JPH034993B2 - - Google Patents

Info

Publication number
JPH034993B2
JPH034993B2 JP62327172A JP32717287A JPH034993B2 JP H034993 B2 JPH034993 B2 JP H034993B2 JP 62327172 A JP62327172 A JP 62327172A JP 32717287 A JP32717287 A JP 32717287A JP H034993 B2 JPH034993 B2 JP H034993B2
Authority
JP
Japan
Prior art keywords
output
signal
circuit
transistor
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62327172A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63200390A (ja
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP62327172A priority Critical patent/JPS63200390A/ja
Publication of JPS63200390A publication Critical patent/JPS63200390A/ja
Publication of JPH034993B2 publication Critical patent/JPH034993B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
JP62327172A 1987-12-25 1987-12-25 半導体メモリ Granted JPS63200390A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62327172A JPS63200390A (ja) 1987-12-25 1987-12-25 半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62327172A JPS63200390A (ja) 1987-12-25 1987-12-25 半導体メモリ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8242180A Division JPS578988A (en) 1980-06-18 1980-06-18 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS63200390A JPS63200390A (ja) 1988-08-18
JPH034993B2 true JPH034993B2 (cs) 1991-01-24

Family

ID=18196109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62327172A Granted JPS63200390A (ja) 1987-12-25 1987-12-25 半導体メモリ

Country Status (1)

Country Link
JP (1) JPS63200390A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0434791A (ja) * 1990-05-31 1992-02-05 Fujitsu Ltd 半導体記憶装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6019600B2 (ja) * 1978-06-23 1985-05-16 株式会社東芝 半導体メモリ−
JPS5570993A (en) * 1978-11-24 1980-05-28 Hitachi Ltd Memory circuit
JPS55138128A (en) * 1979-04-17 1980-10-28 Nec Corp Memory circuit

Also Published As

Publication number Publication date
JPS63200390A (ja) 1988-08-18

Similar Documents

Publication Publication Date Title
US4417328A (en) Random access semiconductor memory device using MOS transistors
US5155705A (en) Semiconductor memory device having flash write function
EP0213395A2 (en) Semiconductor memory with static column decode and page mode addressing capability
EP0186906A2 (en) Semiconductor memory attaining high data read speed and having high noise margin
US4718043A (en) Memory circuit with improved power-down control
US5646902A (en) Static random access memory device with low power dissipation
JP3259764B2 (ja) 半導体記憶装置
US5826056A (en) Synchronous memory device and method of reading data from same
US6249468B1 (en) Semiconductor memory device with switching element for isolating bit lines during testing
JPS62287499A (ja) 半導体メモリ装置
US5574695A (en) Semiconductor memory device with bit line load circuit for high speed operation
EP0259862B1 (en) Semiconductor memory with improved write function
US4858183A (en) ECL high speed semiconductor memory and method of accessing stored information therein
JPH07211077A (ja) 半導体記憶装置
JPS6249676B2 (cs)
KR910014938A (ko) 향상된 di/dt 제어가 가능한 집적회로 메모리
JPS6118836B2 (cs)
JP2557337B2 (ja) 半導体記憶装置
EP0199458B1 (en) Memory circuit having an improved writing scheme
JPH034993B2 (cs)
US6058068A (en) Write driver with locally generated reset pulse
JP3064561B2 (ja) 半導体記憶装置
JPH0135438B2 (cs)
JPS60119691A (ja) メモリ回路
US4719597A (en) Driving circuit for a shared sense amplifier with increased speed clock generation circuit for reading addressed memory cells