JPH0334253U - - Google Patents

Info

Publication number
JPH0334253U
JPH0334253U JP9505289U JP9505289U JPH0334253U JP H0334253 U JPH0334253 U JP H0334253U JP 9505289 U JP9505289 U JP 9505289U JP 9505289 U JP9505289 U JP 9505289U JP H0334253 U JPH0334253 U JP H0334253U
Authority
JP
Japan
Prior art keywords
pnp transistor
transistor
base
integrated circuit
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9505289U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9505289U priority Critical patent/JPH0334253U/ja
Publication of JPH0334253U publication Critical patent/JPH0334253U/ja
Pending legal-status Critical Current

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Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例による集積回路を示
す接続図、第2図はその動作の説明に供する接続
図、第3図はトランジスタ22が飽和した状態を
示す接続図、第4図は集積回路の全体構成を示す
ブロツク図、第5図は寄生トランジスタの説明に
供する断面図、第6図及び第7図はその動作の説
明に供する接続図である。 1……集積回路、18,22,24,27,3
0……トランジスタ、19,31……寄生トラン
ジスタ。
FIG. 1 is a connection diagram showing an integrated circuit according to an embodiment of the present invention, FIG. 2 is a connection diagram for explaining its operation, FIG. 3 is a connection diagram showing a state in which the transistor 22 is saturated, and FIG. FIG. 5 is a block diagram showing the overall structure of the integrated circuit, FIG. 5 is a sectional view for explaining the parasitic transistor, and FIGS. 6 and 7 are connection diagrams for explaining the operation thereof. 1... Integrated circuit, 18, 22, 24, 27, 3
0...transistor, 19,31...parasitic transistor.

Claims (1)

【実用新案登録請求の範囲】 飽和動作するラテラル型のPNPトランジスタ
と、 上記PNPトランジスタのコレクタからベース
に向かつて電流を流すように接続したダイオード
と を具え、上記ダイオードで上記PNPトランジ
スタの寄生トランジスタに流れるベース電流をバ
イパスするようにした ことを特徴とする集積回路。
[Claims for Utility Model Registration] A lateral type PNP transistor that operates in saturation, and a diode connected so that a current flows from the collector to the base of the PNP transistor, and the diode acts as a parasitic transistor of the PNP transistor. An integrated circuit characterized by bypassing the flowing base current.
JP9505289U 1989-08-10 1989-08-10 Pending JPH0334253U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9505289U JPH0334253U (en) 1989-08-10 1989-08-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9505289U JPH0334253U (en) 1989-08-10 1989-08-10

Publications (1)

Publication Number Publication Date
JPH0334253U true JPH0334253U (en) 1991-04-04

Family

ID=31644334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9505289U Pending JPH0334253U (en) 1989-08-10 1989-08-10

Country Status (1)

Country Link
JP (1) JPH0334253U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021525975A (en) * 2018-05-30 2021-09-27 サーチ フォー ザ ネクスト エルティディSearch For The Next Ltd Circuits and devices including transistors and diodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021525975A (en) * 2018-05-30 2021-09-27 サーチ フォー ザ ネクスト エルティディSearch For The Next Ltd Circuits and devices including transistors and diodes

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