JPH0352535B2 - - Google Patents
Info
- Publication number
- JPH0352535B2 JPH0352535B2 JP4736183A JP4736183A JPH0352535B2 JP H0352535 B2 JPH0352535 B2 JP H0352535B2 JP 4736183 A JP4736183 A JP 4736183A JP 4736183 A JP4736183 A JP 4736183A JP H0352535 B2 JPH0352535 B2 JP H0352535B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- magnetic field
- magnet
- sputtering
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 11
- 230000003628 erosive effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4736183A JPS59173265A (ja) | 1983-03-22 | 1983-03-22 | スパツタ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4736183A JPS59173265A (ja) | 1983-03-22 | 1983-03-22 | スパツタ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59173265A JPS59173265A (ja) | 1984-10-01 |
| JPH0352535B2 true JPH0352535B2 (fr) | 1991-08-12 |
Family
ID=12772973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4736183A Granted JPS59173265A (ja) | 1983-03-22 | 1983-03-22 | スパツタ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59173265A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6260866A (ja) * | 1985-08-02 | 1987-03-17 | Fujitsu Ltd | マグネトロンスパツタ装置 |
| GB8909747D0 (en) * | 1989-04-27 | 1989-06-14 | Ionic Coatings Limited | Sputtering apparatus |
| US5417833A (en) * | 1993-04-14 | 1995-05-23 | Varian Associates, Inc. | Sputtering apparatus having a rotating magnet array and fixed electromagnets |
| GB9606920D0 (en) * | 1996-04-02 | 1996-06-05 | Applied Vision Ltd | Magnet array for magnetrons |
| JP4371569B2 (ja) * | 2000-12-25 | 2009-11-25 | 信越化学工業株式会社 | マグネトロンスパッタ装置とそれを用いたフォトマスクブランクの製造方法 |
| CN104862653B (zh) * | 2015-05-20 | 2017-07-07 | 魏永强 | 电弧离子镀和高功率脉冲磁控溅射复合的沉积方法 |
| CN105803411A (zh) * | 2016-05-11 | 2016-07-27 | 魏永强 | 电弧离子镀和孪生靶双极性高功率脉冲磁控溅射复合方法 |
| CN109989039A (zh) * | 2017-12-30 | 2019-07-09 | 魏永强 | 一种组合磁场、组合管和多孔挡板复合的真空沉积方法 |
-
1983
- 1983-03-22 JP JP4736183A patent/JPS59173265A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59173265A (ja) | 1984-10-01 |
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