JPH035339A - Quartz glass for transmitting ultraviolet ray - Google Patents
Quartz glass for transmitting ultraviolet rayInfo
- Publication number
- JPH035339A JPH035339A JP13583489A JP13583489A JPH035339A JP H035339 A JPH035339 A JP H035339A JP 13583489 A JP13583489 A JP 13583489A JP 13583489 A JP13583489 A JP 13583489A JP H035339 A JPH035339 A JP H035339A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- impurities
- ultraviolet rays
- ultraviolet
- solarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910052742 iron Inorganic materials 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 29
- 238000004031 devitrification Methods 0.000 abstract description 2
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 description 11
- 238000000862 absorption spectrum Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007847 structural defect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、変電なる紫外線の長時間反復照射によっても
着色（ソーラリゼーション）、失透を抑制する、紫外線
透過用石英ガラスに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a quartz glass for transmitting ultraviolet rays that suppresses coloration (solarization) and devitrification even when subjected to long-term repeated irradiation with ultraviolet rays during electrical transformation.
半導体産業において、素子の微細化、高集積化は時代の
趨勢である。In the semiconductor industry, the trend of the times is miniaturization and higher integration of elements.
それに対処するために、例えば波長の短い紫外線を光源
とする露光機や、紫外線を照射しながら蒸着することに
より低温で高品位の被膜を得る光ＣＶＤ法等が開発され
つつある。To deal with this, for example, exposure machines that use short-wavelength ultraviolet rays as a light source and photo-CVD methods that obtain high-quality films at low temperatures by vapor deposition while irradiating ultraviolet rays are being developed.
これらの紫外線応用機器の光学系や光透過用の窓材、光
源用ランプ等には一般に、石英ガラスが使用される。Quartz glass is generally used for the optical systems, window materials for light transmission, lamps for light sources, etc. of these ultraviolet ray application devices.
当該石英ガラスの材料は、紫外線透過率が良いことが必
須の条件となるので、例えば四塩化珪素の加水分解等で
合成される合成石英ガラスが使用される。Since it is essential that the quartz glass material has good ultraviolet transmittance, synthetic quartz glass synthesized by, for example, hydrolysis of silicon tetrachloride is used.
しかしながら、・使用当初は紫外線透過率が高い石英ガ
ラスでも紫外線照射を長時間反復して行うと次第に着色
し透過率が減少する、いわゆるソーラリゼーションが起
こり、装置の再現性等に大きな影響を及ぼす問題点が存
する。However, even though quartz glass has high ultraviolet transmittance when first used, repeated exposure to ultraviolet rays over a long period of time causes it to gradually become colored and its transmittance decreases, a phenomenon known as solarization, which has a major impact on the reproducibility of the device. There are problems.
そのため、ソーラリゼーションの低減した石英ガラスの
開発が強く望まれている。Therefore, the development of quartz glass with reduced solarization is strongly desired.
上記、従来の紫外′４１Ａ透過用石英ガラスは不純物と
してＡｌ５Ｖ％ Ｔｉ 、、Ｎｉ 、、Ｎａ 、、Ｃｕ
、Ｈ。The above-mentioned conventional quartz glass for transmitting ultraviolet '41A contains Al5V% Ti, Ni, Na, Cu as impurities.
,H.
Ｃ７！、Ｋ ％ Ｆ ｅ等を含み、その各濃度を０．１
ｐｐｍ以下に抑えた紫外線透過用石英ガラスは存在し
なかった。C7! , K % Fe, etc., each concentration of which is 0.1
There was no quartz glass for transmitting ultraviolet rays that suppressed the amount to ppm or less.
上記、不純物を高濃度に含む紫外線透過用石英ガラスは
不純物に起因する性能的な劣化現象が派生する。The above-mentioned quartz glass for transmitting ultraviolet rays containing a high concentration of impurities suffers from performance deterioration caused by the impurities.
即ち、Ｎａ、に、Ａ１、Ｆｅ 、、Ｔｉ 、Ｎｉおよび
Ｃｕの濃度の総和が０．２ ｐｐｍ以上である石英ガラ
スにおいては上記不純物が、石英ガラスの紫外線エネル
ギー吸収に係わり、紫外線エネルギーの吸収とともに、
着色中心あるいは着色物質成長核の形成過程に何らかの
関与をし、石英ガラスが変電なる紫外線の長時間反復照
射によって着色し、透過率を下げるという性能的な劣化
現象が起こることを究明した。That is, in silica glass in which the total concentration of Na, Al, Fe, Ti, Ni, and Cu is 0.2 ppm or more, the above impurities are involved in the absorption of ultraviolet energy by the quartz glass, and together with the absorption of ultraviolet energy. ,
We have discovered that there is some involvement in the formation process of colored centers or colored substance growth nuclei, and that quartz glass becomes colored by repeated long-term irradiation with ultraviolet light (transformation), resulting in a performance deterioration phenomenon in which the transmittance decreases.
また、上記不純物に起因する劣化現象以外にも、石英ガ
ラスの主成分であるシリカに固有に含まれる酸素欠陥に
電子が捕獲されて着色中心を形成し石英ガラスが着色す
る現象も問題視される。In addition to the deterioration phenomena caused by the impurities mentioned above, the phenomenon in which electrons are captured by the oxygen defects inherent in silica, the main component of silica glass, and forms colored centers, causing the silica glass to become colored, is also seen as a problem. .
上記、ソーラリゼーションの発生機構は解明されていな
い点も多々あるが、石英ガラス中に含まれるＡ１、Ｆｅ
、Ｎａ等の不純物に起因するものと酸素欠乏点等の石
英ガラス自体の構造欠陥に起因するものとに大別して本
発明が推進された。Although there are many aspects of the solarization generation mechanism described above that have not been elucidated,
The present invention has been developed based on two types: those caused by impurities such as , Na, etc., and those caused by structural defects of the quartz glass itself, such as oxygen deficiency points.
紫外線照射により発生した電子またはホールがこれらの
不純物または欠陥に捕獲されたり、または直接紫外線を
吸収して、励起されたりして着色中心を形成するのがソ
ーラリゼーションの原因の一つであることが明らかにな
っている。One of the causes of solarization is that electrons or holes generated by ultraviolet irradiation are captured by these impurities or defects, or are excited by directly absorbing ultraviolet rays, forming colored centers. has become clear.
上記着色中心は、吸収スペクトルの形等から同定するこ
とができる。The colored center can be identified from the shape of the absorption spectrum.
即ち、石英ガラス中のＡｌ不純物にホールが捕獲された
着色中心はＡｅＶ付近に極大を持つ幅広い吸収ピークを
生じ、酸素欠陥に電子が捕獲された着色中心は５ｅＶ、
および５．７ｅＶの位置に吸収スペクトルを示す。That is, colored centers where holes are captured by Al impurities in quartz glass produce a broad absorption peak with a maximum around AeV, and colored centers where electrons are captured by oxygen defects produce a broad absorption peak of 5 eV,
It shows an absorption spectrum at a position of 5.7 eV and 5.7 eV.
不純物に起因するソーラリゼーションは各不純物濃度を
１１１１ｐＩＩ＋以下に抑えれば低減可能で、構造欠陥
によるソーラリゼーションに対しては石英ガラスの製造
方法の改良等が試みられてきたが欠陥の低減が困難で、
有効なソーラリゼーションに対する対策は無かった。Solarization caused by impurities can be reduced by keeping the concentration of each impurity below 1111pII+. Attempts have been made to improve the manufacturing method of silica glass to combat solarization caused by structural defects, but it has been difficult to reduce defects. difficult,
There were no effective measures against solarization.
Ｃ問題点を解決するための手段〕
本発明では上記問題点を解決するために、精製した高純
度の石英ガラス原料を使用し、厳密に不純物を排除した
雰囲気で石英ガラスを製造することにより、極小量に不
純物濃度を抑制した紫外線透過用石英ガラスを開発した
。Means for Solving Problem C] In the present invention, in order to solve the above problems, quartz glass is manufactured using purified high-purity quartz glass raw materials in an atmosphere strictly excluding impurities. We have developed quartz glass for transmitting ultraviolet rays with an extremely low impurity concentration.
上記本発明の紫外線透過用石英ガラスは、不純物を極小
に抑えたことにより、従来の石英ガラスが紫外線の長時
間反復照射とともに、不可避的に経時変化し、着色劣化
した透過率を補正するために、正確な光量確認を常時モ
ニターし、石英ガラスを新品と定期的に交換しなければ
ならなかった煩雑さを解消することができる。The above-mentioned quartz glass for transmitting ultraviolet rays of the present invention has impurities kept to a minimum, thereby correcting the transmittance of conventional quartz glass, which inevitably changes over time and deteriorates in color due to long-term repeated irradiation with ultraviolet rays. , it is possible to constantly monitor the accurate amount of light and eliminate the hassle of having to periodically replace the quartz glass with a new one.
また本発明の紫外線透過用石英ガラスは、Ａｌ、■、Ｆ
ｅ ％ Ｎａ ％ Ｋ％ Ｔｉ ｓ Ｎｉ ｓＣｕの各
濃度を０．１ ｐｐｍ以下とすることにより、これら不
純物に起因するソーラリゼーシッンは勿論のこと、構造
欠陥に起因するソーラリゼーションも、不純物濃度制限
の製造過程をもってその構造欠陥の発生を抑制し、これ
を因子とする透過率の低下を抑制し得る。Further, the quartz glass for transmitting ultraviolet rays of the present invention includes Al, ■, F
By setting each concentration of e % Na % K % Ti s Ni s Cu to 0.1 ppm or less, not only solarization caused by these impurities but also solarization caused by structural defects can be reduced by impurities. By using a concentration-limited manufacturing process, it is possible to suppress the occurrence of structural defects and to suppress the decrease in transmittance caused by these defects.
更に、Ｎ ａ ｓ Ｋ ＳＡ ｌ １Ｆ ｅ ｓ Ｔ
１％ Ｎ ｉおよびＣｕの濃度の総和を０．２ ｐｐｍ
以下にすることにより、より以上に本発明の効果を確実
なものとすることができる。Furthermore, N a s K S A l 1 F e s T
The total concentration of 1% Ni and Cu is 0.2 ppm
By doing the following, the effects of the present invention can be further ensured.
５ｉＣＡ、を酸水素炎中に導き、火炎法で加水分解させ
て得られるＳ ｉＯ２を、回転するターゲット上に積載
する通常の合成石英ガラスの製造法において、原料とし
ての５ｉ（Ｊ！、およびＳ ｉ０２を、充分に精製した
高純度のものを用い、石英ガラス溶融中の雰囲気を厳密
に清浄化して、表記の不純物濃度の石英ガラスを得る。5iCA, is introduced into an oxyhydrogen flame and hydrolyzed by a flame method, and the resulting SiO2 is loaded onto a rotating target. Using sufficiently refined i02 of high purity, the atmosphere during quartz glass melting is strictly cleaned to obtain quartz glass having the impurity concentration indicated.
上記方法で得られた、水酸基濃度１３００ｐｐｍ程度、
塩素濃度２００ｐｐｍ程度の石英ガラス（３）を３０φ
×３Ｉｎ厚の形状に研磨し、第１図に示す弗化マグネシ
ウムの窓を持つ３０Ｗの重水素ランプ（１）を用いて真
空中（２）で５ｅＶの紫外線を５００時間に渡って照射
し、照射前後の吸収スペクトルの差により透過率の変化
を分光光度計で測定した。A hydroxyl group concentration of about 1300 ppm obtained by the above method,
30φ quartz glass (3) with a chlorine concentration of about 200 ppm
It was polished into a shape with a thickness of 3 In and irradiated with 5 eV ultraviolet rays for 500 hours in a vacuum (2) using a 30 W deuterium lamp (1) with a magnesium fluoride window shown in Figure 1. Changes in transmittance were measured using a spectrophotometer based on the difference in absorption spectra before and after irradiation.
尚、５ｅＶの紫外線は、石英ガラス（３）中の酸素欠陥
に起因する着色中心を派生する波長に相当するので、前
記不純物による透過率の変化とともに、酸素欠陥に起因
する透過率の変化も同時に測定し得る。Note that 5 eV of ultraviolet rays corresponds to the wavelength at which coloring centers due to oxygen defects in the quartz glass (3) are derived, so that the change in transmittance due to the impurities and the change in transmittance due to oxygen defects occur at the same time. Can be measured.
第２図は不純物濃度の異なる石英ガラスに、紫外線エネ
ルギーを変化させて照射した場合の吸光係数の変化を示
す。FIG. 2 shows changes in extinction coefficient when quartz glass with different impurity concentrations is irradiated with varying amounts of ultraviolet energy.
図中の曲線１１は、／ｌとＮａの各々が１ ｐｐｍを越
える濃度で含まれる試料、１２は同じ不純物をそれぞれ
０．２ｐｐｆｆ＋含む試料である。Curve 11 in the figure is a sample containing /l and Na at a concentration exceeding 1 ppm, and curve 12 is a sample containing 0.2 ppff+ of each of the same impurities.
１３はＮａとＡＩとがそれぞれ０．０５およびＯ０Ｑ３
ｐｐｍ、上述の他の不純物が９．０１ ｐｐｍ以下であ
る本発明の紫外ｙｃ透過用石英ガラスである。13 has Na and AI of 0.05 and O0Q3, respectively.
The quartz glass for ultraviolet yc transmission of the present invention has a content of 9.01 ppm or less of the above-mentioned other impurities.
２００時間の紫外線照射によって試料１１は、／ｌとＮ
ａが共存する場合に特有な吸収スペクトルを示し、試料
１２は酸素欠陥に特有の吸収スペクトルを示す。After 200 hours of ultraviolet irradiation, sample 11 changed to /l and N
When a coexists, sample 12 exhibits a characteristic absorption spectrum, and sample 12 exhibits an absorption spectrum characteristic of oxygen vacancies.
これに対し、試料１３は２００時間の紫外線照射程度で
は吸収を生じない。On the other hand, sample 13 does not exhibit absorption even after being irradiated with ultraviolet light for about 200 hours.
不純物濃度を変化させた場合の透過率への影響を調べる
ため、実施例としての表１、および比較例としての表２
のような各種石英ガラスを作製し、１０００時間にわた
って紫外線を照射した後、５ｅＶにおける吸光係数の変
化を調査した。In order to investigate the effect on transmittance when changing the impurity concentration, Table 1 as an example and Table 2 as a comparative example
Various types of quartz glass were prepared, and after irradiating them with ultraviolet rays for 1000 hours, changes in extinction coefficient at 5 eV were investigated.
表１に示されるようにＡ ｌ ％ Ｆ ｅ 、Ｎａ ％
Ｋ −。Al % Fe, Na % as shown in Table 1
K-.
Ｔｉ 、Ｎｉ 、Ｃｕの濃度が０．１ ｐｐｍになると
効果が顕著になる。The effect becomes significant when the concentration of Ti, Ni, and Cu reaches 0.1 ppm.
上記試験結果の紫外線照射時間の条件は、１０００時間
照射してもソーラリゼーションが起こらない試料は、更
に照射をつづけた場合でも、かなりの間、その効果が持
続するであろうとの意味合いを持つ。
（以下余白）表１
表２
上記表１において＊欄はＮａ＝Ｃｕの不純物の総和（ｐ
ｐｍ ）を示す。The UV irradiation time conditions in the above test results imply that for samples that do not undergo solarization even after 1000 hours of irradiation, the effect will continue for a considerable period of time even if irradiation is continued. .
(Margins below) Table 1 Table 2 In Table 1 above, the * column is the sum of Na=Cu impurities (p
pm).
また、−印は、その元素が検出できなかったことを示す
。Moreover, a - mark indicates that the element could not be detected.
上記表２において市本欄はＮａ −、Ｋ 、ＡＩ、Ｆｅ
以外のＴｉｓ ＮｉｓおよびＣｕの不純物濃度の和（ｐ
ｐｍ ）を示す。In Table 2 above, the Ichimoto column is Na −, K, AI, Fe.
The sum of impurity concentrations of Nis and Cu other than Tis (p
pm).
また、＊宰＊欄は全不純物濃度の総和（ｐｐｍ ）を示
す。In addition, the column ** indicates the sum total (ppm) of all impurity concentrations.
更に、−印は、その元素が検出できなかったことを示す
。Furthermore, a minus sign indicates that the element could not be detected.
高品位被膜を得るために使用するＣＶＤ装置の場合、そ
の反応容器内に紫外線を導入する光ＣＶＤ法はシリコン
等の高品位の膜を低温で形成し得るので極めて有用な手
法であるが、その紫外線導入用の窓材として本発明の紫
外線透過用石英ガラスを用いれば、透過率の経時変化が
極めて少ないので、同一品質の膜が再現性良く生産でき
る。In the case of CVD equipment used to obtain high-quality films, the photo-CVD method that introduces ultraviolet rays into the reaction vessel is an extremely useful method because it can form high-quality films of silicon and other materials at low temperatures. If the quartz glass for transmitting ultraviolet rays of the present invention is used as a window material for introducing ultraviolet rays, the change in transmittance over time is extremely small, so that films of the same quality can be produced with good reproducibility.
また、半導体産業で使用されるエキシマレーザ露光機、
および塩素等を含む雰囲気中に半導体ウェハー等を静置
し、その表面に紫外線を照射してその受光部を活性化し
てエツチング等を行う光エツチング法の紫外線導入用窓
材として、本発明の紫外線透過用石英ガラスを用いれば
、条件の設定が容易で安定するので高精度の大量加工が
可能となる。Also, excimer laser exposure machines used in the semiconductor industry,
The ultraviolet rays of the present invention can be used as a window material for introducing ultraviolet rays in a photo-etching method, in which a semiconductor wafer, etc. is left standing in an atmosphere containing chlorine, etc., and its surface is irradiated with ultraviolet rays to activate its light-receiving area and perform etching. If transparent quartz glass is used, conditions can be easily set and stabilized, making it possible to perform high-precision mass processing.
更に、水銀ランプ、キセノンランプ、水素ランプ等、紫
外線光源用ランプの管や窓材として本発明の紫外線透過
用石英ガラスを用いれば、着色による光量の経時変化と
いう光源用ランプに致命的な現象を回避し得る。Furthermore, if the ultraviolet ray transmitting quartz glass of the present invention is used as tube or window material for ultraviolet light source lamps such as mercury lamps, xenon lamps, hydrogen lamps, etc., the phenomenon of light intensity change over time due to coloring, which is fatal to light source lamps, can be avoided. It can be avoided.
また、半導体パタニング用露光機のレンズ、フォトマス
ク、および紫外線を利用する化学産業分野、例えば紫外
線吸収スペクトル分析器の機材等に使用しても、光量の
経時変化を殆ど無視し得るので優れた性能の製品を量産
できる。In addition, even when used in the lenses of exposure machines for semiconductor patterning, photomasks, and in the chemical industry that uses ultraviolet rays, such as equipment for ultraviolet absorption spectrum analyzers, it has excellent performance because changes in the amount of light over time can be almost ignored. products can be mass produced.
更に、医学分野においても同様の貢献が期待できる。Furthermore, similar contributions can be expected in the medical field.
第１図は本発明の紫外線透過用石英ガラスのソーラリゼ
ーション評価に用いた装置の概略図であり、第２図は各
不純物濃度における紫外線照射後の石英ガラスの吸収ス
ペクトルを示す。
（１）重水素ランプ
（１１） Ａ７！とＮａの各々が１ ｐＩ）Ｉｌｌを越
える濃度で含まれている試料
（１２）Ａｉ！とＮａの各々を０．２ ｐｐｍ含む試料
（１，３）ＮａとＡＩとがそれぞれ０．０５および０、
Ｏ３ｐｐｍ、上述の他の不純物が０．０１ ｐｐｍ以下
である試料
（２）真空容器
（３）石英ガラス試料
第１図FIG. 1 is a schematic diagram of an apparatus used for solarization evaluation of the ultraviolet-transmitting quartz glass of the present invention, and FIG. 2 shows the absorption spectrum of the quartz glass after ultraviolet irradiation at various impurity concentrations. (1) Deuterium lamp (11) A7! and Na at concentrations exceeding 1 pI) Ill (12) Ai! Sample (1, 3) containing 0.2 ppm of Na and 0.05 and 0 of Na and AI, respectively.
Sample with O3ppm and other impurities mentioned above below 0.01ppm (2) Vacuum container (3) Quartz glass sample Figure 1
Claims (1)
濃度が０．１ｐｐｍ以下であり、前記７元素の濃度の総
和が０．２ｐｐｍ以下である高純度シリカよりなること
を特徴とする紫外線透過用石英ガラス。1. It is characterized by being made of high-purity silica in which each concentration of Na, K, Al, Fe, Ti, Ni, and Cu is 0.1 ppm or less, and the total concentration of the seven elements is 0.2 ppm or less. Quartz glass for transmitting ultraviolet rays.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13583489A JP2699107B2 (en) | 1989-05-31 | 1989-05-31 | Quartz glass for UV transmission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13583489A JP2699107B2 (en) | 1989-05-31 | 1989-05-31 | Quartz glass for UV transmission |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH035339A true JPH035339A (en) | 1991-01-11 |
| JP2699107B2 JP2699107B2 (en) | 1998-01-19 |
Family
ID=15160864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13583489A Expired - Lifetime JP2699107B2 (en) | 1989-05-31 | 1989-05-31 | Quartz glass for UV transmission |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2699107B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08166159A (en) * | 1994-12-13 | 1996-06-25 | Seiki Suyama | Ventilation fan control system |
| JP2001328807A (en) * | 2000-03-17 | 2001-11-27 | Mitsubishi Materials Corp | Method of purifying quartz powder and product made of quartz powder |
| DE112020001744T5 (en) | 2019-04-05 | 2021-12-23 | Heraeus Quarzglas Gmbh & Co. Kg | Titanium-containing quartz glass with excellent UV absorption and process for its manufacture |
-
1989
- 1989-05-31 JP JP13583489A patent/JP2699107B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08166159A (en) * | 1994-12-13 | 1996-06-25 | Seiki Suyama | Ventilation fan control system |
| JP2001328807A (en) * | 2000-03-17 | 2001-11-27 | Mitsubishi Materials Corp | Method of purifying quartz powder and product made of quartz powder |
| JP4557441B2 (en) * | 2000-03-17 | 2010-10-06 | ジャパンスーパークォーツ株式会社 | Method and apparatus for refining quartz powder and quartz glass product |
| DE112020001744T5 (en) | 2019-04-05 | 2021-12-23 | Heraeus Quarzglas Gmbh & Co. Kg | Titanium-containing quartz glass with excellent UV absorption and process for its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2699107B2 (en) | 1998-01-19 |
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