JPH0356042Y2 - - Google Patents
Info
- Publication number
- JPH0356042Y2 JPH0356042Y2 JP1982055268U JP5526882U JPH0356042Y2 JP H0356042 Y2 JPH0356042 Y2 JP H0356042Y2 JP 1982055268 U JP1982055268 U JP 1982055268U JP 5526882 U JP5526882 U JP 5526882U JP H0356042 Y2 JPH0356042 Y2 JP H0356042Y2
- Authority
- JP
- Japan
- Prior art keywords
- coil
- susceptor
- coil support
- support
- frequency heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982055268U JPS58158438U (ja) | 1982-04-16 | 1982-04-16 | エピタキシヤル成長装置のコイル保持装置 |
| GB08309427A GB2120279B (en) | 1982-04-16 | 1983-04-07 | Support for induction heating coil in epitaxial growing apparatus of semiconductor wafers |
| KR1019830001556A KR840004824A (ko) | 1982-04-16 | 1983-04-14 | 반도체 웨이퍼의 에피택셜 생장장치 |
| DE19833313695 DE3313695A1 (de) | 1982-04-16 | 1983-04-15 | Geraet zum epitaxialen aufwachsen von schichten auf halbleitersubstraten |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982055268U JPS58158438U (ja) | 1982-04-16 | 1982-04-16 | エピタキシヤル成長装置のコイル保持装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58158438U JPS58158438U (ja) | 1983-10-22 |
| JPH0356042Y2 true JPH0356042Y2 (US20090163788A1-20090625-C00002.png) | 1991-12-16 |
Family
ID=12993852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1982055268U Granted JPS58158438U (ja) | 1982-04-16 | 1982-04-16 | エピタキシヤル成長装置のコイル保持装置 |
Country Status (4)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1271233B (it) * | 1994-09-30 | 1997-05-27 | Lpe | Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati |
| US6436796B1 (en) * | 2000-01-31 | 2002-08-20 | Mattson Technology, Inc. | Systems and methods for epitaxial processing of a semiconductor substrate |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4921091B1 (US20090163788A1-20090625-C00002.png) * | 1970-08-10 | 1974-05-29 | ||
| JPS523647B2 (US20090163788A1-20090625-C00002.png) * | 1972-10-24 | 1977-01-29 | ||
| US3887411A (en) * | 1973-12-20 | 1975-06-03 | Ford Motor Co | Making a triple density article of silicon nitride |
| GB1522705A (en) * | 1974-11-11 | 1978-08-23 | Asea Ab | Method of manufacturing bodies of silicon nitride |
| US4119689A (en) * | 1977-01-03 | 1978-10-10 | General Electric Company | Sintering of silicon nitride using Be additive |
| DE2800174A1 (de) * | 1978-01-03 | 1979-07-12 | Max Planck Gesellschaft | Verfahren zum sintern von siliciumnitrid-formkoerpern |
-
1982
- 1982-04-16 JP JP1982055268U patent/JPS58158438U/ja active Granted
-
1983
- 1983-04-07 GB GB08309427A patent/GB2120279B/en not_active Expired
- 1983-04-14 KR KR1019830001556A patent/KR840004824A/ko not_active Application Discontinuation
- 1983-04-15 DE DE19833313695 patent/DE3313695A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2120279A (en) | 1983-11-30 |
| DE3313695A1 (de) | 1983-10-27 |
| GB2120279B (en) | 1986-09-10 |
| JPS58158438U (ja) | 1983-10-22 |
| KR840004824A (ko) | 1984-10-24 |
| DE3313695C2 (US20090163788A1-20090625-C00002.png) | 1987-10-22 |
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