JPS6046996A - 帯状シリコン結晶製造装置 - Google Patents

帯状シリコン結晶製造装置

Info

Publication number
JPS6046996A
JPS6046996A JP15376283A JP15376283A JPS6046996A JP S6046996 A JPS6046996 A JP S6046996A JP 15376283 A JP15376283 A JP 15376283A JP 15376283 A JP15376283 A JP 15376283A JP S6046996 A JPS6046996 A JP S6046996A
Authority
JP
Japan
Prior art keywords
band
shaped silicon
crystal
die
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15376283A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6111917B2 (enrdf_load_stackoverflow
Inventor
Masanaru Abe
阿部　昌匠
Toshiro Matsui
松井　都四郎
Naoaki Maki
真木　直明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15376283A priority Critical patent/JPS6046996A/ja
Publication of JPS6046996A publication Critical patent/JPS6046996A/ja
Publication of JPS6111917B2 publication Critical patent/JPS6111917B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP15376283A 1983-08-23 1983-08-23 帯状シリコン結晶製造装置 Granted JPS6046996A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15376283A JPS6046996A (ja) 1983-08-23 1983-08-23 帯状シリコン結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15376283A JPS6046996A (ja) 1983-08-23 1983-08-23 帯状シリコン結晶製造装置

Publications (2)

Publication Number Publication Date
JPS6046996A true JPS6046996A (ja) 1985-03-14
JPS6111917B2 JPS6111917B2 (enrdf_load_stackoverflow) 1986-04-05

Family

ID=15569572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15376283A Granted JPS6046996A (ja) 1983-08-23 1983-08-23 帯状シリコン結晶製造装置

Country Status (1)

Country Link
JP (1) JPS6046996A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6111917B2 (enrdf_load_stackoverflow) 1986-04-05

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