JPH0345971U - - Google Patents

Info

Publication number
JPH0345971U
JPH0345971U JP10603089U JP10603089U JPH0345971U JP H0345971 U JPH0345971 U JP H0345971U JP 10603089 U JP10603089 U JP 10603089U JP 10603089 U JP10603089 U JP 10603089U JP H0345971 U JPH0345971 U JP H0345971U
Authority
JP
Japan
Prior art keywords
raw material
material melt
compound semiconductor
single crystal
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10603089U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10603089U priority Critical patent/JPH0345971U/ja
Publication of JPH0345971U publication Critical patent/JPH0345971U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP10603089U 1989-09-08 1989-09-08 Pending JPH0345971U (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10603089U JPH0345971U (enrdf_load_stackoverflow) 1989-09-08 1989-09-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10603089U JPH0345971U (enrdf_load_stackoverflow) 1989-09-08 1989-09-08

Publications (1)

Publication Number Publication Date
JPH0345971U true JPH0345971U (enrdf_load_stackoverflow) 1991-04-26

Family

ID=31654776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10603089U Pending JPH0345971U (enrdf_load_stackoverflow) 1989-09-08 1989-09-08

Country Status (1)

Country Link
JP (1) JPH0345971U (enrdf_load_stackoverflow)

Similar Documents

Publication Publication Date Title
FR2599898B1 (fr) Procede de fabrication d'un element electrochimique et precurseur pour element electrochimique fonctionnant a haute temperature
JPS5580798A (en) Ribbon crystal growing method by lateral pulling
JPH0345971U (enrdf_load_stackoverflow)
JPH05279189A (ja) ルチル単結晶の育成方法
JPS61183971U (enrdf_load_stackoverflow)
JPS61150862U (enrdf_load_stackoverflow)
FR2689524B1 (fr) Procede de fabrication d'un lingot en oxyde supraconducteur a haute temperature critique.
JPS6010197U (ja) 単結晶育成用ルツボ
JPS62270488A (ja) 帯状シリコン結晶の製造装置
JPS62235286A (ja) 単結晶育成用るつぼの製造方法
JPH0647015Y2 (ja) 育成結晶冷却用具
JPS5852292Y2 (ja) 坩堝支持体
JPH0274371U (enrdf_load_stackoverflow)
JPS6155073U (enrdf_load_stackoverflow)
JPH0523583Y2 (enrdf_load_stackoverflow)
JPH0229461U (enrdf_load_stackoverflow)
JPH03120570U (enrdf_load_stackoverflow)
JPH0449185Y2 (enrdf_load_stackoverflow)
JPH0413664U (enrdf_load_stackoverflow)
JPS62203271U (enrdf_load_stackoverflow)
JPS5935878B2 (ja) 半導体単結晶育成法
JPS62265195A (ja) 結晶成長装置
JPS6111918B2 (enrdf_load_stackoverflow)
JPH01149471U (enrdf_load_stackoverflow)
JPS5997591A (ja) 単結晶育成法および装置