JPH0350853A - Solder coating of semiconductor device - Google Patents
Solder coating of semiconductor deviceInfo
- Publication number
- JPH0350853A JPH0350853A JP1186635A JP18663589A JPH0350853A JP H0350853 A JPH0350853 A JP H0350853A JP 1186635 A JP1186635 A JP 1186635A JP 18663589 A JP18663589 A JP 18663589A JP H0350853 A JPH0350853 A JP H0350853A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- coated
- granular
- succession
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000000576 coating method Methods 0.000 title abstract description 6
- 239000011248 coating agent Substances 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 11
- 230000004907 flux Effects 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims abstract description 6
- 238000007610 electrostatic coating method Methods 0.000 claims abstract description 5
- 239000011347 resin Substances 0.000 abstract description 11
- 229920005989 resin Polymers 0.000 abstract description 11
- 230000005686 electrostatic field Effects 0.000 abstract description 4
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 238000009434 installation Methods 0.000 abstract 2
- 239000002689 soil Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 238000004065 wastewater treatment Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000006071 cream Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は半導体装置の金属部に半田を塗布する半導体装
置の半田塗布方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a solder application method for a semiconductor device, which applies solder to a metal part of a semiconductor device.
（従来の技術）
従来、電子回路に使用される実装基数や、被実装部品で
ある半導体チップ樹脂対１１−済リードフレーム体等の
半導体装置には、実装前に予め半田か塗布されている。(Prior Art) Conventionally, solder is applied in advance to mounting bases used in electronic circuits and semiconductor devices such as semiconductor chip resin pair 11-prepared lead frames which are components to be mounted.
半田は実装基板や被実装部品の金属部に塗布され、実装
時に配線部の接合を容易に行なうことかできるようにな
っている。Solder is applied to the metal parts of the mounting board and components to be mounted, so that wiring parts can be easily joined during mounting.
半田の塗布方法としては、半田メツキまたは゛ト田槽へ
の浸漬（半田デイツプ）が一般に行なわれている。As a method for applying solder, solder plating or dipping into a solder tank (solder dip) is generally performed.
しかしながら、これらの半田塗布方法によれば、いずれ
の場合も半田を所定の厚さでかつ均一に塗布することは
むずかしくなっている。このため、被実装部品を実装基
板に実装する際、フラックスを含有するクリーム半田を
再度実装基板の必要箇所に追加して塗布している。However, according to these solder application methods, it is difficult to uniformly apply solder to a predetermined thickness in any case. For this reason, when mounting the component to be mounted on the mounting board, cream solder containing flux is added and applied again to the necessary locations on the mounting board.
（発明が解決しようとする課題）
上述した半田の塗布方法は、半田メツキまたは半田デイ
ツプのいずれの場合も湿式１程により行なわれるため、
使用済溶液を廃棄するために排水処理装置が必要となる
。また半田を所定の１９さてかつ均一に塗布するために
は、高価な制御装置つ・必要となる。(Problem to be Solved by the Invention) The above-mentioned solder application method is carried out by wet method 1 in both solder plating and solder dipping.
A wastewater treatment facility is required to dispose of the used solution. Further, an expensive control device is required to apply the solder uniformly and in a predetermined amount.
なお、半田の塗布方法のうち、半田メツキの場合は、塗
布された半田の中に、半田以外の有機物を含むことがあ
る。このように他の有機物を含むと、その後の実装作業
に支障か生じる。Note that among the solder application methods, in the case of solder plating, the applied solder may contain organic substances other than solder. If other organic substances are included in this way, it may cause problems in subsequent mounting work.
一方、半田デイツプにより塗布する場合、例えば被実装
部品のリード線のリードピッチが狭くなると（０，８＋
＋＋ｍ程度以下）、リード線間で塗布された半田により
ブリッジが形成されることがある。On the other hand, when applying with a solder dip, for example, if the lead pitch of the lead wire of the mounted component becomes narrow (0,8+
++m or less), a bridge may be formed by the solder applied between the lead wires.
また半田デイツプにより塗布する場合、熱の影響で被実
装部品の半導体チップ等を劣化させることがある。Furthermore, when applying with a solder dip, the semiconductor chips and the like of the mounted components may deteriorate due to the influence of heat.
本発明はこのような点を考慮してなされたものであり、
所定の厚さでかつ均一に半田を塗布することができると
ともに、塗布作業を容易かつ低コストに行なうことがで
き、被塗布部品を傷めることのない半導体装置の半田塗
布方法を提供することを目的とする。The present invention has been made in consideration of these points,
The purpose of the present invention is to provide a method for applying solder to a semiconductor device, which allows solder to be applied uniformly to a predetermined thickness, allows the application work to be performed easily and at low cost, and does not damage the parts to be applied. shall be.
（課題を解決するための手段）
本発明は、表面にフラックスがコーティングされた多数
の粒状土［１を形成し、この粒状土［１’ｌを静電塗布
法により半導体装置の金属部に塗布することを特徴とす
る半導体装置の半田塗布方法である。(Means for Solving the Problems) The present invention involves forming a large number of granular soils [1'l] whose surfaces are coated with flux, and applying the granular soils [1'l] to metal parts of semiconductor devices by an electrostatic coating method. A method of applying solder to a semiconductor device is characterized in that:
（作 用）
本発明によれば、静電塗布法により粒状半田を塗布する
ことにより、半導体装置の金属部に所定の厚さに均一に
半田を塗布することかできる。(Function) According to the present invention, by applying granular solder using an electrostatic coating method, it is possible to uniformly apply solder to a predetermined thickness on a metal portion of a semiconductor device.
（実施例） 以下、図面を参照して本発明の詳細な説明する。(Example) Hereinafter, the present invention will be described in detail with reference to the drawings.
第１図は本発明による半導体装置の半田塗（ｈ方法の一
実施例を示す図である。FIG. 1 is a diagram showing an embodiment of the soldering method for semiconductor devices according to the present invention.
本実施例において、半導体装置として、第１図に示すよ
うな半導体チップ樹脂封止済リードフレーム体１を用い
た。In this example, a semiconductor chip resin-sealed lead frame body 1 as shown in FIG. 1 was used as a semiconductor device.
この半導体チップ樹脂封止済リードフレーム体１は、リ
ードフレーム２に半導体チップ（図示せず）をマウント
し、この半導体チップおよび配線部回りをモールド樹脂
３で樹脂封止したものである。また、モールド樹脂３の
外方には、複数のリード線４か突出している。This semiconductor chip resin-sealed lead frame body 1 has a semiconductor chip (not shown) mounted on a lead frame 2, and the semiconductor chip and its wiring portions are sealed with a mold resin 3. Furthermore, a plurality of lead wires 4 protrude outward from the molded resin 3.
次に半田塗布方法について詳述する。Next, the solder application method will be explained in detail.
まず、粒径が数１０μｍ〜数１００μｍの多数の粒状半
田を用意し、この粒状半田の表面にｆｒＦ８゜系フラッ
クスをコーティングする。このフラックスは半田の確実
な接合を助けるものである。First, a large number of granular solder particles each having a particle size of several tens of micrometers to several hundreds of micrometers are prepared, and the surfaces of these granular solder particles are coated with frF8° flux. This flux helps ensure reliable solder bonding.
続いて、第１図に示す半導体チップ樹脂封１１ユ済リー
ドフレーム体１を接地して陽極とし、−ノｊ、塗布機（
図示せず）を陰極とし、両極間に高電圧を印加して静電
場を形成する。続いて、この静電場にフラックスがコー
ティングされた粒状ｆｍを所定量霧状にして送込む。こ
のようにして、半導体チップ樹脂封止済リードフレーム
体１の金属部（モールド樹脂３を除いた部分）表面に粒
状土ｉｌ＋が所定の厚さに均一に塗布される。この場合
、モールド樹脂３を被覆することにより、粒状土１１１
を良好に塗布することができる。Next, the lead frame body 1 with the semiconductor chip resin sealed 11 shown in FIG. 1 is grounded and used as an anode, and
(not shown) is used as a cathode, and a high voltage is applied between the two electrodes to form an electrostatic field. Subsequently, a predetermined amount of granular fm coated with flux is fed into the electrostatic field in the form of a mist. In this way, the granular soil il+ is uniformly applied to a predetermined thickness on the surface of the metal part (the part excluding the mold resin 3) of the semiconductor chip resin-sealed lead frame body 1. In this case, by covering the mold resin 3, the granular soil 111
can be applied well.
続いて、半導体チップ樹脂封止済リードフレーム体１の
塗布部分を半田溶融温度以上に加熱することにより、良
質の半田被膜を形成することかてきる。Subsequently, by heating the applied portion of the semiconductor chip resin-sealed lead frame body 1 to a temperature higher than the solder melting temperature, a high quality solder film can be formed.
このように半田被覆が形成された半導体チップ樹脂封止
済リードフレーム体１は、その後リード線４部分て破断
され、半導体チップを樹脂対１にしたモールド樹脂３側
が実装基数（図示せず）に実装される。The semiconductor chip resin-sealed lead frame body 1 on which the solder coating has been formed is then broken at the lead wires 4, and the mold resin 3 side, in which the semiconductor chip is placed in one resin pair, is connected to the mounting base (not shown). Implemented.
本実施例によれば、所定量の粒状半田を静電塗布法によ
り半導体チップ樹脂封止済リードフレーム体１の金属部
に塗布し、その後この塗布部分を加熱することにより、
所定の厚さでかつ均一な半田被覆を形成することができ
る。このため実装時に再度半田を塗布する必要はない。According to this embodiment, by applying a predetermined amount of granular solder to the metal part of the semiconductor chip resin-sealed lead frame body 1 by electrostatic coating method, and then heating this applied part,
A uniform solder coating with a predetermined thickness can be formed. Therefore, there is no need to apply solder again during mounting.
また、従来のような湿式１程によらずに半田を塗布する
ことかできるので、排水処理装置等の特殊な付帯設備を
設ける必要はなく、製造コストの低減を図ることができ
る。Further, since solder can be applied without using the conventional wet method, there is no need to provide special incidental equipment such as a wastewater treatment device, and manufacturing costs can be reduced.
なお、上記実施例において、半導体装置として、半導体
チップ樹脂封止済リードフレーム体１を用いた例を示し
たが、これに限らす例えば実装基数の金属部に半田を塗
布してもよい。In the above embodiment, an example was shown in which the semiconductor chip resin-sealed lead frame body 1 was used as the semiconductor device, but the present invention is not limited to this. For example, solder may be applied to the metal parts of the number of mounting bases.
以上説明したように、本発明によれば、静ｉヒ塗布法に
より粒状半田を塗布することにより、半導体装置の金属
部に所定の厚さに均一に半田をｉ ／１＋することがで
きる。このため、容易かつ確実な実装作業を行なうこと
ができる。また湿式上程によらずに半田を塗布すること
かできるので、排水処理装置等の特殊な付帯設備を設け
る必要はなく、製造コストの低減を図ることができる。As described above, according to the present invention, by applying granular solder using the static i-blow coating method, it is possible to uniformly apply solder i/1+ to a predetermined thickness on a metal portion of a semiconductor device. Therefore, the mounting work can be carried out easily and reliably. Further, since solder can be applied without resorting to a wet process, there is no need to provide special incidental equipment such as a waste water treatment device, and manufacturing costs can be reduced.
第１図は本発明による半導体装置の半ｌ」塗布方法によ
って塗布される半導体チップ樹脂封止済リードフレーム
体を示す斜視図である。
１・・・半導体チップ樹脂封１Ｌ済リードフレーム体、
２・・・リードフレーム、３・・・モールド樹脂、４・
・・リード線。FIG. 1 is a perspective view showing a semiconductor chip resin-sealed lead frame body coated by a semiconductor device coating method according to the present invention. 1... Semiconductor chip resin-sealed 1L lead frame body,
2...Lead frame, 3...Mold resin, 4...
··Lead.
Claims (1)
を形成し、この粒状半田を静電塗布法により半導体装置
の金属部に塗布することを特徴とする半導体装置の半田
塗布方法。1. A method for applying solder to a semiconductor device, which comprises forming a large number of solder particles on the surface of which is coated with flux, and applying the solder particles to a metal part of the semiconductor device using an electrostatic coating method.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1186635A JPH0760881B2 (en) | 1989-07-19 | 1989-07-19 | Solder application method for semiconductor devices |
| KR1019900010746A KR910003775A (en) | 1989-07-19 | 1990-07-16 | Solder coating method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1186635A JPH0760881B2 (en) | 1989-07-19 | 1989-07-19 | Solder application method for semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0350853A true JPH0350853A (en) | 1991-03-05 |
| JPH0760881B2 JPH0760881B2 (en) | 1995-06-28 |
Family
ID=16192035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1186635A Expired - Fee Related JPH0760881B2 (en) | 1989-07-19 | 1989-07-19 | Solder application method for semiconductor devices |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0760881B2 (en) |
| KR (1) | KR910003775A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0595343A2 (en) * | 1992-10-30 | 1994-05-04 | Showa Denko Kabushiki Kaisha | Method of forming solder film |
| EP0788300A1 (en) * | 1996-02-01 | 1997-08-06 | Motorola, Inc. | Method and apparatus for forming a conductive layer on a printed wiring board terminal |
| EP0751555A3 (en) * | 1995-06-26 | 1998-07-08 | Motorola, Inc. | Method for making semiconductor devices having electroplated leads |
| US5928440A (en) * | 1992-10-30 | 1999-07-27 | Showa Denko K.K. | Method of forming solder film |
| JP2005046895A (en) * | 2003-07-30 | 2005-02-24 | Toyo Aluminum Shoji Kk | Joining method and joining device |
-
1989
- 1989-07-19 JP JP1186635A patent/JPH0760881B2/en not_active Expired - Fee Related
-
1990
- 1990-07-16 KR KR1019900010746A patent/KR910003775A/en not_active IP Right Cessation
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0595343A2 (en) * | 1992-10-30 | 1994-05-04 | Showa Denko Kabushiki Kaisha | Method of forming solder film |
| EP0595343A3 (en) * | 1992-10-30 | 1994-06-08 | Showa Denko Kk | Method of forming solder film |
| US5928440A (en) * | 1992-10-30 | 1999-07-27 | Showa Denko K.K. | Method of forming solder film |
| EP0751555A3 (en) * | 1995-06-26 | 1998-07-08 | Motorola, Inc. | Method for making semiconductor devices having electroplated leads |
| KR100479243B1 (en) * | 1995-06-26 | 2005-08-01 | 프리스케일 세미컨덕터, 인크. | Method for manufacturing a semiconductor device having an electroplated lead |
| EP0788300A1 (en) * | 1996-02-01 | 1997-08-06 | Motorola, Inc. | Method and apparatus for forming a conductive layer on a printed wiring board terminal |
| JP2005046895A (en) * | 2003-07-30 | 2005-02-24 | Toyo Aluminum Shoji Kk | Joining method and joining device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0760881B2 (en) | 1995-06-28 |
| KR910003775A (en) | 1991-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |