JPS6111918B2 - - Google Patents

Info

Publication number
JPS6111918B2
JPS6111918B2 JP21461383A JP21461383A JPS6111918B2 JP S6111918 B2 JPS6111918 B2 JP S6111918B2 JP 21461383 A JP21461383 A JP 21461383A JP 21461383 A JP21461383 A JP 21461383A JP S6111918 B2 JPS6111918 B2 JP S6111918B2
Authority
JP
Japan
Prior art keywords
crystal
width
die
band
shaped silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP21461383A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60108399A (ja
Inventor
Masanaru Abe
Naoaki Maki
Toshiro Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP21461383A priority Critical patent/JPS60108399A/ja
Publication of JPS60108399A publication Critical patent/JPS60108399A/ja
Publication of JPS6111918B2 publication Critical patent/JPS6111918B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP21461383A 1983-11-15 1983-11-15 帯状シリコン結晶の製造装置 Granted JPS60108399A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21461383A JPS60108399A (ja) 1983-11-15 1983-11-15 帯状シリコン結晶の製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21461383A JPS60108399A (ja) 1983-11-15 1983-11-15 帯状シリコン結晶の製造装置

Publications (2)

Publication Number Publication Date
JPS60108399A JPS60108399A (ja) 1985-06-13
JPS6111918B2 true JPS6111918B2 (enrdf_load_stackoverflow) 1986-04-05

Family

ID=16658620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21461383A Granted JPS60108399A (ja) 1983-11-15 1983-11-15 帯状シリコン結晶の製造装置

Country Status (1)

Country Link
JP (1) JPS60108399A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS60108399A (ja) 1985-06-13

Similar Documents

Publication Publication Date Title
DE69832846T2 (de) Verfahren und Vorrichtung zur Herstellung polykristalliner Halbleiter-blöcke
US4329195A (en) Lateral pulling growth of crystal ribbons
US4594229A (en) Apparatus for melt growth of crystalline semiconductor sheets
US3759671A (en) Horizontal growth of crystal ribbons
DE10157453A1 (de) Vorrichtung zum Aufwachsen eines einkristallinen Rohlings
US4121965A (en) Method of controlling defect orientation in silicon crystal ribbon growth
DE19806045A1 (de) Verfahren zum Herstellen von einkristallinen Siliziumstäben und Siliziumwafern unter Steuern des Ziehgeschwindigkeitsverlaufs in einem Heißzonenofen, sowie mit dem Verfahren hergestellte Stäbe und Wafer
EP0072565A2 (de) Verfahren zur Herstellung grob- bis einkristalliner Folien aus Halbleitermaterial
DE1254131B (de) Verfahren zur Regelung der Dicke flacher, dendritischer Kristalle aus Silicium, Germanium oder Halbleiterverbindungen beim kontinuierlichen Ziehen aus einer Schmelze
US4022652A (en) Method of growing multiple monocrystalline layers
US4544528A (en) Apparatus for growing tubular crystalline bodies
US3681033A (en) Horizontal growth of crystal ribbons
GB2103105A (en) Crystal growing
DE69716385T2 (de) Verfahren und Vorrichtung zur kontinuierlichen Herstellung von Feststoffen
US3977934A (en) Silicon manufacture
US3795488A (en) Method for producing crystal boules with extensive flat, parallel facets
DE3322685A1 (de) Verfahren zur herstellung eines bandes aus polykristallinem silizium
JPS6111918B2 (enrdf_load_stackoverflow)
US3298795A (en) Process for controlling dendritic crystal growth
CN101128625A (zh) 用于生长薄半导体带的方法
DE2604351A1 (de) Verfahren zur herstellung von halbleiteranordnungen, bei dem eine halbleitermaterialschicht auf einem substrat angebracht wird, vorrichtung zum durchfuehren dieses verfahrens und durch dieses verfahren hergestellte halbleiteranordnungen
US3996094A (en) Silicon manufacture
JPS6111914B2 (enrdf_load_stackoverflow)
JPS6111917B2 (enrdf_load_stackoverflow)
JPS5932434B2 (ja) 帯状シリコン結晶の製造装置