JPH033318A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPH033318A
JPH033318A JP13797089A JP13797089A JPH033318A JP H033318 A JPH033318 A JP H033318A JP 13797089 A JP13797089 A JP 13797089A JP 13797089 A JP13797089 A JP 13797089A JP H033318 A JPH033318 A JP H033318A
Authority
JP
Japan
Prior art keywords
electron
electron beam
lens system
during
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13797089A
Other languages
Japanese (ja)
Inventor
Hiroshi Noguchi
野口 洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13797089A priority Critical patent/JPH033318A/en
Publication of JPH033318A publication Critical patent/JPH033318A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To avoid any needless exposure during blanking process by a method wherein the title electron beam exposure device is provided with a controller controlling the current to an electron lens system so that, during the blanking process, the electron arrested level by an electron arresting case may be raised as high as possible. CONSTITUTION:The title electron beam exposure device wherein the electron beam emitted from an electron beam emitter 2 is focussed by use of electron lens systems 3, 5 to be emitted to the surface of a work 7 while during the interrupting time of the exposure by the use of the electron beam, the electron beam is deflected to an electron arresting case 8 by a blanking deflector 4 is provided with a controller 10 controlling the current to the electron lens system 3 so that the electron arrested level by the electron arresting case 8 during the interrupting time of the exposure may be raised as high as possible. For example, the electron arresting case 8 is provided with a detecting wire with a resistor R inserted thereinto to be grounded and connected to the controller 10. Furthermore, during the blanking process, the current values I A, B, C to the irradiating lens system 3 are controlled to maximize the voltage values VR at both terminals of the resistor R.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電子ビームを用いて加工対象物表面のレジスト
等に露光処理を施す電子ビーム露光装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electron beam exposure apparatus that uses an electron beam to perform exposure processing on a resist or the like on the surface of a workpiece.

〔従来の技術〕[Conventional technology]

第3図は例えば特開昭56−18425号公報に開示さ
れている従来の電子線露光装置の模式図であり、図中1
はハウジング、2はハウジングl内の上部に配設した電
子銃を示している。ハウジング1内には電子銃2の下方
に照射レンズ系3、ブランキング偏向系4、対物レンズ
系5、走査用偏向系6が相互の間に所要の間隔を隔てて
この順序で配設され、更に走査用偏向系6の下方に加工
対象物である試料7が配設されている。そしてブランキ
ング偏向系4と対物レンズ系5との間であって、電子銃
2と試料7とを結ぶ中心線の側方に臨ませて電子捕集筐
8が設置されている。
FIG. 3 is a schematic diagram of a conventional electron beam exposure apparatus disclosed in, for example, Japanese Unexamined Patent Publication No. 56-18425.
2 shows a housing, and 2 shows an electron gun disposed at the upper part inside the housing l. In the housing 1, below the electron gun 2, an irradiation lens system 3, a blanking deflection system 4, an objective lens system 5, and a scanning deflection system 6 are arranged in this order with a required interval between them. Furthermore, a sample 7, which is an object to be processed, is arranged below the scanning deflection system 6. An electron collection housing 8 is installed between the blanking deflection system 4 and the objective lens system 5, facing to the side of the center line connecting the electron gun 2 and the sample 7.

電子捕集筐8は中空矩形状に形成されており、電子銃2
側の面には小孔8aが開口せしめられ、ブランキング時
に偏向された電子ビームE、、E、が前記小孔8aを通
じて電子捕集筐8内に取り込まれるようになっている。
The electron collection housing 8 is formed in a hollow rectangular shape, and the electron gun 2
A small hole 8a is opened in the side surface so that the electron beams E, E, which are deflected during blanking, are taken into the electron collection housing 8 through the small hole 8a.

10は制御部であって、描画時には走査用偏向系6を制
御して電子ビームE0にて試料7表面に描画を行い、ま
たブランキング時にはプランキング偏向系4を制御して
電子ビームを電子捕集筐8内に偏向させて、不必要な露
光を招くことのないように待機せしめるようになってい
る。
Reference numeral 10 denotes a control unit, which controls the scanning deflection system 6 during drawing to draw on the surface of the sample 7 with the electron beam E0, and controls the planking deflection system 4 during blanking to capture the electron beam. The light is deflected into the collecting casing 8 and placed on standby to prevent unnecessary exposure.

而してこのような従来装置にあっては電子銃2から射出
され照射レンズ系3、対物レンズ系5により試料7上に
集束された電子ビームE0は制御部10からのパターン
位置信号に基づいて制御される走査用偏向系6の偏向力
により試料7上を移動されパターン描画を行う。パター
ンを描き終わるとブランキング偏向系4により次のパタ
ーンの描画に移る迄描画を一時的に中断すべく制御部1
0の指令信号により電子線E0を光軸から大きくずらせ
るように偏向力が付与され、偏向した電子ビームE、、
E、を電子捕集筐8の小孔8aから内部に入射させて捕
集する。
In such a conventional apparatus, the electron beam E0 emitted from the electron gun 2 and focused on the sample 7 by the irradiation lens system 3 and the objective lens system 5 is controlled based on the pattern position signal from the control section 10. It is moved over the sample 7 by the deflection force of the controlled scanning deflection system 6 to draw a pattern. When the pattern is drawn, the control unit 1 uses the blanking deflection system 4 to temporarily interrupt the drawing until the next pattern is drawn.
0 command signal, a deflection force is applied to the electron beam E0 to greatly deviate it from the optical axis, and the deflected electron beam E,...
E is made to enter the electron collection housing 8 through the small hole 8a and is collected.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところでこのような従来の電子露光装置にあっては電子
ビームE0の電流分布は長い裾を引いたガウシアン分布
であるためブランキング偏向系4によってブランキング
を行ってもその全てが電子捕集筐8内に捕集し得るわけ
でなく、一部が漏れ電子ビームとして被加工物上のレジ
スト等を感光させることがあり、不必要な露光が発生ず
るという問題があった。
By the way, in such a conventional electron exposure apparatus, the current distribution of the electron beam E0 is a Gaussian distribution with a long tail, so even if blanking is performed by the blanking deflection system 4, all of the current is transferred to the electron collection housing 8. There is a problem in that the electron beams cannot be collected internally, and a portion of the electron beams leaks and exposes resists and the like on the workpiece, resulting in unnecessary exposure.

本発明はかかる事情に鑑みなされたものであって、その
目的とするところはブランキング時にも不必要な感光が
生じないようにした電子ビーム露光装置を提供するにあ
る。
The present invention has been made in view of the above circumstances, and an object thereof is to provide an electron beam exposure apparatus that does not cause unnecessary exposure even during blanking.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係る電子ビーム露光装置は、ブランキング時に
電子捕集筐による電子捕集筐が可及的に大きくなるよう
に電子レンズ系に対する電流制御を行う制御部を具備す
る。
The electron beam exposure apparatus according to the present invention includes a control section that performs current control on the electron lens system so that the electron collection housing becomes as large as possible during blanking.

〔作用〕[Effect]

本発明にあってはこれによってブランキング時に電子レ
ンズ系による電子ビームの集束位置が電子捕集筐に捕集
される電子量が大となる位置に位置決めされることとな
る。
According to the present invention, the focusing position of the electron beam by the electron lens system during blanking is thereby positioned at a position where the amount of electrons collected by the electron collection housing is large.

〔実施例〕〔Example〕

以下本発明をその実施例を示す図面に基づき具体的に説
明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof.

第1図は本発明に係る電子ビーム露光装置(以下本発明
装置という)の模式的縦断面図であり、図中1はハウジ
ング、2はハウジング1内の上部に配設した電子銃を示
している。
FIG. 1 is a schematic vertical sectional view of an electron beam exposure apparatus according to the present invention (hereinafter referred to as the present invention apparatus), in which 1 indicates a housing and 2 indicates an electron gun disposed at the upper part of the housing 1. There is.

電子銃2の下方には照射レンズ系3.ブランキング偏向
系4.対物レンズ系5.走査用偏向系6がこの順序で相
互に所要の間隔を隔てて略直線上に配設され、また走査
用偏向系6の下方には試料7が配設され、更に照射レン
ズ系3と対物レンズ系4との中間には電子銃2と試料7
とを結ぶ中心線の側方に位置して電子捕集筐8が設置さ
れている。電子捕集筐8は中空の直方体形に形成されて
おり、電子銃2と対向する側の面に小孔8aを開口せし
めてあり、ブランキング時に電子線を小孔8aを通じて
内部に取り込むようになっている。電子捕集筐8には抵
抗Rを介装して接地した検出線を設け、これを制御部1
0に接続してあり、電子捕集筐が大きくなると抵抗Rの
両端の電圧値が大きく、逆に電子捕集筐が小さくなると
電圧値が小さくなるようになっている。
Below the electron gun 2 is an irradiation lens system 3. Blanking deflection system 4. Objective lens system5. The scanning deflection systems 6 are arranged in this order on a substantially straight line at a required distance from each other, and the sample 7 is arranged below the scanning deflection systems 6, and the irradiation lens system 3 and the objective lens Electron gun 2 and sample 7 are located between system 4 and
An electron collection housing 8 is installed on the side of the center line connecting the two. The electron collection housing 8 is formed in the shape of a hollow rectangular parallelepiped, and has a small hole 8a opened on the side facing the electron gun 2, so that the electron beam is taken into the inside through the small hole 8a during blanking. It has become. A detection line that is grounded through a resistor R is provided in the electron collection casing 8, and this is connected to the control unit 1.
0, and as the electron collection casing becomes larger, the voltage value across the resistor R increases, and conversely, as the electron collection casing becomes smaller, the voltage value decreases.

制御部10は前記照射レンズ系3、ブランキング偏向系
4、及び走査用偏向系6等に対する給電制御、電子捕集
筐8に付設しである検出線の電圧値のサンプリングを行
うようになっている。
The control unit 10 controls the power supply to the irradiation lens system 3, the blanking deflection system 4, the scanning deflection system 6, etc., and samples the voltage value of the detection line attached to the electron collection housing 8. There is.

第2図(イ)は照射レンズ系3に対する電流と電子ビー
ムの集束点Oとの関係を示す説明図であり、照射レンズ
系3に対する電流を小さくするに伴って電子線の集束点
はA、B、Cの如く順次照射レンズ系3から遠くなるが
、このときの各照射レンズ系3に対する電流値と電子捕
集筐、換言すれば抵抗8両端の電圧値との関係は第2図
(ロ)に示す如くになる。
FIG. 2(a) is an explanatory diagram showing the relationship between the current to the irradiation lens system 3 and the focal point O of the electron beam, and as the current to the irradiation lens system 3 is reduced, the focal point of the electron beam changes to A, As shown in B and C, the distance from the irradiation lens system 3 is shown in Fig. 2 (Ro). ) as shown below.

第2図(ロ)は抵抗8両端の電圧値と照射レンズ系3に
対する電流値との関係を示すグラフであり、横軸に照射
レンズ系に対する電流値を、また縦軸に電圧値をとって
示しである。
Figure 2 (b) is a graph showing the relationship between the voltage value across the resistor 8 and the current value to the irradiation lens system 3, with the horizontal axis representing the current value to the irradiation lens system and the vertical axis representing the voltage value. This is an indication.

このグラフから明らかなように電子線の集束点をB点と
したとき、即ち照射レンズ系3に対する電流値がI、の
とき最大の電圧(負)を示し、照射レンズ系3に対する
電流値がIgよりも大きく、また小さくなるに従って電
流値が低下、換言すれば電子線捕集量が低下することが
解る。従ってブランキング時に電子捕集筐が最大となる
よう、換言すれば抵抗8両端の電圧値が最大となるよう
照射レンズ系3に対する電流値Iを制御すればそれだけ
漏れ電子量を低減し得ることとなる。
As is clear from this graph, when the convergence point of the electron beam is set to point B, that is, when the current value to the irradiation lens system 3 is I, the maximum voltage (negative) is shown, and the current value to the irradiation lens system 3 is Ig. It can be seen that as the current value becomes larger or smaller, the current value decreases, in other words, the amount of electron beam collection decreases. Therefore, if the current value I to the irradiation lens system 3 is controlled so that the electron collection case is maximized during blanking, in other words, the voltage value across the resistor 8 is maximized, the amount of leaked electrons can be reduced accordingly. Become.

なお電流制御の範囲は描画時の電流値の範囲内で制御す
ることとしてもよいが、電子ビームを長時間、例えば1
秒以上ブランキングするときには照射レンズ系3の電流
を描画に最適なものから順次ブランキングに最適な値に
連続的、又は段階的に変化させることとしてもよい。
Note that the range of current control may be within the range of the current value during drawing, but if the electron beam is used for a long time, for example 1
When blanking is performed for more than a second, the current of the irradiation lens system 3 may be changed continuously or stepwise from a value optimal for drawing to a value optimal for blanking.

また照射レンズ系3の電流を変化させて集束位置を変化
させるに代えて、或いはこの電流制御と共に、電子捕集
筐8の位置を上、上移動させることとしてもよい。
Furthermore, instead of changing the current of the irradiation lens system 3 to change the focusing position, or in addition to this current control, the position of the electron collection housing 8 may be moved upward.

〔発明の効果〕〔Effect of the invention〕

以上の如く本発明装置にあっては電子捕集筐による電子
捕集筐が可及的に大となるよう電子レンズ系の電流を制
御するから漏れ電子ビームを低減し得て、不必要な露光
を防止することが出来る等本発明は優れた効果を奏する
も分である。
As described above, in the apparatus of the present invention, the current of the electron lens system is controlled so that the electron collection housing is as large as possible, so leakage electron beams can be reduced and unnecessary exposure can be avoided. The present invention has excellent effects such as being able to prevent this.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係る電子ビーム露光装置の模式図、第
2図(イ)はブランキング時の照射レンズ系に対する電
流値と電子ビーム集束点との関係を、また第2図(ロ)
は電子レンズ系に対する電流値と電子捕集筐の電圧値と
の関係を示すグラフ、第3図は従来の電子ビーム露光装
置の模式図である。 2・・・電子銃      3・・・照射レンズ系4・
・・ブランキング偏向系 5・・・対物レンズ系6・・
・走査用偏向系    7・・・試料8・・・電子捕集
筐 なお、図中、同一符号は同一、又は相当部分を示す。
Figure 1 is a schematic diagram of an electron beam exposure apparatus according to the present invention, Figure 2 (a) shows the relationship between the current value for the irradiation lens system and the electron beam focal point during blanking, and Figure 2 (b)
3 is a graph showing the relationship between the current value for the electron lens system and the voltage value of the electron collection housing, and FIG. 3 is a schematic diagram of a conventional electron beam exposure apparatus. 2...Electron gun 3...Irradiation lens system 4.
...Blanking deflection system 5...Objective lens system 6...
-Scanning deflection system 7...Sample 8...Electron collection casing In the drawings, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] (1)電子ビーム発生手段から発せられた電子ビームを
電子レンズ系で集束し、被加工物表面に投射してこれを
露光する一方、電子ビームによる露光の中断時にブラン
キング偏向手段にて電子ビームを電子捕集筐内に向けて
偏向せしめるようにした電子ビーム露光装置において、 露光の中断時に前記電子捕集筐による電子 捕集量が可及的に大きくなるよう前記電子レンズ系に対
する電流制御を行う制御部を具備することを特徴とする
電子ビーム露光装置。
(1) The electron beam emitted from the electron beam generation means is focused by an electron lens system, and is projected onto the surface of the workpiece to expose it. When the exposure by the electron beam is interrupted, the electron beam is used by the blanking deflection means. In the electron beam exposure apparatus configured to deflect the electron beam toward the inside of an electron collection housing, current control for the electron lens system is performed so that the amount of electrons collected by the electron collection housing is as large as possible when exposure is interrupted. An electron beam exposure apparatus characterized by comprising a control section that performs the following operations.
JP13797089A 1989-05-31 1989-05-31 Electron beam exposure device Pending JPH033318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13797089A JPH033318A (en) 1989-05-31 1989-05-31 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13797089A JPH033318A (en) 1989-05-31 1989-05-31 Electron beam exposure device

Publications (1)

Publication Number Publication Date
JPH033318A true JPH033318A (en) 1991-01-09

Family

ID=15210998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13797089A Pending JPH033318A (en) 1989-05-31 1989-05-31 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPH033318A (en)

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