JPH0355073B2 - - Google Patents
Info
- Publication number
- JPH0355073B2 JPH0355073B2 JP62336752A JP33675287A JPH0355073B2 JP H0355073 B2 JPH0355073 B2 JP H0355073B2 JP 62336752 A JP62336752 A JP 62336752A JP 33675287 A JP33675287 A JP 33675287A JP H0355073 B2 JPH0355073 B2 JP H0355073B2
- Authority
- JP
- Japan
- Prior art keywords
- charge
- shift register
- register
- photoelectric
- pulses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012546 transfer Methods 0.000 claims description 60
- 230000005693 optoelectronics Effects 0.000 claims description 25
- 230000004888 barrier function Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 4
- 230000014759 maintenance of location Effects 0.000 claims 5
- 230000000750 progressive effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 7
- 238000013459 approach Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US947,131 | 1986-12-29 | ||
| US06/947,131 US4752829A (en) | 1986-12-29 | 1986-12-29 | Multipacket charge transfer image sensor and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63232685A JPS63232685A (ja) | 1988-09-28 |
| JPH0355073B2 true JPH0355073B2 (cg-RX-API-DMAC7.html) | 1991-08-22 |
Family
ID=25485572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62336752A Granted JPS63232685A (ja) | 1986-12-29 | 1987-12-29 | マルチパケット電荷転送画像センサ及び方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4752829A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0273831A3 (cg-RX-API-DMAC7.html) |
| JP (1) | JPS63232685A (cg-RX-API-DMAC7.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4805026A (en) * | 1986-02-18 | 1989-02-14 | Nec Corporation | Method for driving a CCD area image sensor in a non-interlace scanning and a structure of the CCD area image sensor for driving in the same method |
| FR2625593B1 (fr) * | 1988-01-05 | 1990-05-04 | Thomson Csf | Procede et circuit de lecture a faible bruit pour matrice photosensible a transfert de ligne |
| JPH0514816A (ja) * | 1991-06-28 | 1993-01-22 | Sharp Corp | 固体撮像装置およびその駆動方法 |
| US5343297A (en) * | 1992-09-17 | 1994-08-30 | General Electric Company | Charge amplifier with precise, integer gain |
| US5396121A (en) * | 1992-10-21 | 1995-03-07 | Sharp Kabushiki Kaisha | Solid-state imaging device and a method for driving the same |
| US7456891B2 (en) | 2003-06-12 | 2008-11-25 | Eastman Kodak Company | Multiple read photodiode |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE364434C (de) * | 1922-11-27 | Hans Bader | Lesezeichen | |
| US3715485A (en) * | 1971-10-12 | 1973-02-06 | Rca Corp | Radiation sensing and signal transfer circuits |
| US3763480A (en) * | 1971-10-12 | 1973-10-02 | Rca Corp | Digital and analog data handling devices |
| JPS55121642A (en) * | 1979-03-14 | 1980-09-18 | Fujitsu Ltd | Preparation of semiconductor device |
| DE2939490A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe |
| JPS57104377A (en) * | 1980-12-19 | 1982-06-29 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
| JPS57148478A (en) * | 1981-03-09 | 1982-09-13 | Canon Inc | Solid image pickup device |
| CA1199400A (en) * | 1982-04-07 | 1986-01-14 | Norio Koike | Solid-state imaging device |
| GB2122833B (en) * | 1982-06-24 | 1985-06-26 | Ferranti Plc | Radiation detecting apparatus |
| FR2533056B1 (fr) * | 1982-09-14 | 1987-05-15 | Thomson Csf | Imageur a transfert de lignes et camera de television comportant un tel imageur |
| JPS5984575A (ja) * | 1982-11-08 | 1984-05-16 | Hitachi Ltd | 固体撮像素子 |
| US4528594A (en) * | 1983-04-20 | 1985-07-09 | Xerox Corporation | High resolution quadrilinear CCD imager |
| JPS60109271A (ja) * | 1983-11-18 | 1985-06-14 | Toshiba Corp | 固体撮像装置の駆動方法 |
| JPS60183881A (ja) * | 1984-03-01 | 1985-09-19 | Mitsubishi Electric Corp | 固体撮像素子 |
| US4620231A (en) * | 1984-06-18 | 1986-10-28 | Rca Corporation | CCD imager with photodetector bias introduced via the CCD register |
| JPS62126667A (ja) * | 1985-11-27 | 1987-06-08 | Mitsubishi Electric Corp | 固体撮像素子 |
-
1986
- 1986-12-29 US US06/947,131 patent/US4752829A/en not_active Expired - Lifetime
-
1987
- 1987-12-29 JP JP62336752A patent/JPS63232685A/ja active Granted
- 1987-12-29 EP EP87403001A patent/EP0273831A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0273831A3 (en) | 1990-01-17 |
| EP0273831A2 (en) | 1988-07-06 |
| US4752829A (en) | 1988-06-21 |
| JPS63232685A (ja) | 1988-09-28 |
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