JPH0350367B2 - - Google Patents

Info

Publication number

JPH0350367B2

JPH0350367B2 JP27766884A JP27766884A JPH0350367B2 JP H0350367 B2 JPH0350367 B2 JP H0350367B2 JP 27766884 A JP27766884 A JP 27766884A JP 27766884 A JP27766884 A JP 27766884A JP H0350367 B2 JPH0350367 B2 JP H0350367B2

Authority

JP

Japan

Prior art keywords

transparent conductive

substrate

conductive film

target

targets

Prior art date

1984-12-29

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

• Espacenet
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• 239000000758 substrate Substances 0.000 claims description 40
• XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 31
• 239000011787 zinc oxide Substances 0.000 claims description 15
• XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 13
• 239000007789 gas Substances 0.000 claims description 13
• 238000000034 method Methods 0.000 claims description 12
• 238000004519 manufacturing process Methods 0.000 claims description 10
• 229910052786 argon Inorganic materials 0.000 claims description 8
• 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
• 229910052760 oxygen Inorganic materials 0.000 claims description 8
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
• 239000001301 oxygen Substances 0.000 claims description 7
• AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 3
• 229910001195 gallium oxide Inorganic materials 0.000 claims description 3
• 229910003437 indium oxide Inorganic materials 0.000 claims description 3
• PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
• TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
• 229910052782 aluminium Inorganic materials 0.000 claims description 2
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
• 229910052738 indium Inorganic materials 0.000 claims description 2
• APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
• GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
• 229910001297 Zn alloy Inorganic materials 0.000 claims 1
• 229910052733 gallium Inorganic materials 0.000 claims 1
• 239000010408 film Substances 0.000 description 53
• 238000004544 sputter deposition Methods 0.000 description 11
• 239000010409 thin film Substances 0.000 description 9
• 230000000694 effects Effects 0.000 description 8
• 238000002834 transmittance Methods 0.000 description 7
• 230000015572 biosynthetic process Effects 0.000 description 5
• 230000008859 change Effects 0.000 description 5
• 239000002245 particle Substances 0.000 description 5
• 230000001965 increasing effect Effects 0.000 description 4
• 230000009471 action Effects 0.000 description 2
• 239000013078 crystal Substances 0.000 description 2
• 230000003247 decreasing effect Effects 0.000 description 2
• 150000002500 ions Chemical class 0.000 description 2
• 239000000463 material Substances 0.000 description 2
• 239000002994 raw material Substances 0.000 description 2
• 230000008707 rearrangement Effects 0.000 description 2
• 238000001179 sorption measurement Methods 0.000 description 2
• 238000004804 winding Methods 0.000 description 2
• 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
• AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
• 239000000956 alloy Substances 0.000 description 1
• 229910045601 alloy Inorganic materials 0.000 description 1
• -1 argon ions Chemical class 0.000 description 1
• 230000008901 benefit Effects 0.000 description 1
• 238000010586 diagram Methods 0.000 description 1
• 230000001747 exhibiting effect Effects 0.000 description 1
• 239000011521 glass Substances 0.000 description 1
• 239000004973 liquid crystal related substance Substances 0.000 description 1
• 229910052751 metal Inorganic materials 0.000 description 1
• 239000002184 metal Substances 0.000 description 1
• 239000000203 mixture Substances 0.000 description 1
• 230000002265 prevention Effects 0.000 description 1
• 238000005245 sintering Methods 0.000 description 1
• 230000008685 targeting Effects 0.000 description 1
• JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1