JPH0346438B2 - - Google Patents
Info
- Publication number
- JPH0346438B2 JPH0346438B2 JP2813388A JP2813388A JPH0346438B2 JP H0346438 B2 JPH0346438 B2 JP H0346438B2 JP 2813388 A JP2813388 A JP 2813388A JP 2813388 A JP2813388 A JP 2813388A JP H0346438 B2 JPH0346438 B2 JP H0346438B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- carbon
- diamond
- substrate
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 28
- 239000010432 diamond Substances 0.000 claims description 27
- 229910003460 diamond Inorganic materials 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 238000002485 combustion reaction Methods 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 150000002894 organic compounds Chemical class 0.000 claims description 11
- 239000003575 carbonaceous material Substances 0.000 claims description 10
- 229930195733 hydrocarbon Natural products 0.000 claims description 8
- 150000002430 hydrocarbons Chemical class 0.000 claims description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000001308 synthesis method Methods 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 230000001376 precipitating effect Effects 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000000112 cooling gas Substances 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- -1 carbon ions Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000004430 X-ray Raman scattering Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は燃焼炎によるダイヤモンドの合成法に
関する。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a method for synthesizing diamond by combustion flame.
従来技術
従来、高温高圧を用いない気相合成法によるダ
イヤモンドの合成法としては次のような方法が知
られている。Prior Art Conventionally, the following method is known as a diamond synthesis method using a vapor phase synthesis method that does not use high temperature and high pressure.
(1) 放電により炭素イオンあるいは炭化水素イオ
ンを作り、これを電位勾配によつて加速し基板
上に衝突させてダイヤモンドを析出させる所謂
イオンビーム蒸着法、イオンプレーテイング
法。(1) The so-called ion beam evaporation method or ion plating method, in which carbon ions or hydrocarbon ions are created by electric discharge, accelerated by a potential gradient, and collided with a substrate to deposit diamond.
(2) プラズマ、熱、光を用いて炭化水素と水素の
混合ガスを活性化させて基板表面にダイヤモン
ドを析出させる所謂プラズマ法、熱タングステ
ンフイラメント法、光CVD法、高周波熱プラ
ズマ法、直流アーク法。などである。(2) The so-called plasma method, which uses plasma, heat, and light to activate a mixed gas of hydrocarbon and hydrogen to deposit diamond on the substrate surface, thermal tungsten filament method, optical CVD method, high-frequency thermal plasma method, and direct current arc. Law. etc.
しかしながら、上記の方法の高周波熱プラズマ
法及び直流アーク法以外は、ダイヤモンド生成速
度が0.1〜1μm/hr、と遅いばかりでなく、得ら
れる析出面積も小さい。また装置も非常に高価で
ある。高周波熱プラズマ法及び直流アーク法で
は、ダイヤモンド生成速度は数μm/minと速い
が、装置が極めて高価である問題点がある。 However, in the above-mentioned methods other than the high-frequency thermal plasma method and the direct current arc method, not only the diamond formation rate is slow at 0.1 to 1 μm/hr, but also the resulting precipitation area is small. The equipment is also very expensive. Although the high-frequency thermal plasma method and the DC arc method produce diamonds at a high rate of several μm/min, they have the problem that the equipment is extremely expensive.
発明の目的
本発明は前記従来法における問題点を解決すべ
くなされたもので、その目的は簡単で安価な装置
を用い、ダイヤモンドの生成速度が数μm/min
と速いダイヤモンドの合成法を提供するにある。Purpose of the Invention The present invention was made to solve the problems in the conventional method, and its purpose is to use a simple and inexpensive device, and to increase the diamond production rate to several μm/min.
and to provide a fast diamond synthesis method.
発明の構成
本発明者は前記目的を達成すべく鋭意研究の結
果、炭化水素もしくは水素またはその混合ガスと
酸素または空気の燃焼によつて得られる600℃以
上の高温燃焼炎中で有機化合物または炭素材を分
解・蒸発・解離させて炭素を励起させ、これに炭
素に対し50倍容量以上の水素を混合した気体を、
600゜〜1200℃に保持した基板に当てるかあるいは
その気体中でダイヤモンドを析出させることに成
功し、この方法によると0.1〜数μm/minの生成
速度でダイヤモンドを合成し得られることを知見
し得た。この知見に基づいて本発明を完成した。Composition of the Invention As a result of intensive research to achieve the above object, the present inventor has discovered that organic compounds or charcoal can be used in a high-temperature combustion flame of 600°C or higher obtained by combustion of hydrocarbons, hydrogen, or a mixed gas thereof and oxygen or air. The material is decomposed, evaporated, and dissociated to excite carbon, and a gas mixed with hydrogen in an amount more than 50 times the volume of carbon is added.
They succeeded in depositing diamond on a substrate held at 600° to 1200°C or in its gas, and found that diamond could be synthesized at a production rate of 0.1 to several μm/min using this method. Obtained. The present invention was completed based on this knowledge.
本発明の要旨は、
炭化水素、水素の単独または混合ガスと酸素ガ
スまたは空気の600℃以上の燃焼炎中で有機化合
物または炭素材を分解・蒸発・解離させて炭素を
励起し、これにこの炭素に対し50倍容量以上の水
素を混合した気体を600゜〜1200℃に保持した基板
に当てるかあるいはその気相中でダイヤモンドを
析出させることを特徴とするダイヤモンドの合成
法、にある。 The gist of the present invention is to excite carbon by decomposing, evaporating, and dissociating an organic compound or carbon material in a combustion flame of 600°C or more of hydrocarbon, hydrogen alone or a mixed gas, and oxygen gas or air. A method for synthesizing diamond, which is characterized by applying a gas mixture containing 50 times more hydrogen than carbon to a substrate kept at 600° to 1200°C, or precipitating diamond in the gas phase.
本発明の方法における高温燃焼炎中で有機化合
物または炭素材を分解・蒸発・解離させる方法と
しては、高温燃焼炎を発生させ、その中に有機化
合物または炭素材を導入してもよく、あるいは燃
焼原料と同時に有機化合物または炭素材を導入し
てもよい。 As a method for decomposing, evaporating, and dissociating organic compounds or carbon materials in a high-temperature combustion flame in the method of the present invention, a high-temperature combustion flame may be generated and the organic compound or carbon material may be introduced into it, or the organic compound or carbon material may be introduced into the flame. An organic compound or carbon material may be introduced simultaneously with the raw material.
本発明の高温燃焼炎を発生させるガスとして
は、炭化水素もしくは水素またはその混合ガスと
酸素または空気が用いられる。その燃焼炎温度は
使用するガスの種類・濃度とシースガス、冷却用
ガス、例えば水素、不活性ガスの単独またはこれ
らの混合ガスを導入することによつて調整し得ら
れる。燃焼炎の温度は600℃以上であることが必
要で、この温度より低いと単原子の炭素が生成し
得なく、ダイヤモンドを合成し得ない。 Hydrocarbons, hydrogen, or a mixed gas thereof, and oxygen or air are used as the gas for generating the high-temperature combustion flame of the present invention. The combustion flame temperature can be adjusted by introducing the type and concentration of the gas used, a sheath gas, a cooling gas such as hydrogen, an inert gas, or a mixture thereof. The temperature of the combustion flame must be at least 600°C; if the temperature is lower than this, monatomic carbon cannot be produced and diamond cannot be synthesized.
有機化合物としては、燃焼中で分解し、炭素を
含むイオン種、ラジカル種を生成し得るものであ
れば、気体、液体、固体のいずれの形態でもよ
い。例えば、メタン、エタン、プロパン、ブタ
ン、エチレン、ベンゼン等の炭化水素、メタノー
ル、エタノール、プロパノール等のアルコール
類、ポリエチレン、ポリプロピレン等の高分子物
質、油脂、ビリジン、チオフエンのような分子中
に窒素、硫黄等を含むものであつてもよい。 The organic compound may be in any form of gas, liquid, or solid as long as it can be decomposed during combustion and generate carbon-containing ionic species or radical species. For example, nitrogen in molecules such as hydrocarbons such as methane, ethane, propane, butane, ethylene, and benzene, alcohols such as methanol, ethanol, and propanol, polymeric substances such as polyethylene and polypropylene, oils and fats, pyridine, and thiophene, It may also contain sulfur or the like.
炭素材としては、例えば電極用黒鉛が挙げられ
る。 Examples of the carbon material include graphite for electrodes.
励起された炭素雰囲気中に炭素に対し50倍容量
以上のH2を導入、混合する。この水素は炭素の
単原子を安定化し、Sp3の励起状態を保持する作
用をする。水素量が炭素に対し50倍容量より少な
いとグラフアイトとなるので、それ以上の量であ
ることが必要である。しかし、多過ぎると、水素
が無駄になるので50〜100倍容量程度であること
が好ましい。 H 2 is introduced into the excited carbon atmosphere and mixed in an amount more than 50 times the volume of carbon. This hydrogen stabilizes the carbon single atom and acts to maintain the excited state of Sp3 . If the amount of hydrogen is less than 50 times the capacity of carbon, graphite will result, so the amount needs to be greater than that. However, if the amount is too large, hydrogen will be wasted, so it is preferable that the amount is about 50 to 100 times the capacity.
基板の温度を600゜〜1200℃に保つ、600℃以下
ではダイヤモンドは析出しなく、1200℃を越える
とガスとなりダイヤモンドは析出しない。基板を
除き、その気相中でダイヤモンドを粉末として析
出させることもできる。 The temperature of the substrate is maintained between 600° and 1200°C. Below 600°C, diamond does not precipitate, and when it exceeds 1200°C, it becomes a gas and diamond does not precipitate. It is also possible to remove the substrate and deposit diamond as a powder in the gas phase.
本発明の方法を図面に基づいて説明すると、第
1図は本発明の方法を実施する一実施概要図であ
る。図中1は同心円三重管、2は反応容器、3は
基板、4は冷却ガス導入口、5は点火用プラグ、
6はシースガス吹出しリング、7は排ガス処理装
置、8は真空ポンプを示す。 The method of the present invention will be explained based on the drawings. FIG. 1 is a schematic diagram of one implementation of the method of the present invention. In the figure, 1 is a concentric triple tube, 2 is a reaction vessel, 3 is a substrate, 4 is a cooling gas inlet, 5 is an ignition plug,
6 is a sheath gas blowing ring, 7 is an exhaust gas treatment device, and 8 is a vacuum pump.
同心円状三重管1(石英製)の各管より、燃焼
用原料ガスまたはこれと同時または後に有機化合
物または炭素材を、反応容器2中に導入し、点火
用プラグ5により点火して高温燃焼炎を発生さ
せ、また有機化合物または炭素材を、分解・蒸
発・解離させる。これに炭素に対し50倍容量以上
の水素をシースガス吹出しリング6から導入す
る。ダイヤモンド膜合成の際には、基体3を反応
容器2の内部に設置し、冷却用のガスを冷却ガス
導入口4から導入して基板3の温度を600゜〜1200
℃に調整し、前記基体を当て基板3上にダイヤモ
ンド膜を析出させる。ダイヤモンド粉末合成の際
には、基体3を取り外し、反応容器2内の温度
を、冷却ガス導入口4から冷却ガスを導入して、
ダイヤモンド生成領域の前記温度に調整して気相
中でダイヤモンド粉末を析出させる。 A raw material gas for combustion or an organic compound or a carbon material is introduced into the reaction vessel 2 through each tube of the concentric triple tube 1 (made of quartz) at the same time or after this, and is ignited by the ignition plug 5 to produce a high-temperature combustion flame. It also decomposes, evaporates, and dissociates organic compounds or carbon materials. Hydrogen in an amount more than 50 times the capacity of carbon is introduced into this from the sheath gas blowing ring 6. During diamond film synthesis, the substrate 3 is placed inside the reaction vessel 2, and cooling gas is introduced from the cooling gas inlet 4 to maintain the temperature of the substrate 3 at 600° to 1200°.
The temperature is adjusted to .degree. C., and the substrate 3 is applied with the substrate 3 to deposit a diamond film. When synthesizing diamond powder, the substrate 3 is removed and the temperature inside the reaction vessel 2 is controlled by introducing cooling gas from the cooling gas inlet 4.
The diamond powder is precipitated in the gas phase by adjusting the temperature to the above-mentioned temperature in the diamond production region.
発明の効果
本発明の方法によると、有機化合物または炭素
材を分解・蒸発・解離させて炭素を励起したもの
を作るのに、炭化水素、水素の単独または混合ガ
スと酸素の燃焼炎を使用するため、従来の高価な
装置を使用する必要がない。またダイヤモンド生
成速度は0.1〜数μm/minと速い効果を有する。Effects of the Invention According to the method of the present invention, a combustion flame of hydrocarbon, hydrogen alone or a mixed gas and oxygen is used to decompose, evaporate, and dissociate organic compounds or carbon materials to produce excited carbon. Therefore, there is no need to use conventional expensive equipment. Furthermore, the diamond production rate is as fast as 0.1 to several μm/min.
実施例 1
第1図に示した装置を用い、石英製三重管の中
心部より酸素10/min、中間部よりプロパンガ
ス10ml/min、外側の管よりメタン2ml/minを
流して点火し約3000℃の燃焼炎を発生させた。さ
らにシースガス(吹き出し口6)として水素50
/minを流した。水冷のホルダー上に直径20mm
のモリブデン基板を置き光温度計により基板表面
が1200℃の温度になる位置に10分間置いて反応を
行わせた。反応後、室温に下がつたモリブデン基
板を取り出して調べてみると約10μmの灰色がか
つた多結晶の膜が生成していることがわかつた。
X線回折及びラマン散乱スペクトルにより立方晶
ダイヤモンドであることが確認された。Example 1 Using the apparatus shown in Figure 1, oxygen was flowed at 10/min from the center of a triple-walled quartz tube, propane gas at 10 ml/min from the middle, and methane at 2 ml/min from the outer tube to ignite the tube. A combustion flame of ℃ was generated. Additionally, 50% hydrogen is used as sheath gas (outlet 6).
/min. 20mm diameter on water-cooled holder
A molybdenum substrate was placed and placed at a position where the surface of the substrate reached a temperature of 1200°C using an optical thermometer for 10 minutes to allow the reaction to occur. After the reaction, the molybdenum substrate, which had cooled to room temperature, was taken out and examined, and it was found that a gray polycrystalline film of approximately 10 μm had formed.
It was confirmed by X-ray diffraction and Raman scattering spectrum that it was cubic diamond.
実施例 2
中心部より酸素2/min、中間部より水素10
/min、外管よりメタン100ml/minを流して
点火し1500℃以上の燃焼炎を発生させた。さらに
シースガスとして水素5/minを流した。水冷
のホルダー上に直径20mmのモリブデン基板を置
き、光温度計により基板表面が1000℃の温度にな
る位置に10分間置いて反応を行わせた。反応後、
室温に下がつた基板を取り出して調べてみると
35μmのダイヤモンド膜が得られていることが確
認された。Example 2 Oxygen 2/min from the center, hydrogen 10 from the middle
/min, 100ml/min of methane was flowed through the outer tube and ignited to generate a combustion flame of over 1500℃. Furthermore, hydrogen was flowed at 5/min as a sheath gas. A molybdenum substrate with a diameter of 20 mm was placed on a water-cooled holder, and the substrate surface was placed at a temperature of 1000° C. using a photothermometer for 10 minutes to allow the reaction to occur. After the reaction,
When I took out the board that had cooled to room temperature and examined it,
It was confirmed that a 35 μm diamond film was obtained.
実施例 3
中心部より酸素4/min、中間の管より水素
を10/min、外管よりメタン40ml/minを流し
て点火し1500℃以上の燃焼炎を発生させた。予め
基板を置いた際1200℃となる空間を見いだしてお
き基体を置かず、その内壁面より円周状に冷却用
ガスとして水素10/minを吹き込んだ。1時間
の反応の後、反応容器壁面および低部ち堆積した
灰色がかつた粉末0.03gを回収して調べてみたと
ころ、0.1μm程度の立方晶ダイヤモンドであるこ
とが確認された。Example 3 Oxygen at 4/min from the center, hydrogen at 10/min from the middle tube, and methane at 40 ml/min from the outer tube were ignited to generate a combustion flame of 1500°C or higher. A space was found in advance where the temperature would be 1200°C when the substrate was placed, and without placing the substrate, hydrogen was blown at 10/min as a cooling gas from the inner wall of the space in a circumferential manner. After one hour of reaction, 0.03 g of grayish powder deposited on the walls and bottom of the reaction vessel was collected and examined, and it was confirmed to be cubic diamond with a diameter of approximately 0.1 μm.
図面は本発明の方法を実施する装置の一態様図
である。
1:同心円状三重管、2:反応容器、3:基
板、4:冷却ガス導入口、5:点火用プラグ、
6:シースガス吹き出しリング、7:排ガス処理
装置、8:真空ポンプ。
The drawing is an embodiment of an apparatus for carrying out the method of the invention. 1: Concentric triple tube, 2: Reaction vessel, 3: Substrate, 4: Cooling gas inlet, 5: Ignition plug,
6: Sheath gas blowing ring, 7: Exhaust gas treatment device, 8: Vacuum pump.
Claims (1)
ガスまたは空気の600℃以上の燃焼炎中で有機化
合物または炭素材を分解・蒸発・解離させて炭素
を励起し、これに炭素に対し50倍容量以上の水素
を混合した気体を600゜〜1200℃に保持した基板に
当てるかあるいはその気相中でダイヤモンドを析
出させることを特徴とするダイヤモンドの合成
法。1 Excite carbon by decomposing, evaporating, and dissociating organic compounds or carbon materials in a combustion flame of hydrocarbon, hydrogen alone or mixed gas, and oxygen gas or air at 600°C or higher, and then excite carbon with a capacity 50 times that of carbon. A diamond synthesis method characterized by applying a gas containing a mixture of the above hydrogens to a substrate maintained at a temperature of 600° to 1200°C, or precipitating diamond in the gas phase.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2813388A JPH01203297A (en) | 1988-02-09 | 1988-02-09 | Method for synthesizing diamond with combustion flame |
US07/307,942 US4981671A (en) | 1988-02-09 | 1989-02-09 | Method for preparing diamond or diamond-like carbon by combustion flame |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2813388A JPH01203297A (en) | 1988-02-09 | 1988-02-09 | Method for synthesizing diamond with combustion flame |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01203297A JPH01203297A (en) | 1989-08-16 |
JPH0346438B2 true JPH0346438B2 (en) | 1991-07-16 |
Family
ID=12240274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2813388A Granted JPH01203297A (en) | 1988-02-09 | 1988-02-09 | Method for synthesizing diamond with combustion flame |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01203297A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794360B2 (en) * | 1989-01-24 | 1995-10-11 | 住友電気工業株式会社 | Gas phase synthesis of diamond |
US5164051A (en) * | 1989-09-22 | 1992-11-17 | Showa Denko K. K. | Method for vapor phase synthesis of diamond on electrochemically treated substrate |
JPH0440770U (en) * | 1990-08-01 | 1992-04-07 | ||
JP2619557B2 (en) * | 1990-07-26 | 1997-06-11 | 昭和電工株式会社 | Synthesis method of vapor phase diamond |
-
1988
- 1988-02-09 JP JP2813388A patent/JPH01203297A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH01203297A (en) | 1989-08-16 |
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