JPH0355617A - Semiconductor circuit - Google Patents
Semiconductor circuitInfo
- Publication number
- JPH0355617A JPH0355617A JP19174689A JP19174689A JPH0355617A JP H0355617 A JPH0355617 A JP H0355617A JP 19174689 A JP19174689 A JP 19174689A JP 19174689 A JP19174689 A JP 19174689A JP H0355617 A JPH0355617 A JP H0355617A
- Authority
- JP
- Japan
- Prior art keywords
- output
- power supply
- change
- gnd
- signals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 239000000872 buffer Substances 0.000 claims abstract description 22
- 230000007257 malfunction Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
Landscapes
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路に関し、特に出力バッフ−アー
回路に関する.
〔従来の技術〕
従来、この種の出力バッファ一回路は第3図に示される
様に共通の電源1,Gnd2に接続され、入力信号3,
4,5,8を出力バッファ12,13,14.15を通
して出力端子8,9,10,11に出力されていた.
〔発明が解決しようとする課題〕
上述した従来の出力バッファ回路は共通の電源,Gnd
に接続されているので同時に多数の出カバッファ回路の
出力信号が変化すると通常、電源,Gndに大電流が一
時的に流れる.CMOS回路を使用した出力バッファ回
路では出力信号の変化時、貢通電流として大電流が流れ
電源,Gndの電位が変化し第4図に示されたノイズ2
1が発生する場合がある.
従って出力バッファ回路が同時に変化する数が増加した
場合や高速化するとノイズ2lが顕著になり、ノイズを
含んだ信号を供給された装置が誤動作するという欠点が
ある.
〔課題を解決するための手段〕
本発明の半導体集積回路は複数の出力変化タイミングと
共通の電源,Gndを有する出力バッファ群において一
方の出力変化タイミング時に他の出力端子を電源.Gn
dより分離する手段を有している.
〔実施例〕
次に、本発明について図面を参照して説明する.第1図
は本発明の一実施例の出力回路である。出カバッファ1
2,13,14.15は電源1,Gnd2に接続され、
出力バッファ12,13.14に各々第1の入力信号3
,4.5が入力されている.又出力バッファl5に第2
の入力信号6が入力され、かつ出力バッファ15の出力
はPチャンネルMOS}ランジスタ17とNチャンネル
MOS}ランジスタ18を通して出力端子11に接続さ
れている.又第3の入力信号7はPチャンネルMOS}
ランジスタ17,インバータ16に入力されている.
第1図の入出力波形図である第2図を参照し説明する.
第1の入力信号3,4.5が変化する事により出力端子
8,9.10が同時に変化する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and particularly to an output buffer circuit. [Prior Art] Conventionally, this type of output buffer circuit is connected to a common power supply 1 and Gnd2 as shown in FIG.
4, 5, and 8 were output to output terminals 8, 9, 10, and 11 through output buffers 12, 13, 14, and 15. [Problem to be solved by the invention] The conventional output buffer circuit described above has a common power supply, Gnd
Therefore, when the output signals of many output buffer circuits change at the same time, a large current usually flows temporarily in the power supply and Gnd. In an output buffer circuit using a CMOS circuit, when the output signal changes, a large current flows as a tributary current, and the potential of the power supply and Gnd changes, causing noise 2 shown in Figure 4.
1 may occur. Therefore, when the number of output buffer circuits that change simultaneously increases or when the speed increases, the noise 2l becomes noticeable, and there is a drawback that devices supplied with noise-containing signals malfunction. [Means for Solving the Problems] The semiconductor integrated circuit of the present invention has a group of output buffers having a plurality of output change timings and a common power source, Gnd, in which the other output terminals are connected to the power source at one output change timing. Gn
It has a means to separate it from d. [Example] Next, the present invention will be explained with reference to the drawings. FIG. 1 shows an output circuit according to an embodiment of the present invention. Output buffer 1
2, 13, 14.15 are connected to power supply 1, Gnd2,
The output buffers 12, 13, and 14 each receive the first input signal 3.
, 4.5 are input. Also, a second
, and the output of the output buffer 15 is connected to the output terminal 11 through a P-channel MOS transistor 17 and an N-channel MOS transistor 18. Also, the third input signal 7 is a P-channel MOS}
It is input to transistor 17 and inverter 16. This will be explained with reference to Figure 2, which is an input/output waveform diagram of Figure 1.
As the first input signals 3, 4.5 change, the output terminals 8, 9.10 change simultaneously.
第3の入力信号7は出力端子8,9.10の出力が変化
する期間NチャンネルMOS}ランジスタ18,Pチャ
ンネルMOS}ランジスタ17をOFFさせる.、従っ
て同一電源,Gndに接続された出力バッファ12,1
3.14の出力信号が同時に変化する期間、出力バッフ
ァl5の出力は出力端子11と切離される。従って電源
,Gndを通して出力バッファ12,13.14の出力
変化時発生するノイズ信号が出力端子1lから出力され
る事が防止される.
第5図は本発明の他の実施例の出力回路図である。出力
バッファ12,13,14は電源l,Gnd2に接続さ
れ各々第1の入力信号3,4,5が入力され、出力端子
8.,9.10に接続されている.第2の入力信号6は
PチャンネルMOSトランジスタ17.19とNチャン
ネルMOS}ランジスタ18.19で構威されたクロッ
クドインバータ型式の出力バ,ファに入力されている。The third input signal 7 turns off the N-channel MOS transistor 18 and the P-channel MOS transistor 17 during the period when the outputs of the output terminals 8, 9, and 10 change. , therefore the output buffers 12,1 connected to the same power supply, Gnd
During the period when the output signals of 3.14 change simultaneously, the output of the output buffer l5 is disconnected from the output terminal 11. Therefore, noise signals generated when the outputs of the output buffers 12, 13, and 14 change through the power supply and Gnd are prevented from being output from the output terminal 1l. FIG. 5 is an output circuit diagram of another embodiment of the present invention. Output buffers 12, 13, and 14 are connected to power supplies 1 and Gnd2, and receive first input signals 3, 4, and 5, respectively, and output terminals 8. ,9.10 is connected. The second input signal 6 is input to an output buffer of the clocked inverter type composed of a P-channel MOS transistor 17.19 and an N-channel MOS transistor 18.19.
第3の入力信号7はPチャンネルMOS}ランジスタ1
7,インバータ16に入力されている。The third input signal 7 is a P-channel MOS} transistor 1
7, is input to the inverter 16.
従って実施例1と同様に第3の入力信号7は出力端子8
,9.10の出力信号が変化する期間NチャンネルMO
S}ランジスタ18,PチャンネルMOS}ランジスタ
17をOF’Fさせる。NチャンネルMOS}ランジス
タ8とPチャンネルMOS}ランジスタ17をOFFさ
せる事によりノイズ信号を防止するのは実施例1と同様
である。Therefore, as in the first embodiment, the third input signal 7 is sent to the output terminal 8.
, 9. The period during which the output signals of 10 change N-channel MO
S} transistor 18, P channel MOS} transistor 17 is turned off. As in the first embodiment, noise signals are prevented by turning off the N-channel MOS transistor 8 and the P-channel MOS transistor 17.
以上説明したように本発明は他の出力バッファの出力信
号が変化する期間出力端子を共通の電源,.Gndより
分離する事によりノイズ信号が出力端子から出力される
事が防止され、外部装置の誤動作が防止される。As explained above, in the present invention, the output terminals are connected to a common power supply during periods when the output signals of other output buffers change. By separating it from Gnd, noise signals are prevented from being output from the output terminal, and malfunctions of external devices are prevented.
第1図は本発明の第1実施例の出力回路図、第2図は第
1図の入出力波形図、第3図は従来の出力回路図、第4
図は第3図の出力波形図、第5図は第2実施例の出力回
路図である.
l・・・・・・電源、2・・・・・・Gnd,3,4.
5・・・・・・第1の入力信号、6・・・・・・第2の
入力信号、7・・・・・・第3の入力信号、8,9,1
0.11・・・・・・出力端子、12,13,14.1
5・・・・・・出力ハッファ、16・・・・・・インバ
ータ.17,19・・・・・・PチャンネルMOSトラ
ンジスタ、
18,
20・・・・・・NチャンネルMO
Sトランジスタ、
21・・・・・・ノイズ。Fig. 1 is an output circuit diagram of the first embodiment of the present invention, Fig. 2 is an input/output waveform diagram of Fig. 1, Fig. 3 is a conventional output circuit diagram, and Fig. 4 is a conventional output circuit diagram.
The figure is an output waveform diagram of Figure 3, and Figure 5 is an output circuit diagram of the second embodiment. l...Power supply, 2...Gnd, 3, 4.
5...First input signal, 6...Second input signal, 7...Third input signal, 8, 9, 1
0.11...Output terminal, 12, 13, 14.1
5... Output huffer, 16... Inverter. 17, 19...P channel MOS transistor, 18, 20...N channel MOS transistor, 21...Noise.
Claims (1)
続された出力バッファ群において、一方の出力変化タイ
ミング時に他の出力端子を電源より分離する事を特長と
する半導体回路。A semiconductor circuit characterized in that, in a group of output buffers having multiple output change timings and connected to a common power supply, other output terminals are isolated from the power supply at the time of one output change timing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1191746A JP3018351B2 (en) | 1989-07-24 | 1989-07-24 | Semiconductor circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1191746A JP3018351B2 (en) | 1989-07-24 | 1989-07-24 | Semiconductor circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0355617A true JPH0355617A (en) | 1991-03-11 |
JP3018351B2 JP3018351B2 (en) | 2000-03-13 |
Family
ID=16279816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1191746A Expired - Lifetime JP3018351B2 (en) | 1989-07-24 | 1989-07-24 | Semiconductor circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3018351B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016112780A1 (en) * | 2015-01-13 | 2016-07-21 | 深圳信炜科技有限公司 | Multi-chip packaging structure and electronic device |
-
1989
- 1989-07-24 JP JP1191746A patent/JP3018351B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016112780A1 (en) * | 2015-01-13 | 2016-07-21 | 深圳信炜科技有限公司 | Multi-chip packaging structure and electronic device |
Also Published As
Publication number | Publication date |
---|---|
JP3018351B2 (en) | 2000-03-13 |
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