JPH0215440A - Magneto-optical recording medium and production thereof - Google Patents
Magneto-optical recording medium and production thereofInfo
- Publication number
- JPH0215440A JPH0215440A JP16470888A JP16470888A JPH0215440A JP H0215440 A JPH0215440 A JP H0215440A JP 16470888 A JP16470888 A JP 16470888A JP 16470888 A JP16470888 A JP 16470888A JP H0215440 A JPH0215440 A JP H0215440A
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- optical recording
- recording medium
- ptmnsb
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000013078 crystal Substances 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000005415 magnetization Effects 0.000 abstract description 13
- 239000010408 film Substances 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910019041 PtMn Inorganic materials 0.000 description 3
- 229910001004 magnetic alloy Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910016964 MnSb Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
- G11B11/10589—Details
Abstract
Description
【発明の詳細な説明】
（技術分野）
この発明は、光磁気記録媒体およびその製造方法に関す
るものである。さらに詳しくは、この発明は、ＰｔＭｎ
Ｓｂ薄膜からなり、大きな保磁力と垂直磁化優位性を有
する光磁気記録媒体およびその製造方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a magneto-optical recording medium and a method for manufacturing the same. More specifically, the present invention provides PtMn
The present invention relates to a magneto-optical recording medium made of an Sb thin film and having a large coercive force and superior perpendicular magnetization, and a method for manufacturing the same.
（背景技術）
近年、記録媒体に高密度、高アクセス速度がますます要
求されてきており、このような要請に応えるものとして
光磁気記録方式、光記録方式が注目されてきている。(Background Art) In recent years, there has been an increasing demand for high density and high access speed for recording media, and magneto-optical recording systems and optical recording systems are attracting attention as solutions that meet these demands.
この、光磁気記録方式は、垂直磁気記録方式や光記録方
式に比べて書替え可能でかつ記録密度を高くすることが
できるという優位性を有している。This magneto-optical recording system has advantages over perpendicular magnetic recording systems and optical recording systems in that it is rewritable and can increase recording density.
光磁気記録方式は、偏光した光束が磁性合金で反射する
際に、その偏光面が磁性合金の磁化の状態に応じて回転
するという原理を利用するものであり、このような原理
に基づく光磁気記録方式の記録材料としては、書き込み
時には、■垂直磁気異方性が大きくいわゆる垂直磁化膜
となること、■保磁力が高いこと、■キューリー点が適
度に低いこと等の磁気特性が要求され、また、再生時に
は、■カー回転角（θ１）が大きいこと、■カー・しス
テリシスの角型性が高いこと、■反射率が高いこと等の
磁気光学特性が要求されている。また記録材料を構成す
る磁性合金としては、その結晶サイズが小さく均一であ
り、耐久性に優れていることが必要とされてもいる。The magneto-optical recording method utilizes the principle that when a polarized light beam is reflected by a magnetic alloy, the plane of polarization rotates depending on the state of magnetization of the magnetic alloy. As a recording material for this recording method, during writing, magnetic properties are required such as: 1) having a large perpendicular magnetic anisotropy to form a so-called perpendicular magnetization film, 2) having a high coercive force, and 2) having a moderately low Curie point. Further, during reproduction, magneto-optical properties such as (1) a large Kerr rotation angle (θ1), (2) high squareness of Kerr steresis, and (2) high reflectance are required. Furthermore, the magnetic alloy constituting the recording material is required to have a small and uniform crystal size and to have excellent durability.
このような緒特性を指向する記録材料として、これまで
に種々の光磁気記録媒体が開発されている。たとえば、
キューり点書き込み方式のものとして、Ｔ ｂ Ｆ ｅ
Ｃｏ薄膜やＧｄＴｂＦｅ薄膜があり、耐酸化性を付与
すべくこれらに若干の貴金属元素を添加したものがある
。また、補償点書き込み方式のものとして、Ｔ ｂ Ｃ
ｏ薄膜等がある。Various magneto-optical recording media have been developed as recording materials that are oriented toward such magnetic properties. for example,
As a cue point writing method, T b F e
There are Co thin films and GdTbFe thin films, and some of them have some noble metal elements added to them in order to impart oxidation resistance. In addition, as a compensation point writing method, T b C
o There are thin films etc.
しかしながら、このようなこれまでの光磁気記録媒体は
カー回転角（θｋ）が最大でも０．４５°程度であり、
再生時のＣ／Ｎ比が小さく、ディジタル記録方式に供す
るにも不十分なものであった。However, such conventional magneto-optical recording media have a maximum Kerr rotation angle (θk) of about 0.45°,
The C/N ratio during reproduction was low, and it was insufficient to be used in digital recording systems.
一方、近年、カー回転角（θ、）の大きい光磁気記録媒
体として、θに〜１．２７° （波長λ＝７２０ ｎｎ
、外部磁界ｆｌａｘ 〜１２ｋＯａ）を有するＰｔＭｎ
５ｂ系薄膜が注目されてきているが、これまでに開発さ
れたＰｔＭｎＳｂ系薄膜は容易磁化方向が基板面に平行
で垂直異方性がほとんどなく、また保磁力が小さいとい
う欠点を有するため、光磁気記録媒体として満足できる
ものではなかった。On the other hand, in recent years, as a magneto-optical recording medium with a large Kerr rotation angle (θ, ), θ is ~1.27° (wavelength λ=720 nn
, external magnetic field flux ~12 kOa)
5b-based thin films have been attracting attention, but the PtMnSb-based thin films developed so far have the drawbacks of easy magnetization parallel to the substrate surface, almost no perpendicular anisotropy, and low coercive force. It was not satisfactory as a magnetic recording medium.
（発明の目的）
この発明は、以上の事情をＦＩＰｉまえてなされたもの
であり、大きなカー回転角のＰｔＭｎＳｂ系薄膜の特長
を生かし、しかも垂直異方性と大きな保磁力とを有する
新しい光磁気記録媒体を提供することを目自勺としてい
る。(Objective of the Invention) This invention was made in consideration of the above-mentioned circumstances, and is a new magneto-optical film that takes advantage of the characteristics of the PtMnSb thin film with a large Kerr rotation angle and also has perpendicular anisotropy and a large coercive force. Our goal is to provide recording media.
（発明の開示）
この発明は、上記の目的を実現するために、ＰｔＭｎＳ
ｂの極微細柱状晶構３ｉａ薄膜からなることを特徴とす
る光磁気記録媒体を提供する。(Disclosure of the Invention) In order to achieve the above object, the present invention provides PtMnS
The present invention provides a magneto-optical recording medium characterized by comprising a thin film having an ultrafine columnar crystal structure 3ia.
また、この発明は、このような光磁気記録媒体の製造方
法として、表面に極微細突起を有する基板上に、ＰｔＭ
ｎＳｂの極微細柱状晶構造薄膜を形成することを特徴と
する光磁気記録媒体の製造方法をも提供する。The present invention also provides a method for manufacturing such a magneto-optical recording medium, in which PtM is deposited on a substrate having ultrafine protrusions on the surface.
The present invention also provides a method for manufacturing a magneto-optical recording medium characterized by forming an nSb ultrafine columnar crystal thin film.
ここでいうＰｔＭｎＳｂ記録媒体の極微細柱状晶構造薄
膜は、たとえば第１図に示したような、基板（１）の突
起（２）上に形成した
ＰｔＭｎＳｂの極微細柱状晶（３）からなっており、た
とえばその径０．０２〜５μｍ、高さ０．０５〜５μｍ
、分布密度５ｘｌＯ’ 〜５ｘ１０’個／ｌｒａ”のＰ
ｔＭｎＳｂ柱状晶からなる薄膜を好適なものとして例示
することができる。ＰｔＭｎＳｂの元素組成については
適宜に変更することができることはいうまでもない。The ultrafine columnar crystal structure thin film of the PtMnSb recording medium referred to here is composed of ultrafine columnar crystals (3) of PtMnSb formed on protrusions (2) of a substrate (1), as shown in FIG. For example, its diameter is 0.02 to 5 μm, and its height is 0.05 to 5 μm.
, distribution density 5xlO' ~ 5x10'pieces/lra'' P
A suitable example is a thin film made of tMnSb columnar crystals. It goes without saying that the elemental composition of PtMnSb can be changed as appropriate.
この発明は、このようなＰｔＭｎ５ｂｉ膜に５０００ａ
以上の大きな保磁力と垂直磁化優位性を持たせている。In this invention, a 5000a film is applied to such PtMn5bi film.
It has a large coercive force and superior perpendicular magnetization.
大きな保磁力と垂直磁化優位性は、その結晶粒界がある
程度酸化されることにより極微細柱状晶が磁気的に孤立
化し、また、その形状磁気異方性によって薄膜に垂直磁
化優位性か付与されることによる。The large coercive force and perpendicular magnetization advantage are due to the ultrafine columnar crystals being magnetically isolated by oxidation of their grain boundaries to some extent, and also due to the shape magnetic anisotropy that gives the thin film a perpendicular magnetization advantage. Depends on the situation.
このＰｔＭｎＳｂ極微細柱状晶の粒径等の形態は基板表
面の微細突起の大きさ、分布密度に依存し、表面に適度
な微細突起を有する基板を用いることにより、所望の極
微細柱状晶を容易に形成することができる。たとえば具
体的には、基板表面の極微細突起としては、径０．０１
〜１μｍ、高さ０．０２〜２．ｃｚｍ、分布密度８Ｘ１
０５〜８×１０９個／１１２のものとするのが好ましい
。The grain size and other morphology of the PtMnSb ultrafine columnar crystals depend on the size and distribution density of the fine protrusions on the substrate surface, and by using a substrate with appropriate fine protrusions on the surface, it is easy to form the desired ultrafine columnar crystals. can be formed into For example, specifically, the ultrafine protrusions on the substrate surface have a diameter of 0.01
~1μm, height 0.02~2. czm, distribution density 8X1
It is preferable to set it as the thing of 05-8x109 pieces/112.
この場合、基板の材料としては、質プラスチックス、硬
質ガラス（石英）、セラミックス、金属、あるいはそれ
らの酸化物、窒化物、炭化物、珪化物等を広く用いるこ
とができる。In this case, a wide variety of materials such as hard plastics, hard glass (quartz), ceramics, metals, or oxides, nitrides, carbides, and silicides thereof can be used for the substrate.
基板上にＰｔＭｎＳｂ極微細柱状晶構造薄膜を形成する
方法としては、公知の蒸着法を利用することができる。A known vapor deposition method can be used to form the PtMnSb ultrafine columnar crystal thin film on the substrate.
たとえば、真空蒸着法、スパッタリング法、ガスプラズ
マスパッタリング法、イオンビームスパッタリング法、
クラスターイオンビーム法、イオンブレーティング法等
を用いることができる。For example, vacuum evaporation method, sputtering method, gas plasma sputtering method, ion beam sputtering method,
A cluster ion beam method, an ion brating method, etc. can be used.
ＰｔＭｎＳｂ極微細柱状晶構造薄膜の形成源材料として
は、たとえばスパッタリングにより堆積するときには、
ＭｎＳｂ合金ターゲットにｐｔチップを張り付けた複合
ターゲットを使用することができる。また、そのスパッ
タリングの条件としては、基板の温度を室温〜３００℃
程度とし、アルゴンガス等を導入して行うことができる
。As the source material for the PtMnSb ultrafine columnar crystal structure thin film, for example, when deposited by sputtering,
A composite target in which a PT chip is attached to a MnSb alloy target can be used. In addition, the sputtering conditions include a substrate temperature of room temperature to 300°C.
This can be done by introducing argon gas or the like.
このような気相法によるＰｔＭｎＳｂのＮＭの形成に際
しては、ＰｔＭｎＳｂがまず基板（１）の極微細突起（
２）上にに堆積して微粒子を生じ、次いでそのＰｔＭｎ
Ｓｂの微粒子が相互に会合していわゆる超微粒子配向膜
を形成し、さらにそのまま堆積を続けて結晶を成長させ
る。When forming PtMnSb NMs by such a vapor phase method, PtMnSb first forms ultrafine protrusions (
2) Deposit on the PtMn to produce fine particles, then the PtMn
The fine particles of Sb associate with each other to form a so-called ultrafine grain alignment film, and the deposition is continued to grow crystals.
以上のようにして得られたＰｔＭｎＳｂの極微ＩＩＩ柱
状晶構造薄膜は、さらに温度２００℃以上で熱処理をす
ることにより、その磁気特性をさらに向上させることが
できる。この熱処理により保磁力は８０００ｅ以上にす
ることができ、また垂直磁気異方性を増加させ、カー回
転角も０．８°以上にし、より大きなＣ／Ｎ比を実現す
ることができる。The ultrafine III columnar crystal structure thin film of PtMnSb obtained as described above can be further improved in its magnetic properties by further heat treatment at a temperature of 200° C. or higher. This heat treatment makes it possible to increase the coercive force to 8000e or more, increase the perpendicular magnetic anisotropy, increase the Kerr rotation angle to 0.8° or more, and realize a larger C/N ratio.
以下、この発明を実施例に基づいて具体的に説明する。Hereinafter, this invention will be specifically explained based on examples.
もちろん、この発明は、以下の実施例によって限定され
るものではない。Of course, the invention is not limited to the following examples.
実施例Ｉ
Ａｒガスプラズマエツチングにより表面に微小突起を形
成したプラスチック板を基板とし、この基板上に高周波
スパッタリング法によりＰｔＭｎ５ｂをスパッタ堆積さ
せ、ＰｔＭｎＳｂ極微細柱状晶構造薄膜からなる光磁気
記録媒体を作製しな。Example I A plastic plate with minute protrusions formed on its surface by Ar gas plasma etching was used as a substrate, and PtMn5b was sputter-deposited on this substrate by high-frequency sputtering to produce a magneto-optical recording medium consisting of a PtMnSb ultra-fine columnar crystal structure thin film. Shina.
この場合、ターゲットとしては、ＭｎＳｂ合金ターゲッ
トに５ｒａｌ角のｐｔチップを張り合わせた複合ターゲ
ットを使用した。またスパッタリング条件としては、ス
パッタ電力２００１４． Ａ ｒガス圧力２ Ｘ １０
−２Ｔｏｒｒ、スパッタ時間約１時間を採用した。In this case, a composite target was used as a target, which was a MnSb alloy target and a PT chip of 5 ral square. The sputtering conditions include sputtering power of 20014. A r gas pressure 2 x 10
-2 Torr and sputtering time of about 1 hour were used.
得られた薄膜の磁気特性を測定した結果、第２図に示す
磁化曲線を得た。これにより６５００ｅという大きな保
磁力が確認され、また垂直磁化優位性も確認された。As a result of measuring the magnetic properties of the obtained thin film, the magnetization curve shown in FIG. 2 was obtained. As a result, a large coercive force of 6500e was confirmed, and the predominance of perpendicular magnetization was also confirmed.
実施例２
上記実施例１で得た薄膜を３５０℃にて約３０分間真空
加熱処理した。Example 2 The thin film obtained in Example 1 above was subjected to vacuum heat treatment at 350° C. for about 30 minutes.
得られた薄膜の磁気特性を測定した結果、保磁力は９３
００ｅに増加し、またカー回転角も１．１５゜と大きな
値を示した。As a result of measuring the magnetic properties of the obtained thin film, the coercive force was 93
00e, and the Kerr rotation angle also showed a large value of 1.15°.
実施例３
スパッタリング条件として、Ａｒガス圧力を３ ｘ １
０−２Ｔｏｒｒとし、実施例１と同様にしてＰｔＭｎＳ
ｂ極微細柱状晶構造薄膜からなる光磁気記録媒体を作製
した。その後、さらに磁場中（３ｋＯｅ）にて約４００
℃の真空熱処理を行った。Example 3 Sputtering conditions include Ar gas pressure of 3 x 1
PtMnS was heated to 0-2 Torr in the same manner as in Example 1.
A magneto-optical recording medium consisting of a thin film with an extremely fine columnar crystal structure was prepared. After that, approximately 400
℃ vacuum heat treatment was performed.
熱処理後、得られた薄膜の磁気特性を測定した結果、保
磁力は１．２ｋＯａとなり、カー回転角も１．６°とい
う大きな値を示した。After the heat treatment, the magnetic properties of the obtained thin film were measured. As a result, the coercive force was 1.2 kOa, and the Kerr rotation angle also showed a large value of 1.6°.
実施例４
基板の突起の高さを種々変化させて、実施例１と同様に
高周波スパッタリング法によりＰｔＭｎ５ｂを堆積させ
た。Example 4 PtMn5b was deposited by the high frequency sputtering method in the same manner as in Example 1, while varying the height of the protrusions on the substrate.
得られたＰｔＭｎＳｂ薄膜の柱状結晶の分布密度の変化
を第３図に示しな、この図から明らかなように、基板の
突起の高さを低くするに従って結晶密度は増大する。こ
れは、突起の高さが低い程早期にＰｔＭｎＳｂ粒子が会
合し始めるため、結晶粒径が小さくなるためと考えられ
る。FIG. 3 shows changes in the distribution density of columnar crystals in the obtained PtMnSb thin film. As is clear from this figure, the crystal density increases as the height of the protrusions on the substrate is decreased. This is thought to be because the lower the height of the protrusions, the earlier the PtMnSb particles begin to associate, resulting in a smaller crystal grain size.
（発明の効果）
この発明により、カー回転角が大きく、しかも垂直磁化
優位性と大きな保磁力とを有する光磁気記録媒体が得ら
れる。(Effects of the Invention) According to the present invention, a magneto-optical recording medium having a large Kerr rotation angle, a perpendicular magnetization predominance, and a large coercive force can be obtained.
また、この光磁気記録媒体は、熱処理により一層大きな
カー回転角、垂直磁化は位性および保磁力を発揮するよ
うになる。Furthermore, this magneto-optical recording medium exhibits a larger Kerr rotation angle, vertical magnetization, and coercive force by heat treatment.
Ｃ／Ｎ比の大きい光磁気記録媒体が実現される。A magneto-optical recording medium with a high C/N ratio is realized.
さらにまた、極微小突起を有する基板への蒸着により光
磁気記録媒体を製造するこの発明の製造方法によれば、
基板の極微細突起の大きさ、分布を制御することにより
、蒸着方法の種類にかかわらず、容易に、かつ所望の磁
気特性の
ＰｔＭｎＳｂ薄膜の光磁気記録媒体を製造することがで
きる。Furthermore, according to the manufacturing method of the present invention, which manufactures a magneto-optical recording medium by vapor deposition on a substrate having extremely small protrusions,
By controlling the size and distribution of the ultrafine protrusions on the substrate, a magneto-optical recording medium of a PtMnSb thin film having desired magnetic properties can be easily manufactured regardless of the type of vapor deposition method.
第１図は、この発明の光磁気記録媒体を示した模式的断
面図である。
第２図は、この発明の光磁気記録媒体の磁化曲線を示し
た磁気特性図である。
第３図は、基板の突起の高さとＰｔＭｎＳｂ柱状結晶の
分布密度との関係を示した相関図である。
１・・・基 板
２・・・基板の突起FIG. 1 is a schematic cross-sectional view showing a magneto-optical recording medium of the present invention. FIG. 2 is a magnetic characteristic diagram showing the magnetization curve of the magneto-optical recording medium of the present invention. FIG. 3 is a correlation diagram showing the relationship between the height of the protrusions on the substrate and the distribution density of PtMnSb columnar crystals. 1... Board 2... Protrusions on the board
Claims (1)
とを特徴とする光磁気記録媒体。 （２）ＰｔＭｎＳｂの極微細柱状晶が、径 ０．０２〜５μｍ、高さ０．０５〜５μｍ、分布密度５
×１０＾５〜５×１０＾９個／ｍｍ＾２からなる請求項
第（１）項記載の光磁気記録媒体。 （３）表面に極微細突起を有する基板上に、ＰｔＭｎＳ
ｂの極微細柱状晶構造薄膜を形成することを特徴とする
請求項第（１）項記載の光磁気記録媒体の製造方法。 （４）表面に、径０．０１〜１μｍ、高さ０．０２〜２
μｍ、分布密度８×１０＾５〜８×１０＾９個／ｍｍ＾
２の極微細突起を有する基板を用いる請求項第（３）項
記載の光磁気記録媒体の製造方法。 （５）ＰｔＭｎＳｂの極微細柱状晶構造薄膜を形成後、
温度２００℃以上で熱処理をする請求項第（３）項記載
の光磁気記録媒体の製造方法。[Scope of Claims] (1) A magneto-optical recording medium comprising a PtMnSb thin film with an ultrafine columnar crystal structure. (2) Ultrafine columnar crystals of PtMnSb have a diameter of 0.02 to 5 μm, a height of 0.05 to 5 μm, and a distribution density of 5
The magneto-optical recording medium according to claim 1, comprising ×10^5 to 5 × 10^9 pieces/mm^2. (3) PtMnS on a substrate with ultrafine protrusions on the surface.
2. The method of manufacturing a magneto-optical recording medium according to claim 1, further comprising forming a thin film having an ultra-fine columnar crystal structure. (4) On the surface, diameter 0.01-1 μm, height 0.02-2
μm, distribution density 8×10^5 to 8×10^9 pieces/mm^
3. The method for manufacturing a magneto-optical recording medium according to claim 3, wherein a substrate having two ultrafine protrusions is used. (5) After forming a PtMnSb ultrafine columnar crystal structure thin film,
The method for manufacturing a magneto-optical recording medium according to claim (3), wherein the heat treatment is performed at a temperature of 200° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16470888A JPH0215440A (en) | 1988-07-01 | 1988-07-01 | Magneto-optical recording medium and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16470888A JPH0215440A (en) | 1988-07-01 | 1988-07-01 | Magneto-optical recording medium and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0215440A true JPH0215440A (en) | 1990-01-19 |
Family
ID=15798373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16470888A Pending JPH0215440A (en) | 1988-07-01 | 1988-07-01 | Magneto-optical recording medium and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0215440A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1416481A2 (en) * | 2002-10-08 | 2004-05-06 | Matsushita Electric Industrial Co., Ltd. | Magneto-optical recording medium, method of manufacturing magneto-optical recording medium, method of recording on magneto-optical recording medium, and method of reproduction from magneto-optical recording medium |
-
1988
- 1988-07-01 JP JP16470888A patent/JPH0215440A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1416481A2 (en) * | 2002-10-08 | 2004-05-06 | Matsushita Electric Industrial Co., Ltd. | Magneto-optical recording medium, method of manufacturing magneto-optical recording medium, method of recording on magneto-optical recording medium, and method of reproduction from magneto-optical recording medium |
| EP1416481A3 (en) * | 2002-10-08 | 2008-01-23 | Matsushita Electric Industrial Co., Ltd. | Magneto-optical recording medium, method of manufacturing magneto-optical recording medium, method of recording on magneto-optical recording medium, and method of reproduction from magneto-optical recording medium |
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