JPS63250115A - Film-formation device by sputtering - Google Patents
Film-formation device by sputteringInfo
- Publication number
- JPS63250115A JPS63250115A JP8434887A JP8434887A JPS63250115A JP S63250115 A JPS63250115 A JP S63250115A JP 8434887 A JP8434887 A JP 8434887A JP 8434887 A JP8434887 A JP 8434887A JP S63250115 A JPS63250115 A JP S63250115A
- Authority
- JP
- Japan
- Prior art keywords
- target
- semiconductor substrate
- center
- substrate
- peripheral edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- 238000013459 approach Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＩＣ製造における金属膜等の成膜装置、特に急
峻な段差部の被覆度を改善する機構を有するスパッター
成膜装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a film forming apparatus for forming metal films and the like in IC manufacturing, and particularly to a sputter film forming apparatus having a mechanism for improving coverage of steep step portions.
従来のスパッター成膜装置はターゲットと半導体基板と
を一定距離を保って互いに平行に固定し、ターゲットよ
りマグネトロン放電によりスパッターされる中性原子を
半導体基板に被着せしめる構成となっていた。A conventional sputter film forming apparatus has a structure in which a target and a semiconductor substrate are fixed parallel to each other with a certain distance between them, and neutral atoms sputtered from the target by magnetron discharge are deposited on the semiconductor substrate.
上述した従来のスパッター成膜装置においてはターゲッ
トと半導体基板とが一定距離を保って互いに平行に固定
されており、かつターゲットよりスパッターされる原子
数はターゲットの垂直方向に多く、垂直方向からはずれ
ると少なくなる傾向にあるため（第２図参照）、半導体
製造過程において構造的に段差部の急峻な場所には被着
し難く。In the conventional sputter film forming apparatus described above, the target and the semiconductor substrate are fixed parallel to each other with a certain distance between them, and the number of atoms sputtered from the target is large in the vertical direction of the target, and the number of atoms sputtered from the target increases when the target deviates from the vertical direction. Since it tends to decrease (see FIG. 2), it is difficult to adhere to places with steep structural steps in the semiconductor manufacturing process.
被覆度が悪いという欠点がある。It has the disadvantage of poor coverage.
このため、従来装置では、第３図に示すように基板２に
向き合ったターゲット１の対称面１ａを中心に向けて傾
斜させて円錐状に形成する、或いは第４図に示すように
ターゲット１の大きさを半導体基板２の約２倍の大きさ
にする等の改善対策がなされているが、被覆度は約６０
％である。又、第３図に示す特殊形状のターゲット１は
冶金的成法において困運さがあり、品質的に不安定であ
り、また第４図に示す大型ターゲット１はロスが多く、
コスト面で損であるという欠点がある。For this reason, in conventional apparatuses, the symmetry plane 1a of the target 1 facing the substrate 2 is inclined toward the center to form a conical shape as shown in FIG. 3, or the target 1 is formed into a conical shape as shown in FIG. Measures have been taken to improve the size, such as making the size approximately twice that of the semiconductor substrate 2, but the degree of coverage is approximately 60%.
%. Further, the specially shaped target 1 shown in FIG. 3 has problems in metallurgy and is unstable in quality, and the large target 1 shown in FIG. 4 has a lot of loss.
The disadvantage is that it is a loss in terms of cost.
本発明の目的は前記問題点を解消したスパッター装置を
提供することにある。An object of the present invention is to provide a sputtering apparatus that solves the above-mentioned problems.
本発明は被着すべき膜組成と同一組成物よりなるターゲ
ットに半導体基板を対向させ、該基板にスパッター成膜
を行うスパッター成膜装置において、半導体基板の中心
とターゲットの中心との間の距離を一定に保ち半導体基
板の周端縁を順次ターゲットに近づけつつ半導体基板を
その中心を軸として回転させる機構を装備したことを特
徴とするスパッター成膜装置である。The present invention relates to a sputter film forming apparatus that performs sputter film formation on a target made of the same composition as the film to be deposited by facing the semiconductor substrate, and the distance between the center of the semiconductor substrate and the center of the target. This sputter film forming apparatus is characterized by being equipped with a mechanism that rotates the semiconductor substrate around its center while keeping the peripheral edge of the semiconductor substrate constant and sequentially bringing the peripheral edge of the semiconductor substrate closer to the target.
以下、本発明の一実施例を図により説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.
第１図において、１はターゲット、２は半導体基板、３
は基板保持台である。半導体基板２は基板保持台３に保
持されており、基板保持台３はその中心軸の回りに回転
し、かつ半導体基板２の中心とターゲット１の中心との
間の距離Ｑ１を一定に保ち半導体基板２の周端縁２ａ、
２ｂを回転に伴い順次ターゲットに近づける。したがっ
て半導体基板２の一端縁２ａに注目すると、回転に伴っ
てまず基板２の一端縁２ａは徐々に２′で示す位置に移
動しターゲット１に近づき（この場合、他端縁２ｂはタ
ーゲット１より遠のく）、次に２で示す位置に移動し、
さらに２′で示す位置に移動する（この場合、他端縁２
ｂはターゲット１に近づく）。In FIG. 1, 1 is a target, 2 is a semiconductor substrate, and 3 is a target.
is a substrate holding stand. The semiconductor substrate 2 is held by a substrate holder 3, which rotates around its central axis and keeps the distance Q1 between the center of the semiconductor substrate 2 and the center of the target 1 constant. A peripheral edge 2a of the substrate 2,
2b is brought closer to the target one by one as it rotates. Therefore, if we pay attention to one edge 2a of the semiconductor substrate 2, as it rotates, the one edge 2a of the substrate 2 gradually moves to the position indicated by 2' and approaches the target 1 (in this case, the other edge 2b is closer to the target 1). move away), then move to the position indicated by 2,
Further move to the position indicated by 2' (in this case, the other edge 2'
b approaches target 1).
本発明のスパッター成膜装置によれば半導体基板とター
ゲットの中心間距離は一定に保ち半導体基板の周端縁を
回転に伴いターゲットに近づけ、かつ半導体基板をその
中心軸として回転せしめ、半導体装置の急峻な段差部を
第２図に示すようなターゲットよりの原子強度分布の強
い方向に向かわしめるものである。According to the sputter film forming apparatus of the present invention, the distance between the centers of the semiconductor substrate and the target is kept constant, the peripheral edge of the semiconductor substrate approaches the target as it rotates, and the semiconductor substrate is rotated about its central axis, thereby forming a semiconductor device. This is to direct the steep stepped portion toward the direction where the atomic intensity distribution is stronger than the target, as shown in FIG.
以上説明したように本発明は半導体基板とターゲットの
中心間距離は一定とし半導体基板の両端を交互にターゲ
ットに近づけ、かつ半導体基板をその中心を軸と−して
回転せしめることにより、半導体装置の急峻な段差部の
′被覆度を約８０％まで改善できる効果がある。又、タ
ーゲットも半導体基板の約１．２倍の円板とすることが
でき、特殊形状ターゲットや大型円板ターゲットによる
品質不安定性やコスト的損失を改善する効果がある。As explained above, in the present invention, the distance between the centers of the semiconductor substrate and the target is constant, both ends of the semiconductor substrate are brought closer to the target alternately, and the semiconductor substrate is rotated around its center, thereby manufacturing a semiconductor device. This has the effect of improving the degree of coverage of steep stepped portions to about 80%. Furthermore, the target can be made into a disk approximately 1.2 times the size of the semiconductor substrate, which has the effect of improving quality instability and cost losses caused by special-shaped targets or large disk targets.
第１図は本発明の実施例の縦断面図、第２図はターゲッ
トよりスパッタ゛さ゛れる原子強度の方向分布の説明図
、−第３図は特殊形状ターゲットを用いた従来例の断面
図、第“４図は大型円板ターゲット用いた従来例の断面
図である。
１・・・ターゲット ２・・・半導体基板３・
・・基板保持台Fig. 1 is a longitudinal cross-sectional view of an embodiment of the present invention, Fig. 2 is an explanatory diagram of the directional distribution of atomic intensity sputtered from a target, - Fig. 3 is a cross-sectional view of a conventional example using a specially shaped target; "Figure 4 is a cross-sectional view of a conventional example using a large disk target. 1...Target 2...Semiconductor substrate 3.
・・Substrate holding stand
Claims (1)
トに半導体基板を対向させ、該基板にスパッター成膜を
行うスパッター成膜装置において、半導体基板の中心と
ターゲットの中心との間の距離を一定に保ち半導体基板
の周端縁を順次ターゲットに近づけつつ半導体基板をそ
の中心を軸として回転させる機構を装備したことを特徴
とするスパッター成膜装置。(1) In a sputter film forming apparatus that performs sputter film formation on a semiconductor substrate facing a target made of the same composition as the film to be deposited, the distance between the center of the semiconductor substrate and the center of the target. A sputter film forming apparatus characterized by being equipped with a mechanism that rotates a semiconductor substrate around its center while keeping the peripheral edge of the semiconductor substrate constant and sequentially bringing the peripheral edge of the semiconductor substrate closer to a target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8434887A JPS63250115A (en) | 1987-04-06 | 1987-04-06 | Film-formation device by sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8434887A JPS63250115A (en) | 1987-04-06 | 1987-04-06 | Film-formation device by sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63250115A true JPS63250115A (en) | 1988-10-18 |
Family
ID=13828007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8434887A Pending JPS63250115A (en) | 1987-04-06 | 1987-04-06 | Film-formation device by sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63250115A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01270321A (en) * | 1988-04-22 | 1989-10-27 | Anelva Corp | Sputtering device |
-
1987
- 1987-04-06 JP JP8434887A patent/JPS63250115A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01270321A (en) * | 1988-04-22 | 1989-10-27 | Anelva Corp | Sputtering device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2962912B2 (en) | Sputter cathode for coating substrates with cathode sputtering equipment | |
| JPH036990B2 (en) | ||
| JPH0450653B2 (en) | ||
| JPS63250115A (en) | Film-formation device by sputtering | |
| JP4005172B2 (en) | Double-sided simultaneous film formation method and apparatus | |
| JPS59173265A (en) | Sputtering device | |
| JPS61235560A (en) | Magnetron sputtering device | |
| JP2648111B2 (en) | Collimator | |
| JPH03104864A (en) | Sputtering cathode | |
| JPS59179783A (en) | Sputtering target | |
| JP3506782B2 (en) | Manufacturing method of optical thin film | |
| JP2746292B2 (en) | Sputtering equipment | |
| JPH0360120A (en) | Sputtering | |
| JPS60194069A (en) | Sputter target and sputtering method | |
| JPS6328985B2 (en) | ||
| JPS63103065A (en) | Film formation by sputtering | |
| JPH01268867A (en) | Magnetron sputtering device | |
| JPH04183855A (en) | Formation of sputter film | |
| JPS62287069A (en) | Sputtering apparatus | |
| JPH0194552A (en) | Manufacture of magneto-optical recording medium | |
| JPS619837A (en) | Production for magnetic recording medium | |
| JPS63188843A (en) | Production of magneto-optical disk | |
| JPH06306598A (en) | Si target material for magnetron sputtering | |
| JPH06322538A (en) | Sputtering device | |
| KR19980021240A (en) | Semiconductor device manufacturing method |