JPS6046996A - 帯状シリコン結晶製造装置 - Google Patents
帯状シリコン結晶製造装置Info
- Publication number
- JPS6046996A JPS6046996A JP15376283A JP15376283A JPS6046996A JP S6046996 A JPS6046996 A JP S6046996A JP 15376283 A JP15376283 A JP 15376283A JP 15376283 A JP15376283 A JP 15376283A JP S6046996 A JPS6046996 A JP S6046996A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- width
- cuts
- die
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000000630 rising effect Effects 0.000 claims description 3
- 238000007711 solidification Methods 0.000 abstract description 7
- 230000008023 solidification Effects 0.000 abstract description 7
- 239000000155 melt Substances 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000008713 feedback mechanism Effects 0.000 description 1
- 208000021267 infertility disease Diseases 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15376283A JPS6046996A (ja) | 1983-08-23 | 1983-08-23 | 帯状シリコン結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15376283A JPS6046996A (ja) | 1983-08-23 | 1983-08-23 | 帯状シリコン結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6046996A true JPS6046996A (ja) | 1985-03-14 |
| JPS6111917B2 JPS6111917B2 (enrdf_load_stackoverflow) | 1986-04-05 |
Family
ID=15569572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15376283A Granted JPS6046996A (ja) | 1983-08-23 | 1983-08-23 | 帯状シリコン結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6046996A (enrdf_load_stackoverflow) |
-
1983
- 1983-08-23 JP JP15376283A patent/JPS6046996A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6111917B2 (enrdf_load_stackoverflow) | 1986-04-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3872290T2 (de) | Verfahren zur regelung des kristalldurchmessers. | |
| DE10157453A1 (de) | Vorrichtung zum Aufwachsen eines einkristallinen Rohlings | |
| DE69202996T2 (de) | Verfahren zur automatischen Steuerung der Züchtung des Halsteiles eines Einkristalles. | |
| DE2633961A1 (de) | Verfahren zum zuechten eines duennen kristallbands | |
| JP2705867B2 (ja) | シリコン棒の製造方法 | |
| US5268061A (en) | Method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation | |
| JPS6046996A (ja) | 帯状シリコン結晶製造装置 | |
| DE102006052961B4 (de) | Verfahren zur Herstellung eines Halbleiterkristalls | |
| US3298795A (en) | Process for controlling dendritic crystal growth | |
| JP2001316199A (ja) | シリコン単結晶の製造方法及びシリコン単結晶の製造装置 | |
| US5431124A (en) | Rutile single crystals and their growth processes | |
| JP6540583B2 (ja) | 単結晶の製造方法および装置 | |
| JPS60108399A (ja) | 帯状シリコン結晶の製造装置 | |
| JPS5914433B2 (ja) | 帯状シリコン結晶の製造装置 | |
| JPS6283395A (ja) | 単結晶引上装置の直径制御方法 | |
| TWI650448B (zh) | 藉由浮區法提拉單晶的方法及設備 | |
| JPS6111914B2 (enrdf_load_stackoverflow) | ||
| KR101565674B1 (ko) | 실리콘 단결정 잉곳 성장 방법 | |
| EP3957774B1 (de) | Verfahren und anlage zum ziehen eines einkristalls nach dem fz-verfahren | |
| JP2617263B2 (ja) | マルチドープｆｚ単結晶棒製造方法 | |
| US20240218556A1 (en) | Method, apparatus, system and computer storage medium of controlling crystal growth | |
| JPS55140795A (en) | Automatic crystal growing device | |
| US5948159A (en) | Method of controlling defects of a silicon single crystal | |
| US4603034A (en) | Crystal growing system | |
| JPS5914435B2 (ja) | 帯状シリコン結晶の製造装置 |