JPH01203297A - Method for synthesizing diamond with combustion flame - Google Patents
Method for synthesizing diamond with combustion flameInfo
- Publication number
- JPH01203297A JPH01203297A JP2813388A JP2813388A JPH01203297A JP H01203297 A JPH01203297 A JP H01203297A JP 2813388 A JP2813388 A JP 2813388A JP 2813388 A JP2813388 A JP 2813388A JP H01203297 A JPH01203297 A JP H01203297A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- diamond
- hydrogen
- substrate
- combustion flame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 30
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 29
- 238000002485 combustion reaction Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 25
- 230000002194 synthesizing effect Effects 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000001257 hydrogen Substances 0.000 claims abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000003575 carbonaceous material Substances 0.000 claims abstract description 13
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 10
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 25
- 150000002894 organic compounds Chemical class 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 238000001704 evaporation Methods 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 4
- 239000011733 molybdenum Substances 0.000 abstract description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000354 decomposition reaction Methods 0.000 abstract description 3
- 238000010494 dissociation reaction Methods 0.000 abstract description 3
- 230000005593 dissociations Effects 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 3
- 229910002804 graphite Inorganic materials 0.000 abstract description 3
- 239000010439 graphite Substances 0.000 abstract description 3
- 239000012808 vapor phase Substances 0.000 abstract description 3
- 239000001294 propane Substances 0.000 abstract description 2
- 239000003570 air Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000112 cooling gas Substances 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- -1 carbon ions Chemical class 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000004430 X-ray Raman scattering Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は燃焼炎によるダイヤモンドの合成法に関する。[Detailed description of the invention] Industrial applications The present invention relates to a method for synthesizing diamond using a combustion flame.
従来技術
従来、高温高圧を用いない気相合成法によるダイヤモン
ドの合成法としては次のような方法が知られている。Prior Art Conventionally, the following method is known as a method for synthesizing diamond by a vapor phase synthesis method that does not use high temperature and high pressure.
（１）放電により炭素イオンあるいは炭化水素イオンを
作り、これを電位勾配によって加速し基板上に衝突させ
てダイヤモンドを析出させる所謂イオンビーム蒸着法、
イオンブレーティング法。(1) A so-called ion beam evaporation method in which carbon ions or hydrocarbon ions are created by electric discharge, accelerated by a potential gradient, and collided with a substrate to deposit diamond.
Ion brating method.
（２）プラズマ、熱、光を用いて炭化水素と水素の混合
ガスを活性化させて基板表面にダイヤモンドを析出させ
る所謂プラズマ法、熱タングステンフィラメント法、光
ＣＶＤ法、高周波熱プラズマ法、直流アーク法。などで
ある。(2) The so-called plasma method, which uses plasma, heat, and light to activate a mixed gas of hydrocarbon and hydrogen to deposit diamond on the substrate surface, thermal tungsten filament method, photoCVD method, high-frequency thermal plasma method, and direct current arc. Law. etc.
しかしながら、上記の方法の高周波熱プラズマ法及び直
流アーク法以外は、ダイヤモンド生成速度が０．１〜１
μｍ／ｈｒ、と遅いばかりでなく、得られる析出面積も
小さい。また装置も非常に高価である。高周波熱プラズ
マ法及び直流アーク法では、ダイヤモンド生成速度は数
μｍ／ｍｉｎと速いが、装置が極めて高価である問題点
がある。However, in the above methods other than the high frequency thermal plasma method and the DC arc method, the diamond production rate is 0.1 to 1.
Not only is it slow (μm/hr), but the resulting precipitation area is also small. The equipment is also very expensive. Although the high-frequency thermal plasma method and the DC arc method produce diamond at a high rate of several μm/min, they have the problem that the equipment is extremely expensive.
発明の目的
本発明は前記従来法における問題点を解決すべくなされ
たもので、その目的は簡単で安価な装置を用い、ダイヤ
モンドの生成速度が数μｍ／ｍｉｎと速いダイヤモンド
の合成法を提供するにある。Purpose of the Invention The present invention was made to solve the problems in the conventional methods, and its purpose is to provide a method for synthesizing diamonds that uses simple and inexpensive equipment and has a high diamond production rate of several μm/min. It is in.
発明の構成
本発明者は前記目的を達成すべく鋭意研究の結果、炭化
水素もしくは水素またはその混合ガスと酸素または空気
の燃焼によって得られる６００℃以上の高温燃焼炎中で
有機化合物または炭素材を分解・蒸発・解離させて炭素
を励起させ、これに炭素に対し５０倍容量以上の水素を
混合した気体を、６００ ”〜１２００℃に保持した基
板に当てるかあるいはその気体中でダイヤモンドを析出
させることに成功し、この方法によると０．１〜数μｓ
／ａ＋ｉｎの生成速度でダイヤモンドを合成し得られる
ことを知見し得た。この知見に基づいて本発明を完成し
た。Structure of the Invention As a result of intensive research to achieve the above object, the present inventor has developed a method for burning organic compounds or carbon materials in a high-temperature combustion flame of 600°C or higher obtained by combustion of hydrocarbons, hydrogen, or a mixed gas thereof and oxygen or air. Carbon is excited by decomposition, evaporation, and dissociation, and a gas mixed with hydrogen at least 50 times the volume of carbon is applied to a substrate held at 600'' to 1200°C, or diamond is precipitated in the gas. This method has been very successful in reducing the time from 0.1 to several μs.
It has been found that diamond can be synthesized at a production rate of /a+in. The present invention was completed based on this knowledge.
本発明の要旨は、
炭化水素、水素の単独または混合ガスと酸素ガスまたは
空気の６００℃以上の燃焼炎中で有機化合物または炭素
材を分解・蒸発・解離させて炭素を励起し、これにこの
炭素に対し５０倍容量以上の水素を混合した気体を６０
０°〜１２００℃に保持した基板に当てるかあるいはそ
の気相中でダイヤモンドを析出させることを特徴とする
ダイヤモンドの合成法、にある。The gist of the present invention is to excite carbon by decomposing, evaporating, and dissociating an organic compound or carbon material in a combustion flame of 600° C. or higher of hydrocarbon, hydrogen alone or a mixed gas, and oxygen gas or air. 60% of gas mixed with 50 times more hydrogen than carbon
A method for synthesizing diamond characterized by depositing diamond on a substrate held at 0° to 1200° C. or in its vapor phase.
本発明の方法における高温燃焼炎中で有機化合物または
炭素材を分解・蒸発・解離させる方法としては、高温燃
焼炎を発生させ、その中に有機化合物または炭素材を導
入してもよく、あるいは燃焼原料と同時に有機化合物ま
たは炭素材を導入してもよい。As a method for decomposing, evaporating, and dissociating organic compounds or carbon materials in a high-temperature combustion flame in the method of the present invention, a high-temperature combustion flame may be generated and the organic compound or carbon material may be introduced into it, or the organic compound or carbon material may be introduced into the flame. An organic compound or carbon material may be introduced simultaneously with the raw material.
本発明の高温燃焼炎を発生させるガスとしては、炭化水
素もしくは水素またはその混合ガスと酸素または空気が
用いられる。その燃焼炎温度は使用するガスの種類・濃
度とシースガス、冷却用ガス、例えば水素、不活性ガス
の単独またはこれらの混合ガスを導入することによって
調整し得られる。Hydrocarbons, hydrogen, or a mixed gas thereof, and oxygen or air are used as the gas for generating the high-temperature combustion flame of the present invention. The combustion flame temperature can be adjusted by introducing the type and concentration of the gas used, a sheath gas, a cooling gas such as hydrogen, an inert gas, or a mixture thereof.
燃焼炎の温度は６００″Ｃ以上であることが必要で、こ
の温度より低いと単原子の炭素が生成し得なく、ダイヤ
モンドを合成し得ない。The temperature of the combustion flame must be 600''C or higher; if the temperature is lower than this, monatomic carbon cannot be produced and diamond cannot be synthesized.
有機化合物としては、燃焼中で分解し、炭素を含むイオ
ン種、ラジカル種を生成し得るものであれば、気体、液
体、固体のいずれの形態でもよい。The organic compound may be in any form of gas, liquid, or solid as long as it can be decomposed during combustion and generate carbon-containing ionic species or radical species.
例えば、メタン、エタン、プロパン、ブタン、エチレン
、ベンゼン等の炭化水素、メタノール、エタノール、プ
ロパツール等のアルコール類、ホリエチレン、ポリプロ
ピレン等の高分子物質、油脂、ピリジン、チオフェンの
ような分子中に窒素、硫黄等を含むものであってもよい
。For example, hydrocarbons such as methane, ethane, propane, butane, ethylene and benzene, alcohols such as methanol, ethanol and propatool, polymeric substances such as polyethylene and polypropylene, oils and fats, molecules such as pyridine and thiophene. It may also contain nitrogen, sulfur, etc.
炭素材としては、例えば電極用黒鉛が挙げられる。Examples of the carbon material include graphite for electrodes.
励起された炭素雰囲気中に炭素に対し５０倍容量以上の
Ｈ！を導入、混合する。この水素は炭素の単原子を安定
化し、Ｓｐ ″の励起状態を保持する作用をする。水素
量が炭素に対し５０倍容量より少ないとグラファイトと
なるので、それ以上の量であることが必要である。しか
し、多過ぎると、水素が無駄になるので５０〜１００倍
容量程度であることが好ましい。In an excited carbon atmosphere, H! has a capacity more than 50 times that of carbon! Introduce and mix. This hydrogen stabilizes the single atom of carbon and functions to maintain the excited state of Sp''.If the amount of hydrogen is less than 50 times the capacity of carbon, it will become graphite, so it is necessary to have an amount greater than that. However, if it is too large, hydrogen will be wasted, so it is preferably about 50 to 100 times the capacity.
基板の温度を６０００〜１２００℃に保つ、６００℃以
下ではダイヤモンドは析出しなく、１２００℃を超える
とガスとなりダイヤモンドは析出しない。基板を除き、
その気相中でダイヤモンドを粉末として析出させること
もできる。The temperature of the substrate is maintained at 6,000 to 1,200°C. Below 600°C, diamond does not precipitate, and when it exceeds 1,200°C, it becomes a gas and diamond does not precipitate. Except for the board,
Diamond can also be precipitated as a powder in the gas phase.
本発明の方法を図面に基づいて説明すると、第１図は本
発明の方法を実施する一実施概要図である。図中１は同
心円状三重管、２は反応容器、３は基板、４は冷却ガス
導入口、５は点火用プラグ、６はシースガス吹出しリン
グ、７は排ガス処理装置、８は真空ポンプを示す。The method of the present invention will be explained based on the drawings. FIG. 1 is a schematic diagram of one implementation of the method of the present invention. In the figure, 1 is a concentric triple tube, 2 is a reaction vessel, 3 is a substrate, 4 is a cooling gas inlet, 5 is an ignition plug, 6 is a sheath gas blowing ring, 7 is an exhaust gas treatment device, and 8 is a vacuum pump.
同心円状三重管１（石英製）の各管より、燃焼用原料ガ
スまたはこれと同時または後に有機化合物または炭素材
を、反応容器２中に導入し、点火用プラグ５により点火
して高温燃焼炎を発生させ、また有機化合物または炭素
材を、分解・蒸発・解離させる。これに炭素に対し５０
倍容量以上の水素をシースガス吹出しリング６から導入
する。ダイヤモンド膜合成の際には、基体３を反応容器
２の内部に設置し、冷却用のガスを冷却ガス導入口４か
ら導入して基板３の温度を６００”〜１２００℃に調整
し、前記基体を当て基板３上にダイヤモンド膜を析出さ
せる。ダイヤモンド粉末合成の際には、基体３を取り外
し、反応容器２内の温度を、冷却ガス導入口４から冷却
ガスを導入して、グイヤモンド生成領域の前記温度に調
整して気相中でダイヤモンド粉末を析出させる。A raw material gas for combustion or an organic compound or a carbon material is introduced into the reaction vessel 2 through each tube of the concentric triple tube 1 (made of quartz) at the same time or after this, and is ignited by the ignition plug 5 to produce a high-temperature combustion flame. It also decomposes, evaporates, and dissociates organic compounds or carbon materials. This is 50% for carbon.
More than twice the capacity of hydrogen is introduced from the sheath gas blowing ring 6. When synthesizing a diamond film, the substrate 3 is placed inside the reaction vessel 2, and cooling gas is introduced from the cooling gas inlet 4 to adjust the temperature of the substrate 3 to 600'' to 1200°C. is applied to deposit a diamond film on the substrate 3. When synthesizing diamond powder, the substrate 3 is removed and the temperature inside the reaction vessel 2 is controlled by introducing cooling gas from the cooling gas inlet 4 into the Guyarmond production area. The diamond powder is precipitated in the gas phase by adjusting the temperature.
発明の効果
本発明の方法によると、有機化合物または炭素材を分解
・蒸発・解離させて炭素を励起したものを作るのに、炭
化水素、水素の単独または混合ガスと酸素の燃焼炎を使
用するため、従来の高価な装置を使用する必要がない。Effects of the Invention According to the method of the present invention, a combustion flame of hydrocarbon, hydrogen alone or a mixed gas and oxygen is used to decompose, evaporate and dissociate organic compounds or carbon materials to produce excited carbon. Therefore, there is no need to use conventional expensive equipment.
またダイヤモンド生成速度は０．１〜数μＩＩＩ／ｌｌ
ｌ１ｎと速い効果を有する。In addition, the diamond production rate is 0.1 to several μIII/ll.
It has a fast effect as l1n.
実施例１゜
第１図に示した装置を用い、石英製三重管の中点火し約
３０００℃の燃焼炎を発生させた。さらにシースガス（
吹き出し口６）として水素５０１１ ／ｗｉｎを流した
。水冷のホルダー上に直径２０ｍのモリブデン基板を置
き光温度計により基板表面が１２００″Ｃの温度になる
位置に１０分間置いて反応を行わせた。Example 1 Using the apparatus shown in FIG. 1, a triple quartz tube was ignited in the middle to generate a combustion flame of about 3000°C. In addition, sheath gas (
Hydrogen 5011/win was flowed through the outlet 6). A molybdenum substrate with a diameter of 20 m was placed on a water-cooled holder, and the reaction was allowed to occur for 10 minutes at a position where the surface of the substrate reached a temperature of 1200''C using an optical thermometer.
反応後、室温に下がったモリブデン基板を取り出して調
べてみると約１０μｍの灰色がかった多結晶の膜が生成
していることがわかった。Ｘ線回折及びラマン散乱スペ
クトルにより立方晶ダイヤモンドであることが確認され
た。After the reaction, the molybdenum substrate, which had cooled to room temperature, was taken out and examined, and it was found that a grayish polycrystalline film of about 10 μm had been formed. It was confirmed by X-ray diffraction and Raman scattering spectrum that it was cubic diamond.
実施例２゜
中心部より酸素２Ｉ２／ｌｌ１ｉｎ、中間部より水素１
０１７ｍ１ｎ、外管よりメタン１００Ｐｉ！、／ｎ＋ｉ
ｎを流して点火し１５００℃以上の燃焼炎を発生させた
。さらにシースガスとして水素５１．／ｎ＋ｉｎを流し
た。水冷のホルダー上に直径２０ｍｍのモリブデン基板
を置き、光温度計により基板表面が１０００℃の温度に
なる位置に１０介聞置いて反応を行わせた。反応後、室
温に下がった基板を取り出して翳べてみると３５μ−の
ダイヤモンド膜が得られていることが確認された。Example 2゜2I2/ll1in of oxygen from the center, 1 of hydrogen from the middle
017mln, methane 100Pi from the outer tube! ,/n+i
The mixture was ignited by flowing n and a combustion flame of 1500°C or higher was generated. In addition, 51% of hydrogen is used as a sheath gas. /n+in was played. A molybdenum substrate with a diameter of 20 mm was placed on a water-cooled holder, and the substrate surface was placed at a temperature of 1000° C. as measured by an optical thermometer for 10 periods to carry out a reaction. After the reaction, the substrate, which had cooled to room temperature, was taken out and looked down upon, and it was confirmed that a 35 μ-diamond film had been obtained.
実施例３゜
中心部より酸素４１／ｌ１ｌｉｎ、中間の管より水素を
１０ ｆ！ ／ｎ＋ｉｎ、外管よりメタン４０ｍ１／ｍ
ｉｎを流して点火し１５００℃以上の燃焼炎を発生させ
た。予め基板を置いた際１２００”Ｃとなる空間を見い
だしておき基体を置かず、その内壁面より円周状に冷却
用ガスとして水素１０１． ／１Ｉｌｉｎを吹き込んだ
。１時間の反応の０．１μｍ程度の立方晶ダイヤモンド
であることが確認された。Example 3゜41/l1lin of oxygen from the center and 10f of hydrogen from the middle tube! /n+in, methane 40ml/m from the outer pipe
It was ignited by flowing in and a combustion flame of over 1500°C was generated. A space was found in advance where the temperature was 1200"C when the substrate was placed, and without placing the substrate, hydrogen 101./1Ilin was blown in as a cooling gas from the inner wall surface in a circumferential manner. 0.1μm after 1 hour reaction. It was confirmed that it was a cubic diamond.
図面は本発明の方法を実施する装置の−ａ様図である。
ｌ：同心円状三重管、 ２：反応容器、３：基板、
４：冷却ガス導入口、５：点火用プラグ、
６：シースガス吹き出しリング、
７：排ガス処理装置、 ８：真空ポンプ。The drawing is a -a view of an apparatus for carrying out the method of the invention. l: concentric triple tube, 2: reaction vessel, 3: substrate,
4: Cooling gas inlet, 5: Ignition plug, 6: Sheath gas blow ring, 7: Exhaust gas treatment device, 8: Vacuum pump.
Claims (1)
空気の６００℃以上の燃焼炎中で有機化合物または炭素
材を分解・蒸発・解離させて炭素を励起し、これに炭素
に対し５０倍容量以上の水素を混合した気体を６００°
〜１２００℃に保持した基板に当てるかあるいはその気
相中でダイヤモンドを析出させることを特徴とするダイ
ヤモンドの合成法。An organic compound or carbon material is decomposed, evaporated, and dissociated in a combustion flame of hydrocarbon, hydrogen alone or a mixture of oxygen gas or air at a temperature of 600°C or higher to excite carbon. A gas mixed with hydrogen is heated at 600°
A method for synthesizing diamond, characterized by depositing diamond on a substrate held at ~1200°C or in its gas phase.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2813388A JPH01203297A (en) | 1988-02-09 | 1988-02-09 | Method for synthesizing diamond with combustion flame |
| US07/307,942 US4981671A (en) | 1988-02-09 | 1989-02-09 | Method for preparing diamond or diamond-like carbon by combustion flame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2813388A JPH01203297A (en) | 1988-02-09 | 1988-02-09 | Method for synthesizing diamond with combustion flame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01203297A true JPH01203297A (en) | 1989-08-16 |
| JPH0346438B2 JPH0346438B2 (en) | 1991-07-16 |
Family
ID=12240274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2813388A Granted JPH01203297A (en) | 1988-02-09 | 1988-02-09 | Method for synthesizing diamond with combustion flame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01203297A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196097A (en) * | 1989-01-24 | 1990-08-02 | Sumitomo Electric Ind Ltd | Method for synthesizing diamond in vapor phase |
| WO1991004353A1 (en) * | 1989-09-22 | 1991-04-04 | Showa Denko Kabushiki Kaisha | Vapor deposited diamond synthesizing method on electrochemically treated substrate |
| JPH0483797A (en) * | 1990-07-26 | 1992-03-17 | Showa Denko Kk | Synthesis of diamond in vapor phase method |
| JPH0440770U (en) * | 1990-08-01 | 1992-04-07 |
-
1988
- 1988-02-09 JP JP2813388A patent/JPH01203297A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196097A (en) * | 1989-01-24 | 1990-08-02 | Sumitomo Electric Ind Ltd | Method for synthesizing diamond in vapor phase |
| WO1991004353A1 (en) * | 1989-09-22 | 1991-04-04 | Showa Denko Kabushiki Kaisha | Vapor deposited diamond synthesizing method on electrochemically treated substrate |
| US5164051A (en) * | 1989-09-22 | 1992-11-17 | Showa Denko K. K. | Method for vapor phase synthesis of diamond on electrochemically treated substrate |
| JPH0483797A (en) * | 1990-07-26 | 1992-03-17 | Showa Denko Kk | Synthesis of diamond in vapor phase method |
| JP2619557B2 (en) * | 1990-07-26 | 1997-06-11 | 昭和電工株式会社 | Synthesis method of vapor phase diamond |
| JPH0440770U (en) * | 1990-08-01 | 1992-04-07 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0346438B2 (en) | 1991-07-16 |
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