JPH0351109B2 - - Google Patents
Info
- Publication number
- JPH0351109B2 JPH0351109B2 JP58140128A JP14012883A JPH0351109B2 JP H0351109 B2 JPH0351109 B2 JP H0351109B2 JP 58140128 A JP58140128 A JP 58140128A JP 14012883 A JP14012883 A JP 14012883A JP H0351109 B2 JPH0351109 B2 JP H0351109B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- bit line
- potential
- word line
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 description 12
- 230000010354 integration Effects 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 metals Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58140128A JPS5946062A (ja) | 1983-07-30 | 1983-07-30 | 半導体メモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58140128A JPS5946062A (ja) | 1983-07-30 | 1983-07-30 | 半導体メモリ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1846577A Division JPS53103330A (en) | 1977-02-21 | 1977-02-21 | Semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5946062A JPS5946062A (ja) | 1984-03-15 |
| JPH0351109B2 true JPH0351109B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-08-05 |
Family
ID=15261546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58140128A Granted JPS5946062A (ja) | 1983-07-30 | 1983-07-30 | 半導体メモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5946062A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1983
- 1983-07-30 JP JP58140128A patent/JPS5946062A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5946062A (ja) | 1984-03-15 |
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