JPS6111917B2 - - Google Patents

Info

Publication number
JPS6111917B2
JPS6111917B2 JP15376283A JP15376283A JPS6111917B2 JP S6111917 B2 JPS6111917 B2 JP S6111917B2 JP 15376283 A JP15376283 A JP 15376283A JP 15376283 A JP15376283 A JP 15376283A JP S6111917 B2 JPS6111917 B2 JP S6111917B2
Authority
JP
Japan
Prior art keywords
crystal
die
band
width
shaped silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15376283A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6046996A (ja
Inventor
Masanaru Abe
Toshiro Matsui
Naoaki Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP15376283A priority Critical patent/JPS6046996A/ja
Publication of JPS6046996A publication Critical patent/JPS6046996A/ja
Publication of JPS6111917B2 publication Critical patent/JPS6111917B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP15376283A 1983-08-23 1983-08-23 帯状シリコン結晶製造装置 Granted JPS6046996A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15376283A JPS6046996A (ja) 1983-08-23 1983-08-23 帯状シリコン結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15376283A JPS6046996A (ja) 1983-08-23 1983-08-23 帯状シリコン結晶製造装置

Publications (2)

Publication Number Publication Date
JPS6046996A JPS6046996A (ja) 1985-03-14
JPS6111917B2 true JPS6111917B2 (enrdf_load_stackoverflow) 1986-04-05

Family

ID=15569572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15376283A Granted JPS6046996A (ja) 1983-08-23 1983-08-23 帯状シリコン結晶製造装置

Country Status (1)

Country Link
JP (1) JPS6046996A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6046996A (ja) 1985-03-14

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