JPH0336276A - Atomization thin film forming device - Google Patents
Atomization thin film forming deviceInfo
- Publication number
- JPH0336276A JPH0336276A JP1170489A JP17048989A JPH0336276A JP H0336276 A JPH0336276 A JP H0336276A JP 1170489 A JP1170489 A JP 1170489A JP 17048989 A JP17048989 A JP 17048989A JP H0336276 A JPH0336276 A JP H0336276A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- film forming
- substrate
- preheating chamber
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000000889 atomisation Methods 0.000 title abstract description 4
- 239000010408 film Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000002994 raw material Substances 0.000 claims abstract description 19
- 238000005192 partition Methods 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000003595 mist Substances 0.000 claims description 6
- 239000011347 resin Substances 0.000 abstract description 8
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 239000001761 ethyl methyl cellulose Substances 0.000 description 1
- 235000010944 ethyl methyl cellulose Nutrition 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Manufacturing Of Electric Cables (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】
０産業上の利用分ｉ１．ｌＦコ
本発明は、霧化した原料溶液を、加熱された基板に吹き
付け、薄膜を形成する霧化薄膜形成装置に関し、特に予
め樹脂成分を含む膜がパターニングされた基板」二に透
明導電膜を形成する装置に関する。Detailed Description of the Invention 0 Industrial Applications i1. The present invention relates to an atomized thin film forming device that sprays an atomized raw material solution onto a heated substrate to form a thin film, and particularly relates to an atomized thin film forming device that sprays an atomized raw material solution onto a heated substrate to form a thin film, and particularly relates to an atomized thin film forming device that sprays an atomized raw material solution onto a heated substrate to form a thin film. The present invention relates to a forming device.
［従来の技術］
太陽電池、液晶表示装置、プラズマ表示装置等に用いら
れる透明導電膜は、酸化錫や酸化インジウム錫の薄膜に
より形成される。この透明導電膜は、霧化装置（こよっ
て生じた原料溶液の霧を、成膜用ノズルから加熱された
基板に向けて放出し、加熱された基板上で反応、酸膜さ
せる。この際、所定のパターンにパターニングされる。[Prior Art] Transparent conductive films used in solar cells, liquid crystal display devices, plasma display devices, etc. are formed from thin films of tin oxide or indium tin oxide. This transparent conductive film is produced using an atomization device (a mist of the raw material solution generated by this is ejected from a film-forming nozzle toward a heated substrate, reacts on the heated substrate, and forms an acid film. Patterned into a predetermined pattern.
霧化装置により形成される透明導電膜をパターニングす
る方法は幾つか実施されているが、その代表的な一法と
してリフトオフ法が実施されている。この方法は、ガラ
ス板等の基板上にマスク用ペーストをネガティブパター
ンに従ってスクリーン印刷した後、基板を加熱して上記
マスク用ペーストのバインダー成分を気化或は焼去し、
続いて上記のようにして透明導電膜を形成する。上記マ
スク用ペーストは、例えば、炭酸カルシウム、炭酸バリ
ウム、アルミナ等の無機物と、エチルセルロース、メチ
ルセルロース等の樹脂成分、プチルカリビト−ル、酢酸
ブチル等の高沸点溶剤を含む。Several methods have been implemented for patterning a transparent conductive film formed by an atomization device, and a lift-off method is one of the representative methods. This method involves screen printing a mask paste according to a negative pattern on a substrate such as a glass plate, and then heating the substrate to vaporize or burn off the binder component of the mask paste.
Subsequently, a transparent conductive film is formed as described above. The mask paste contains, for example, inorganic substances such as calcium carbonate, barium carbonate, and alumina, resin components such as ethyl cellulose and methyl cellulose, and high boiling point solvents such as butylcaribitol and butyl acetate.
この方法で透明導電膜を形成する場合に、従来用いられ
ている霧化薄膜形成装置近の一例を、第３図に基づいて
説明する。An example of an atomized thin film forming apparatus conventionally used for forming a transparent conductive film using this method will be described with reference to FIG.
この霧化薄膜形成装置では、霧化器１によって原料溶液
を霧化し、これを成膜用ノズル３のスリット状の吐出口
３ａから放出させる。成膜用ノズル３の吐出口３ａの上
方には、成１挨室４が設けられ、そこに霧化された原料
溶液が漂う。In this atomized thin film forming apparatus, a raw material solution is atomized by an atomizer 1 and discharged from a slit-shaped discharge port 3a of a film forming nozzle 3. A deposition chamber 4 is provided above the discharge port 3a of the film deposition nozzle 3, and the atomized raw material solution floats therein.
上記基板６は、その表面が上記成膜室４の天面を形成す
るよう、成膜室４の上を順次連なりながら第３図におい
て、左から右へと保持されながら搬送される。さらに、
上記成膜室４より手前、つまり第３図において成膜室４
の左側に予備加熱室９が形成されている。この予備加熱
室９から上記成膜室４にわたる位置で天面を形成する位
置にある基＠６は、均熱板７を介して背後のヒーター８
によって所定の温度に加熱される。The substrates 6 are conveyed while being held from left to right in FIG. 3 while being successively arranged above the film forming chamber 4 so that their surfaces form the top surface of the film forming chamber 4. moreover,
This side of the film forming chamber 4, that is, the film forming chamber 4 in FIG.
A preheating chamber 9 is formed on the left side. The base @ 6, which is located at a position extending from the preheating chamber 9 to the film forming chamber 4 and forming the top surface, is connected to the heater 8 at the back via the soaking plate 7.
is heated to a predetermined temperature.
この装置には、上記予備加熱室９１’ＴＩ！Ｉから予め
マスク用ペーストを印刷したガラス板等の基板６を導入
し、基板人口１９から予備加熱室９を経て成膜室４を通
過し、基板出口２０から導出されるよう１００次搬送さ
れる。予４１１ｉ加熱室９では、基板６が加熱され、印
刷されたマスク用ペーストの樹脂成分や溶剤が熱（こよ
り分解、蒸発される。This device includes the preheating chamber 91'TI! A substrate 6 such as a glass plate on which a mask paste has been printed in advance is introduced from I, and is transported 100 times from a substrate 19 through a preheating chamber 9 to a film forming chamber 4 to be led out from a substrate outlet 20. . In the preliminary heating chamber 9, the substrate 6 is heated, and the resin components and solvent of the printed mask paste are decomposed and evaporated by heat.
続いて成膜室４では、成膜用ノズル３の先端が基板６の
主面に近接して設けられ、これから成膜室４に放ＬＬｌ
された霧状の原料溶液が基板６０表面に接触する。そう
すると、系板６の表面で、溶？（ｋ中の原料が空気中の
酸素、或いは原料溶液中の水分と反応し、上記基板６の
表面ζこ酸化物の薄膜が形成される。Next, in the film-forming chamber 4, the tip of the film-forming nozzle 3 is provided close to the main surface of the substrate 6, and from this point, the film-forming nozzle 3 is emitted into the film-forming chamber 4.
The misted raw material solution comes into contact with the surface of the substrate 60. Then, on the surface of system plate 6, will it melt? (The raw material in k reacts with oxygen in the air or moisture in the raw material solution, and a thin film of ζ oxide is formed on the surface of the substrate 6.
そして、基板６を基板出口２０から取り出した後、マス
クパターンを除去することにより、所定のパターンの透
明導電膜が残る。After the substrate 6 is taken out from the substrate outlet 20, the mask pattern is removed, leaving a predetermined pattern of the transparent conductive film.
［発明が解決しようとする課題］
しかし、上記従来の装置を用いてパターン化された透明
導電膜を形成する場合、マスク用ペーストの樹脂成分や
溶剤を除去する工程と、霧？こより透明導電膜を形成す
る工程とが、はぼ連続したｌ・ンネル状の予備加熱室９
と成膜室４とで連続して行なわれるため、予備加熱室９
で分量１、蒸発した樹脂成分や溶剤の気化ガスが成膜室
４の中に流入する。すると、これが原料溶液の霧に混じ
ることから、形成された透明導電膜に不純物が多く含ま
れるようになる。その結果、形成された透明導電１慢の
抵抗ｆ直が高くなる等の持性の低下を招くという課題が
あった。[Problems to be Solved by the Invention] However, when forming a patterned transparent conductive film using the above-mentioned conventional apparatus, there are two steps: removing the resin components and solvent of the mask paste, and the process of removing the fog. This step of forming a transparent conductive film is carried out in a preheating chamber 9 in the form of a continuous tunnel.
The preheating chamber 9
A quantity 1 of vaporized gas of the evaporated resin component and solvent flows into the film forming chamber 4. Then, since this is mixed with the mist of the raw material solution, the formed transparent conductive film contains many impurities. As a result, there was a problem that the durability of the formed transparent conductor was lowered, such as the resistance f of the formed transparent conductor being increased.
本発明の目的は、上記課題を＋ｉｉ’泪することのでき
る霧化薄膜形成袋にｔを提伏する串にある。The object of the present invention is to provide a skewer that provides an atomized thin film forming bag that can overcome the above-mentioned problems.
［課題をＪｔＷ消するための手段］
すなわち、上記目的を達成するための本発明による手段
の要旨は、薄膜の原料溶液を霧化する霧化器１と、原料
溶液の霧の吐出口３ａを上方に向けて開口させた成膜用
ノズル３と、同戚ｊ摸用ノズル３の吐出口３ａの」二を
通過するよう一方向に搬送される基板６を天面とする成
膜室４と、同成膜室４より基板の搬送方向に対して手前
に配置された上記基板６を天面どする予備加熱室９と、
少なくとも上記予備加熱室９から成膜室４に亙って上記
基板６を加熱する手段とからなる霧化薄膜形成装置にお
いて、予備加熱室９と成膜室４との間にその部分の空間
を基板６が通過するに必要最小限の間隙に規制する仕切
部４，１’ １４を設け、上記予備加熱室９を−［１記
仕切部材１４側で一部通じる上下のｉＪｌ！ｉ路１６、
Ｉ７に区分し、下側の通１１ａ１７の基板人口１９側に
空気通路１８を接続してなる霧化薄膜形成装置である。[Means for Eliminating the JtW Problems] That is, the gist of the means according to the present invention for achieving the above object is to include an atomizer 1 for atomizing a raw material solution for a thin film, and a discharge port 3a for mist of the raw material solution. A film forming chamber 4 whose top surface is a substrate 6 which is transported in one direction so as to pass through a film forming nozzle 3 opened upward and a discharge port 3a of a similar nozzle 3 for imitation. , a preheating chamber 9 in which the substrate 6 is placed on the top surface, and is located closer to the substrate than the film forming chamber 4 in the direction of conveyance of the substrate;
In an atomized thin film forming apparatus comprising at least means for heating the substrate 6 from the preheating chamber 9 to the film forming chamber 4, a space between the preheating chamber 9 and the film forming chamber 4 is provided. Partitions 4, 1' 14 are provided to restrict the minimum gap necessary for the substrate 6 to pass through, and the preheating chamber 9 is divided into -[1. i road 16,
This is an atomized thin film forming apparatus which is divided into I7 and has an air passage 18 connected to the substrate population 19 side of the lower passage 11a17.
［作 用］
Ｇ
上記本発明による霧化薄膜形成装置では、予備加熱室９
と成膜室４との間が、基板６が１ｉＴＩ過するに必要最
小限の間隙に規制する仕切部材１４で仕切られているの
で、予備加熱室９で発生した（・Ｍ周成分や溶剤の気化
ガスが成膜室４に流入するのが阻止される。加えて、上
記予Ｄ１１１加熱室９を上記仕切部祠１４側で一部通じ
る上下の通路１６．１７に区分し、下ｆｌｔ！Ｉの通路
１７に空気通路１８を接続しているので、温度の低い外
気が空気ｉＩＴ回路１８から下ｆｌｌ！ｌの通路Ｉ６を
経て、比較的温度の高い上０１すの通路１７へと入り、
上側の通路１７から外部へ流出するという空気の対流れ
が形成される。このため、予備加熱室９で発生した樹脂
成分や溶剤の気化ガスが上記成膜室４に流れ込むことな
く強制的にＦＪ＋除される。[Function] G In the atomized thin film forming apparatus according to the present invention, the preheating chamber 9
and the film forming chamber 4 are separated by a partition member 14 that regulates the gap to the minimum necessary for the substrate 6 to pass through 1iTI. The vaporized gas is prevented from flowing into the film forming chamber 4. In addition, the pre-D111 heating chamber 9 is divided into upper and lower passages 16 and 17 that partially communicate on the partition part shrine 14 side, and the lower flt! Since the air passage 18 is connected to the passage 17 of the air iIT circuit 18, the outside air with a low temperature enters the passage 17 of the upper part, which has a relatively high temperature, through the passage I6 of the lower full!l,
A countercurrent flow of air is formed which flows out from the upper passage 17 to the outside. Therefore, the vaporized gases of the resin components and solvent generated in the preheating chamber 9 do not flow into the film forming chamber 4 and are forcibly removed by FJ+.
［実 施 例コ
次に、第１図と第２図を参照しながら、本発１月の実施
例について具体的に説明する。[Example] Next, with reference to Figures 1 and 2, the example of the January issue will be explained in detail.
ガラス板等の基板６が両１１１１１を保持された秋態で
第３図において左から右へと搬送される。基板入口１９
から基板出口２０に至る基板６の搬送経路には、当該基
板６を天面とし、両側及び底面をフレー、、！、１Ｌ１
２で囲まれたｌ・ンネル状の予備加熱室９、成膜室４及
び基板搬出室１０が順次連続して形成されている。A substrate 6 such as a glass plate is held by both 11111 and is conveyed from left to right in FIG. Board entrance 19
The conveyance path of the substrate 6 from the substrate outlet 20 includes the substrate 6 as the top surface, and both sides and the bottom surface as flaps,...! , 1L1
A tunnel-shaped preheating chamber 9 surrounded by 2, a film forming chamber 4, and a substrate unloading chamber 10 are successively formed.
薄膜形成用の原料溶液を霧化する霧化器１を備え、この
霧化器１の上方には上に向けて、成膜用ノズル３が延長
して設けられ、この成１摸用ノズル３の上に上記成膜室
４カ同己置されている。It is equipped with an atomizer 1 that atomizes a raw material solution for forming a thin film, and a film forming nozzle 3 is provided above the atomizer 1 to extend upward. The four film forming chambers mentioned above are placed on top of each other.
上記霧化器１に於いて霧化された原料溶液の霧は、上記
ノズル３の吐出口３ａから成膜室４の中に放出される。The mist of the raw material solution atomized in the atomizer 1 is discharged into the film forming chamber 4 from the discharge port 3a of the nozzle 3.
成膜室４の基板搬出室１０寄り側には、排気路５が形成
され、基板６の表面の薄膜の成膜に寄与しなかった霧状
の原料溶液がこのＪｕｌ気略５からｆｕｌｌ’出される
。An exhaust path 5 is formed on the side of the film forming chamber 4 closer to the substrate unloading chamber 10, and the atomized raw material solution that did not contribute to the formation of a thin film on the surface of the substrate 6 is fully discharged from the exhaust path 5. It will be done.
手心１１１加熱室９、成膜室４及び基板題出室１０にお
いて、搬送される基板６の上面側には熱伝導良好な均熱
板７が設けられ、さらにその背後にヒーター８が設けら
れている。このｌニーター８が発熱することにより、上
記均熱板７を介し一〇−
て基板６が加熱される。In the heating chamber 9, the film forming chamber 4, and the substrate preparation chamber 10, a heat equalizing plate 7 with good heat conduction is provided on the upper surface side of the substrate 6 being transported, and a heater 8 is further provided behind it. There is. The heat generated by the kneader 8 heats the substrate 6 via the heat equalizing plate 7.
上記予４１ｉｉ加熱室９と成膜室４との間に仕切部材１
４が設けられ、ここで基板６の下面ＩＩ＋の間隙１３が
同基板６が通過するに必要最小限の間隙に規制されてい
る。さらに、予備加熱室９の中には同加熱室９を上下の
室１７．１６に仕切る仕切板１５が押入されている。こ
の仕切板１５は上記仕切部桐１４の手前まで導入され、
予備加熱室９において上下に仕切られた室１７．１６は
予備加熱室９の奥で通じている。さらに、下の室１６は
、基板人口１９ｆｌｌすにおいて空気通路１８と接続さ
れている。A partition member 1 is provided between the heating chamber 9 and the film forming chamber 4.
4 is provided, and the gap 13 of the lower surface II+ of the substrate 6 is regulated to the minimum gap necessary for the substrate 6 to pass through. Further, a partition plate 15 is inserted into the preheating chamber 9 to partition the heating chamber 9 into upper and lower chambers 17 and 16. This partition plate 15 is introduced to the front of the partition part paulownia 14,
The chambers 17 and 16 partitioned into upper and lower parts of the preheating chamber 9 communicate with each other at the back of the preheating chamber 9. Furthermore, the lower chamber 16 is connected to an air passage 18 at the substrate surface 19.
既に述べたように、上記予備加熱室９では、上下の室１
７．１８の温度差により、空気通路工８から下の室１６
及び」二の室１７を経て基板入口１９に至る対流が生じ
、これによって予備加熱室９の中で発生したガスが同加
熱室９からｔｅｌ“出される。この場合において、上記
基板人口１８に、上の室１７に通じる煙突状の排気口を
形成すると上記対流が一層助長される。As already mentioned, in the preheating chamber 9, the upper and lower chambers 1
7. Due to the temperature difference of 18, the air passageway 8 to the lower chamber
Convection flows through the second chamber 17 to the substrate inlet 19, and the gas generated in the preheating chamber 9 is discharged from the heating chamber 9.In this case, the substrate population 18 is Forming a chimney-shaped exhaust port communicating with the upper chamber 17 further promotes the above-mentioned convection.
９−
なお、上記の実施例では、予備加熱室９で発生したガス
が対流のみにより拙：気される場合を示したが、例えば
、空気ｉｉＴ＋ｆ８１８側から予備加熱室９の中のガス
を吸引する手段を設置して、適宜強制的に吸引排気する
こともできる。9- In addition, in the above embodiment, a case was shown in which the gas generated in the preheating chamber 9 is evaporated only by convection, but for example, the gas in the preheating chamber 9 may be sucked from the air iiT+f818 side. It is also possible to install a means to force suction and exhaust as appropriate.
［発明の効果コ
以上説明した通り、本発明の装置によれば、成膜室４に
予備加熱室９で発生したマスク用ペーストに含まれる樹
脂成分や溶剤の気化ガスが浸入して、透明導電膜を形成
する原料溶液の霧に混入しないため、特性の良好な薄膜
を成膜出来るという優れた効果が得られる。[Effects of the Invention] As explained above, according to the apparatus of the present invention, the vaporized gas of the resin component and solvent contained in the mask paste generated in the preheating chamber 9 enters the film forming chamber 4, and the transparent conductive Since it does not mix with the mist of the raw material solution that forms the film, it is possible to form a thin film with good properties, which is an excellent effect.
４、図面の簡、ｉ、ｌｉな説明
第１図は、本発明の実施例を示す霧化薄膜形成装置の（
僅略縦断側面図、第２図は、第１図のＡ−Ａ線拡大断面
図図、第３図は、従来例を示す霧化薄膜形成装置の概略
縦断側面図、第４図は、第３図のＢ−Ｂ線拡大断面図で
ある。4. Brief explanation of the drawings FIG. 1 shows an atomized thin film forming apparatus ((
2 is an enlarged sectional view taken along the line A-A in FIG. 1, FIG. 3 is a schematic vertical side view of a conventional atomized thin film forming apparatus, and FIG. FIG. 4 is an enlarged sectional view taken along line BB in FIG. 3;
１・・・霧化器 ３・・・成膜用ノズル ３ａ・・・成
膜用ノズルの吐出口 ４・・・成膜室 ７・・・均熱板
８１０
・・・ヒータ ９・・・予（ｉｌｌｊ；！ｌ［＋熱室
１３・・・予備加無室と成膜室との間の間隙 １４・
・・仕切部材１Ｂ、１７・・・予備加熱室の上下の室
１８・・・空気通路 １９・・・乱板入口1... Atomizer 3... Film-forming nozzle 3a... Discharge port of the film-forming nozzle 4... Film-forming chamber 7... Soaking plate 810... Heater 9... Preliminary (illj;!l[+heat chamber
13... Gap between preliminary heating chamber and film forming chamber 14.
...Partition members 1B, 17...Upper and lower chambers of the preheating chamber
18... Air passage 19... Random board entrance
Claims (1)
の吐出口３ａを上方に向けて開口させた成膜用ノズル３
と、同成膜用ノズル３の吐出口３ａの上を通過するよう
一方向に搬送される基板６を天面とする成膜室４と、同
成膜室４より基板の搬送方向に対して手前に配置された
上記基板６を天面とする予備加熱室９と、少なくとも上
記予備加熱室９から成膜室４に亙って上記基板６を加熱
する手段とからなる霧化薄膜形成装置において、予備加
熱室９と成膜室４との間にその部分の空間を基板６が通
過するに必要最小限の間隙に規制する仕切部材１４を設
け、上記予備加熱室９を上記仕切部材１４側で一部通じ
る上下の通路１６、１７に区分し、下側の通路１７の基
板入口１９側に空気通路１８を接続してなることを特徴
とする霧化薄膜形成装置。An atomizer 1 that atomizes a raw material solution for a thin film, and a film forming nozzle 3 with a discharge port 3a for mist of the raw material solution opened upward.
, a film forming chamber 4 whose top surface is the substrate 6 which is transported in one direction so as to pass above the discharge port 3a of the film forming nozzle 3; In an atomized thin film forming apparatus comprising a preheating chamber 9 having the substrate 6 disposed in the front as a top surface, and means for heating the substrate 6 at least from the preheating chamber 9 to the film forming chamber 4. A partition member 14 is provided between the preheating chamber 9 and the film forming chamber 4 to restrict the space therebetween to the minimum gap necessary for the passage of the substrate 6, and the preheating chamber 9 is placed on the partition member 14 side. An atomized thin film forming apparatus characterized in that it is divided into upper and lower passages 16 and 17 that partially communicate with each other, and an air passage 18 is connected to the substrate inlet 19 side of the lower passage 17.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1170489A JPH0336276A (en) | 1989-06-30 | 1989-06-30 | Atomization thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1170489A JPH0336276A (en) | 1989-06-30 | 1989-06-30 | Atomization thin film forming device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0336276A true JPH0336276A (en) | 1991-02-15 |
| JPH055898B2 JPH055898B2 (en) | 1993-01-25 |
Family
ID=15905908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1170489A Granted JPH0336276A (en) | 1989-06-30 | 1989-06-30 | Atomization thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0336276A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100384513B1 (en) * | 2001-04-06 | 2003-05-22 | 주식회사하나엔지니어링 | Composition for transparent conductive double thin layers with low electric resistances, preparing method thereof and product including the same |
| JP2019069424A (en) * | 2017-10-11 | 2019-05-09 | 凸版印刷株式会社 | Printer and printing method and printed matter |
-
1989
- 1989-06-30 JP JP1170489A patent/JPH0336276A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100384513B1 (en) * | 2001-04-06 | 2003-05-22 | 주식회사하나엔지니어링 | Composition for transparent conductive double thin layers with low electric resistances, preparing method thereof and product including the same |
| JP2019069424A (en) * | 2017-10-11 | 2019-05-09 | 凸版印刷株式会社 | Printer and printing method and printed matter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH055898B2 (en) | 1993-01-25 |
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