JPS60108399A - 帯状シリコン結晶の製造装置 - Google Patents
帯状シリコン結晶の製造装置Info
- Publication number
- JPS60108399A JPS60108399A JP21461383A JP21461383A JPS60108399A JP S60108399 A JPS60108399 A JP S60108399A JP 21461383 A JP21461383 A JP 21461383A JP 21461383 A JP21461383 A JP 21461383A JP S60108399 A JPS60108399 A JP S60108399A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- width
- slit
- die
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title description 5
- 230000000630 rising effect Effects 0.000 claims abstract description 5
- 239000000155 melt Substances 0.000 claims abstract description 4
- 230000001276 controlling effect Effects 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 12
- 238000007796 conventional method Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 101100008049 Caenorhabditis elegans cut-5 gene Proteins 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21461383A JPS60108399A (ja) | 1983-11-15 | 1983-11-15 | 帯状シリコン結晶の製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21461383A JPS60108399A (ja) | 1983-11-15 | 1983-11-15 | 帯状シリコン結晶の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60108399A true JPS60108399A (ja) | 1985-06-13 |
| JPS6111918B2 JPS6111918B2 (enrdf_load_stackoverflow) | 1986-04-05 |
Family
ID=16658620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21461383A Granted JPS60108399A (ja) | 1983-11-15 | 1983-11-15 | 帯状シリコン結晶の製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60108399A (enrdf_load_stackoverflow) |
-
1983
- 1983-11-15 JP JP21461383A patent/JPS60108399A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6111918B2 (enrdf_load_stackoverflow) | 1986-04-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE10157453B4 (de) | Vorrichtung zum Aufwachsen eines einkristallinen Rohlings | |
| Surek | Theory of shape stability in crystal growth from the melt | |
| US6045610A (en) | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance | |
| US6472040B1 (en) | Semi-pure and pure monocrystalline silicon ingots and wafers | |
| US4121965A (en) | Method of controlling defect orientation in silicon crystal ribbon growth | |
| JP2705867B2 (ja) | シリコン棒の製造方法 | |
| DE102009033667B4 (de) | Verfahren zum Züchten eines Halbleitereinkristalls und Vorrichtung zur Durchführung des Verfahrens | |
| US3977934A (en) | Silicon manufacture | |
| US4957712A (en) | Apparatus for manufacturing single silicon crystal | |
| US4469552A (en) | Process and apparatus for growing a crystal ribbon | |
| JPS60108399A (ja) | 帯状シリコン結晶の製造装置 | |
| US20130213296A1 (en) | Method for achieving sustained anisotropic crystal growth on the surface of a melt | |
| JP2005082474A (ja) | シリコン単結晶の製造方法 | |
| JPS63252989A (ja) | 引上法による半導体単結晶の製造方法 | |
| JPS6111917B2 (enrdf_load_stackoverflow) | ||
| JPS6251918B2 (enrdf_load_stackoverflow) | ||
| JPS5914433B2 (ja) | 帯状シリコン結晶の製造装置 | |
| JP2622274B2 (ja) | 単結晶の育成方法 | |
| JPS6111916B2 (enrdf_load_stackoverflow) | ||
| JPS5912636B2 (ja) | リボン状単結晶の引上げ方法 | |
| JPS5914435B2 (ja) | 帯状シリコン結晶の製造装置 | |
| DE112020006312T5 (de) | Herstellungsverfahren für Silicium-Einkristall, Silicium-Einkristall und Siliciumwafer | |
| JPS59232996A (ja) | 単結晶引上装置 | |
| JP2535773B2 (ja) | 酸化物単結晶の製造方法とその装置 | |
| JPS63233095A (ja) | ３−５族化合物半導体単結晶の製造方法 |