JPH0346233A - Manufacture of bump - Google Patents
Manufacture of bumpInfo
- Publication number
- JPH0346233A JPH0346233A JP1181336A JP18133689A JPH0346233A JP H0346233 A JPH0346233 A JP H0346233A JP 1181336 A JP1181336 A JP 1181336A JP 18133689 A JP18133689 A JP 18133689A JP H0346233 A JPH0346233 A JP H0346233A
- Authority
- JP
- Japan
- Prior art keywords
- bump
- photoresist
- bumps
- substrate
- barrier metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 230000004888 barrier function Effects 0.000 abstract description 7
- 235000001674 Agaricus brunnescens Nutrition 0.000 abstract description 4
- 238000002161 passivation Methods 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 6
- 241000121220 Tricholoma matsutake Species 0.000 description 5
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 2
- 235000011613 Pinus brutia Nutrition 0.000 description 2
- 241000018646 Pinus brutia Species 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体チップのような半導体装置を基板に取り
付ける際に使用されるバンプの製造方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing bumps used when attaching a semiconductor device such as a semiconductor chip to a substrate.
（従来の技術）
テープキャリア方式、７リツプチツプ方式等にかいてチ
ップを基板に取り付ける際バンプが使用されてかり、通
常はチップのパッド上に形成されているが、フィンガー
の先端に形成される場合もある。(Prior art) Bumps are used when attaching a chip to a substrate using the tape carrier method, 7-lip chip method, etc., and are usually formed on the pads of the chip, but in some cases they are formed on the tips of fingers. There is also.
第２図及び第８図はチップのパッド上に形成し九例であ
って、第２図はバンプの断面形状がマツシュルーム形状
の場合であり、第３図はバンプの断面の壁面が垂直の場
合である。両図に訃いて、例えばシリコンのような基板
１の表面には回路が形成され、端子の部分には例えばＡ
ｔのような金属によりパッド８が設けられ、その上にバ
リヤ金属４を介してメツキによりバンプ５が形成される
。Figures 2 and 8 show nine examples of bumps formed on the pads of a chip. Figure 2 shows the case where the cross-sectional shape of the bump is a mushroom shape, and Figure 3 shows the case where the wall surface of the cross-section of the bump is vertical. It is. In both figures, a circuit is formed on the surface of a substrate 1 made of, for example, silicon, and a circuit is formed on the surface of the substrate 1, for example, A.
A pad 8 is provided with a metal such as T, and a bump 5 is formed thereon by plating with a barrier metal 4 interposed therebetween.
前記のバンプの形状は、メツキ形成するときの７オトレ
ジストの膜厚で決定される。すなわち、フォトレジスト
の膜厚がバンプの高さより小さい場合は、＠２図のよう
なマツシュルーム状となり、７オトレジストの膜厚がバ
ンプの高さより大きいと第８図のような壁面が垂直のも
のとなる。なおバンプ以外の部分は絶ａ！２によって覆
われている。The shape of the bump is determined by the thickness of the 7-photoresist when plating is formed. In other words, if the thickness of the photoresist is smaller than the height of the bump, it will become like a pine mushroom as shown in Figure 2, and if the thickness of the photoresist is larger than the height of the bump, the wall will be vertical as shown in Figure 8. Become. The parts other than the bumps are absolutely perfect! covered by 2.
（発明が解決しようとする課題）
バンプの高さは、外部回路と接続のため、約２０μｍ必
要であるが、５第２図のようなマツシュルーム状のもの
を形成するときは、フォトレジストの厚さが通常２〜３
μｍ位であり、バンプの高さより小さい。従って、パッ
ド上のフォトレジストを除去し、メツキによりバンプを
形成すると、パッド上に高さ方向に成長するが、フォト
レジストの表面にも横方向に成長する。このため、隣の
バンプとのシ璽−トを防ぐには、横方向の成長弁だけ、
すなわち、バンプ高さ２０ ／７ ｍ、フォトレジスト
厚２μｍとして横方向の成長弁１８μｍの２倍以上の約
４０ｐｍ、隣のバンプとの間を離す必要がある。従って
、バンブ電極数が多くなると、チップサイズが大きくな
り不利である。また、フォトレジストが薄いため、工程
の途中で摩擦により剥離が生じる虞れがある。(Problem to be Solved by the Invention) The height of the bump needs to be approximately 20 μm for connection with an external circuit, but when forming a mushroom-shaped bump as shown in Figure 2, the thickness of the photoresist must be Saga is usually 2-3
It is on the order of μm, which is smaller than the height of the bump. Therefore, when the photoresist on the pad is removed and a bump is formed by plating, bumps grow on the pad in the height direction, but also grow laterally on the surface of the photoresist. Therefore, in order to prevent the bump from colliding with the adjacent bump, only the lateral growth valve is required.
That is, assuming a bump height of 20/7 m and a photoresist thickness of 2 μm, it is necessary to space the adjacent bumps by about 40 pm, which is more than twice the horizontal growth valve of 18 μm. Therefore, as the number of bump electrodes increases, the chip size increases, which is disadvantageous. Furthermore, since the photoresist is thin, there is a risk that it may peel off due to friction during the process.
第８図のような壁面が垂直のバンプは、通常ネガタイプ
の７オトレジストの厚さをバンプの高さより大きくして
形成する。バンプの高さを２０μｍとすると、フォトレ
ジストの厚さは２５〜８０μｍ必要となる。この厚いフ
ォトレジストに穴ヲ明けてパッドの上にメツキするので
あるが、このとき、メツキ液が穴明けされた部分に十分
に入り込めず、メツキが付着しないことがある。またフ
ォトレジストを現像し不要な部分を除去して穴を明ける
とき、フォトレジストがう１く除去されず、スカムと呼
ばれるレジスト残渣が残る。そのため、現像の後に通常
スカム除去工程が必要となる。Bumps with vertical walls as shown in FIG. 8 are usually formed by using negative type 7 photoresist with a thickness greater than the height of the bumps. If the bump height is 20 μm, the photoresist needs to have a thickness of 25 to 80 μm. Holes are drilled in this thick photoresist and plated onto the pads, but at this time, the plating solution may not be able to fully penetrate into the drilled areas, and the plating may not adhere. Furthermore, when the photoresist is developed and unnecessary portions are removed to create holes, the photoresist is not removed any further and a resist residue called scum remains. Therefore, a scum removal step is usually required after development.
以上のようにマツシュルーム状のバンプは、接続される
部分の面積は広くなるが、チップサイズが大きくなり、
工程上の事故の危険性があり、壁面垂直のバンプは横方
向に成長しないので、チップサイズは小さくなるが、工
程が多くなりかつ事故の危険性がある。As mentioned above, the pine mushroom-shaped bump increases the area of the connected part, but it also increases the chip size.
There is a risk of an accident during the process, and since bumps perpendicular to the wall surface do not grow laterally, the chip size becomes smaller, but the number of steps increases and there is a risk of an accident.
（課題を解決するための手段）
バンプを形成するとき基板上に塗布する７オトレジスト
の厚さを５μｍ以上でかつバンプの高さより小さくした
。(Means for Solving the Problems) When forming bumps, the thickness of the 7-photoresist coated on the substrate was set to 5 μm or more and smaller than the height of the bumps.
（作 用）
以上のようにすることにより、バンプの横方向の成長を
小さくすることができ、しかもマツシュルーム状のバン
プを形成することができる。(Function) By doing as described above, it is possible to reduce the growth of the bump in the lateral direction, and moreover, it is possible to form the bump in the shape of a pine mushroom.
（実施例）
ｗ、１図は本発明の一実施例の断面図である。基板真の
表面のパッド８及びパシベイシ璽ン用の絶縁膜２の表面
に例えばスパッタリングによりバリヤ金Ｍ４の被膜を設
ける。次にポジタイプ又はネガタイプの７オトレジスト
６を全面に例えば１５μｍの厚さに塗布し、フォトリン
グラフィによりパッド８の上部にバリヤ金属４に達する
穴を明け、この部分にバンブ金属例えばＡｕを２０μｍ
の厚さにメツキする。その後点線で示されるフォトレジ
スト６及びバンプ以外の部分のバリヤ金属４を除去する
と、第１図の実線で示されるようなバンプ５が形成され
る。この場合マツシュルーム状のバンプ５の頂部の張り
出しは約５μｍとなる。張り出しの大きさが小さ過ぎる
と、接触面積が小さくなるので、約５μｍ以上が望まし
い。(Embodiment) Figure 1 is a sectional view of an embodiment of the present invention. A film of barrier gold M4 is provided on the pad 8 on the real surface of the substrate and on the surface of the insulating film 2 for passivation by sputtering, for example. Next, a positive type or negative type 7 photoresist 6 is applied to a thickness of, for example, 15 μm over the entire surface, a hole is made in the upper part of the pad 8 to reach the barrier metal 4 by photolithography, and a bump metal such as Au is applied to this part to a thickness of 20 μm.
Plate to the thickness of . Thereafter, by removing the photoresist 6 shown by dotted lines and the barrier metal 4 in areas other than the bumps, bumps 5 as shown by solid lines in FIG. 1 are formed. In this case, the protrusion of the top of the pine mushroom-shaped bump 5 is about 5 μm. If the size of the protrusion is too small, the contact area will become small, so it is preferably about 5 μm or more.
（発明の効果）
従来の方法であれば、マツシュルーム状のバンプを形成
するとき、隣のバンプとの間隔を約５μｍ以上離さなけ
ればならなかったものを、本発明によれば約５μｍ以上
迄短かくすることができる。また、本発明によれば、７
オトレジストの厚さが比較的大きいため、剥離すること
が少なく、また、穴が浅いのでメツキ液が穴に入り易く
、また、スカム除去の必要もなくなる。(Effects of the Invention) With the conventional method, when forming a bump in the shape of a pine mushroom, the distance between adjacent bumps had to be approximately 5 μm or more, but according to the present invention, the distance between adjacent bumps has been reduced to approximately 5 μm or more. It is possible to do this. Further, according to the present invention, 7
Since the thickness of the photoresist is relatively large, it is less likely to peel off, and since the holes are shallow, the plating solution can easily enter the holes, and there is no need to remove scum.
更に、現在主流であるマツシュルーム状バンプ用のポジ
タイプフォトレジストの既存設備がその１１使用できる
。すなわち、フォトレジストの厚さを２０μｍ以上とす
る場合、レジストの種類はネガタイプとなるが、１５１
ｔ ｍ程度筐でであればポジタイプのレジストで対応で
きる。従って、従来のマツシュルーム状のバンプ形成に
用いられていたポジタイプ用の設備が利用できる。Furthermore, existing equipment for positive type photoresist for pine mushroom bumps, which is currently the mainstream, can be used. In other words, when the thickness of the photoresist is 20 μm or more, the type of resist is negative type, but 151
If the case is about tm, a positive type resist can be used. Therefore, it is possible to use the positive type equipment that has been used in the conventional formation of bumps in the form of pine mushrooms.
な釦、本発明によれば、例えば４００ビンのチップでは
、チップサイズが一辺あたり約３ＩＩＩＩ＋も小さくで
き、大幅なコストダウンとなる。According to the present invention, for example, in a 400-bin chip, the chip size can be reduced by about 3III+ per side, resulting in a significant cost reduction.
第１図は本発明の一実施例によるバンプの断面図、第２
図及び第３図は従来のバンプの断面図である。FIG. 1 is a sectional view of a bump according to an embodiment of the present invention, and FIG.
3 and 3 are cross-sectional views of conventional bumps.
Claims (1)
ジストの厚さを５μｍ以上でかつバンプの高さより小さ
くしたことを特徴とするバンプの製造方法。1. A method for manufacturing a bump, characterized in that when forming the bump, the thickness of the photoresist applied on the substrate is 5 μm or more and smaller than the height of the bump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01181336A JP3027586B2 (en) | 1989-07-13 | 1989-07-13 | Manufacturing method of bump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01181336A JP3027586B2 (en) | 1989-07-13 | 1989-07-13 | Manufacturing method of bump |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0346233A true JPH0346233A (en) | 1991-02-27 |
| JP3027586B2 JP3027586B2 (en) | 2000-04-04 |
Family
ID=16098917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01181336A Expired - Fee Related JP3027586B2 (en) | 1989-07-13 | 1989-07-13 | Manufacturing method of bump |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3027586B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100382377B1 (en) * | 1999-06-10 | 2003-05-01 | 엔이씨 일렉트로닉스 코포레이션 | Bump transfer plate, manufacturing method thereof, semiconductor device, and manufacturing method thereof |
| KR100534219B1 (en) * | 1999-07-02 | 2005-12-08 | 후지쯔 가부시끼가이샤 | Semiconductor device and method of producing the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62266851A (en) * | 1986-05-14 | 1987-11-19 | Nec Corp | Forming method for solder bump electrode |
| JPS6329940A (en) * | 1986-07-23 | 1988-02-08 | Nec Corp | Manufacture of semiconductor device |
| JPS63119550A (en) * | 1986-11-07 | 1988-05-24 | Seiko Instr & Electronics Ltd | Formation of solder bump |
| JPS63237445A (en) * | 1987-03-25 | 1988-10-03 | Nec Corp | Manufacture of semiconductor device |
| JPS6417449A (en) * | 1987-07-10 | 1989-01-20 | Fuji Electric Co Ltd | Formation of bump electrode of semiconductor device |
-
1989
- 1989-07-13 JP JP01181336A patent/JP3027586B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62266851A (en) * | 1986-05-14 | 1987-11-19 | Nec Corp | Forming method for solder bump electrode |
| JPS6329940A (en) * | 1986-07-23 | 1988-02-08 | Nec Corp | Manufacture of semiconductor device |
| JPS63119550A (en) * | 1986-11-07 | 1988-05-24 | Seiko Instr & Electronics Ltd | Formation of solder bump |
| JPS63237445A (en) * | 1987-03-25 | 1988-10-03 | Nec Corp | Manufacture of semiconductor device |
| JPS6417449A (en) * | 1987-07-10 | 1989-01-20 | Fuji Electric Co Ltd | Formation of bump electrode of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100382377B1 (en) * | 1999-06-10 | 2003-05-01 | 엔이씨 일렉트로닉스 코포레이션 | Bump transfer plate, manufacturing method thereof, semiconductor device, and manufacturing method thereof |
| KR100534219B1 (en) * | 1999-07-02 | 2005-12-08 | 후지쯔 가부시끼가이샤 | Semiconductor device and method of producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3027586B2 (en) | 2000-04-04 |
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