JPH0345027B2 - - Google Patents
Info
- Publication number
- JPH0345027B2 JPH0345027B2 JP60262688A JP26268885A JPH0345027B2 JP H0345027 B2 JPH0345027 B2 JP H0345027B2 JP 60262688 A JP60262688 A JP 60262688A JP 26268885 A JP26268885 A JP 26268885A JP H0345027 B2 JPH0345027 B2 JP H0345027B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- glass
- alumina
- powder
- fired
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000843 powder Substances 0.000 claims description 35
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 34
- 239000011521 glass Substances 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 23
- 238000010304 firing Methods 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000007858 starting material Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 41
- 239000004020 conductor Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 16
- 230000003746 surface roughness Effects 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 229910052878 cordierite Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052863 mullite Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052661 anorthite Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- GWWPLLOVYSCJIO-UHFFFAOYSA-N dialuminum;calcium;disilicate Chemical compound [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] GWWPLLOVYSCJIO-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- -1 resistors Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910019440 Mg(OH) Inorganic materials 0.000 description 1
- 229910018487 NiâCr Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Description
ãçºæã®è©³çŽ°ãªèª¬æã
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æ¹æ³ã«é¢ãããDETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention provides ceramic compositions with good surface smoothness that are particularly suitable for electronic industrial parts and used for other heat-resistant industrial parts, tableware kitchen parts, decorative items, etc. Regarding the manufacturing method.
åŸæ¥ã®æè¡ïŒœ
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èŠ
ãšããçšéã«å¯ŸããŠãåŸæ¥ã埮现ãªã¢ã«ããç²æ«
ããããã«åŸ®éã®MgOãCr2O3ãæ·»å ãããã®ã
åæãšããé«çŽåºŠã¢ã«ããåºæ¿ã䜿çšãããŠã
ãã[Prior art] Thin film patterns such as conductors, resistors, and insulators are formed using thin film forming techniques such as vapor deposition and sputtering methods to form hybrid circuits, such as substrates for thin film hybrid circuits, and other materials. For applications that require a substrate with excellent surface smoothness, high-purity alumina substrates made from fine alumina powder or materials to which trace amounts of MgO or Cr 2 O 3 have been added have traditionally been used. .
ãããã®ã¢ã«ããåºæ¿ã¯ç±çãæ©æ¢°çæ§è³ªã«åª
ããè¡šé¢ç²ãRaã§è¡šçŸããå ŽåãRaïŒ0.1ÎŒïœçš
床ã®è¯å¥œãªå¹³é¢å¹³æ»æ§ãæããèèçšåºæ¿ãšããŠ
ã®é©æ§ãæããŠããã These alumina substrates had excellent thermal and mechanical properties, and when expressed in terms of surface roughness Ra, had good planar smoothness of approximately Ra = 0.1 ÎŒm, making them suitable as substrates for thin films.
çºæã解決ããããšããåé¡ç¹ïŒœ
äžèšåŸæ¥ã®åºæ¿ã¯ãRaã§è¡šçŸã§ãããããªã
ã¯ãçãªèŠéã§ã¿ãå Žåã®è¡šé¢å¹³æ»æ§ã¯åªããŠã
ãããåºæ¿ã®ãããããœãªã¯ãä»ã®Raã®ããŸã
è¯å¥œã§ãªãäœçŽåºŠã¢ã«ããåºæ¿ãšåæ§å€§ãããèž
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ã圢æããéã«äœ¿çšãããã¹ã¯ãã圢æãããè
èã«ããªããªãœã°ã©ãã€ãŒåŠçã«ãããã¿ãŒã³ã
圢æããéã«çšãããã¹ã¯ãšãåºæ¿ãšã®å¯çæ§ã
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ãã¿ãŒã³ã圢æããã®ãå°é£ãšããåé¡ããã€
ãã[Problems to be solved by the invention] The above-mentioned conventional substrates have excellent surface smoothness when viewed from a microscopic perspective expressed by Ra, but the undulations and warpage of the substrate are similar to those of other Ra. Masks that are similar to low-purity alumina substrates, which are not very good, and are used when forming thin film patterns directly on substrates by vapor deposition or sputtering, and masks used when forming patterns on formed thin films by photolithography processing. However, there were problems in that the adhesion with the substrate deteriorated, making it more likely to cause defects and making it difficult to form precise circuit patterns.
ä»ã«å¹³æ»ãªé¢ãæããåºæ¿ãåŸãæ¹æ³ãšããŠ
ã¯ãåºæ¿ãç 磚ããããåºæ¿è¡šé¢ã«ã°ã¬ãŒãºãæœ
éããæ¹æ³ãããããç 磚ããå Žåã«ã¯ã³ã¹ãã
é«ããå
éšã®ãã¢ãŒãè¡šé¢ã«åºãŠãããªã©ã®åé¡
ããããã°ã¬ãŒãºãæœéããæ¹æ³ãã³ã¹ããé«
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èŠããããããã«ã³ã¹ããé«ããª
ããšããåé¡ããã€ãã Other ways to obtain a substrate with a smooth surface include polishing the substrate or applying a glaze to the surface of the substrate, but polishing is expensive and internal pores come out to the surface. The method of applying glaze is also expensive, and in order to eliminate warpage and waviness, it is necessary to polish the substrate to be glazed, further increasing the cost.
åé¡ç¹ã解決ããããã®æ段
æ¬çºæã¯äžèšåé¡ç¹ãèæ
®ããŠãæ©æ¢°çæ§è³ªã
è¯å¥œã§ãçŒæåŸç 磚ããããšãªãããŠããããã
ãœãªãå°ããåèçšå°äœãšã®å¯çæ§ã«åªãããã€
Raã0.1ÎŒïœçšåºŠã®åªããè¡šé¢å¹³æ»æ§ãæããåº
æ¿ææçµæç©ãæäŸãããã®ã§ããã[Means for Solving the Problems] In consideration of the above problems, the present invention has good mechanical properties, eliminates waviness, and eliminates undulations without polishing after firing.
Small warpage, excellent adhesion with thick film conductors, and
The present invention provides a substrate material composition having excellent surface smoothness with an Ra of about 0.1 ÎŒm.
ããªãã¡ãæ¬çºæã¯ãééåºæºã§10ïŒ
ãŸã§ã®äž
çŽç©ãå«ãããšã®ããMOïŒãã ãïŒïŒCaãMgïŒ
ïŒã35.75ïŒ
ãSiO218ã45.5ïŒ
ãAl2O335ã72ïŒ
ã
B2O30ã19.5ïŒ
ãããªãçµæããã¡ãåºçºåæãš
ããŠ10ïŒ
ãŸã§ã®äžçŽç©ãå«ãããšã®ããMO10ã
55ïŒ
ãAl2O30ã30ïŒ
ãSiO245ã70ïŒ
ãB2O30ã
30ïŒ
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æ§ã®è¯ãã»ã©ããã¯çµæç©ã®è£œé æ¹æ³ã§ããã That is, the present invention deals with MO (where M: Ca, Mg) which may contain up to 10% impurities on a weight basis.
4-35.75%, SiO2 18-45.5%, Al2O3 35-72 %,
MO10~ with a composition consisting of 0~19.5% B2O3 and may contain up to 10% impurities as starting material
55%, Al2O3 0 ~30%, SiO2 45~70%, B2O3 0 ~
Glass powder with a BET specific surface area of 3 m 2 /g or more, with the balance being 40-65%.
A mixture of alumina with a BET specific surface area of 4.5 to 6 m 2 /g, which may contain up to 10% impurities, was heated at 1100°C.
This is a method for producing a ceramic composition with good surface smoothness, which is characterized by firing at the following temperature.
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èŠã§ããã A composition that meets the above purpose can be obtained by such a manufacturing method, but more specifically, a method of firing a green tape obtained by a doctor blade method, that is, a method in which a binder, a plasticizer, a solvent, and a dispersant are added to the raw material powder. It is preferable that after adding and mixing, the green tape formed into a sheet shape is punched out into a desired size using a knife coater or the like, and then fired. The reason is that the surface of the green tape obtained in this way has a very smooth surface compared to the pre-fired molded product obtained by other molding methods, and the smoothness of the fired product is This is to give good results.
When obtaining a molded body using other molding methods, such as dry powder pressing, the surface of the press mold must have a mirror surface or a surface roughness close to that, and the binder added to the raw materials must be used to prevent pores or In order to avoid leaving pinholes, care must be taken such as choosing a material that is as soft as possible.
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é©ã®æåã瀺ãã The reason why the composition obtained in the present invention has less waviness and warp is due to the softening of the glass that occurs during firing because 40 to 65% glass is used as the starting material. In other words, the surface of the substrate whose starting material glass has been softened during firing and shrinkage will follow the surface of the setter that holds the substrate during firing, so if there is no undulation or warpage on the setter surface, No waviness or warping occurs on the board. Therefore, it is necessary for the setter to have no undulations or warps, and it is preferable to use a polished alumina substrate or crystallized glass.
Ra doesn't have to be that good. Due to this behavior, in order to eliminate waviness and warpage, the softening state of the glass immediately after the densification of the material is completed is important. If it softens too much, it will react with the setter, and if it is not softened enough, it will cause waviness. , the sled doesn't go away.
The composition of the present invention exhibits optimal glass softening behavior under the above conditions.
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ç·ãšãæ¥ç¶ã§ããã Since the above composition can be fired at a low temperature of 1100â or less, Ag, Ag
âUsing wiring conductor materials such as Pd, Au, and Cu,
It can be a co-fired multilayer circuit board. Of course, thin film circuits can be formed on the surface of this multilayer circuit board and can be connected to internal wiring.
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ããšã¯ãªãã When the above conductor materials are co-fired, the softening of the glass causes the conductor wiring pattern to flow.
In the composition of the present invention, the alumina powder used as a starting material prevents the conductor pattern from flowing, and also prevents the precipitation of secondary crystals such as anorthite, mullite, and cordierite that occur immediately after the densification of the material is completed. It also prevents the conductor pattern from flowing. Similarly, when forming a thick film on a fired body, the pattern does not flow.
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ãã As described above, the composition of the present invention can be fired at temperatures below 1100°C, and therefore
Another major feature is the ability to use low-resistance conductor materials such as
Because the temperature is as high as 1,500 to 1,700°C, it was necessary to sinter relatively high-resistance conductor materials such as Mo and W in a reducing atmosphere. In addition, in order to use this type of circuit board, the dielectric constant of the board should be small in order to reduce the signal propagation delay, and the coefficient of thermal expansion should also be low considering that the silicon chip is directly mounted. , which is close to silicon's 3.5Ã10 -6 °C, is better, but conventional alumina substrates have a large dielectric constant ε=10 and a large coefficient of thermal expansion of 7Ã10 -6 /â, but the substrate of the present invention has a high dielectric constant ε=10. = 6 to 9, and the coefficient of thermal expansion is also small, 3 to 7 x 10 -6 /°C.
次ã«æ¬çºæã«äœ¿çšããã¬ã©ã¹ç²æ«ã®çµæãã¢ã«
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ã€ããŠè¿°ã¹ãã Next, the composition of the glass powder used in the present invention, the ratio of the alumina powder to the glass powder, and the reason for limiting the BET specific surface area of the glass powder and the alumina powder will be described.
SiO2ã¯45ã70ïŒ
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å
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1100â以äžã§ã®çŒæãå°é£ãšãªãã SiO2 is limited to a range of 45-70%. If SiO 2 decreases below the specified amount, the dielectric constant and coefficient of thermal expansion will increase, and the amount of anorthite, cordierite, and mullite that precipitates due to component crystallization will not be sufficient, causing conductor and resistance patterns to deteriorate during firing and reheating. It becomes easier to flow. If the amount exceeds the specified amount
It becomes difficult to fire at temperatures below 1100â.
Al2O3ã¯30ïŒ
ããå€ããªããš1100â以äžã§ã®çŒ
æãå°é£ãšãªãã When Al 2 O 3 exceeds 30%, it becomes difficult to sinter at temperatures below 1100°C.
MOã10ïŒ
ããå°ãªããªããš1100â以äžã§ã®çŒ
æãäžå¯èœãšãªã55ïŒ
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ä¿æ°ã倧ãããªããCaOããMgOã䜿çšããæ¹
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åã§ãªããªãã When MO is less than 10%, firing at temperatures below 1100°C is impossible, and when it exceeds 55%, the dielectric constant and coefficient of thermal expansion become large. The dielectric constant and coefficient of thermal expansion are smaller when MgO is used than CaO, but if it exceeds 55%, the amount of cordierite and mullite precipitated due to partial crystallization will not be sufficient.
B2O3ã¯ã¬ã©ã¹ã1300ã1450âéè¿ã®æž©åºŠã§æº¶
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ãã B 2 O 3 melts glass at temperatures around 1300 to 1450â, and has the effect of lowering the firing temperature of ceramics, so it can be used at a firing temperature of 1100â or lower without changing the electrical or mechanical properties. You will be able to do it. When the B 2 O 3 content exceeds 30%, resistance strength becomes weak, water resistance deteriorates, and reliability deteriorates. However, as B 2 O 3 increases, the dielectric constant and coefficient of thermal expansion tend to decrease.
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ã奜ãŸãããªãã This glass contains up to 0-5% impurities.
It may contain alkali metal oxides such as Na 2 O or K 2 O. These are contained as impurities in glass raw materials, or are added to improve solubility during vitrification, but if the amount exceeds 5%, it may deteriorate electrical properties and water resistance, leading to reliability problems. It gets worse and I don't like it.
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é²ããå Žåããããšèããããã Also, BaO, PbO, Fe 2 O 3 , MnO 2 , Mn 3 O 4 ,
It may contain up to 10% of impurities such as Cr 2 O 3 , NiO, Co 2 O 3 . These do not significantly deteriorate the properties, and when the material of the present invention is partially crystallized, there is basically no need to add a special nucleating substance to the glass component, but the impurities mentioned above impair crystallization. It is thought that this may be promoted in some cases.
ã¢ã«ããç²æ«ãšã¬ã©ã¹ç²æ«ã®å²åã¯ã35ã60ïŒ
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ãšåŒ·åºŠãå°ãããªãåºæ¿ãšããŠã®åŒ·åºŠãäžè¶³ã
ãã The ratio of alumina powder and glass powder is 35-60%
It needs to be 65% to 40%. Alumina powder is 60
If it exceeds %, a dense sintered body cannot be obtained at temperatures below 1100°C, and the dielectric body also becomes large. If it is less than 35%, the strength will be low and the strength as a substrate will be insufficient.
ã¢ã«ããç²æ«ãšã¬ã©ã¹ç²æ«ã®BETæ¯è¡šé¢ç©ã
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ãRaïŒ0.1ÎŒïœçšåºŠãã€ãŸã0.2ÎŒïœRa以äžã®è¯å¥œ
ãªè¡šé¢å¹³æ»æ§ãæããããã«éåžžã«éèŠã§ããã Limiting the BET specific surface area of alumina powder and glass powder is very important in order for the surface roughness of the substrate obtained by the present invention to have a good surface smoothness of about Ra = 0.1 ÎŒm, that is, 0.2 ÎŒm Ra or less. be.
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ãããããããã®å¹æã«ããRaïŒ0.1ÎŒïœçšåºŠåŸ
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å ŽåïŒm2ïŒïœä»¥äžãªããšç·»å¯ãªçŒçµäœãåŸãããª
ããªãã The reason why the BET specific surface area of the glass powder needs to be 3 m 2 /g or more is that the BET specific surface area becomes large;
In other words, if the particle size becomes finer, there will be more viscous flowing parts of the glass during firing, and the surface will be smoother.
In addition, the surface roughness after firing due to the size of the glass particles of the starting material is reduced, and the surface roughness is improved, but in order to obtain Ra = approximately 0.1 ÎŒm due to these effects, the specific surface area must be 3 m 2 /g. This is because glass powder having a fineness higher than that is required. However, when the proportion of glass is 40-50%, the glass powder
The BET specific surface area is required to be 4 cm 2 /g or more. In this case, if it is less than 4 m 2 /g, a dense sintered body cannot be obtained.
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ãããªããªãã The reason why the BET specific surface area of alumina powder is required to be 4.5 m 2 /g or more is that the surface roughness caused by the alumina particles located on the surface after firing becomes smaller if the alumina particles are finer, and the surface roughness is improved. Therefore, in order to obtain Ra=0.1ÎŒm, the specific surface must be
This is because fine alumina powder of 4.5 cm 2 /g or more is required. However, if the alumina powder is 6 m 2 /g or more, the material loses its sinterability, making it impossible to obtain a dense sintered body.
ã¢ã«ããç²æ«ã®BETæ¯è¡šé¢ç©ã®éå®ç¯å²ã¯ã
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åã«ç·»å¯åããªããªãã The limited range of BET specific surface area of alumina powder is
It can also be indicated by a limited range of particle sizes. In other words, in order to obtain Ra=0.1ÎŒm, the average particle size is
The thickness is required to be 1 ÎŒm or less, and if it is 0.5 ÎŒm or less, the material will not be sufficiently densified.
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äŸãšããŠã¯ãåæãšããŠCaOãMgOãSiO2ã
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ç¯å²ã§ããã As an example of the embodiment of the method for producing the ceramic composition of the present invention, raw materials include CaO, MgO, SiO 2 ,
Al 2 O 3 and B 2 O 3 are mixed to a predetermined composition, melted and rapidly cooled at 1300 to 1450°C, and vitrified.
The raw material may be in the form of carbonate, oxide, hydroxide, etc. This temperature range is a desirable range considering the furnace materials and the like.
次ã«ã¬ã©ã¹ç²æ«ãšã¢ã«ããç²æ«ãšãæå®ã®å²å
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ãã Next, glass powder and alumina powder are mixed in a predetermined ratio to form a molded powder, which is then molded using normal ceramic molding methods such as cold pressing or tape casting, and fired at 800 to 1000°C. .
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ãšããããšãã§ããã When applying the present invention to a multilayer board, for example, an Ag-based conductor is printed on a formed green sheet,
A necessary number of substrates can be stacked and fired at the same time, and through holes can be formed if necessary to form an integrated substrate.
ãŸããRuO2ç³»ãããã¯SiCç³»çã®æµæãå°å·
ããããã«ã¯BaTiO3ç³»ãSrTiO3ç³»ãPbïŒFe2/3
W1/3ïŒO3âPbïŒFe1/2Nb1/2ïŒO3ç³»çã®ã³ã³ãã³ãµ
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ããããšãã§ããã In addition, we can print resistors such as RuO 2 or SiC, as well as BaTiO 3 , SrTiO 3 , Pb (Fe 2/3
Print a capacitor paste such as W 1/3 ) O 3 âPb (Fe 1/2 Nb 1/2 ) O 3 on a green sheet, and stack these or create a green sheet based on the capacitor composition. , these can be stacked and fired at the same time to form an integrated substrate with built-in resistance capacitors.
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ã§ããã Furthermore, we printed a Cu powder paste with particle size adjustment and oxidation-resistant treatment as a conductor on a green sheet to create a multilayered structure, and then simultaneously fired it in an atmosphere mainly composed of N2 . It is also possible to create fired multilayer substrates. In this case, since the atmosphere is N2 inert, a resistance paste using a metal or intermetallic compound such as Ni-Cr molybdenum silicide or W-Ni is used to remove Cu.
It is also possible to create multilayer substrates with built-in conductors and resistors.
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ãã900ã1000âã§çŒæããç©çç¹æ§ã枬å®ããã[Example] CaCO 3 , Mg(OH) 2 , SiO 2 , Al 2 O 3 and H 3 BO 3 were used as starting materials for glass and were weighed according to predetermined composition ratios. After mixing thoroughly with the Raikai machine,
Glass was obtained by melting it at 1400â and dropping it into water. The obtained glass was put into an alumina pot together with water and alumina balls, mixed and pulverized, and after drying, a glass powder having a specific surface area of 3 to 4.5 m 2 /g was obtained. 45 to 60% of this glass powder and 55 to 40% of alumina powder having a BET specific surface area of 5.7 m 2 /g and an average particle size of 0.8 ÎŒm were placed in an alumina pot together with water and alumina balls, mixed for 3 hours, and then dried. 1000g of this dry powder, 100g of methacrylic binder, 50g of plasticizer (DOP),
After adding 450 g of solvent (toluene, xylene) to form a slip, a 1 mm thick green sheet was prepared using a doctor blade. This green sheet was fired at 900-1000°C and its physical properties were measured.
è¡šïŒã«å®æœäŸïŒãïŒãšããŠãçµæãšç©çç¹æ§ãš
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0.12ÎŒïœã§ããããããããéåžžã«å°ããã€ãã Table 1 shows the relationship between composition and physical properties as Examples 1 to 4. The Ra of the obtained substrate is 0.08 ~
At 0.12 ÎŒm, waviness and warpage were also very small.
第ïŒå³ã¯å®æœäŸïŒã®è¡šé¢ç²ãRaã枬å®ããé
ã®æž¬å®ãã€ãŒãã§ããã FIG. 1 is a measurement chart when the surface roughness Ra of Example 1 was measured.
第ïŒå³ã¯ã¬ã©ã¹ç²æ«2.5m2ïŒïœãã¢ã«ããïŒ
m2ïŒïœã®æ¯è¡šé¢ç©ããã¡ãã¬ã©ã¹çµæãšããŠã¯ã
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枬å®ããéã®æž¬å®ãã€ãŒãã§ãããRaïŒ0.25ÎŒïœ
ãšå€§ããã枬å®ãã€ãŒããããå®æœäŸãšã®éãã
ãããã Figure 3 shows glass powder 2.5m 2 /g, alumina 4
It has a specific surface area of m 2 /g, and the glass composition is:
This is a measurement chart for measuring the surface roughness Ra of a substrate made using a material having the same composition as in Example 1 and using the same method as in Example. Ra=0.25ÎŒm
The difference from the example can also be seen from the measurement chart.
第ïŒå³ã¯å®æœäŸïŒã®åºæ¿ã®æé¢æ²ç·ã§ãããåº
æ¿ã®å€§ããã¯60Ã50mmã§é·èŸºæ¹åã®çäžçŽ40mmã
枬å®ããã FIG. 2 is a cross-sectional curve of the substrate of Example 1. The size of the board was 60 x 50 mm, and we measured about 40 mm in the middle of the long side.
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ãŠãããåºæ¿ã®å€§ããã¯60Ã50mmãåãã¯0.82mm
ã§é·èŸºæ¹åã®çäžçŽ40mmã枬å®ãããäž¡æ¹ãæ¯èŒ
ããŠãããããã«ãæ¬çºæã§åŸãããåºæ¿ã¯ãã
ããããããã¢ã«ããç²æ«ã«æ¯èŒããŠéåžžã«å°ã
ãããšããããã FIG. 4 shows a cross-sectional curve of a high-purity alumina substrate. The size of the board is 60 x 50mm, the thickness is 0.82mm
Measured about 40mm in the middle of the long side. As can be seen by comparing both, the substrate obtained by the present invention has much smaller waviness and warp than alumina powder.
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ã䜿çšããŠã0.3mmåã®ã°ãªãŒã³ã·ãŒããäœæã
ããAgç²æ«15ïœãšPdç²æ«ïŒïœã®æ··åç©ã«ãšãã«
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å·ãããåæ§ã®æé ã§å°äœãã¿ãŒã³ã®ç°ãªãïŒæ
ã®å°äœãã¿ãŒã³å°å·ã°ãªãŒã³ã·ãŒããåŸãããã®
ïŒæã®ã°ãªãŒã³ã·ãŒãã120âã100KgïŒcm2ã60ç§
éã®æ¡ä»¶ã§å å§ã©ãããŒãããŠäžäœæ§é ãšããã
ïŒå±€ã®å°äœå±€éã®æ¥ç¶ã¯ã0.4mmÏã®ã¹ã«ãŒããŒ
ã«ã«äžèšAgâPdããŒã¹ããå
å¡«ããŠè¡ãªã€ãã
ãã®ã°ãªãŒã³ããã€ã900âã«20åããŒã«ãã®æ¡
件ã§çŒæãããåŸãããå€å±€åºæ¿ã®è¡šé¢ç²ãã¯
0.1ÎŒïœRaã§ãã€ãããã®åºæ¿è¡šé¢ã«Ta2Nã®èè
ãã¹ããã¿æ³ã«ãã圢æããŠããªãœã°ã©ãã€ãŒåŠ
çã«ããæµæäœãã¿ãŒã³ã圢æãããããã«Tiã
Pdã®é ã«ã¹ããã¿æ³ã«ããèèã圢æãããªãœ
ã°ã©ãã€ãŒåŠçã«ããå°äœãã¿ãŒã³ã圢æãã
åŸãå°äœãã¿ãŒã³ã«Auã¡ãããããŠèèæ··æå
è·¯ãæ§æãããå
éšå°äœãšè¡šé¢èèåè·¯ã¯ã¹ã«ãŒ
ããŒã«ã«ããæ¥ç¶ããã以äžã®æ¹æ³ã«ããå€å±€é
ç·åºæ¿äžã«èèæ··æåè·¯ã圢æãããApplication Example A green sheet with a thickness of 0.3 mm was produced using the same material as in Example 2 in the same manner as in the above example. Add 1 g of ethyl cellulose and 12 g of terpineol to a mixture of 15 g of Ag powder and 5 g of Pd powder,
A conductor pattern was printed on a green sheet using a paste prepared by thoroughly kneading it with this roller. Four conductor pattern printed green sheets having different conductor patterns were obtained using the same procedure. These four green sheets were laminated under pressure at 120° C., 100 Kg/cm 2 for 60 seconds to form an integral structure.
Connections between the four conductor layers were made by filling 0.4 mm diameter through holes with the Ag--Pd paste.
This green body was fired at 900°C and held for 20 minutes. The surface roughness of the obtained multilayer substrate is
It was 0.1ÎŒmRa. A thin film of Ta 2 N was formed on the surface of this substrate by sputtering, and a resistor pattern was formed by lithography. Furthermore, Ti,
After forming a thin film of Pd by sputtering and forming a conductor pattern by lithography, the conductor pattern was plated with Au to construct a thin film hybrid circuit. The inner conductor and surface thin film circuit were connected by through holes. A thin film hybrid circuit was formed on a multilayer wiring board by the method described above.
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æ¿ã圢æããããšãã§ããããã®ãã®ã¯0.1ÎŒïœ
RaçšåºŠã®è¡šé¢ç²ããæãããŸãé«çŽåºŠã¢ã«ãã
åºæ¿ã«æ¯èŒãããããããããéåžžã«å°ãªãã®
ã§ãèèãã¿ãŒã³ã圢æããéã«äœ¿çšãããã¹ã¯
ãšåºæ¿ã®å¯çæ§ãè¯å¥œã§ã粟å¯ãªåè·¯ãã¿ãŒã³ã
圢æããã®ã容æã§ããããŸã1100â以äžã§çŒæ
ã§ããã®ã§ãAuãAgãAgâPdãCuãªã©ã®å°äœ
ã䜿çšããŠåæçŒæå€å±€åºæ¿ãäœæããããšãå¯
èœã§ããã®è¡šé¢ã«èèåè·¯ã圢æããã°ãèèå
è·¯ãå«ãé«å¯åºŠãªäžæ¬¡å
åè·¯ã圢æã§ããã[Effects of the Invention] The composition obtained by the present invention can form a substrate with good surface smoothness. This one is 0.1ÎŒm
It has a surface roughness on the order of Ra, and has very little waviness or warping compared to high-purity alumina substrates, so the adhesion between the mask used to form thin film patterns and the substrate is good, allowing precision circuits to be formed. Easy to form patterns. Additionally, since it can be fired at temperatures below 1100â, it is possible to create co-fired multilayer substrates using conductors such as Au, Ag, Ag-Pd, and Cu. High-density three-dimensional circuits can be formed.
第ïŒå³ã¯å®æœäŸïŒã®è¡šé¢ç²ãã®æž¬å®ã°ã©ãã第
ïŒå³ã¯ååºæ¿ã®æé¢æ²ç·ã第ïŒå³ã¯åŸæ¥ã®ã¢ã«ã
ãåºæ¿ã®è¡šé¢ç²ãã®æž¬å®ã°ã©ãã第ïŒå³ã¯ååºæ¿
ã®æé¢æ²ç·ã瀺ãã
Fig. 1 is a measurement graph of the surface roughness of Example 1, Fig. 2 is a cross-sectional curve of the same substrate, Fig. 3 is a measurement graph of the surface roughness of a conventional alumina substrate, and Fig. 4 is a cross-sectional curve of the same substrate. shows.
Claims (1)
ãMOïŒãã ãïŒïŒCaãMgïŒïŒã35.75ïŒ ã
SiO218ã45.5ïŒ ãAl2O335ã72ïŒ ãB2O30ã19.5
ïŒ ãããªãçµæããã¡ãåºçºåæãšããŠ10ïŒ ãŸã§
ã®äžçŽç©ãå«ãããšã®ããMO10ã55ïŒ ãAl2O30
ã30ïŒ ãSiO245ã70ïŒ ãB2O30ã30ïŒ ãããªãçµ
æç¯å²ã«ããããã®BETæ¯è¡šé¢ç©ãïŒm2ïŒïœä»¥
äžã®ã¬ã©ã¹ç²æ«40ã65ïŒ ãšæ®éšã10ïŒ ãŸã§ã®äžçŽ
ç©ãå«ãããšã®ããBETæ¯è¡šé¢ç©ã4.5ãïŒm2ïŒ
ïœã®ã¢ã«ããã®æ··åç©ã1100â以äžã®æž©åºŠã§çŒæ
ããããšãç¹åŸŽãšããè¡šé¢å¹³æ»æ§ã®è¯ãã»ã©ãã
ã¯çµæç©ã®è£œé æ¹æ³ã1 MO (M: Ca, Mg) 4 to 35.75%, which may contain impurities up to 10% by weight,
SiO2 18~45.5%, Al2O3 35~72%, B2O3 0 ~ 19.5
% and may contain up to 10% impurities as starting material MO10-55%, Al 2 O 3 0
-30%, SiO 2 45-70%, B 2 O 3 0-30%, with a BET specific surface area of 3 m 2 /g or more, 40-65% glass powder and the balance up to 10%. BET specific surface area that may contain impurities is 4.5 to 6 m 2 /
A method for producing a ceramic composition with good surface smoothness, characterized by firing a mixture of g of alumina at a temperature of 1100°C or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60262688A JPS62123059A (en) | 1985-11-25 | 1985-11-25 | Ceramic composition with surface smoothness |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60262688A JPS62123059A (en) | 1985-11-25 | 1985-11-25 | Ceramic composition with surface smoothness |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62123059A JPS62123059A (en) | 1987-06-04 |
JPH0345027B2 true JPH0345027B2 (en) | 1991-07-09 |
Family
ID=17379212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60262688A Granted JPS62123059A (en) | 1985-11-25 | 1985-11-25 | Ceramic composition with surface smoothness |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62123059A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0694386B2 (en) * | 1988-01-29 | 1994-11-24 | æŸäžé»åšç£æ¥æ ªåŒäŒç€Ÿ | Green sheet material for ceramic multilayer substrates |
US7045223B2 (en) | 2003-09-23 | 2006-05-16 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
US7326477B2 (en) | 2003-09-23 | 2008-02-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel boules, wafers, and methods for fabricating same |
US7919815B1 (en) | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
CN106316370A (en) * | 2016-08-18 | 2017-01-11 | æ¯åŸ·éç·çç 究æ | Novel jade ceramic material and preparation method and application of novel jade ceramic |
-
1985
- 1985-11-25 JP JP60262688A patent/JPS62123059A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62123059A (en) | 1987-06-04 |
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