JPH0334673B2 - - Google Patents

Info

Publication number
JPH0334673B2
JPH0334673B2 JP56111808A JP11180881A JPH0334673B2 JP H0334673 B2 JPH0334673 B2 JP H0334673B2 JP 56111808 A JP56111808 A JP 56111808A JP 11180881 A JP11180881 A JP 11180881A JP H0334673 B2 JPH0334673 B2 JP H0334673B2
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor layer
layered body
silicon
junction element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56111808A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5814579A (ja
Inventor
Katsumi Murase
Yoshihito Amamya
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56111808A priority Critical patent/JPS5814579A/ja
Publication of JPS5814579A publication Critical patent/JPS5814579A/ja
Publication of JPH0334673B2 publication Critical patent/JPH0334673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56111808A 1981-07-17 1981-07-17 Ｐｎ接合素子 Granted JPS5814579A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56111808A JPS5814579A (ja) 1981-07-17 1981-07-17 Ｐｎ接合素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56111808A JPS5814579A (ja) 1981-07-17 1981-07-17 Ｐｎ接合素子

Publications (2)

Publication Number Publication Date
JPS5814579A JPS5814579A (ja) 1983-01-27
JPH0334673B2 true JPH0334673B2 (cg-RX-API-DMAC7.html) 1991-05-23

Family

ID=14570669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56111808A Granted JPS5814579A (ja) 1981-07-17 1981-07-17 Ｐｎ接合素子

Country Status (1)

Country Link
JP (1) JPS5814579A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0672988B2 (ja) * 1984-02-24 1994-09-14 シチズン時計株式会社 表示装置用薄膜非線形抵抗素子
KR20000066564A (ko) * 1999-04-19 2000-11-15 장용화 다목적 다이오드 센서 및 그 제조 방법

Also Published As

Publication number Publication date
JPS5814579A (ja) 1983-01-27

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