JPH0353403Y2 - - Google Patents
Info
- Publication number
- JPH0353403Y2 JPH0353403Y2 JP3081087U JP3081087U JPH0353403Y2 JP H0353403 Y2 JPH0353403 Y2 JP H0353403Y2 JP 3081087 U JP3081087 U JP 3081087U JP 3081087 U JP3081087 U JP 3081087U JP H0353403 Y2 JPH0353403 Y2 JP H0353403Y2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- base
- gas
- supply pipe
- ion species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 11
- 239000000615 nonconductor Substances 0.000 claims description 4
- 239000003507 refrigerant Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 23
- 150000002500 ions Chemical class 0.000 description 14
- 239000001307 helium Substances 0.000 description 9
- 229910052734 helium Inorganic materials 0.000 description 9
- 238000000605 extraction Methods 0.000 description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- SWQJXJOGLNCZEY-BJUDXGSMSA-N helium-3 atom Chemical compound [3He] SWQJXJOGLNCZEY-BJUDXGSMSA-N 0.000 description 2
- -1 helium ions Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3081087U JPH0353403Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-03-03 | 1987-03-03 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3081087U JPH0353403Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-03-03 | 1987-03-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63137452U JPS63137452U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-09-09 |
JPH0353403Y2 true JPH0353403Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-11-21 |
Family
ID=30835965
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3081087U Expired JPH0353403Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-03-03 | 1987-03-03 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0353403Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2012341B1 (en) * | 2007-07-06 | 2012-05-02 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Modular gas ion source |
US8779380B2 (en) * | 2008-06-05 | 2014-07-15 | Hitachi High-Technologies Corporation | Ion beam device |
-
1987
- 1987-03-03 JP JP3081087U patent/JPH0353403Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS63137452U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-09-09 |