JPH0345778B2 - - Google Patents
Info
- Publication number
- JPH0345778B2 JPH0345778B2 JP58240904A JP24090483A JPH0345778B2 JP H0345778 B2 JPH0345778 B2 JP H0345778B2 JP 58240904 A JP58240904 A JP 58240904A JP 24090483 A JP24090483 A JP 24090483A JP H0345778 B2 JPH0345778 B2 JP H0345778B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- thermoelectric
- sensor
- cold junction
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 claims description 27
- 230000005679 Peltier effect Effects 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 23
- 238000001816 cooling Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は非接触式温度検出装置に関するもの
で、例えば複写機の定着装置における加熱ロール
等の被測定物から放射される放射エネルギを検出
するに際して、センサの冷接点温度を被測定物の
温度に応じて任意に制御して、温度検出能力の増
大及び安定した温度検出を可能にすることを特徴
とする非接触式温度検出装置に関するものであ
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a non-contact temperature detection device, which detects radiant energy emitted from an object to be measured, such as a heating roll in a fixing device of a copying machine, for example. The present invention relates to a non-contact temperature detection device characterized in that the cold junction temperature of the sensor is arbitrarily controlled according to the temperature of the object to be measured, thereby increasing temperature detection capability and making stable temperature detection possible. be.
従来、複写機の定着装置として、加熱ロール
と、加圧ロールとで粉体トナー像をシートに加熱
及び加圧定着させるロール型加熱定着装置が広く
用いられている。また、この種ロール型加熱定着
装置の高温表面、特に加熱ロール表面の温度検知
には、接触式センサと、非接触式センサのいずれ
かが用いられているが、後者すなわち非接触式セ
ンサは、接触式に比べて、加熱ロールの摩耗、セ
ンサの摩耗、寿命の点で有利である。特に、熱容
量を小さくした加熱ロールを用いて所定の設定温
度の立上り時間を短くした場合には温度の変化速
度が大きく、従来の接触式センサではその応答が
悪くすなわち時定数が大きく加熱ロールの温度を
一定に保つことが困難であつたが、非接触式温度
センサ具体的に言えば非接触赤外線温度センサを
用いることにより、センサの時定数を小さくで
き、所定の温度制御性能を得ることが可能となつ
た。
2. Description of the Related Art Conventionally, as a fixing device for a copying machine, a roll-type heat fixing device is widely used, which uses a heating roll and a pressure roll to heat and pressure fix a powder toner image onto a sheet. In addition, to detect the temperature of the high-temperature surface of this type of roll-type heat fixing device, especially the surface of the heating roll, either a contact sensor or a non-contact sensor is used. Compared to the contact type, it is advantageous in terms of heating roll wear, sensor wear, and lifespan. In particular, when a heating roll with a small heat capacity is used to shorten the rise time of a predetermined set temperature, the rate of temperature change is large, and with conventional contact sensors, the response is poor, that is, the time constant is large, and the heating roll temperature However, by using a non-contact temperature sensor, specifically a non-contact infrared temperature sensor, it is possible to reduce the sensor time constant and obtain the desired temperature control performance. It became.
上記赤外線温度センサは大きく分けて熱電型セ
ンサと焦電型センサの２種類があり、この場合、
前者の熱電型センサは、被測定物が放射する赤外
光を受感部に集光させ、熱吸収で生じた温度勾配
を熱電対を使つて熱起電力として検出するととも
に、温度を測定する機能を有している。したがつ
て、焦電型センサのように、受光することによつ
て温度上昇した時に生ずる電荷をチヨツパを置く
ことによつて断続的に信号として取り出す方式よ
りも構成が簡単であり、更に、受感部の熱容量さ
え少なくすれば、焦電型より応答が良いことなど
より、定着装置の温度センサとしては熱電型のセ
ンサの方が優れている。 The infrared temperature sensors mentioned above can be roughly divided into two types: thermoelectric sensors and pyroelectric sensors.
The former type of thermoelectric sensor focuses infrared light emitted by the object to be measured on a sensing part, uses a thermocouple to detect the temperature gradient caused by heat absorption as thermoelectromotive force, and measures the temperature. It has a function. Therefore, it has a simpler configuration than a pyroelectric sensor, which uses a chipper to intermittently extract the electric charge generated when the temperature rises by receiving light as a signal. Thermoelectric sensors are better as temperature sensors for fixing devices because they have better response than pyroelectric sensors as long as the heat capacity of the sensing part is reduced.
上記熱電型温度センサは、第１図に示すよう
に、厚さ約２mm、一辺４mm角のシリコン基板１上
に長さ0.6mm、線の巾0.02mmのインジウムアンチ
モン、テルルからなる54対の熱電対２が受感部３
の回りに蒸着されている。また、受感部３の応答
性改善のために、受感部３のシリコン基板１を異
方性エツチングにて３〜4μm厚の薄肉として熱容
量を極度に減少してある。このため、応答速度は
約30msであり、一般の焦電型センサより優れて
いる。 As shown in Figure 1, the thermoelectric temperature sensor described above consists of 54 pairs of thermoelectric elements made of indium antimony and tellurium, each having a length of 0.6 mm and a wire width of 0.02 mm, mounted on a silicon substrate 1 approximately 2 mm thick and 4 mm square. Pair 2 is sensing part 3
is deposited around the Furthermore, in order to improve the responsiveness of the sensing section 3, the silicon substrate 1 of the sensing section 3 is thinned to a thickness of 3 to 4 .mu.m by anisotropic etching to extremely reduce the heat capacity. Therefore, the response speed is approximately 30ms, which is superior to general pyroelectric sensors.
上記のように構成される熱電型センサで加熱ロ
ールの温度を検出する場合、センサとロールとの
設定距離はセンサの視野角を考慮すると、５〜30
mm程度になるのが普通である。一般にロール温度
は160〜200℃程度であるため、上記設定距離では
長時間ロールを加熱していた場合ロールからの輻
射対流によりセンサ全体（冷接点部も含まれる）
が50〜80℃に加熱してしまう。 When detecting the temperature of the heating roll with a thermoelectric sensor configured as above, the set distance between the sensor and the roll is 5 to 30 mm, considering the viewing angle of the sensor.
It is normal that it is about mm. Generally, the roll temperature is about 160 to 200℃, so if the roll is heated for a long time at the above setting distance, the entire sensor (including the cold junction) will be affected by radiation convection from the roll.
will heat up to 50-80℃.
ところが、加熱直後は未だセンサは暖まつてお
らず、雰囲気温度に等しいことを考えると、セン
サの冷接点部は最大60〜70℃の温度変化が与えら
れることが判る。したがつて、一般に熱電対２
は、両接点（温接点と冷接点）の温度差を熱起電
力として測るため、冷接点の温度が変わると、検
知温度が変わつてしまうのである。そこで、この
冷接点の温度を補償するために冷接点温度補償用
ダイオード４を冷接点近傍に設け、たとえ冷接点
の温度が変化しても、温接点の温度が変わらなけ
れば常に一定の出力が生ずる方式が提案されてい
る。この方式によれば、定着装置の温度を常に一
定に制御することが可能となる。 However, immediately after heating, the sensor has not warmed up yet, and considering that the temperature is equal to the ambient temperature, it can be seen that the cold junction part of the sensor is subject to a maximum temperature change of 60 to 70°C. Therefore, generally thermocouple 2
measures the temperature difference between the two contacts (hot and cold junctions) as a thermoelectromotive force, so if the temperature of the cold junction changes, the detected temperature will change. Therefore, in order to compensate for the temperature of this cold junction, a cold junction temperature compensation diode 4 is installed near the cold junction, so that even if the temperature of the cold junction changes, as long as the temperature of the hot junction does not change, the output will always be constant. A method has been proposed to generate the results. According to this method, it is possible to always control the temperature of the fixing device to be constant.
しかし、熱電型センサの性質上、同じ温接点温
度においても冷接点温度が高い程信号として取り
出せる起電力は小さくなり、センサの検出能力は
低下する。このことは、雰囲気温度が高くなるに
従いロールの温度の検出能力は低下してしまうこ
とを意味する。 However, due to the nature of thermoelectric sensors, even at the same hot junction temperature, the higher the cold junction temperature, the smaller the electromotive force that can be extracted as a signal, and the detection ability of the sensor decreases. This means that the ability to detect the temperature of the roll decreases as the ambient temperature increases.
また、温度補償用ダイオードは、温度に対する
出力は非線型であり、加熱ロール等の被測定物の
ある１つの設定温度（検出温度）では安定した温
度制御は可能であるが、加熱ロール等の設定温度
を変えると冷接点温度が変化してしまうので、加
熱ロール等の設定温度を変えるには、補償用ダイ
オードの出力の増幅率も同時に変えなければなら
ない。更にまた、加熱ロールに限らず、雰囲気に
近い温度を有する物を測温する場合、前述のよう
に検出能力は非常に小さくなるため、実際上測温
不可能である。 In addition, the temperature compensation diode has a nonlinear output with respect to temperature, and stable temperature control is possible at one set temperature (detected temperature) of the object to be measured, such as a heating roll. Changing the temperature changes the cold junction temperature, so in order to change the set temperature of the heating roll, etc., the amplification factor of the output of the compensation diode must be changed at the same time. Furthermore, when measuring the temperature of not only a heating roll but also an object having a temperature close to that of the atmosphere, the detection ability becomes extremely small as described above, so that it is practically impossible to measure the temperature.
上記欠点は、冷接点温度を一定に保持できない
こと、及び、温接点と冷接点の温度差が検出能力
以上ないことによるものである。 The above drawbacks are due to the inability to maintain the cold junction temperature constant and the fact that the temperature difference between the hot junction and the cold junction is not greater than the detection capability.
したがつて、上記欠点要因を考慮して温度検出
能力の増大及び安定した温度検出が得られる温度
検出装置の開発が望まれている。 Therefore, it is desired to develop a temperature detection device that can increase temperature detection capability and provide stable temperature detection in consideration of the above-mentioned disadvantageous factors.
本発明は、上記事情に鑑みなされたもので、そ
の目的とするところは、熱電型温度センサの冷接
点温度を被測定物の温度に準じて任意に制御し
て、温度検出能力の増大及び安定した温度検出を
可能にすることを特徴とする非接触式温度検出装
置を提供しようとするものである。
The present invention has been made in view of the above circumstances, and its purpose is to arbitrarily control the cold junction temperature of a thermoelectric temperature sensor according to the temperature of the object to be measured, thereby increasing and stabilizing the temperature detection capability. The object of the present invention is to provide a non-contact temperature detection device that is characterized by being capable of detecting temperature in a manner similar to that described above.
すなわち、本発明の要旨とするところは、被測
定物が放射する赤外線を受感部に集光させ、該受
感部の熱吸収で生じた冷接点部に対する温度勾配
で生じた起電力により前記被測定物の温度を検出
する熱電型センサを有する非接触式温度検出装置
において、前記熱電型センサの冷接点部を冷却す
るペルチエ効果を利用した熱電素子を設け、前記
熱電型センサの冷接点部の温度を検出する温度補
償用ダイオードを設け、該温度補償用ダイオード
は、前記熱電型センサの出力側に接続されて該温
度補償用ダイオードの出力で前記熱電型センサの
出力を補正するとともに、該温度補償用ダイオー
ドの出力に基づいて前記熱電素子を冷接点部の設
定温度に保つ操作回路に接続されており、かつ該
操作回路は前記熱電素子の冷接点部定温度を任意
に変える手段を有してなることを特徴とする非接
触式温度検出装置に関するものである。
That is, the gist of the present invention is to condense infrared rays emitted by the object to be measured onto a sensing section, and to generate an electromotive force due to a temperature gradient with respect to a cold contact section caused by heat absorption of the sensing section. In a non-contact temperature detection device having a thermoelectric sensor for detecting the temperature of a measured object, a thermoelectric element utilizing the Peltier effect is provided to cool a cold junction part of the thermoelectric sensor, and the cold junction part of the thermoelectric sensor is A temperature compensation diode is provided to detect the temperature of the thermoelectric sensor, and the temperature compensation diode is connected to the output side of the thermoelectric sensor to correct the output of the thermoelectric sensor with the output of the temperature compensation diode. The thermoelectric element is connected to an operating circuit that maintains the set temperature of the cold junction based on the output of the temperature compensation diode, and the operating circuit has means for arbitrarily changing the fixed temperature of the cold junction of the thermoelectric element. The present invention relates to a non-contact temperature detection device characterized by:
以下に本発明の実施例を図面に基づいて詳細に
説明する。
Embodiments of the present invention will be described in detail below based on the drawings.
第２図は本発明の温度検出装置を複写機の定着
装置に使用した場合の概略断面図で、定着装置５
は、互いに転動抵触する加熱ロール６と加圧ロー
ル７とで構成され、これらロール６，７間に搬送
されるシート８のトナー像９を加熱及び加圧によ
つて融着し定着する構造となつている。この場
合、前記加熱ロール６は、直径40mm、長さ400mm
の円筒金属ロール１０の表面に肉厚0.35mmにてシ
リコンRTVゴム１１（放射率0.9）が被覆されて
いる。そして、円筒金属ロール１０の内方に加熱
源である1000Wのハロゲンランプ１２が配設さ
れ、図示しない温度コントロールによつて180℃
に制御されている。なお、１３は加熱ロール６に
付着するシート８を加熱ロール６から剥離するた
めの剥離装装置である。 FIG. 2 is a schematic cross-sectional view when the temperature detection device of the present invention is used in a fixing device of a copying machine.
The structure is composed of a heating roll 6 and a pressure roll 7 that roll against each other, and fuses and fixes the toner image 9 on a sheet 8 conveyed between these rolls 6 and 7 by heating and pressure. It is becoming. In this case, the heating roll 6 has a diameter of 40 mm and a length of 400 mm.
The surface of the cylindrical metal roll 10 is coated with silicone RTV rubber 11 (emissivity 0.9) to a thickness of 0.35 mm. A 1000W halogen lamp 12 as a heating source is installed inside the cylindrical metal roll 10, and the temperature is increased to 180°C by a temperature control (not shown).
is controlled by. Note that 13 is a peeling device for peeling off the sheet 8 adhering to the heating roll 6 from the heating roll 6.
上記のよに構成された定着装置５の温度検出を
行う本発明の温度検出装置１４は、加熱ロール６
の表面から15mm離隔した位置に配置されている。
この場合、本発明の温度検出装置１４は、第３図
に示すように、直径及び長さがそれぞれ１０mmの
円筒型ハウジング１５内に、前記シリコン基板１
上に熱電対２と受感部３を取り付けた熱電型温度
センサすなわち赤外線温度センサ１６を配設する
とともに、このセンサ１６の冷接点部側であるシ
リコン基板１に高熱伝導性のサーマルエポキシ系
接着剤１７にてペルチエ効果を利用した熱電素子
（以下にヒートポンプという）１８が接着され、
このヒートポンプ１８の加熱面側に同様の接着剤
１７をもつて冷却フイン１９が接着されている。
この際冷却フイン１９は、冷却面側で受けた熱を
自然対流にて放熱すると同時に、ハウジングの一
部を構成し、その下部に後述する制御回路部２０
が形成されている。 The temperature detection device 14 of the present invention detects the temperature of the fixing device 5 configured as described above.
It is located 15mm away from the surface.
In this case, as shown in FIG. 3, the temperature detection device 14 of the present invention includes the silicon substrate 1 in a cylindrical housing 15 each having a diameter and a length of 10 mm.
A thermoelectric type temperature sensor, that is, an infrared temperature sensor 16 with a thermocouple 2 and a sensing part 3 attached thereto, is arranged, and a highly thermally conductive thermal epoxy adhesive is attached to the silicon substrate 1 on the cold junction side of the sensor 16. A thermoelectric element (hereinafter referred to as a heat pump) 18 that utilizes the Peltier effect is adhered with an agent 17,
Cooling fins 19 are bonded to the heating surface side of the heat pump 18 using a similar adhesive 17.
At this time, the cooling fins 19 radiate heat received on the cooling surface side by natural convection, and at the same time constitute a part of the housing, and a control circuit section 20 (described later) is provided at the bottom thereof.
is formed.
一方、前記円筒型ハウジング１５の他端には、
被測定物である前記加熱ロール６から放射される
光エネルギ２１を取り入れるための開口２２が形
成され、この開口２２には、可視光線以下の波長
をカツトするためのフイルタ２３が装着されてい
る。 On the other hand, at the other end of the cylindrical housing 15,
An opening 22 is formed to take in the optical energy 21 emitted from the heating roll 6, which is the object to be measured, and a filter 23 is installed in the opening 22 to cut out wavelengths below visible light.
前記ヒートポンプ１８は、第３図及び第４図に
示すように、電気的には直列に、熱的には並列に
形成されるものであつて、例えば、対峙するＰ型
ビスマス半導体２４とＮ型ビスマス半導体２５の
一端（冷接点側）に銅接片電極２６を半田付け
し、また、他端には各々同様に銅接片電極２６，
２６を半田付けし、そして、その電極２６をそれ
ぞれ酸化ベリリウムセラミツク製の絶縁プレート
２７で被覆してある。この場合、絶縁プレート２
７は、高熱伝導性と高絶縁性を兼ね備えたものが
望ましい。 As shown in FIGS. 3 and 4, the heat pump 18 is formed electrically in series and thermally in parallel. A copper contact electrode 26 is soldered to one end (cold contact side) of the bismuth semiconductor 25, and a copper contact electrode 26 is similarly soldered to the other end.
26 are soldered, and each electrode 26 is covered with an insulating plate 27 made of beryllium oxide ceramic. In this case, insulating plate 2
7 desirably has both high thermal conductivity and high insulation properties.
上記のように構成されたヒートポンプ１８は、
基本的には第４図に示す構造となつており、Ｐ型
又はＮ型半導体２４又は２５に別に接続された電
極２６，２６に直流電源２８から印加される数ボ
ルト程度の電圧と、その電流の向きによつて導体
２４，２５の接合側電極２６が冷却されたり、加
熱されたりする現象（ペルチエ効果）が生じるよ
うになつている。 The heat pump 18 configured as described above is
Basically, the structure is shown in FIG. 4, and a voltage of about several volts is applied from a DC power supply 28 to electrodes 26, 26 separately connected to a P-type or N-type semiconductor 24 or 25, and the current Depending on the orientation of the conductors 24 and 25, a phenomenon (Peltier effect) occurs in which the joining side electrode 26 of the conductors 24 and 25 is cooled or heated.
一方、前記制御回路部２０は、第３図に示すよ
うに、前記冷却フイン１９に設けられた一対の熱
電対端子２９，２９間に接続される熱電対出力増
幅器３０と、冷却フイン１９に設けられた一対の
ヒートポンプ端子３１，３１間に前記直流電源２
８と共に接続される繰作回路すなわちヒートポン
プON−OFF回路３２と、更に同様に冷却フイン
１９に設けられた一対のダイオード端子３３，３
３間に接続されるダイオード出力増幅器３４と、
前記熱電対出力増幅器３０及びダイオード出力増
幅器３４からの出力信号を入力する定着装置の温
度コントローラ３５とで形成されており、かつ、
前記ダイオード出力増幅器３４は、前記温度セン
サ１６の冷接点近傍に配設された温度補償用ダイ
オード４からの出力信号を入力して増幅した後、
その出力信号を前記ヒートポンプON−OFF回路
３２へ入力するようになつている。この場合、ヒ
ートポンプON−OFF回路３２は、例えば温度補
償用ダイオード４の出力を冷接点部の設定温度と
比較する比較回路が設けられ、さらにこの比較回
路の冷接点部設定温度を変える可変抵抗器等の手
段を有し、これにより任意のダイオード出力にて
開閉レベルが可変になつており、冷接点温度に応
じて任意に変えることができるようになつてい
る。また、前記熱電対２からの出力信号が増幅器
３０を経て温度コントローラ３５に入力された
際、ダイオード４からの出力を加えることによつ
て冷接点温度が補正されるようになつている。 On the other hand, as shown in FIG. 3, the control circuit section 20 includes a thermocouple output amplifier 30 connected between a pair of thermocouple terminals 29, 29 provided on the cooling fin 19, and a thermocouple output amplifier 30 provided on the cooling fin 19. The DC power supply 2 is connected between the pair of heat pump terminals 31 and 31
8, a heat pump ON-OFF circuit 32, and a pair of diode terminals 33, 3 similarly provided on the cooling fin 19.
a diode output amplifier 34 connected between the
It is formed by a temperature controller 35 of a fixing device that inputs output signals from the thermocouple output amplifier 30 and the diode output amplifier 34, and
The diode output amplifier 34 inputs and amplifies the output signal from the temperature compensation diode 4 disposed near the cold junction of the temperature sensor 16, and then
The output signal is input to the heat pump ON-OFF circuit 32. In this case, the heat pump ON-OFF circuit 32 is provided with, for example, a comparison circuit that compares the output of the temperature compensation diode 4 with the set temperature of the cold junction, and further includes a variable resistor that changes the set temperature of the cold junction of this comparison circuit. With this means, the opening/closing level can be made variable with any diode output, and can be changed arbitrarily according to the cold junction temperature. Furthermore, when the output signal from the thermocouple 2 is input to the temperature controller 35 via the amplifier 30, the cold junction temperature is corrected by adding the output from the diode 4.
上記のように構成される本発明の温度検出装置
１４を前述の定着装置に使用した場合、温度検出
制御装置１４は加熱ロール６から各種作動条件に
て0.1〜0.5Wの熱エネルギを受ける。このとき、
必要なヒートポンプ１８の設計値を以下のように
設定することにより、所期の目的が達せられる。
すなわち、温度センサ１６の周囲温度は70℃であ
り、このときの冷却フイン部温度（Th）は50℃
となる。したがつて、冷接点温度（Tc）を周囲
温度より60℃低い10℃にすると、ΔT＝Th−Tc
＝50−10＝40（℃）となり、これを満足するヒー
トポンプ１８として例えば「モデルMI1020T」
（商品名）を使用する。このヒートポンプ１８は、
一辺４mm、厚さ２mmの形状であり、温度センサ１
６の冷接点をカバーし、冷却することが可能で、
いま、冷接点温度を10℃に保つべくヒートポンプ
１８の直流電源２８に0.78Vの電圧を印加し、こ
のときの電流値を約1.3Aとすると、ヒートポン
プ１８の冷極面すなわち冷接点部の温度は常に10
℃に保持され、冷却能力としては0.5W以上ある
ことが確認された。また、温度センサとしての性
能は、冷接点部の温度が常に10℃に保持されてい
るため、加熱ロール６からの対流、輻射による熱
がセンサに伝熱され雰囲気温度が20℃から70℃に
変化してもコントロール温度の変化は0.5℃以内
に抑えられた。更に、コントロール温度を180℃
から150℃、210℃に変化させた場合にも、コント
ロール温度は0.2℃以内の変化に抑えられた。し
たがつて、加熱ロール等の被測定物の設定温度を
変化させても冷接点温度を一定に保つことができ
るので、従来の温度センサのように加熱ロール等
の設定温度の変化に応じてダイオード出力の増幅
率を変えたりする必要がない。また、本発明装置
では冷却面温度を最大マイナス30℃まで設定可能
であり、従来では測定不可能であつた室温付近の
被測温体の温度も測定可能となる。 When the temperature detection device 14 of the present invention configured as described above is used in the above-described fixing device, the temperature detection control device 14 receives thermal energy of 0.1 to 0.5 W from the heating roll 6 under various operating conditions. At this time,
The desired purpose can be achieved by setting the necessary design values of the heat pump 18 as follows.
That is, the ambient temperature of the temperature sensor 16 is 70°C, and the cooling fin temperature (Th) at this time is 50°C.
becomes. Therefore, if the cold junction temperature (T c ) is set to 10°C, which is 60°C lower than the ambient temperature, ∆T = Th - T c
= 50-10 = 40 (℃), and an example of a heat pump 18 that satisfies this is "Model MI1020T".
Use (product name). This heat pump 18 is
It has a shape of 4 mm on each side and 2 mm in thickness, and the temperature sensor 1
It is possible to cover and cool 6 cold junctions,
Now, if a voltage of 0.78V is applied to the DC power supply 28 of the heat pump 18 to maintain the cold junction temperature at 10°C, and the current value at this time is approximately 1.3A, the temperature of the cold pole surface of the heat pump 18, that is, the cold junction part is always 10
It was confirmed that the cooling capacity was maintained at ℃ and had a cooling capacity of 0.5W or more. In addition, its performance as a temperature sensor is such that the temperature of the cold junction is always maintained at 10°C, so heat from convection and radiation from the heating roll 6 is transferred to the sensor, increasing the ambient temperature from 20°C to 70°C. Even when the temperature changed, the change in the control temperature was suppressed to within 0.5°C. Furthermore, the control temperature is 180℃
Even when changing the temperature from 150℃ to 210℃, the control temperature was kept within 0.2℃. Therefore, even if the set temperature of the object to be measured such as a heating roll changes, the cold junction temperature can be kept constant. There is no need to change the output amplification factor. Furthermore, with the device of the present invention, the temperature of the cooling surface can be set to a maximum of minus 30° C., making it possible to measure the temperature of the body to be measured near room temperature, which was previously impossible to measure.
なお、上記実施例では複写機の定着装置部の温
度検出に使用した場合について説明したが、必ず
しも被測定物が定着装置である必要はなく、一般
の温度検出用としても充分使用できることはいう
までもない。 Although the above embodiment describes the case where it is used to detect the temperature of the fixing device of a copying machine, the object to be measured does not necessarily have to be the fixing device, and it goes without saying that it can also be used for general temperature detection. Nor.
以上に説明したように、本発明の温度検出装置
によれば、被測定物から放射される赤外線を感知
し、熱起電力を検出する熱電型温度センサの冷接
点部に、ペルチエ効果を利用した熱電素子を接合
するとともに、冷接点近傍に温度補償用ダイオー
ドを配設し、かつ、このダイオードからの出力信
号を熱電素子の操作回路部に入力させて成るた
め、熱電素子の冷却面温度を任意の温度に制御す
ることができるとともに熱電型温度センサの冷接
点温度を被測定物の温度に応じて制御でき、その
結果として、温度検出能力の増大及び安定した温
度検出を可能にすることができるなどの優れた効
果が得られるので、その利用価値は顕著である。
As explained above, according to the temperature detection device of the present invention, the Peltier effect is used in the cold junction part of the thermoelectric temperature sensor that senses infrared rays emitted from the object to be measured and detects thermoelectromotive force. In addition to bonding the thermoelectric element, a temperature compensation diode is placed near the cold junction, and the output signal from this diode is input to the operation circuit of the thermoelectric element, so the temperature of the cooling surface of the thermoelectric element can be adjusted arbitrarily. In addition, the cold junction temperature of the thermoelectric temperature sensor can be controlled according to the temperature of the object to be measured, and as a result, the temperature detection capability can be increased and stable temperature detection can be achieved. Its utility value is remarkable because it can provide excellent effects such as.
また、熱電型センサの冷接点部をペルチエ効果
を利用した熱電素子によつて冷却することができ
るとともに、前記熱電型センサの冷接点部の温度
を温度補償用ダイオードによつて検出し、該温度
補償用ダイオードの出力に基づいて操作回路によ
つて前記熱電素子を冷接点部設定温度に保つこと
により、熱電型センサの冷接点部の温度を任意の
値で一定に保つことができ、被測定物の温度を高
精度に検出することができる。 Further, the cold junction part of the thermoelectric sensor can be cooled by a thermoelectric element that utilizes the Peltier effect, and the temperature of the cold junction part of the thermoelectric sensor can be detected by a temperature compensating diode. By maintaining the thermoelectric element at the cold junction set temperature using the operating circuit based on the output of the compensation diode, the temperature of the cold junction of the thermoelectric sensor can be kept constant at an arbitrary value, and the The temperature of objects can be detected with high precision.
さらに、前記操作回路は、前記熱電素子の設定
温度を任意に変える手段を有しているので、非接
触物の温度範囲に合わせて熱電素子の冷接点部設
定温度を変化させることにより、熱電型センサの
温接点部と冷接点部の温度差を熱電型センサの検
出能力以上に設定することができ、非接触物の温
度範囲に合わせた測定が可能となる。 Furthermore, since the operating circuit has means for arbitrarily changing the set temperature of the thermoelectric element, the thermoelectric The temperature difference between the hot and cold junctions of the sensor can be set to be greater than the detection capability of the thermoelectric sensor, making it possible to measure the temperature of non-contact objects.
またさらに、前記温度補償用ダイオードは、非
接触物の温度補償のみならず、熱電素子の温度制
御に利用しているので、部品点数が少なく、安価
に提供することができる。 Furthermore, since the temperature compensation diode is used not only for temperature compensation of non-contact objects but also for temperature control of thermoelectric elements, the number of components is small and it can be provided at low cost.
第１図は熱電型温度センサの概略断面図、第２
図は本発明の温度検出装置の使用態様の一例を示
す概略側断面図、第３図は本発明の温度検出装置
の構造を示す断面図、第４図は本発明における熱
電素子の基本原理図である。
符号説明、１…シリコン基板、２…熱電対、３
…受感部、４…温度補償用ダイオード、６…加熱
ロール（被測定物）、１４…温度検出装置、１６
…熱電型温度センサ、１８…ヒートポンプ（熱電
素子）、２０…制御回路部、２４…Ｐ型ビスマス
半導体、２５…Ｎ型ビスマス半導体、２６…銅接
片電極、２７…絶縁プレート、２８…直流電源、
２９…熱電対端子、３０…熱電対出力増幅器、３
１…ヒートポンプ端子、３２…ヒートポンプON
−OFF回路（操作回路）、３３…ダイオード端
子、３４…ダイオード出力増幅器、３５…温度コ
ントローラ。
Figure 1 is a schematic cross-sectional view of a thermoelectric temperature sensor, Figure 2
The figure is a schematic side sectional view showing an example of how the temperature detecting device of the present invention is used, FIG. 3 is a sectional view showing the structure of the temperature detecting device of the present invention, and FIG. 4 is a diagram of the basic principle of the thermoelectric element in the present invention. It is. Explanation of symbols, 1...Silicon substrate, 2...Thermocouple, 3
...Sensing section, 4...Temperature compensation diode, 6...Heating roll (object to be measured), 14...Temperature detection device, 16
...Thermoelectric type temperature sensor, 18... Heat pump (thermoelectric element), 20... Control circuit section, 24... P-type bismuth semiconductor, 25... N-type bismuth semiconductor, 26... Copper contact electrode, 27... Insulating plate, 28... DC power supply ,
29...Thermocouple terminal, 30...Thermocouple output amplifier, 3
1...Heat pump terminal, 32...Heat pump ON
-OFF circuit (operation circuit), 33... diode terminal, 34... diode output amplifier, 35... temperature controller.
Claims (1)
せ、該受感部の熱吸収で生じた冷接点部に対する
温度勾配で生じた起電力により前記被測定物の温
度を検出する熱電型センサを有する非接触式温度
検出装置において、前記熱電型センサの冷接点部
を冷却するペルチエ効果を利用した熱電素子を設
け、前記熱電型センサの冷接点部の温度を検出す
る温度補償用ダイオードを設け、該温度補償用ダ
イオードは、前記熱電型センサの出力側に接続さ
れて該温度補償用ダイオードの出力で前記熱電型
センサの出力を補正するとともに、該温度補償用
ダイオードの出力に基づいて前記熱電素子を冷接
点部の設定温度に保つ操作回路に接続されてお
り、かつ該操作回路は前記熱電素子の冷接点部設
定温度を任意に変える手段を有してなることを特
徴とする非接触式温度検出装置。1. Thermoelectric type that focuses infrared rays emitted by the object to be measured on a sensing part and detects the temperature of the object by the electromotive force generated by the temperature gradient against the cold junction caused by heat absorption of the sensing part. A non-contact temperature detection device having a sensor includes a thermoelectric element that utilizes the Peltier effect to cool a cold junction of the thermoelectric sensor, and a temperature compensation diode that detects the temperature of the cold junction of the thermoelectric sensor. The temperature compensation diode is connected to the output side of the thermoelectric sensor to correct the output of the thermoelectric sensor with the output of the temperature compensation diode, and the temperature compensation diode corrects the output of the thermoelectric sensor based on the output of the temperature compensation diode. A non-contact device characterized in that the thermoelectric element is connected to an operating circuit that maintains the set temperature of the cold junction, and the operating circuit has means for arbitrarily changing the set temperature of the cold junction of the thermoelectric element. temperature detection device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58240904A JPS60133329A (en) | 1983-12-22 | 1983-12-22 | Non-contact temperature detection control apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58240904A JPS60133329A (en) | 1983-12-22 | 1983-12-22 | Non-contact temperature detection control apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60133329A JPS60133329A (en) | 1985-07-16 |
| JPH0345778B2 true JPH0345778B2 (en) | 1991-07-12 |
Family
ID=17066402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58240904A Granted JPS60133329A (en) | 1983-12-22 | 1983-12-22 | Non-contact temperature detection control apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60133329A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62106129U (en) * | 1985-12-23 | 1987-07-07 | ||
| JPS6435326A (en) * | 1987-07-31 | 1989-02-06 | Chino Corp | Temperature detector |
| JPH01137435U (en) * | 1988-03-15 | 1989-09-20 | ||
| JPH02196933A (en) * | 1989-01-25 | 1990-08-03 | Daikin Ind Ltd | Infrared-ray detection device |
| US5229612B1 (en) | 1990-08-01 | 1998-04-14 | Exergen Corp | Radiation detector with remote temperature reference |
| JP2560560B2 (en) * | 1991-04-22 | 1996-12-04 | 株式会社島津製作所 | Method for manufacturing thermal photodetector and its support |
| DE19605384C1 (en) * | 1996-02-14 | 1997-02-13 | Fortech Hts Gmbh | Thermoelectric sensor |
| TW314592B (en) * | 1996-09-25 | 1997-09-01 | Oriental System Technology Inc | The absolute radiation thermometer |
| AU9461698A (en) * | 1998-10-15 | 2000-05-01 | Kazuhito Sakano | Infrared sensor and radiation thermometer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56143930A (en) * | 1980-04-11 | 1981-11-10 | Sukegawa Denki Kogyo Kk | Radiant heat measuring device |
| JPS57113332A (en) * | 1980-12-30 | 1982-07-14 | Horiba Ltd | Compensating thermopile detector |
| JPS58204294A (en) * | 1982-05-21 | 1983-11-28 | 日本国有鉄道 | Crushing of sea bottom rock foundation |
-
1983
- 1983-12-22 JP JP58240904A patent/JPS60133329A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56143930A (en) * | 1980-04-11 | 1981-11-10 | Sukegawa Denki Kogyo Kk | Radiant heat measuring device |
| JPS57113332A (en) * | 1980-12-30 | 1982-07-14 | Horiba Ltd | Compensating thermopile detector |
| JPS58204294A (en) * | 1982-05-21 | 1983-11-28 | 日本国有鉄道 | Crushing of sea bottom rock foundation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60133329A (en) | 1985-07-16 |
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