JPH0341545B2 - - Google Patents
Info
- Publication number
- JPH0341545B2 JPH0341545B2 JP12877986A JP12877986A JPH0341545B2 JP H0341545 B2 JPH0341545 B2 JP H0341545B2 JP 12877986 A JP12877986 A JP 12877986A JP 12877986 A JP12877986 A JP 12877986A JP H0341545 B2 JPH0341545 B2 JP H0341545B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- plane
- crystal
- soft ferrite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 15
- 229910001035 Soft ferrite Inorganic materials 0.000 claims description 9
- 238000005477 sputtering target Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、ソフトフエライトからなるスパツ
タリング用ターゲツトの改良に係り、（100）結晶
面からなる単結晶ソフトフエライトより構成して
スパツタリング時の被膜形成速度を大幅に向上さ
せたスパツタリング用ターゲツトに関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to the improvement of a sputtering target made of soft ferrite, which improves the coating formation rate during sputtering by making it made of single-crystal soft ferrite with a (100) crystal plane. This invention relates to a significantly improved sputtering target.
従来の技術
現在、半導体分野におけるIC製造工程及び薄
膜磁気ヘツド、薄膜磁気デイスクなどの製造工程
において、めつき法や蒸着法に代えて、スパツタ
リングによる薄膜形成が実用化されかつ主流とな
りつつあり、薄膜を必要とする他の最先端技術分
野にても益々その適用が拡大している。Conventional technology Currently, in the semiconductor field, thin film formation by sputtering has been put into practical use and is becoming mainstream in place of plating and vapor deposition methods in the manufacturing process of ICs, thin film magnetic heads, thin film magnetic disks, etc. Its application is increasingly expanding to other cutting-edge technology fields that require
発明が解決しようとする課題
一般に、薄膜形成用のスパツタリング装置は、
その適用分野に応じて、各々特徴並びに諸性能を
保持するよう構成されるが、各分野に共通の問題
点として、生産性向上のために、いかに薄膜形成
速度を向上させるかが大きな問題となつている。Problems to be Solved by the Invention In general, sputtering apparatuses for forming thin films are
Each device is configured to maintain its characteristics and various performances depending on the field of application, but a common problem in each field is how to improve the thin film formation speed in order to improve productivity. ing.
従来、スパツタリング速度における薄膜形成速
度を向上させる方法として、電源パワーの大型
化、あるいは比較的複雑な構造となるがマグネト
ロン方式の装置にするほか、ターゲツト自体の改
良として、組成の変更や冷却性能向上、ギヤツプ
タイプ等に形状を変更するなどの方法が提案され
ているが、装置構造を複雑化あるいは電力消費量
を増大させるなどの新たな問題を生じていた。 Conventionally, methods to improve the thin film formation rate at sputtering speeds include increasing the power supply or using a magnetron-type device, which has a relatively complicated structure, as well as improving the target itself by changing its composition and improving its cooling performance. Although methods have been proposed, such as changing the shape to a gap type, etc., new problems have arisen, such as complicating the device structure and increasing power consumption.
この発明は、かかる問題点に鑑み、装置及びタ
ーゲツト構造を複雑化あるいは電力消費量を増大
させることなく、膜形成速度を大きく向上させる
ことができるスパツタリング用ターゲツトの提供
を目的としている。 In view of these problems, the present invention aims to provide a sputtering target that can significantly improve the film formation rate without complicating the apparatus and target structure or increasing power consumption.
課題を解決するための手段
この発明は、
ターゲツト表面の全てが（100）結晶面からな
る単結晶ソフトフエライトより構成されたことを
特徴とするスパツタリング用ターゲツトである。Means for Solving the Problems The present invention is a sputtering target characterized in that the entire surface of the target is made of single-crystal soft ferrite consisting of (100) crystal planes.
作 用
従来、磁気ヘツド用のターゲツトに、無配向の
多結晶ソフトフエライト材が使用されているが、
スパツタリングの際、ターゲツト表面に結晶段差
が生じることから、ソフトフエライト材の各結晶
面でスパツタリング速度が異なることに着目し、
スパツタリング生産性向上を目的に種々検討した
結果、（100）結晶面が100％を占める面をターゲ
ツト面とすると、スパツタリング速度が著しく向
上することを知見し、この発明を完成したもので
ある。Function Conventionally, non-oriented polycrystalline soft ferrite materials have been used as targets for magnetic heads.
During sputtering, crystal steps occur on the target surface, so we focused on the fact that the sputtering speed differs for each crystal plane of soft ferrite material.
As a result of various studies aimed at improving sputtering productivity, the present invention was completed based on the finding that the sputtering speed was significantly improved when the target plane was a plane in which 100% of the (100) crystal planes occupied.
この発明によるソフトフエライトからなるター
ゲツト材には、所謂引き上げ法にて作製された配
向度が100％の単結晶ソフトフエライトを用いる。 As the target material made of soft ferrite according to the present invention, single-crystal soft ferrite with a degree of orientation of 100% produced by a so-called pulling method is used.
この発明によるターゲツトは、現在実用化され
ている、各種のスパツタリング装置に適用でき、
かつ従来ターゲツトと同一条件にて、スパツタリ
ング被膜形成速度が大幅に向上し、生産性及び経
済性向上に大きく寄与する。 The target according to the present invention can be applied to various sputtering devices currently in practical use.
Moreover, under the same conditions as conventional targets, the sputtering film formation speed is greatly improved, greatly contributing to improved productivity and economic efficiency.
実施例
ターゲツトとして、ターゲツト面が、それぞれ
（100）面、（110）面、（211）面、（111）面を有す
る４種の外径76mm×厚み４mm寸法からなるMn−
Zn単結晶フエライト板を用い、高周波スパツタ
リング装置にて、投入パワー100W、スパッタAr
圧力２×10-2Torrの条件で、スパツタリングを
行なつた際のターゲツト浸食速度を測定した。な
お、スパツタリング時の各ターゲツトの結晶面に
おけるエロージヨンは、板厚み方向に均一であつ
た。Example The target was Mn-4, which had target surfaces of (100) plane, (110) plane, (211) plane, and (111) plane, each of which had an outer diameter of 76 mm and a thickness of 4 mm.
Using a Zn single-crystal ferrite plate, sputtering Ar
The target erosion rate was measured during sputtering under a pressure of 2×10 -2 Torr. Note that the erosion in the crystal plane of each target during sputtering was uniform in the thickness direction of the plate.
第１図に示す測定結果から明らかなように、
ターゲツト面に（100）面を有するこの発明の
ターゲツトの場合、（110）面、（211）面、（111）
面を有する比較ターゲツトに比べ、ターゲツト浸
食速度が20％以上速いことが分る。 As is clear from the measurement results shown in Fig. 1, in the case of the target of this invention having a (100) plane on the target surface, (110) plane, (211) plane, and (111) plane.
It can be seen that the target erosion rate is more than 20% faster than the comparison target with a surface.
発明の効果
この発明によるターゲツトは、ターゲツト表面
の全てを（100）結晶面からなる単結晶ソフトフ
エライトより構成したことにより、従来のターゲ
ツトに対して、スパツタリング速度が著しく向上
する利点がある。ADVANTAGEOUS EFFECTS OF THE INVENTION The target according to the present invention has the advantage that the sputtering speed is significantly improved compared to conventional targets because the entire surface of the target is made of single-crystal soft ferrite consisting of (100) crystal planes.
第１図は結晶面とスパツタリング時のターゲツ
ト浸食速度との関係を示すグラフである。
FIG. 1 is a graph showing the relationship between crystal planes and target erosion rate during sputtering.
Claims (1)
なる単結晶ソフトフエライトより構成されたこと
を特徴とするスパツタリング用ターゲツト。1. A sputtering target characterized in that the entire target surface is composed of single-crystal soft ferrite consisting of (100) crystal planes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12877986A JPS62284069A (en) | 1986-06-02 | 1986-06-02 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12877986A JPS62284069A (en) | 1986-06-02 | 1986-06-02 | Target for sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62284069A JPS62284069A (en) | 1987-12-09 |
| JPH0341545B2 true JPH0341545B2 (en) | 1991-06-24 |
Family
ID=14993254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12877986A Granted JPS62284069A (en) | 1986-06-02 | 1986-06-02 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62284069A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69102851T2 (en) * | 1990-10-09 | 1995-02-16 | Nippon Electric Co | Process for the production of a Ti / TiN / Al contact using a reactive sputtering process. |
-
1986
- 1986-06-02 JP JP12877986A patent/JPS62284069A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62284069A (en) | 1987-12-09 |
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