JPH0351110B2 - - Google Patents

Info

Publication number
JPH0351110B2
JPH0351110B2 JP58140129A JP14012983A JPH0351110B2 JP H0351110 B2 JPH0351110 B2 JP H0351110B2 JP 58140129 A JP58140129 A JP 58140129A JP 14012983 A JP14012983 A JP 14012983A JP H0351110 B2 JPH0351110 B2 JP H0351110B2
Authority
JP
Japan
Prior art keywords
region
potential
bit line
lines
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58140129A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59130474A (ja
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP58140129A priority Critical patent/JPS59130474A/ja
Publication of JPS59130474A publication Critical patent/JPS59130474A/ja
Publication of JPH0351110B2 publication Critical patent/JPH0351110B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • H10D30/681Floating-gate IGFETs having only two programming levels

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP58140129A 1983-07-30 1983-07-30 不揮発性メモリ Granted JPS59130474A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58140129A JPS59130474A (ja) 1983-07-30 1983-07-30 不揮発性メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58140129A JPS59130474A (ja) 1983-07-30 1983-07-30 不揮発性メモリ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1846577A Division JPS53103330A (en) 1977-02-21 1977-02-21 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS59130474A JPS59130474A (ja) 1984-07-27
JPH0351110B2 true JPH0351110B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-08-05

Family

ID=15261567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58140129A Granted JPS59130474A (ja) 1983-07-30 1983-07-30 不揮発性メモリ

Country Status (1)

Country Link
JP (1) JPS59130474A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Also Published As

Publication number Publication date
JPS59130474A (ja) 1984-07-27

Similar Documents

Publication Publication Date Title
US11508728B2 (en) Semiconductor memory device, method of driving the same and method of fabricating the same
JP3683895B2 (ja) 半導体記憶装置並びに携帯電子機器
US4434433A (en) Enhancement mode JFET dynamic memory
EP0014388B1 (en) Semiconductor memory device
US4017888A (en) Non-volatile metal nitride oxide semiconductor device
KR100887866B1 (ko) 측면 사이리스터 및 트래핑층을 포함하는 실리콘 온 절연체판독-기록 비휘발성 메모리
JP2004047936A (ja) 半導体記憶装置
JPWO2002067320A1 (ja) 半導体記憶装置および半導体集積回路
JP3554666B2 (ja) 半導体メモリ装置
US4068217A (en) Ultimate density non-volatile cross-point semiconductor memory array
JPS627714B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2004349308A (ja) 半導体記憶装置
KR20010051927A (ko) 비휘발성 반도체 기억 장치와 그 제어 방법
JP2004342889A (ja) 半導体記憶装置、半導体装置、半導体記憶装置の製造方法、および携帯電子機器
JPS5818960A (ja) メモリ・セル
JPH0738066A (ja) 接合電界型ダイナミックramおよびその製造方法
JP2005150765A (ja) 半導体記憶装置、その製造方法及び動作方法、並びに携帯電子機器
JPH0351110B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0351109B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6227551B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6158982B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US5132748A (en) Semiconductor memory device
JP2004342881A (ja) 半導体記憶装置および半導体装置およびicカードおよび携帯電子機器および半導体記憶装置の製造方法
JPS592379B2 (ja) 半導体メモリ
JP2004349352A (ja) 半導体記憶装置およびその動作方法、半導体装置ならびに携帯電子機器