JPS60108399A - 帯状シリコン結晶の製造装置 - Google Patents

帯状シリコン結晶の製造装置

Info

Publication number
JPS60108399A
JPS60108399A JP21461383A JP21461383A JPS60108399A JP S60108399 A JPS60108399 A JP S60108399A JP 21461383 A JP21461383 A JP 21461383A JP 21461383 A JP21461383 A JP 21461383A JP S60108399 A JPS60108399 A JP S60108399A
Authority
JP
Japan
Prior art keywords
crystal
width
band
die
shaped silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21461383A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6111918B2 (enrdf_load_stackoverflow
Inventor
Masanaru Abe
阿部　昌匠
Naoaki Maki
真木　直明
Toshiro Matsui
松井　都四郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP21461383A priority Critical patent/JPS60108399A/ja
Publication of JPS60108399A publication Critical patent/JPS60108399A/ja
Publication of JPS6111918B2 publication Critical patent/JPS6111918B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP21461383A 1983-11-15 1983-11-15 帯状シリコン結晶の製造装置 Granted JPS60108399A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21461383A JPS60108399A (ja) 1983-11-15 1983-11-15 帯状シリコン結晶の製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21461383A JPS60108399A (ja) 1983-11-15 1983-11-15 帯状シリコン結晶の製造装置

Publications (2)

Publication Number Publication Date
JPS60108399A true JPS60108399A (ja) 1985-06-13
JPS6111918B2 JPS6111918B2 (enrdf_load_stackoverflow) 1986-04-05

Family

ID=16658620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21461383A Granted JPS60108399A (ja) 1983-11-15 1983-11-15 帯状シリコン結晶の製造装置

Country Status (1)

Country Link
JP (1) JPS60108399A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6111918B2 (enrdf_load_stackoverflow) 1986-04-05

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