従来、チヨクラルスキー法によるX軸引上げタ
ンタル酸リチウム単結晶を単一分域化する方法と
しては、引上げ単結晶の側面すなわちZ軸方向の
面にたとえば帯状の形状をした正負電極を単結晶
を挟むようにして対向配置し、キユーリー温度以
上一般には610℃以上の温度に加熱しながら両電
極間に電圧を印加することにより単一分域化する
方法が知られている。この方法において電極とし
てはもつぱり白金(Pt)が使用されているので
あるが白金電極を使用すると白金電極の結晶側表
面に異物(着色物)が付着形成し、接触抵抗損と
なるのでこれを除去することが必要であり、単一
分域化の作業が非能率的であつた。
(Prior art) Conventionally, as a method for dividing an X-axis pulled lithium tantalate single crystal into a single domain by the Czyochralski method, a band-shaped positive and negative A method is known in which electrodes are placed facing each other so as to sandwich a single crystal, and a voltage is applied between the two electrodes while heating the single crystal to a temperature higher than the Curie temperature, generally 610° C. or higher, thereby forming a single domain. In this method, platinum (Pt) is used as the electrode, but if a platinum electrode is used, foreign matter (colored matter) will adhere and form on the crystal side surface of the platinum electrode, resulting in contact resistance loss. It was necessary to remove the area, and the task of dividing into a single area was inefficient.

(発明の構成) 本発明者らはかかる従来の問題点にかんがみ鋭
意研究した結果、電極として金板、金線、金メツ
キ膜または金蒸着膜からなるものを使用すれば異
物(着色物)の付着形成がなく、しかも白金電極
の場合にみられる結晶体中への電極材料の拡散と
いう問題点も、金電極の場合には起らないことを
確認し本発明を完成した。
(Structure of the Invention) As a result of intensive research in view of the above conventional problems, the present inventors have found that if an electrode made of a gold plate, gold wire, gold plating film or gold vapor deposited film is used, foreign matter (colored matter) can be removed. The present invention was completed by confirming that there is no adhesion formation, and that the problem of diffusion of electrode material into crystals that occurs with platinum electrodes does not occur in the case of gold electrodes.

すなわち本発明は、チヨクラルスキー法引上げ
タンタル酸リチウム単結晶の側面に金板、金線、
金メツキ膜または金蒸着膜を用いたものからなる
正負電極を対向して形成し、両電極間に電圧を印
加して単一分域化することを特徴とするタンタル
酸リチウム単結晶の単一分域化方法に関するもの
である。
That is, the present invention provides a technique for attaching a gold plate, a gold wire,
A single lithium tantalate single crystal characterized by forming positive and negative electrodes made of a gold-plated film or a gold vapor-deposited film facing each other and forming a single domain by applying a voltage between the two electrodes. This relates to the regionalization method.

本発明に使用される電極は金板、金線、銅など
の基板面に金メツキ膜または金蒸着膜を形成した
ものとされるが、その電極の形態について例示す
れば第1図イ〜ニに示すとおりである。すなわち
第1図イ〜ロは板状電極を示したものであり、イ
図は厚さは0.05〜1mm付近の金電極1、ロ図は、
銅等の基板2の表面に金メツキ膜または金蒸着膜
3を形成した電極である。
The electrode used in the present invention is said to have a gold plating film or a gold vapor deposited film formed on the surface of a substrate such as a gold plate, gold wire, or copper. As shown below. That is, Figure 1 A to B show plate-shaped electrodes, where A is a gold electrode 1 with a thickness of around 0.05 to 1 mm, and B is a gold electrode 1 with a thickness of around 0.05 to 1 mm.
This electrode has a gold plating film or a gold vapor deposited film 3 formed on the surface of a substrate 2 made of copper or the like.

さらにハ図は金メツシユ電極4、ニ図は金フエ
ルト電極5を示したものであり、ハ図の金メツシ
ユを構成する金線として0.1mm径付近のものが使
用される。なお、この場合目幅については特に制
限はないが通常は1mm以下であることが望まし
い。ニ図の金フエルト5を構成する金線としては
0.01〜0.1mm径付近のもが使用され、フエルトの
厚さは通常1mm以下で充分である。
Further, Fig. C shows a gold mesh electrode 4, and Fig. D shows a gold felt electrode 5. The gold wire constituting the gold mesh in Fig. C is about 0.1 mm in diameter. In this case, there is no particular restriction on the eye width, but it is usually desirable that it be 1 mm or less. The gold wire that makes up the gold felt 5 in Figure 2 is
A felt with a diameter of around 0.01 to 0.1 mm is used, and a felt thickness of 1 mm or less is usually sufficient.

以上例示した各図の電極を構成する金材質につ
いては金のみに限定されるものでなく、これには
金と銅もしくは銀等との合金からなる材質のもの
も使用することができる。
The gold material constituting the electrodes in the figures illustrated above is not limited to gold alone, and may also be made of an alloy of gold and copper, silver, or the like.

第2図はチヨクラルスキー法で引上げたタンタ
ル酸リチウム単結晶を単一分域化するために、そ
の単結晶の側面に帯状電極(板状電極)を設置し
た状態を示す概略斜視図である。同図において1
0は単結晶であり、11はそれを支えるためのア
ルミナ台、12は帯状電極である。単一分域化を
良好に行わせるために、単結晶10と帯状電極1
2間には通常タンタル酸リチウム単結晶等の粉体
をペースト状とした充填物13を介在させる。な
お、同図中14は電極板をおさえるためのバンド
である。
Figure 2 is a schematic perspective view showing a state in which a strip electrode (plate electrode) is installed on the side of a lithium tantalate single crystal pulled by the Czyochralski method in order to separate it into a single domain. . In the same figure, 1
0 is a single crystal, 11 is an alumina stand for supporting it, and 12 is a strip electrode. In order to achieve good single segmentation, a single crystal 10 and a strip electrode 1 are used.
A filler 13 made of paste-like powder such as lithium tantalate single crystal is usually interposed between the two. Note that 14 in the figure is a band for holding down the electrode plate.

上記のようにして正負電極を設置し、加熱炉中
で所定温度に加熱しながら両電極間に電圧を印加
することにより単一分域化(ポーリング)を行
う。
The positive and negative electrodes are installed as described above, and a voltage is applied between both electrodes while heating to a predetermined temperature in a heating furnace, thereby performing single segmentation (poling).

本発明の金電極を用いる方法によれば、該金電
極の表面(結晶側表面)に異物(着色物)の付着
形成がないので、白金電極の場合のような単一分
域化の操作毎に電極表面の着色物を除去する煩雑
な作業が回避され、したがつて単一分域化の作業
能率がきわめてよいという利点が与えられる。ま
た白金電極の場合には単一分域化の操作時に電極
材料が単結晶中に拡散する傾向が認められ、問題
となつていたのであるが、本発明の金電極を用い
る方法の場合にはかかる拡散の問題は認められな
い。
According to the method using the gold electrode of the present invention, there is no adhesion of foreign matter (colored matter) on the surface of the gold electrode (crystal side surface), so it is necessary to perform the single-domain operation as in the case of platinum electrodes. The troublesome work of removing colored matter from the electrode surface is avoided, and the advantage is that the work efficiency of single-segmentation is extremely high. In addition, in the case of platinum electrodes, there was a tendency for the electrode material to diffuse into the single crystal during the single-segmentation operation, which was a problem, but in the case of the method using the gold electrodes of the present invention, Such a diffusion problem is not recognized.

なお、本発明の方法を実施するに当つての、結
晶体側面における電極の設置条件、加熱温度条
件、電圧印加条件等については従来と同様でよ
く、特別の条件を採用する必要はない。
In carrying out the method of the present invention, the conditions for installing electrodes on the side surfaces of the crystal, heating temperature conditions, voltage application conditions, etc. may be the same as conventional ones, and there is no need to adopt special conditions.

つぎに具体的実施例をあげる。 Next, specific examples will be given.

実施例 チヨクラルスキー法で製造したX軸引上げタン
タル酸リチウム単結晶(直径80mm長さ110mm)の
Z軸方向の側面に、第1図イに示す形状の金材質
からなる板状電極を第2図に示すように設置し、
加熱炉中で630℃の温度に加熱しながら90Vの電
圧を印加してポーリングを行つた。
Example A second plate-shaped electrode made of gold material having the shape shown in Fig. 1A was attached to the side surface in the Z-axis direction of an Install as shown in the diagram,
Poling was performed by applying a voltage of 90V while heating the sample to a temperature of 630°C in a heating furnace.

この結果、結晶内への金の拡散現象は認められ
ず、また電極の結晶体側の面は第3図イに示すよ
うに、着色物・異物の形成がなく、きれいな状態
であり、次の作業に支障なく再使用できた。な
お、結晶体は完全にポーリングされていた。
As a result, no diffusion of gold into the crystal was observed, and the surface of the electrode on the crystal side was in a clean state with no colored or foreign matter formed, as shown in Figure 3A. It could be reused without any problems. Note that the crystal was completely polled.

他方比較のために、上記金材質からなる板状電
極の代りに白金材料からなる同形の電極を用いた
ほかは同様にしてポーリングを行つたところ、結
晶内への白金の拡散現象が起こり、また電極の結
晶体側の面は第3図ロに示すように着色物・異物
の形成が認められた。この電極面の着色物・異物
を取除くのにてまひまがかかり作業能率が阻害さ
れた。またポーリングされた結晶体は内部に白金
が拡散しており品質に劣るものであつた。
On the other hand, for comparison, when poling was carried out in the same manner except that an electrode of the same shape made of platinum material was used instead of the plate-shaped electrode made of gold material, a phenomenon of diffusion of platinum into the crystal occurred, and As shown in FIG. 3B, formation of colored matter and foreign matter was observed on the crystal side surface of the electrode. It took some time to remove the colored matter and foreign matter from the electrode surface, which hindered work efficiency. In addition, the polled crystal had platinum diffused inside and was of poor quality.

【図面の簡単な説明】[Brief explanation of drawings]

第1図イ,ロ,ハおよびニは金材質からなる電
極をそれぞれ例示したものであり、第2図はタン
タル酸リチウム単結晶の側面に板状の正負電極を
設置した概略斜視図を示したものである。さらに
第3図イ,ロは単結晶をポーリングするために使
用した後の電極の結晶体側の面をそれぞれ示した
ものである。 1……板状電極、2……基板、3……金メツキ
膜または金蒸着膜、4……金メツシユ電極、5…
…金フエルト電極、10……単結晶、11……ア
ルミナ台、12……電極、13……充填物、14
……バンド。
Figure 1 A, B, C, and D respectively illustrate electrodes made of gold material, and Figure 2 is a schematic perspective view of plate-shaped positive and negative electrodes installed on the sides of a lithium tantalate single crystal. It is something. Furthermore, FIGS. 3A and 3B respectively show the crystal-side surface of the electrode after it has been used to poll the single crystal. DESCRIPTION OF SYMBOLS 1...Plate electrode, 2...Substrate, 3...Gold plating film or gold evaporation film, 4...Gold mesh electrode, 5...
...Gold felt electrode, 10...Single crystal, 11...Alumina stand, 12...Electrode, 13...Filling, 14
……band.

Claims (1)

【特許請求の範囲】[Claims] 1 チヨクラルスキー法引上げタンタル酸リチウ
ム単結晶の側面に金板、金線、金メツキ膜または
金蒸着膜を用いたものからなる正負電極を対向し
て形成し、両電極間に電圧を印加して単一分域化
することを特徴とするタンタル酸リチウム単結晶
の単一分域化方法。
1 Positive and negative electrodes made of a gold plate, gold wire, gold plating film, or gold evaporated film are formed facing each other on the sides of a lithium tantalate single crystal pulled by the Czyochralski method, and a voltage is applied between the two electrodes. 1. A method for single-domaining a lithium tantalate single crystal, the method comprising: forming a lithium tantalate single crystal into a single domain.
JP26478484A 1984-12-14 1984-12-14 Method for making lithium tantalate single crystal into single domain Granted JPS61146796A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26478484A JPS61146796A (en) 1984-12-14 1984-12-14 Method for making lithium tantalate single crystal into single domain

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26478484A JPS61146796A (en) 1984-12-14 1984-12-14 Method for making lithium tantalate single crystal into single domain

Publications (2)

Publication Number Publication Date
JPS61146796A JPS61146796A (en) 1986-07-04
JPH0357080B2 true JPH0357080B2 (en) 1991-08-30

Family

ID=17408144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26478484A Granted JPS61146796A (en) 1984-12-14 1984-12-14 Method for making lithium tantalate single crystal into single domain

Country Status (1)

Country Link
JP (1) JPS61146796A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2502608B2 (en) * 1987-07-20 1996-05-29 信越化学工業株式会社 Method for producing single-domain lithium tantalate single crystal
ATE164236T1 (en) * 1989-02-01 1998-04-15 Univ Leland Stanford Junior METHOD FOR CONTROLLING AREAS OF FERROELECTRIC POLARIZATION AREAS IN SOLID BODY
KR20040088448A (en) 2004-09-21 2004-10-16 정세영 manufacturing method for single crystal wire

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365299A (en) * 1976-11-25 1978-06-10 Toshiba Corp Production of single crystal of lithium tantalate extended singleorientation zone

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365299A (en) * 1976-11-25 1978-06-10 Toshiba Corp Production of single crystal of lithium tantalate extended singleorientation zone

Also Published As

Publication number Publication date
JPS61146796A (en) 1986-07-04

Similar Documents

Publication Publication Date Title
ATE76702T1 (en) THIN ELECTRODE SUPPORTED BY AN ELECTRICALLY CONDUCTING STRIP AND PROCESS FOR ITS MANUFACTURE.
GB1506587A (en) Method for producing thermoplastic film electric element
JPH0357080B2 (en)
US3705993A (en) Piezoresistive transducers and devices with semiconducting films and their manufacturing process
JP3307533B2 (en) Chip electronic component and its manufacturing method, and surge absorber and its manufacturing method
JPS60227423A (en) Adhering method of ingot
JPS61287241A (en) Manufacture of semiconductor element
EP0418345A1 (en) Process for producing a flat connection
JPH0416440B2 (en)
JPS6045595B2 (en) Method of manufacturing thermal head
JPS6048117B2 (en) Manufacturing method of piezoelectric element
JP2502608B2 (en) Method for producing single-domain lithium tantalate single crystal
JPS6051280B2 (en) Method for manufacturing lithium tantalate single crystal wafer
JP3347403B2 (en) Current collecting electrode and electrode forming method
JPS6320108Y2 (en)
JPS6232160B2 (en)
JPS6142937A (en) Manufacture of integrated circuit substrate
JPH04199801A (en) Manufacture of positive-characteristic thermistor element
JPH05259525A (en) Piezoelectric element
JPH0226761B2 (en)
JPH1167503A (en) Manufacture of positive temperature coefficient thermistor
JPS5950092B2 (en) Method of electroplating semi-insulating semiconductor material surfaces
JPS60189183A (en) Anisotropic conductor composite material and method of producing same
JPS59168681A (en) Amorphous thin film solar cell
JPS5998574A (en) Manufacture of high molecular electric conversion element

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees