JPS6232160B2 - - Google Patents
Info
- Publication number
- JPS6232160B2 JPS6232160B2 JP8441785A JP8441785A JPS6232160B2 JP S6232160 B2 JPS6232160 B2 JP S6232160B2 JP 8441785 A JP8441785 A JP 8441785A JP 8441785 A JP8441785 A JP 8441785A JP S6232160 B2 JPS6232160 B2 JP S6232160B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- cylindrical
- cutting
- axis
- lithium tantalate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 31
- 238000005520 cutting process Methods 0.000 claims description 19
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 28
- 238000007790 scraping Methods 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000005162 X-ray Laue diffraction Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はタンタル酸リチウム単結晶のウエハー
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a wafer of lithium tantalate single crystal.
酸化物圧電体の単結晶をそのＸ軸に垂直な方向
で切断して得られるＸ板ウエハーは、カラーテレ
ビジヨン受像機用のPIF表面波フイルタ等の基板
として有効である。Ｘ板ウエハーを単結晶から切
断するための都合上この単結晶はＸ軸方向に円柱
状に成長された言い換えればＸ軸を長さ方向とし
た円柱状のものが一般に製造され、利用されてい
る。このような円柱状の単結晶はチヨコラルスキ
ー法等の引き上げ法又は引き下げ法等により製造
される。次に、酸化物圧電体の円柱状単結晶から
Ｘ板ウエハーを製造する従来の代表的方法を説明
する。
An X-plate wafer obtained by cutting a single crystal of oxide piezoelectric material in a direction perpendicular to its X-axis is effective as a substrate for PIF surface wave filters for color television receivers and the like. For convenience in cutting an X-plate wafer from a single crystal, this single crystal is grown in a cylindrical shape in the X-axis direction. In other words, a cylindrical one with the length direction along the X-axis is generally manufactured and used. . Such a cylindrical single crystal is produced by a pulling method such as the Czyochoralski method or a pulling method. Next, a typical conventional method for manufacturing an X-plate wafer from a cylindrical single crystal of an oxide piezoelectric material will be described.
最初に、この単結晶のＺ軸方向をＸ線ラウエ
法等により決定し、このＺ軸に垂直な２面で単
結晶の（わん曲）側面部を第１図Ａに示す如く
一部切断する。 First, the Z-axis direction of this single crystal is determined by the X-ray Laue method, etc., and the (curved) side surface of the single crystal is partially cut along two planes perpendicular to this Z-axis as shown in Figure 1A. .
この切断をＺ軸切断という。単結晶１のＸ面
２と形成されたＺ面３とが交叉する稜の長さは
もとの円柱の半径以上が必要である。この両Ｚ
面間に５〜10V／cmの電圧をかけてポーリング
を行なう。ポーリングは結晶成長のマルチドメ
インの単結晶をシングルドメインの単結晶に変
える。 This cutting is called Z-axis cutting. The length of the edge where the X-plane 2 of the single crystal 1 and the formed Z-plane 3 intersect needs to be longer than the radius of the original cylinder. These two Z
Polling is performed by applying a voltage of 5 to 10 V/cm between the surfaces. Pauling transforms a multi-domain single crystal of crystal growth into a single-domain single crystal.
次に、Ｘ線ラウエ法等で決定した＋112.2゜
Ｙ方向に平行な面で側面部を切断して第１図Ｂ
の如くオリエンテーシヨンフラツト４を形成す
る。 Next, the side part was cut along a plane parallel to the +112.2° Y direction determined by the X-ray Laue method, etc., and the
The orientation flat 4 is formed as shown in FIG.
最後に、この単結晶をＸ軸に垂直な方向に切
断し、オリエンテーシヨンフラツト４の入つた
第１図Ｃの如くＸ板ウエハ５を得る。 Finally, this single crystal is cut in a direction perpendicular to the X-axis to obtain an X-plate wafer 5 as shown in FIG. 1C containing an orientation flat 4.
従来の方法によれば、Ｚ軸切断、オリエンテー
シヨンフラツトを形成するための切断及びウエハ
ーを得るための切断によつてそれぞれ単結晶にク
ラツクが発生することが多かつた。 According to the conventional method, cracks were often generated in the single crystal due to Z-axis cutting, cutting to form orientation flats, and cutting to obtain wafers.
特に、大口径の単結晶をＺ軸切断する時にクラ
ツクが入ることが多かつた。 In particular, cracks often occurred when cutting large diameter single crystals along the Z axis.
円柱状の成長した単結晶は内部に歪が蓄績して
いるためで、歪が集中している（102）面にクラ
ツクの発生が多いことが知られている。このよう
な切断時におけるクラツクの発生はウエハーの製
造歩留りを著しく低下させ、得られるウエハーの
製造コストを大巾に引き上げる結果となつてい
た。また、上記した従来方法で製造されたＸ板ウ
エハーの表面積は円柱状の成長した単結晶のＸ面
の表面積の約85％であり、不経済であつた。 This is because the cylindrical single crystal that grows has accumulated strain inside it, and it is known that cracks often occur on the (102) plane where strain is concentrated. The occurrence of such cracks during cutting significantly reduces the yield of wafers and significantly increases the manufacturing cost of the resulting wafers. Further, the surface area of the X-plate wafer manufactured by the above-mentioned conventional method is approximately 85% of the surface area of the X-plane of the cylindrical grown single crystal, which is uneconomical.
本発明の目的は上記点に鑑みなされたもので、
菱面体晶系のタンタル酸リチウム単結晶から高歩
留りでかつ効率よくウエハーを製造する方法を提
供することである。
The purpose of the present invention was made in view of the above points,
An object of the present invention is to provide a method for efficiently manufacturing wafers from a rhombohedral lithium tantalate single crystal with high yield.
本発明の他の目的は円柱状の上記タンタル酸リ
チウム単結晶を切断するときにクラツクが発生す
ることを防止することである。 Another object of the present invention is to prevent cracks from occurring when cutting the cylindrical lithium tantalate single crystal.
本発明のウエハーの製造方法は長さ方向をＸ軸
方向とした円柱状の菱面体のタンタル酸リチウム
単結晶からＸ板ウエハーを製造する方法で、成長
した円柱状のタンタル酸リチウム単結晶の（わん
曲）側面部分で該単結晶の特定方向にある部分を
長さ方向に沿つてカツトでなく例えば帯状にすり
落してフラツトな部分を形成することを特徴とす
る。すり落すべき上記の特定な方向とは、タンタ
ル酸リチウム単結晶の場合、〈102〉に垂直な方向
±15゜の方向である。なお、長さ方向がＸ軸であ
る円柱状の単結晶の製造は引き上げ法、例えばチ
ヨクラルスキー（Czochralski）法、又は引き下
げ法により従来と同様に実施する。これらの方法
により製造された円柱状の単結晶は内部に非常に
多くの歪を有している。
The wafer manufacturing method of the present invention is a method for manufacturing an X-plate wafer from a cylindrical rhombohedral lithium tantalate single crystal with the length direction as the X-axis direction. The method is characterized in that a portion of the single crystal in a particular direction is not cut along the length of the side surface portion, but is rubbed off in a band shape, for example, to form a flat portion. In the case of a lithium tantalate single crystal, the above-mentioned specific direction to be rubbed off is a direction of ±15° perpendicular to <102>. Note that the production of a cylindrical single crystal whose length direction is the X axis is carried out in the same manner as conventionally by a pulling method, such as the Czochralski method, or a pulling method. Cylindrical single crystals produced by these methods have a large amount of internal strain.
本発明者等はこの円柱状のLiTaO3単結晶の
〈102〉に垂直な方向にある側面部分を長さ方向に
沿つてすり落すことにより歪が除かれ、後の切断
時にも単結晶にクラツクが発生しないことを見い
出した。単結晶のＸ軸に垂直な方位のステレオ投
影図である第２図において、〈102〉と垂直な方向
即ち〈012〉方向にある側面部分ｂ及びb′のうち
の少なくとも一個所を長さ方向に沿つてすり落
す。また、これらの方向から±15゜の範囲内の側
面部分であればほぼ同様の効果があることがわか
つた。方向の決定はＸ線ラウエ法、Ｘ線回析法等
による。このすり落しによつて第３図に示すよう
に、円柱状の単結晶２０の長さ方向に沿つて帯状
のフラツトな部分２１が形成される。フラツトな
部分２１とＸ面２２とが交叉する稜の長さ（以
下、すり落し巾という）Ｗは単結晶の直径Ｒに依
存する。Ｗ／Ｒが0.2以上でＸ板ウエハーの製造
歩留りが著しく向上する。しかし、Ｗ／Ｒが0.5
よりも大きくなると、得られるＸ板ウエハーの表
面積が極めて小さくなると共にすり落しに時間が
かかり不経済である。 The present inventors removed the strain by grinding down the side surface of this cylindrical LiTaO 3 single crystal in the direction perpendicular to <102> along its length, and the single crystal remained stable during subsequent cutting. We found that this does not occur. In FIG. 2, which is a stereo projection view in the direction perpendicular to the X-axis of the single crystal, at least one of the side portions b and b' in the direction perpendicular to <102>, that is, the <012> direction, is shown in the longitudinal direction. Scrape it along. Furthermore, it was found that almost the same effect can be obtained on side portions within a range of ±15° from these directions. The direction is determined by the X-ray Laue method, the X-ray diffraction method, etc. As a result of this scraping, a band-shaped flat portion 21 is formed along the length of the cylindrical single crystal 20, as shown in FIG. The length W of the edge where the flat portion 21 intersects with the X plane 22 (hereinafter referred to as the scraping width) depends on the diameter R of the single crystal. When W/R is 0.2 or more, the manufacturing yield of X-plate wafers is significantly improved. However, W/R is 0.5
If the size is larger than that, the surface area of the resulting X-plate wafer becomes extremely small, and it takes time to scrape off, which is uneconomical.
従つて、Ｗ／Ｒは0.2〜0.5が好ましく、0.3〜
0.4が更に好ましいＷ／Ｒとオリエンテーシヨン
フラツト加工工程での良品率との実験結果を第４
図に示した。 Therefore, W/R is preferably 0.2 to 0.5, and preferably 0.3 to 0.5.
The experimental results of the W/R and the good product rate in the orientation flat processing process, which is more preferable to be 0.4, are shown in the fourth section.
Shown in the figure.
本発明方法により、円柱状の単結晶の側面部分
の特定個所をすり落す方法としては研磨又は研削
が最も簡単で且つ能率的である。 According to the method of the present invention, polishing or grinding is the simplest and most efficient method for grinding down a specific part of the side surface of a cylindrical single crystal.
通常約400〜800メツシユのアルミナ粉末を用い
て研磨又は研削する。 Polishing or grinding is usually performed using approximately 400 to 800 mesh alumina powder.
上記すり落しの代りにダイヤモンドホイール等
による切断を利用することはできない。切断では
単結晶の歪を十分除くことができないからであ
る。円柱状の単結晶の〈102〉に垂直な方向にあ
る側面部分をＷ／Ｒ＝0.3で切断及びすり落した
場合、その後のオリエンテーシヨンフラツト加工
工程でクラツクが発生する割合は切断した単結晶
では約43％であり、本方法によりすり落した単結
晶では０％であつた。更に、側面部分を一部分す
り落した単結晶をその後約1000℃以上の温度でア
ニールすると歪が一層完全に除かれる。 Cutting with a diamond wheel or the like cannot be used in place of the above-mentioned scraping. This is because the strain in the single crystal cannot be sufficiently removed by cutting. If the side surface of a cylindrical single crystal in the direction perpendicular to <102> is cut and ground down at W/R = 0.3, the rate at which cracks will occur in the subsequent orientation flat processing process will vary depending on the cut unit. In the case of crystals, it was about 43%, and in the case of single crystals ground by this method, it was 0%. Furthermore, if the single crystal with the side surface partially rubbed off is then annealed at a temperature of about 1000°C or higher, the strain will be more completely removed.
単結晶の特定方向にある側面部分をすり落した
単結晶はその後従来と同様に、Ｚ軸切断オリエン
テーシヨンフラツトを入れるための切断を経てＸ
板ウエハーに切断されてもよい。 The single crystal from which side parts in a particular direction have been scraped off is then cut to insert a Z-axis cutting orientation flat in the same manner as before.
It may also be cut into plate wafers.
本方法によれば、各切断工程で単結晶にクラツ
クがほとんど入らない。尚Ｚ軸切断をせずに円柱
状のままポーリングすることができるので好都合
である。
According to this method, there are almost no cracks in the single crystal during each cutting process. Furthermore, it is convenient because it is possible to poll the columnar shape without cutting it along the Z axis.
次に、本発明を実施例により更に詳しく説明す
る。 Next, the present invention will be explained in more detail with reference to Examples.
〔発明の実施例〕
実施例 １
チヨクラルスキー（Czochralski）法によりル
ツボ例えば20〜40％のRhを含むPtルツボを用い
て直経60mm、長さ40mmのタンタル酸リチウムの円
柱状単結晶を製造した。この円柱状単結晶は長さ
方向がＸ軸となるように成長させた。この円柱状
単結晶の〈102〉に垂直な方向Ｘ線ラウエ法によ
り決定した。[Embodiments of the Invention] Example 1 A cylindrical single crystal of lithium tantalate with a diameter of 60 mm and a length of 40 mm was produced by the Czochralski method using a crucible, for example, a Pt crucible containing 20 to 40% Rh. did. This cylindrical single crystal was grown so that the length direction was the X axis. It was determined by the X-ray Laue method in the direction perpendicular to <102> of this cylindrical single crystal.
この円柱状単結晶を治具に取り付け、〈102〉に
垂直な方向の側面部分をすり落し巾15mmですり落
した。このすり落しはダイヤモンド又はアルミナ
粉で形成したヤスリですり落す。 This cylindrical single crystal was attached to a jig, and the side surface in the direction perpendicular to <102> was ground down to a width of 15 mm. This scraping is done with a file made of diamond or alumina powder.
その後、単結晶をＺ軸切断し、ポーリングして
単分域化した。次に、＋112.2゜Ｙ方向に沿つてオ
リエンテーシヨンフラツトを形成した。最後に、
単結晶をＸ軸に垂直な方向に切断して厚さ0.5mm
のＸ板ウエハーを製造した。１個の単結晶からＸ
板ウエハー40枚がクラツクが発生することなく製
造できた。 Thereafter, the single crystal was cut along the Z axis and polled to form a single domain. Next, an orientation flat was formed along the +112.2° Y direction. lastly,
Cut the single crystal in the direction perpendicular to the X axis to a thickness of 0.5 mm.
An X-plate wafer was manufactured. X from one single crystal
40 flat wafers were manufactured without any cracks.
従来の方法によりＸ板ウエハーを製造した場合
上記と同じ大きさの円柱状単結晶から平均25枚の
Ｘ板ウエハーが得られた。従つて、本方法によれ
ば従来方法よりもウエハー製造歩留りが1.6倍と
なつた。 When X-plate wafers were manufactured by the conventional method, an average of 25 X-plate wafers were obtained from a cylindrical single crystal of the same size as above. Therefore, according to this method, the wafer manufacturing yield was 1.6 times higher than that of the conventional method.
実施例 ２
実施例１と同じ方法により同じ大きさの円柱状
単結晶を用意した。この単結晶を円柱状の結晶の
まま単分域化した。その後、Ｘ線ラウエ法により
〈102〉に垂直な方向から＋15゜傾いた方向を求
め、この方向の側面部分を実施例１と同様にして
すり落し巾15mmですり落した。次に、112.2゜Ｙ
方向に沿つてオリエンテーシヨンフラツトを形成
した。この時の切断でクラツクは発生しなかつ
た。その後単結晶から厚さ0.5mmのＸ板ウエハー
を切断した。全くクラツクが入らずに40枚のウエ
ハーが得られた。各ウエハーから2.7mm×10mmの
チツプ基板が25枚製造できた。従つて、１個の円
柱状単結晶から1000のチツプ基板が得られた。Example 2 Cylindrical single crystals of the same size were prepared by the same method as in Example 1. This single crystal was made into a single domain while still being a cylindrical crystal. Thereafter, a direction inclined by +15° from the direction perpendicular to <102> was determined by the X-ray Laue method, and the side surface portion in this direction was rubbed off in the same manner as in Example 1 with a width of 15 mm. Next, 112.2゜Y
An orientation flat was formed along the direction. No cracks occurred during this cutting. Thereafter, X-plate wafers with a thickness of 0.5 mm were cut from the single crystal. 40 wafers were obtained without any cracks. Twenty-five 2.7 mm x 10 mm chip substrates were produced from each wafer. Therefore, 1000 chip substrates were obtained from one cylindrical single crystal.
これに対して、すり落し工程を除いて上記と同
様にしてＸ板ウエハーを製造した場合、クラツク
の発生のため同じ大きさの単結晶から25枚のＸ板
ウエハーしか製造できなかつた。このＸ板ウエハ
ー１枚から上記寸法の基板が25枚製造できた。従
つて、１個の円柱状単結晶から625枚のチツプ基
板しか製造できなかつた。 On the other hand, when X-plate wafers were manufactured in the same manner as above except for the scraping process, only 25 X-plate wafers could be manufactured from the same size single crystal due to the occurrence of cracks. 25 substrates of the above dimensions could be manufactured from one X-plate wafer. Therefore, only 625 chip substrates could be manufactured from one cylindrical single crystal.
更に、従来方法に従つてポーリングのためにＺ
軸切断を行なつた場合には、Ｘ板ウエハーの表面
積が小さいので上記寸法のチツプ基板がＸ板ウエ
ハー１枚から18枚しか製造できない。従つて、１
個の円柱状単結晶から450枚以下のチツプ基板し
か製造できない。 Furthermore, according to the conventional method, Z
When axial cutting is performed, only 18 chip substrates of the above dimensions can be manufactured from one X-plate wafer because the surface area of the X-plate wafer is small. Therefore, 1
Only 450 or fewer chip substrates can be manufactured from a single cylindrical single crystal.
第１図は従来方法を説明するための図、第２図
は本発明方法の実施例を説明するためのすり落し
の方向を説明するための、単結晶のＸ軸に垂直な
方位のステレオ投影図、第３図は本発明方法の実
施例を説明するための側面部分の一部をすり落し
て帯状のフラツトな部分を形成して単結晶の斜視
図、第４図は本発明方法による単結晶の直径Ｒに
対するすり落し巾Ｗの比、Ｗ／Ｒとすり落し後の
オリエンテーシヨンフラツト加工工程での良品率
との関係を示すグラフである。
２０…単結晶、２１…フラツト部分、２２…Ｘ
面。
Fig. 1 is a diagram for explaining the conventional method, and Fig. 2 is a stereo projection in the direction perpendicular to the X-axis of the single crystal to explain the direction of scraping to explain the embodiment of the method of the present invention. 3 is a perspective view of a single crystal obtained by scraping off a part of the side surface to form a band-shaped flat part, and FIG. 4 is a perspective view of a single crystal obtained by the method of the present invention. It is a graph showing the relationship between the ratio of the scraping width W to the diameter R of the crystal, W/R, and the non-defective product rate in the orientation flat processing step after scraping. 20...Single crystal, 21...Flat part, 22...X
surface.
Claims (1)
ム単結晶を引上げる工程と、該工程で引上げられ
たタンタル酸リチウム単結晶をポーリングする工
程と、該ポーリングしたタンタル酸リチウム単結
晶の〈102〉±15゜方向に直交した方向をすり落し
研磨加工する工程と、該工程後にすり落し研磨加
工した方向と異なる方向にオリエンテーシヨンフ
ラツトを形成する工程と、該工程後に前記タンタ
ル酸リチウムを切断してウエハーにする工程とを
具備したことを特徴とするタンタル酸リチウム単
結晶ウエハーの製造方法。 ２ すり落すのは帯状であることを特徴とする前
記特許請求の範囲第１項記載のタンタル酸リチウ
ム単結晶ウエハーの製造方法。[Claims] 1. A step of pulling a lithium tantalate single crystal in the X-axis direction by a pulling method, a step of poling the lithium tantalate single crystal pulled in the step, and a step of poling the lithium tantalate single crystal pulled in the step; A step of grinding and polishing in a direction perpendicular to the <102> ±15° direction of 1. A method for producing a lithium tantalate single crystal wafer, comprising the step of cutting lithium tantalate into a wafer. 2. The method for manufacturing a lithium tantalate single crystal wafer according to claim 1, wherein the material to be rubbed off is in the form of a band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60084417A JPS60246299A (en) | 1985-04-22 | 1985-04-22 | Production of lithium tantalate single crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60084417A JPS60246299A (en) | 1985-04-22 | 1985-04-22 | Production of lithium tantalate single crystal wafer |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51119417A Division JPS6051280B2 (en) | 1976-10-06 | 1976-10-06 | Method for manufacturing lithium tantalate single crystal wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60246299A JPS60246299A (en) | 1985-12-05 |
| JPS6232160B2 true JPS6232160B2 (en) | 1987-07-13 |
Family
ID=13830009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60084417A Granted JPS60246299A (en) | 1985-04-22 | 1985-04-22 | Production of lithium tantalate single crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60246299A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62191496A (en) * | 1986-02-18 | 1987-08-21 | Shin Etsu Chem Co Ltd | Single crystal wafer of lithium tantalate |
| KR100496526B1 (en) * | 2002-09-25 | 2005-06-22 | 일진디스플레이(주) | Method of producing lithium tantalate substrate for surface acoustic wave element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5345187A (en) * | 1976-10-06 | 1978-04-22 | Toshiba Corp | Wafer production of oxide piezoelectric material |
-
1985
- 1985-04-22 JP JP60084417A patent/JPS60246299A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5345187A (en) * | 1976-10-06 | 1978-04-22 | Toshiba Corp | Wafer production of oxide piezoelectric material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60246299A (en) | 1985-12-05 |
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