JPH0342492B2 - - Google Patents

Info

Publication number
JPH0342492B2
JPH0342492B2 JP58221985A JP22198583A JPH0342492B2 JP H0342492 B2 JPH0342492 B2 JP H0342492B2 JP 58221985 A JP58221985 A JP 58221985A JP 22198583 A JP22198583 A JP 22198583A JP H0342492 B2 JPH0342492 B2 JP H0342492B2
Authority
JP
Japan
Prior art keywords
film
resist film
pattern
temperature
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58221985A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60115222A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58221985A priority Critical patent/JPS60115222A/ja
Priority to US06/672,763 priority patent/US4590149A/en
Publication of JPS60115222A publication Critical patent/JPS60115222A/ja
Publication of JPH0342492B2 publication Critical patent/JPH0342492B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • ing And Chemical Polishing (AREA)
JP58221985A 1983-11-28 1983-11-28 微細パタ−ン形成方法 Granted JPS60115222A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58221985A JPS60115222A (ja) 1983-11-28 1983-11-28 微細パタ−ン形成方法
US06/672,763 US4590149A (en) 1983-11-28 1984-11-19 Method for fine pattern formation on a photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58221985A JPS60115222A (ja) 1983-11-28 1983-11-28 微細パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS60115222A JPS60115222A (ja) 1985-06-21
JPH0342492B2 true JPH0342492B2 (member.php) 1991-06-27

Family

ID=16775263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58221985A Granted JPS60115222A (ja) 1983-11-28 1983-11-28 微細パタ−ン形成方法

Country Status (2)

Country Link
US (1) US4590149A (member.php)
JP (1) JPS60115222A (member.php)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930010248B1 (ko) * 1984-09-14 1993-10-15 가부시끼가이샤 히다찌세이사꾸쇼 패턴 형성 방법
JPS62127735A (ja) * 1985-11-29 1987-06-10 Toshiba Corp 感光性樹脂組成物及びこれを用いたカラ−フイルタ−の製造方法
JPS6381820A (ja) * 1986-09-25 1988-04-12 Toshiba Corp レジストパタ−ン形成方法
JP2538052B2 (ja) * 1989-04-28 1996-09-25 松下電器産業株式会社 レジスト重合促進加熱方法および装置
US20030008968A1 (en) * 2001-07-05 2003-01-09 Yoshiki Sugeta Method for reducing pattern dimension in photoresist layer
JP4761289B2 (ja) * 2004-11-22 2011-08-31 Ｈｏｙａ株式会社 マーキング装置及びマーキング方法
US8577488B2 (en) * 2010-02-11 2013-11-05 Monosol Rx, Llc Method and system for optimizing film production and minimizing film scrap
US8986562B2 (en) 2013-08-07 2015-03-24 Ultratech, Inc. Methods of laser processing photoresist in a gaseous environment
KR102306612B1 (ko) 2014-01-31 2021-09-29 램 리써치 코포레이션 진공-통합된 하드마스크 프로세스 및 장치
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
US12125711B2 (en) 2019-03-18 2024-10-22 Lam Research Corporation Reducing roughness of extreme ultraviolet lithography resists
CN113785381B (zh) 2019-04-30 2025-04-22 朗姆研究公司 用于极紫外光刻抗蚀剂改善的原子层蚀刻及选择性沉积处理
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
EP4651192A2 (en) 2020-01-15 2025-11-19 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
TWI876020B (zh) 2020-04-03 2025-03-11 美商蘭姆研究公司 處理光阻的方法、以及用於沉積薄膜的設備
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
KR20250057101A (ko) 2020-11-13 2025-04-28 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2447225C2 (de) * 1974-10-03 1983-12-22 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Ablösen von positiven Photolack
US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
US4241165A (en) * 1978-09-05 1980-12-23 Motorola, Inc. Plasma development process for photoresist
JPS5569265A (en) * 1978-11-15 1980-05-24 Hitachi Ltd Pattern-forming method
JPS56137347A (en) * 1980-03-29 1981-10-27 Tokyo Ohka Kogyo Co Ltd Photosensitive composition for dry development
JPS5744143A (en) * 1980-08-29 1982-03-12 Tokyo Ohka Kogyo Co Ltd Composition and method for forming micropattern
KR880002518B1 (ko) * 1981-07-15 1988-11-26 미다가쓰시께 방사선 감응성 조성물
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
JPS58223149A (ja) * 1982-06-22 1983-12-24 Toray Ind Inc 感光性ポリイミド用現像液
DE3233912A1 (de) * 1982-09-13 1984-03-15 Merck Patent Gmbh, 6100 Darmstadt Fotolacke zur ausbildung von reliefstrukturen aus hochwaermebestaendigen polymeren
US4433044A (en) * 1982-11-15 1984-02-21 Rca Corporation Dry developable positive photoresists
US4551409A (en) * 1983-11-07 1985-11-05 Shipley Company Inc. Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide

Also Published As

Publication number Publication date
US4590149A (en) 1986-05-20
JPS60115222A (ja) 1985-06-21

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