JPH035314A - Method for synthesizing diamond powder - Google Patents
Method for synthesizing diamond powderInfo
- Publication number
- JPH035314A JPH035314A JP1135864A JP13586489A JPH035314A JP H035314 A JPH035314 A JP H035314A JP 1135864 A JP1135864 A JP 1135864A JP 13586489 A JP13586489 A JP 13586489A JP H035314 A JPH035314 A JP H035314A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- cooling body
- diamond
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 34
- 239000010432 diamond Substances 0.000 title claims abstract description 34
- 239000000843 powder Substances 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000002194 synthesizing effect Effects 0.000 title claims description 7
- 238000001816 cooling Methods 0.000 claims abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 16
- 230000001376 precipitating effect Effects 0.000 claims 1
- 239000011343 solid material Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 32
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052786 argon Inorganic materials 0.000 abstract description 7
- 239000007787 solid Substances 0.000 abstract description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 abstract description 3
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 35
- -1 ethylene, propylene Chemical group 0.000 description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000010439 graphite Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 238000004430 X-ray Raman scattering Methods 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 229910002090 carbon oxide Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- FXXACINHVKSMDR-UHFFFAOYSA-N acetyl bromide Chemical compound CC(Br)=O FXXACINHVKSMDR-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- NEHMKBQYUWJMIP-NJFSPNSNSA-N chloro(114C)methane Chemical compound [14CH3]Cl NEHMKBQYUWJMIP-NJFSPNSNSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- WNMCHLGCLIJKJO-UHFFFAOYSA-N cyclopropane;ethanol Chemical compound CCO.C1CC1 WNMCHLGCLIJKJO-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、研磨や研削用に加工するダイヤモンド焼結体
に用いられる純度の良いダイヤモンド粉末を効率的に製
造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for efficiently producing diamond powder of high purity used for diamond sintered bodies processed for polishing and grinding.
従来、気相法によるダイヤモンド粉末の合成方法として
は次の方法が知られている。Conventionally, the following method is known as a method for synthesizing diamond powder using a gas phase method.
(1) 特開昭63−158195に示されるように
有機化合物または炭素材を用い高温のプラズマ中に導入
し、分解または蒸発させてダイヤモンドを析出させる、
熱プラズマCVD法。(1) As shown in JP-A No. 63-158195, an organic compound or carbon material is introduced into a high-temperature plasma and decomposed or evaporated to precipitate diamond.
Thermal plasma CVD method.
(2)(特開昭63−156009)有機化合物、水素
及びダイヤモンド生成のための核を用い、核の上にダイ
ヤモンドを析出させる高周波またはマイクロ波プラズマ
CVD法。(2) (JP-A-63-156009) A high-frequency or microwave plasma CVD method that uses an organic compound, hydrogen, and a nucleus for producing diamond, and deposits diamond on the nucleus.
しかし、これらの方法には次のような欠点がある。すな
わち(1)の方法では、プラズマ尾炎の空間部に冷却用
ガスを吹き込むことにより、プラズマ中の活性種を含む
反応混合物を急冷しダイヤモンドを析出させるものであ
るために、プラズマ尾炎と冷却ガスが衝突しダイヤモン
ドが析出する領域や反応領域の温度コントロールが非常
に難しい。However, these methods have the following drawbacks. In other words, in method (1), cooling gas is injected into the space of the plasma tail flame to rapidly cool the reaction mixture containing active species in the plasma and precipitate diamond. It is extremely difficult to control the temperature in the reaction region and the region where gases collide and diamond precipitates.
そのため再現性が取りに<<、また反応領域内に温度分
布が生じ易いため非ダイヤモンド状炭素の混入が起こり
易い、ダイヤモンド生成の過飽和度が上げにくくダイヤ
モンド粉末の生成量に限界がある、といった欠点を持つ
。(2)の方法では、ダイヤモンドが析出し易くするた
めに核として異物質を入れるために、生成する粉末は核
としていれた異物質との複合粉末になってしまう。また
無電極型の高周波あるいはマイクロ波放電を用いるため
原料濃度に限界があり、ダイヤモンド粉末の生成量を上
げれないという欠点を持つ。As a result, reproducibility is poor, temperature distribution tends to occur in the reaction region, which makes it easy for non-diamond-like carbon to be mixed in, and it is difficult to increase the supersaturation degree of diamond formation, which limits the amount of diamond powder produced. have. In method (2), a foreign substance is added as a nucleus to facilitate the precipitation of diamond, and the resulting powder becomes a composite powder with the foreign substance that was used as a nucleus. Furthermore, since it uses electrodeless high frequency or microwave discharge, there is a limit to the concentration of raw materials, and it has the disadvantage that it is not possible to increase the amount of diamond powder produced.
そこで本発明の目的は、上記欠点を解消し純度の良いダ
イヤモンド粉末を高い生産性で合成する方法を提供する
ことにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for solving the above-mentioned drawbacks and synthesizing diamond powder of good purity with high productivity.
本発明者らは鋭意研究の結果冷却体を機械的または電気
的に運動させることにより純度の良いダイヤモンド粉末
の生産性が向上することを見いだし、本発明を完成する
に至った。すなわち本発明は、上記目的を達成するため
に減圧下、放電により発生したプラズマ中に炭素源を導
入し、このプラズマ炎を固体からなる冷却体に接触させ
急冷することによりダイヤモンドを生成させる方法であ
って、前記冷却体を機械的および/または電気的に運動
させる点に特徴がある。As a result of extensive research, the present inventors have discovered that the productivity of diamond powder with good purity can be improved by mechanically or electrically moving the cooling body, and have completed the present invention. That is, in order to achieve the above object, the present invention provides a method for producing diamond by introducing a carbon source into plasma generated by electric discharge under reduced pressure, and bringing this plasma flame into contact with a solid cooling body to rapidly cool it. The cooling body is characterized in that the cooling body is moved mechanically and/or electrically.
本発明で用いる放電は特に限定されず、例えば直流、高
周波、マイクロ波、低周波交流のいずれか、もしくはこ
れらの重畳したもの、あるいは磁場や電場を印加したも
のであってもよい。The discharge used in the present invention is not particularly limited, and may be, for example, any one of direct current, high frequency, microwave, low frequency alternating current, or a combination thereof, or the application of a magnetic field or electric field.
本発明でプラズマに使用するガスとしては、水素ガス及
びアルゴン、ヘリウム、ネオン、キセノン等の不活性ガ
ス、窒素、酸素ガスを単独もしくは二種類以上の混合ガ
スとして使用できる。これにアンモニア、二酸化炭素、
−酸化炭素等が共存してもかまわない。As the gas used for the plasma in the present invention, hydrogen gas, inert gases such as argon, helium, neon, and xenon, nitrogen gas, and oxygen gas can be used alone or in a mixture of two or more gases. This includes ammonia, carbon dioxide,
- Carbon oxide etc. may coexist.
本研究で用いる炭素源は、プラズマ中で解離して炭素を
含むイオン種、ラジカル種等の活性種を生成するもので
有れば、気体、液体または固体のいずれであってもよい
。炭素源としては例えばメタン、エタン、プロパン等の
飽和炭化水素、エチレン、プロピレン、アセチレン等の
不飽和炭化水素、ベンゼン等の芳香属炭化水素、シクロ
ヘキサン、シクロプロパン等の脂環式炭化水素、エタノ
ール、プロパツール、tert−ブチルアルコール等の
アルコール類、ジメチルエーテル、ジエチルエーテル等
のエーテル類、ホルムアルデヒド、アセトアルデヒド等
のアルデヒド類、アセトン等のケトン類、塩化メチル、
臭化アセチル等のハロゲン化物、ギ酸、酢酸、シュウ酸
、マロン酸、等のカルボン酸、ギ酸メチル、ギ酸エステ
ル等のエステル類、酢酸アミド等の酸アミド類、メチル
アミン、トリメチルアミン等のアミン類、ポリエチレン
、ボロプロピレン等の高分子化合物、チオフェン等のイ
オウを含む有機化合物、ホスフィン等のリンを含む有機
化合物、−酸化炭素、二酸化炭素、黒鉛等が挙げられる
。The carbon source used in this study may be gas, liquid, or solid as long as it dissociates in plasma to generate active species such as carbon-containing ionic species and radical species. Examples of carbon sources include saturated hydrocarbons such as methane, ethane, and propane; unsaturated hydrocarbons such as ethylene, propylene, and acetylene; aromatic hydrocarbons such as benzene; alicyclic hydrocarbons such as cyclohexane and cyclopropane; ethanol; Alcohols such as propatool, tert-butyl alcohol, ethers such as dimethyl ether and diethyl ether, aldehydes such as formaldehyde and acetaldehyde, ketones such as acetone, methyl chloride,
Halides such as acetyl bromide, carboxylic acids such as formic acid, acetic acid, oxalic acid, malonic acid, esters such as methyl formate and formate esters, acid amides such as acetate amide, amines such as methylamine and trimethylamine, Examples include polymer compounds such as polyethylene and boropropylene, organic compounds containing sulfur such as thiophene, organic compounds containing phosphorus such as phosphine, carbon oxide, carbon dioxide, and graphite.
これらの炭素源となる物質は、一種類または二種類以上
の混合物であってもよい、炭素源が液体または固体の場
合にはアルゴン、ヘリウム等の不活性ガスもしくは水素
ガスをキャリアーガスとしてプラズマ中に供給する。These carbon source substances may be one type or a mixture of two or more types. When the carbon source is liquid or solid, it is used in the plasma using an inert gas such as argon or helium or hydrogen gas as a carrier gas. supply to.
本発明の方法においては、炭素源のプラズマ中での反応
は水素の存在下で行われるが、この水素ガスは、プラズ
マ発生用のガスとして反応系に導入されてもよいし、あ
るいはシースガス、キャリアーガス等として導入されて
もよい。また炭素源のプラズマへの導入方法に関しても
なんら制限されるものではない。In the method of the present invention, the reaction of the carbon source in the plasma is carried out in the presence of hydrogen, but this hydrogen gas may be introduced into the reaction system as a gas for plasma generation, or as a sheath gas or carrier. It may also be introduced as a gas or the like. Furthermore, there are no restrictions on the method of introducing the carbon source into the plasma.
本発明の方法においては、反応系に導入される水素ガス
と炭素源の量比は、炭素源中の炭素原子数/水素原子数
の比率が0.0001〜10となる範囲が好ましい。こ
の比率が大きすぎると黒鉛が析出し易−くなり、低すぎ
るとダイヤモンドの生成が余りにも少ない。In the method of the present invention, the quantitative ratio of the hydrogen gas introduced into the reaction system to the carbon source is preferably such that the ratio of the number of carbon atoms/the number of hydrogen atoms in the carbon source is 0.0001 to 10. If this ratio is too large, graphite tends to precipitate, and if this ratio is too low, too little diamond is produced.
本発明において冷却体を機械的および/または電気的に
運動させる方法としては、外部モータにより冷却を回転
させる方法及び超音波振動子、電磁石、モーター等を用
いて冷却体を振動させる方法がある。回転速度としては
1〜20000 rpmの範囲がよい。それより遅いと
回転させる効果がなくなり、それより回転が速くなると
、冷却体表面でのガスの乱れが大きくなり冷却効果がな
くなり、逆にダイヤモンドの析出速度が遅(なるととも
に、装置コストが高くなる。与える振動としては、0.
01Hz以上が好ましい。それ以下では振動させる効果
がなくなる。In the present invention, methods for mechanically and/or electrically moving the cooling body include a method of rotating the cooling body with an external motor, and a method of vibrating the cooling body using an ultrasonic vibrator, an electromagnet, a motor, etc. The rotation speed is preferably in the range of 1 to 20,000 rpm. If it is slower than that, there will be no effect of rotating it, and if it is faster than that, the gas turbulence on the surface of the cooling body will become large and the cooling effect will be lost, and on the contrary, the diamond precipitation rate will be slow (and the equipment cost will increase). .The vibration given is 0.
The frequency is preferably 0.01 Hz or higher. Below that, the vibrating effect is lost.
本発明で用いられる反応圧力は、0.1〜600tor
rの範囲、好ましくは10〜400 torrめ範囲が
よい。Q、 l torrより低い圧力ではダイヤモン
ドの析出は極めて遅く、600 torrより高い圧力
ではガス温度が高くなり黒鉛あるいは無定型炭素が混入
し易くなる。The reaction pressure used in the present invention is 0.1 to 600 torr.
The range of r is preferably 10 to 400 torr. At a pressure lower than Q, l torr, diamond precipitation is extremely slow, and at a pressure higher than 600 torr, the gas temperature becomes high and graphite or amorphous carbon tends to be mixed in.
本発明で用いられる冷却体の材質としては、周期律表m
a〜■、Ib〜IVbに属する単体あるいはこれらの化
合物が挙げられる。例えば綱、タングステン、モリブデ
ン、シリコン、タンタル、黒鉛等の単体、ステンレス、
石英ガラス、アルミナ、炭化珪素、窒化珪素、炭化ホウ
素、窒化ホウ素、窒化アルミニウム等の化合物が挙げら
れる。この冷却体は、水等の冷媒で冷却され、冷却体の
表面温度は400〜1400℃であるようにする。The material of the cooling body used in the present invention is m in the periodic table.
Examples include simple substances or compounds belonging to groups a to ■, Ib to IVb. For example, steel, tungsten, molybdenum, silicon, tantalum, graphite, etc., stainless steel,
Examples include compounds such as quartz glass, alumina, silicon carbide, silicon nitride, boron carbide, boron nitride, and aluminum nitride. This cooling body is cooled with a refrigerant such as water, and the surface temperature of the cooling body is set to be 400 to 1400°C.
本発明の実施方法について概略図を用いて説明する。第
1図に直流放電を用いてダイヤモンド粉末を合成する装
置を示す。第2図に高周波放電を用いてダイヤモンド粉
末を合成する装置を示す。A method of implementing the present invention will be explained using schematic diagrams. FIG. 1 shows an apparatus for synthesizing diamond powder using direct current discharge. Figure 2 shows an apparatus for synthesizing diamond powder using high frequency discharge.
第1図において、1は直流プラズマトーチ、2は直流電
源、3は水冷反応容器、4は上下動及び回転可能な冷却
用の冷却体、5は水冷光は皿、6はプラズマ発生ガス導
入口、7は原料ガス導入口、8はシースガス(水冷反応
容器内壁に沿って螺旋状に流すガス)導入口、9はガス
供給装置、10は反応容器内の圧力調製機能を持った真
空排気装置を示す。In Fig. 1, 1 is a DC plasma torch, 2 is a DC power source, 3 is a water-cooled reaction vessel, 4 is a vertically movable and rotatable cooling body, 5 is a water-cooled light plate, and 6 is a plasma generation gas inlet. , 7 is a raw material gas inlet, 8 is a sheath gas (gas flowing spirally along the inner wall of the water-cooled reaction vessel) inlet, 9 is a gas supply device, and 10 is a vacuum exhaust device with a pressure adjustment function inside the reaction vessel. show.
反応に際しては反応容器内を0.01 torr以上の
真空度まで真空引きした後、プラズマ発生ガス導入口6
よりアルゴンを流し、放電させてプラズマを発生し、プ
ラズマが安定した後、導入口8よりシースガス、この場
合雰囲気調製ガス及び反応ガスとして水素または不活性
ガスと水素ガスの混合ガスを流す。4の冷却体及び水冷
光は皿5を所定位置(表面温度が400から1400℃
に成る位置)に設置した後、10の排気装置により反応
容器内を所定圧に調製し、4の冷却体を回転させる。During the reaction, after evacuating the inside of the reaction vessel to a vacuum level of 0.01 torr or more, the plasma generating gas inlet 6 is opened.
After the plasma is stabilized, a sheath gas, in this case an atmosphere conditioning gas and a reaction gas, hydrogen or a mixture of an inert gas and hydrogen gas, is flowed through the inlet 8. The cooling body 4 and the water cooling light are used to place the plate 5 in a predetermined position (with a surface temperature of 400 to 1400°C).
After the reactor is installed at a position of 10, the inside of the reaction vessel is adjusted to a predetermined pressure using the exhaust device 10, and the cooling body 4 is rotated.
次に、炭素源を導入ロアより導入し、プラズマ中で分解
または励起し活性種を生成させることにより、ダイヤモ
ンド粉末が析出し、水冷反応容器内壁3及び水冷光は皿
5に堆積する。Next, a carbon source is introduced from the introduction lower and is decomposed or excited in the plasma to generate active species, whereby diamond powder is precipitated and deposited on the inner wall 3 of the water-cooled reaction vessel and the water-cooled light on the dish 5.
第2図において、11は振動装置、12は高周波発生用
ワークコイル、13は高周波電源であり、その他は第1
図と同じである。反応に際しては、直流放電の場合と同
様に、反応容器内を0.01torr以上の真空度まで
真空引きした後、プラズマ発生ガス導入口6及びシース
ガス導入口8よりアルゴンを流し、放電させてプラズマ
を発生し、プラズマが安定した後、シースガス導入口8
より雰囲気調製ガス及び反応ガスとしてさらに水素ガス
を流す。水冷光は皿5を所定位置に設置した後、10の
排気装置により反応容器内を所定圧に調製し、4の冷却
体を振動させる。次に、炭素源を導入ロアより導入し、
プラズマ中で分解または励起し活性種を生成させること
により、ダイヤモンド粉末が析出し、水冷反応容器内壁
3及び水冷光は皿5に堆積する。In Fig. 2, 11 is a vibration device, 12 is a work coil for high frequency generation, 13 is a high frequency power source, and the others are the first
Same as the figure. During the reaction, as in the case of direct current discharge, after evacuating the inside of the reaction vessel to a vacuum level of 0.01 torr or more, argon is flowed through the plasma generating gas inlet 6 and the sheath gas inlet 8 to cause discharge and generate plasma. After the plasma is generated and stabilized, the sheath gas inlet 8
Hydrogen gas is further supplied as an atmosphere conditioning gas and a reaction gas. After placing the dish 5 in a predetermined position, the water cooling light adjusts the inside of the reaction vessel to a predetermined pressure using an exhaust device 10, and vibrates the cooling body 4. Next, a carbon source is introduced through the introduction lower,
Diamond powder is precipitated by decomposition or excitation in the plasma to generate active species, and the diamond powder is deposited on the inner wall 3 of the water-cooled reaction vessel and the water-cooled light plate 5.
実施例1
第1図に示した装置を用い、反応容器内を0.01to
rrまで真空排気後、プラズマ発生用ガスとしてアルゴ
ン201/minを流して直流プラズマを発生させ、シ
ースガス導入口8より水素41/minを流した。つい
で反応容器内の圧力を50 torrに調製し、銅製の
冷却体を表面温度が約800°Cに成る位置まで上昇さ
せ、2500rpmで回転させた後、原料ガス導入口よ
りアセチレン0.41/minを流し、直流電源人力8
kwで1時間反応を行なった。なお表面温度は放射温度
計により測定した。Example 1 Using the apparatus shown in Fig. 1, the inside of the reaction vessel was 0.01 to
After evacuation to rr, argon was flowed at 201/min as a plasma generation gas to generate DC plasma, and hydrogen was flowed through the sheath gas inlet 8 at 41/min. Next, the pressure inside the reaction vessel was adjusted to 50 torr, the copper cooling body was raised to a position where the surface temperature was about 800°C, and after rotating at 2500 rpm, acetylene was injected at 0.41/min from the raw material gas inlet. DC power source 8
The reaction was carried out for 1 hour at kW. Note that the surface temperature was measured using a radiation thermometer.
その結果、水冷反応管内壁及び水冷光は皿より、約6g
の粉末が得られた。得られた粉末はX線回折及びラマン
散乱スペクトル測定結果より、立方晶ダイヤモンドであ
ることが解った。また走査電子顕微鏡(SEM)観察よ
り、得られた粉末は約0、3μmの球状粉末であること
が解った。As a result, the inner wall of the water-cooled reaction tube and the water-cooled light weighed about 6g from the dish.
of powder was obtained. The obtained powder was found to be cubic diamond from the results of X-ray diffraction and Raman scattering spectroscopy. Furthermore, observation using a scanning electron microscope (SEM) revealed that the obtained powder was a spherical powder with a diameter of about 0.3 μm.
実施例2
図2に示した装置を用い、反応容器内を0.01tor
rまで真空引き後、プラズマ発生用ガス導入口6よりア
ルゴンを181/min及びシースガス導入口8よりア
ルゴンガスを301/min流して高周波プラズマを発
生させた。ついでシースガスに水素1017m1nを添
加し、反応容器内の圧力を300 torrに調製した
。プラズマ安定化後、タングステン製冷却体を表面温度
が約900℃になる位置に設置し、振動周波数26GH
z、定格出力300Wの超音波振動子により振動させた
。さらに原料ガス導入ロアよりメタン71/minを流
し、高周波電源人力30kwで1時間反応を行なった。Example 2 Using the apparatus shown in Figure 2, the inside of the reaction vessel was heated to 0.01 torr.
After evacuation to r, argon gas was flowed at 181/min through the plasma generation gas inlet 6 and argon gas was flowed through the sheath gas inlet 8 at 301/min to generate high frequency plasma. Next, 1017 ml of hydrogen was added to the sheath gas, and the pressure inside the reaction vessel was adjusted to 300 torr. After stabilizing the plasma, the tungsten cooling body was installed at a position where the surface temperature was approximately 900℃, and the vibration frequency was set to 26GH.
z, it was vibrated by an ultrasonic vibrator with a rated output of 300W. Furthermore, methane was flowed at 71/min from the raw material gas introduction lower, and reaction was carried out for 1 hour using a high-frequency power source with manual power of 30 kW.
その結果、水冷反応管内壁及び水冷光は皿より、約8g
の粉末が得られた。得られた粉末は>1回折及びラマン
散乱スペクトル測定結果より、立方晶ダイヤモンドであ
ることが解った。またSEM観察より、得られた粉末は
約0.2μmの球状粉末であることが解った。As a result, the inner wall of the water-cooled reaction tube and the water-cooled light weighed approximately 8 g from the dish.
of powder was obtained. The obtained powder was found to be cubic diamond based on >1 diffraction and Raman scattering spectrum measurements. Furthermore, SEM observation revealed that the obtained powder was a spherical powder with a diameter of about 0.2 μm.
比較例1
実施例1の装置を用い、冷却体を回転させないで、それ
以外の条件は実施例と同様にして反応を1時間行なった
ところ、水冷反応管内壁及び水冷光は皿より約3gの粉
末を得た。X線回折およびラマン散乱スペクトル、SE
Mより約0.3μmの立方晶ダイヤモンド粉末であるこ
とが解った。Comparative Example 1 Using the apparatus of Example 1, the reaction was carried out for 1 hour under the same conditions as in Example without rotating the cooling body. When the inner wall of the water-cooled reaction tube and the water-cooled light were A powder was obtained. X-ray diffraction and Raman scattering spectra, SE
It was found that it was cubic diamond powder with a diameter of about 0.3 μm.
比較例2
実施例2の装置を用い、冷却体を振動させずにそれ以外
の条件は実施例2と同様にして反応を1時間行なったと
ころ、水冷反応管内壁及び水冷光は皿より約4gの粉末
を得た。X線回折およびラマン散乱スペクトル、SEM
より約0.2μmの立方晶ダイヤモンド粉末であること
が解った。Comparative Example 2 Using the apparatus of Example 2, the reaction was carried out for 1 hour under the same conditions as Example 2 without vibrating the cooling body, and the inner wall of the water-cooled reaction tube and the water-cooled light were approximately 4 g powder was obtained. X-ray diffraction and Raman scattering spectra, SEM
It was found that the powder was cubic diamond powder with a diameter of about 0.2 μm.
本発明によれば、純度の良いダイヤモンド粉末を効率よ
く高い生産性で合成することが出来る。According to the present invention, diamond powder with good purity can be synthesized efficiently and with high productivity.
第1図は直流放電、第2図は高周波放電をそれぞれ用い
てダイヤモンド粉末を合成する装置の縦断面図を示す。
1・・・直流プラズマトーチ、2・・・直流電源、3・
・・水冷反応容器、4・・・冷却体、5・・・水冷光は
皿、6・・・プラズマ発生ガス導入口、7・・・原料ガ
ス導入口、8・・・シースガス導入口、9・・・ガス供
給装置、10・・・真空排気装置、II・・・振動装置
、12・・・ワークコイル、13・・・高周波電源。
第1図FIG. 1 shows a longitudinal cross-sectional view of an apparatus for synthesizing diamond powder using a direct current discharge and FIG. 2 a high-frequency discharge. 1... DC plasma torch, 2... DC power supply, 3...
... Water-cooled reaction vessel, 4... Cooling body, 5... Water-cooled light plate, 6... Plasma generation gas inlet, 7... Raw material gas inlet, 8... Sheath gas inlet, 9 ... Gas supply device, 10... Vacuum exhaust device, II... Vibration device, 12... Work coil, 13... High frequency power supply. Figure 1
Claims (1)
し、このプラズマ炎を固体からなる冷却体に接触させて
急冷することによりダイヤモンド粉末を析出させる方法
であって、前記冷却体を機械的および/または電気的に
運動させることを特徴とするダイヤモンド粉末の合成方
法。A method of precipitating diamond powder by introducing a carbon source into plasma generated by electric discharge under reduced pressure and rapidly cooling the plasma flame by bringing it into contact with a cooling body made of a solid material, the method comprising: A method for synthesizing diamond powder characterized by electrically moving the powder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1135864A JP2766668B2 (en) | 1989-05-31 | 1989-05-31 | Synthesis method without diamond powder |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1135864A JP2766668B2 (en) | 1989-05-31 | 1989-05-31 | Synthesis method without diamond powder |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH035314A true JPH035314A (en) | 1991-01-11 |
JP2766668B2 JP2766668B2 (en) | 1998-06-18 |
Family
ID=15161548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1135864A Expired - Fee Related JP2766668B2 (en) | 1989-05-31 | 1989-05-31 | Synthesis method without diamond powder |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2766668B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH067671A (en) * | 1992-06-29 | 1994-01-18 | Sansha Electric Mfg Co Ltd | Method for extracting transformed material by induction plasma spraying |
KR100411710B1 (en) * | 2001-06-28 | 2003-12-18 | 한국과학기술연구원 | Apparatus and method for the synthesis of the diamond with powder shape by chemical vapor deposition (cvd) method |
CN112372522A (en) * | 2020-11-17 | 2021-02-19 | 云南光电辅料有限公司 | Grinding wheel for thinning sapphire substrate and preparation method thereof |
-
1989
- 1989-05-31 JP JP1135864A patent/JP2766668B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH067671A (en) * | 1992-06-29 | 1994-01-18 | Sansha Electric Mfg Co Ltd | Method for extracting transformed material by induction plasma spraying |
KR100411710B1 (en) * | 2001-06-28 | 2003-12-18 | 한국과학기술연구원 | Apparatus and method for the synthesis of the diamond with powder shape by chemical vapor deposition (cvd) method |
CN112372522A (en) * | 2020-11-17 | 2021-02-19 | 云南光电辅料有限公司 | Grinding wheel for thinning sapphire substrate and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2766668B2 (en) | 1998-06-18 |
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