JPH0332783B2 - - Google Patents
Info
- Publication number
- JPH0332783B2 JPH0332783B2 JP58015913A JP1591383A JPH0332783B2 JP H0332783 B2 JPH0332783 B2 JP H0332783B2 JP 58015913 A JP58015913 A JP 58015913A JP 1591383 A JP1591383 A JP 1591383A JP H0332783 B2 JPH0332783 B2 JP H0332783B2
- Authority
- JP
- Japan
- Prior art keywords
- fluorine
- hydrogen
- developer
- pattern
- carboxylic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
本発明は溶解速度差現像液の像鮮明性増大剤及
びこれを含有する現像用組成物に関する。
現在、可視光線、紫外線、遠紫外線、X線、電
子線などのエネルギー線に感ずる化合物は多くの
分野に利用されており、印刷、塗料、フオトレジ
ストなど工業的に広く実用化され、特に印刷工
業、半導体工業などにおけるパターン形成材料と
して重要な役割を果している。
一般にこれらパターン形成材料としては例えば
アクリル酸アルキル、メタクリル酸アルキル、ア
クリル酸ハロゲノアルキル(特にアクリル酸フル
オロアルキル)、メタクリル酸ハロゲノアルキル
(特にメタクリル酸フルオロアルキル)、桂皮酸ビ
ニル、ビニルアルコール等の単独もしくは共重合
体、アジド化合物を含むノボラツク樹脂、天然ゴ
ム、環化ポリイソプレン、シラン化合物、カルコ
ゲナイトガラスなどが検討されている。これらの
化合物は水溶液又は有機溶液として使用され、目
的の基板上に塗布、乾燥され、溶媒を蒸発させ
て、その被膜を得、次いで被膜上にエネルギー線
を照射してパターンを描画し、更に現像すること
により基板の被膜上にパターンを形成させる。
現像液としては感光性化合物の被膜においてエ
ネルギー線の照射された部分と照射されていない
部分における溶解速度の差を利用して、溶解速度
の差の著しく異なる溶剤が用いられ、一般的には
それぞれの感光性化合物に適した現像液が用いら
れている。しかしながら最近の印刷工業において
は一層の鮮明さが要求され、更に半導体工業にお
いても軽量化、大容量化に伴なつてパターンの微
細化が進み、そのパターンを忠実に鮮明に転写す
ることが増々要求されている。しかるに従来の現
像液では現像後のパターンのキレが悪く、更には
スカムの発生を生じ、斯かる要望には応え難くな
つてきた。斯かる状態の発生を防ぐために現像温
度を高くしたり、強現像液を使用したり、あるい
は現像時間を長くするなどの工夫もされている。
しかしこのような厳しい条件で現像を行うとパタ
ーンがしばしば崩れてしまう欠点がある。
本発明の目的は通常の現像条件で忠実、鮮明な
転写が可能な像鮮明性増大剤を提供することにあ
る。
本発明者は溶解速度差現像液として通常用いら
れている現像液に少量の特定化合物を添加するこ
とにより本発明の目的が達成されることを見い出
した。
即ち本発明は含フツ素カルボン酸又はこれのア
ンモニウム塩もしくは炭素数1〜6の第1級〜3
級アミン塩を有効成分とする溶解度差現像液の像
鮮明性増大剤に係る。
本発明によれば特に微細パターンを得るに際し
てパターンのキレに優れ、スカムの発生が殆どな
いか又は全く生ぜず、忠実且つ鮮明な転写を行う
ことが可能である。更に残つた被膜を転写後に基
板から溶媒で除去するとき被膜の痕跡を残さない
という優れた効果をも伴う。
本発明で使用される含フツ素カルボン酸として
はCOOH基を有する炭化水素又はその誘導体で
あつて、その水素の1部がフツ素原子により置換
された各種の化合物を挙げることができる。好適
な具体例としては式
X(CF2)lCOOH
X(CF2)mC(R1)(R2)(CH2)nCOOH
CF3CF2O(CF2CF2O)nCF2COOH又は
CF3CF2CF2O〔CF(CF3)CF2O〕nCF(CF3)
COOH
(Xは水素、フツ素、CF3CHF、(CF3)2CH又
は(CF3)2CF、R1及びR2は水素又は炭素数1〜
6のアルキル基、lは1〜10、mは0〜10、ただ
しXが水素のとき、mは1〜10、nは0〜3を示
し、式中のフツ素の1部又はCOOH基以外の水
素の1部はフツ素以外のハロゲンにより置換され
ていてもよい。)
で表わされる化合物を例示できる。
尚、フツ素以外のハロゲンとして塩素、臭素を例
示できる。
本発明では上記含フツ素カルボン酸の他に、こ
れのアンモニウム塩もしくは炭素数1〜6の第1
級〜3級アミン塩を使用することもできる。アミ
ンの例としはメチルアミン、エチルアミン、ブチ
ルアミン、ヘキシルアミン、ジメチルアミン、ジ
イソプロピルアミン、トリメチルアミン、トリエ
チルアミン等を挙げることができる。
本発明において含フツ素カルボン酸又はこれの
アンモニウム塩もしくは炭素数1〜6の第1級〜
3級アミン塩の添加量は多いと感光性化合物被膜
の感度を低下させたり、微細パターンを基板より
浮き上がらせたり、被膜を剥離させてしまうこと
があるため少量とする必要がある。通常添加量は
現像液中約0.001〜4%(重量%、以下同様)と
するのが良く、約0.005〜2%が好ましい。
本発明の像鮮明性増大剤は従来公知の溶解速度
差現像液に添加することができる。斯かる従来の
現像液は公知の各種の溶媒かなるものである。斯
かる溶媒の例としては、アルカリなどの水溶液、
シクロヘキサン、ヘプタン、トルエン等の炭化水
素、クロロホルム、塩化メチレン等のハロゲン化
炭化水素、メチルエチルケトン、メチルイソブチ
ルケトン等のケトン、エタノール、イソプロパノ
ール等のアルコール、酢酸エチル、酢酸イソアミ
ル等のエステル、テトラヒドロフラン等のエーテ
ル、その他ジメチルホルムアミド等の種々の溶媒
が例示できる。これらの溶媒は現像液として、そ
れぞれ単独又は混合されて、感光性化合物の分子
量、所望の感度などによつて適宜選択され、ま
た、現像温度および時間も現像液の種類や重合体
の分子量により適宜定められる。本発明の像鮮明
性増大剤を添加した現像用組成物による現像は、
前記の感光性化合物に応じる従来公知の溶解速度
差現像液の現像条件でまたはその附近の条件で適
宜行なえばよい。現像後はリンスを行い、乾燥、
場合によつては焼成することにより所望のパター
ンが形成される。
つぎに実施例および比較例をあげて本発明をさ
らに詳細に説明するが、本発明はそれらの実施例
のみに限定されるものではない。
実施例 1
分子量80万のポリ−2,2,3,4,4,4−
ヘキサフルオロブチルメタクリレート(PFBM
という)の8%メチルイソブチルケトン
(MIBK)溶液をレジスト溶液として、これをシ
リコンウエハー上にスピンコーテイングして膜厚
が0.45μとなるように塗装した。次いで140℃で30
分間プリベークして溶剤を蒸発させレジスト被膜
を得た。
次にERE−302型電子線描画装置(エリオニク
ス社製)を用いて該レジスト被膜に加速電圧
20KV、電流密度1×10-9A/cm2の電子線を照射
時間を種々変化させて照射し、32μのラインアン
ドスペースを描画した。この試料をH
(CF2CF2)3COOHを0.2重量%添加したMIBK:
IPA(イソプロパノール)が1:150(容量比)の
現像液に120秒間浸漬して現像し、直ちにIPAに
60秒間浸漬して洗浄した。レジスト被膜の感度は
4×10-7C/cm2、γ値は4.5であつた。
また比較のためにH(CF2CF2)3COOHを添加し
なかつた他は実施例1と同様にしてパターン(比
較例1)を得た。
実施例 2〜5
第1表に記載の含フツ素カルボン酸を使用した
以外は実施例1と同様にしてレジストパターンを
得た。得られたレジストパターンの特性を同様第
1表に示す。得られたパターンはいずれも含フツ
素カルボン酸を添加しない現像液を用いた場合よ
り断面のキレに優れスカムの発生は殆どみられな
かつた。
参考例 1
含フツ素カルボン酸の代りに含フツ素アルコー
ル(HCF2CF2CH2OH)を使用した以外は実施例
2と同様にしてレジストパターンを得、その特性
を同様に第1表に示す。
以上の実施例1〜5、比較例1及び参考例1で
得られたレジストパターンのシヤープさ、密着性
について調べた結果を第1表に示す。表において
〇は良、◎は優良を意味する。
The present invention relates to an image sharpness enhancer for a differential solution rate developer and a developing composition containing the same. Currently, compounds that are sensitive to energy rays such as visible light, ultraviolet rays, far ultraviolet rays, X-rays, and electron beams are used in many fields, and are widely used in industrial applications such as printing, paints, and photoresists, especially in the printing industry. It plays an important role as a pattern forming material in the semiconductor industry. In general, these pattern-forming materials include, for example, alkyl acrylates, alkyl methacrylates, halogenoalkyl acrylates (especially fluoroalkyl acrylates), halogenoalkyl methacrylates (especially fluoroalkyl methacrylates), vinyl cinnamate, vinyl alcohol, etc. alone or Copolymers, novolak resins containing azide compounds, natural rubber, cyclized polyisoprene, silane compounds, chalcogenite glasses, etc. are being considered. These compounds are used as an aqueous or organic solution, and are coated onto the target substrate, dried, and the solvent is evaporated to obtain a film.The film is then irradiated with energy rays to draw a pattern, and then developed. By doing so, a pattern is formed on the coating of the substrate. As the developer, solvents with significantly different dissolution rates are used, taking advantage of the difference in dissolution rate between areas irradiated with energy rays and areas not irradiated with energy rays in the film of the photosensitive compound. A developer suitable for the photosensitive compound is used. However, in the recent printing industry, even greater clarity is required.Furthermore, in the semiconductor industry, patterns are becoming finer as weight reduction and capacity increases, and there is an increasing demand for faithful and clear transfer of patterns. has been done. However, with conventional developing solutions, the pattern after development is poor and scum is generated, making it difficult to meet such demands. In order to prevent the occurrence of such a state, efforts have been made to increase the developing temperature, use a strong developer, or lengthen the developing time.
However, when developing under such severe conditions, the pattern often collapses. An object of the present invention is to provide an image sharpness enhancer that enables faithful and clear transfer under normal development conditions. The present inventor has discovered that the object of the present invention can be achieved by adding a small amount of a specific compound to a developer commonly used as a dissolution rate differential developer. That is, the present invention relates to fluorine-containing carboxylic acids, ammonium salts thereof, or primary to 3 carbon atoms having 1 to 6 carbon atoms.
The present invention relates to an image sharpness enhancer for a differential solubility developer containing a class amine salt as an active ingredient. According to the present invention, particularly when obtaining a fine pattern, the pattern is excellent in sharpness, little or no scum occurs, and it is possible to perform faithful and clear transfer. Furthermore, when the remaining coating is removed from the substrate with a solvent after transfer, it has the excellent effect of not leaving traces of the coating. Examples of the fluorine-containing carboxylic acid used in the present invention include various compounds that are hydrocarbons having a COOH group or derivatives thereof, in which a portion of the hydrogen atoms are substituted with fluorine atoms. Preferred specific examples include the formula : X ( CF 2 ) lCOOH CF 2 CF 2 O [CF (CF 3 ) CF 2 O] nCF (CF 3 )
COOH (X is hydrogen, fluorine, CF 3 CHF, (CF 3 ) 2 CH or (CF 3 ) 2 CF, R 1 and R 2 are hydrogen or carbon number 1 to
6 alkyl group, l is 1 to 10, m is 0 to 10, provided that when X is hydrogen, m is 1 to 10, n is 0 to 3, and a part of fluorine in the formula or other than COOH group A part of the hydrogen may be substituted with a halogen other than fluorine. ) can be exemplified. In addition, examples of halogens other than fluorine include chlorine and bromine. In the present invention, in addition to the above-mentioned fluorine-containing carboxylic acid, ammonium salts thereof or primary carboxylic acids having 1 to 6 carbon atoms are used.
Grade to tertiary amine salts can also be used. Examples of amines include methylamine, ethylamine, butylamine, hexylamine, dimethylamine, diisopropylamine, trimethylamine, triethylamine, and the like. In the present invention, a fluorine-containing carboxylic acid or an ammonium salt thereof or a primary to
If the amount of tertiary amine salt added is too large, it may reduce the sensitivity of the photosensitive compound film, cause the fine pattern to rise above the substrate, or cause the film to peel off, so it is necessary to keep it in a small amount. The amount added is usually about 0.001 to 4% (by weight, hereinafter the same) in the developer, preferably about 0.005 to 2%. The image sharpness enhancer of the present invention can be added to a conventionally known solution rate differential developer. Such conventional developers are comprised of various known solvents. Examples of such solvents include aqueous solutions such as alkalis;
Hydrocarbons such as cyclohexane, heptane, and toluene, halogenated hydrocarbons such as chloroform and methylene chloride, ketones such as methyl ethyl ketone and methyl isobutyl ketone, alcohols such as ethanol and isopropanol, esters such as ethyl acetate and isoamyl acetate, and ethers such as tetrahydrofuran. , and various other solvents such as dimethylformamide. These solvents can be used as a developer, either alone or as a mixture, and are appropriately selected depending on the molecular weight of the photosensitive compound, desired sensitivity, etc., and the developing temperature and time are also appropriately selected depending on the type of developer and the molecular weight of the polymer. determined. Development with the developing composition containing the image sharpness enhancer of the present invention is as follows:
The development may be carried out under the development conditions of a conventionally known dissolution rate differential developer depending on the photosensitive compound described above, or under conditions in the vicinity thereof. After development, rinse, dry,
In some cases, a desired pattern is formed by firing. Next, the present invention will be explained in more detail with reference to Examples and Comparative Examples, but the present invention is not limited only to these Examples. Example 1 Poly-2,2,3,4,4,4- with a molecular weight of 800,000
Hexafluorobutyl methacrylate (PFBM)
An 8% methyl isobutyl ketone (MIBK) solution was used as a resist solution, and this was spin-coated onto a silicon wafer to a film thickness of 0.45 μm. Then 30 at 140℃
Prebaking was performed for a minute to evaporate the solvent and obtain a resist film. Next, an accelerating voltage was applied to the resist film using an ERE-302 electron beam lithography system (manufactured by Elionix Co., Ltd.).
An electron beam of 20 KV and a current density of 1×10 −9 A/cm 2 was irradiated with various irradiation times to draw lines and spaces of 32 μ. This sample was
(CF 2 CF 2 ) 3 MIBK with 0.2% by weight of COOH added:
Develop by immersing it in a developer solution with IPA (isopropanol) at 1:150 (volume ratio) for 120 seconds, then immediately transfer it to IPA.
Dip and wash for 60 seconds. The sensitivity of the resist film was 4×10 −7 C/cm 2 and the γ value was 4.5. For comparison, a pattern (Comparative Example 1) was obtained in the same manner as in Example 1 except that H(CF 2 CF 2 ) 3 COOH was not added. Examples 2 to 5 Resist patterns were obtained in the same manner as in Example 1 except that the fluorine-containing carboxylic acids listed in Table 1 were used. The characteristics of the obtained resist pattern are also shown in Table 1. All of the patterns obtained had a clearer cross section than when using a developer to which no fluorine-containing carboxylic acid was added, and almost no scum was observed. Reference Example 1 A resist pattern was obtained in the same manner as in Example 2 except that fluorine-containing alcohol (HCF 2 CF 2 CH 2 OH) was used instead of fluorine-containing carboxylic acid, and its characteristics are also shown in Table 1. show. Table 1 shows the results of examining the sharpness and adhesion of the resist patterns obtained in Examples 1 to 5, Comparative Example 1, and Reference Example 1. In the table, ○ means good and ◎ means excellent.
【表】【table】
【表】
実施例 6〜7
市販のフオトレジスト用ポリメチルメタクリレ
ートの10%メチルセロソルブ溶液をレジスト溶液
として、実施例1と同様に塗装した。次いで170
℃で30分間プリベークして溶剤を蒸発させレジス
ト被膜を得た。
次に実施例1と同様にして加速電圧20KV、電
流密度1×10-8A/cm2の電子線を照射時間を種々
変化させて照射し、32μのラインアンドスペース
を描画した。この試料をMIBK:IPAが1:1
(容量比)の現像液にそれぞれ添加剤を加えたも
のに120秒間浸漬して現像し、直ちにIPAに60秒
間浸漬して洗浄してレジストパターンを得た。得
られたレジストパターンの特性を第2表に示す。[Table] Examples 6 to 7 Coating was carried out in the same manner as in Example 1 using a 10% methyl cellosolve solution of polymethyl methacrylate for photoresists as a resist solution. then 170
Prebaking was performed at ℃ for 30 minutes to evaporate the solvent and obtain a resist film. Next, in the same manner as in Example 1, an electron beam with an acceleration voltage of 20 KV and a current density of 1×10 -8 A/cm 2 was irradiated with various irradiation times to draw lines and spaces of 32 μm. This sample was mixed with MIBK:IPA in a ratio of 1:1.
The resist pattern was developed by immersing it in a developer solution (volume ratio) for 120 seconds to which additives had been added, and then immediately immersing it in IPA for 60 seconds for cleaning to obtain a resist pattern. Table 2 shows the characteristics of the resist pattern obtained.
Claims (1)
塩もしくは炭素数1〜6の第1級〜3級アミン塩
を有効成分とする溶解速度現像液の像鮮明性増大
剤。 2 含フツ素カルボン酸が式 X(CF2)lCOOH X(CF2)mC(R1)(R2)(CH2)nCOOH CF3CF2O(CF2CF2O)nCF2COOH又は CF3CF2CF2O〔CF(CF3)CF2O〕nCF(CF3)
COOH (Xは水素、フツ素、CF3CHF、(CF3)2CH又
は(CF3)2CF、R1及びR2は水素又は炭素数1〜
6のアルキル基、lは1〜10、mは0〜10、ただ
しXが水素のとき、mは1〜10、nは0〜3を示
し、式中のフツ素の1部又はCOOH基以外の水
素の1部はフツ素以外のハロゲンにより置換され
ていてもよい。) で表わされる化合物である請求の範囲第1項に記
載の像鮮明性増大剤。[Scope of Claims] 1. An image sharpness enhancer for a dissolution rate developer containing a fluorine-containing carboxylic acid, an ammonium salt thereof, or a primary to tertiary amine salt having 1 to 6 carbon atoms as an active ingredient. 2 Fluorine - containing carboxylic acid has the formula : 3 CF 2 CF 2 O [CF (CF 3 ) CF 2 O] nCF (CF 3 )
COOH (X is hydrogen, fluorine, CF 3 CHF, (CF 3 ) 2 CH or (CF 3 ) 2 CF, R 1 and R 2 are hydrogen or carbon number 1 to
6 alkyl group, l is 1 to 10, m is 0 to 10, provided that when X is hydrogen, m is 1 to 10, n is 0 to 3, and a part of fluorine in the formula or other than COOH group A part of the hydrogen may be substituted with a halogen other than fluorine. ) The image sharpness enhancer according to claim 1, which is a compound represented by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1591383A JPS59142547A (en) | 1983-02-02 | 1983-02-02 | Agent for raising image sharpness added into developing solution dependent on dissolution speed difference and developing composition containing it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1591383A JPS59142547A (en) | 1983-02-02 | 1983-02-02 | Agent for raising image sharpness added into developing solution dependent on dissolution speed difference and developing composition containing it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59142547A JPS59142547A (en) | 1984-08-15 |
| JPH0332783B2 true JPH0332783B2 (en) | 1991-05-14 |
Family
ID=11902015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1591383A Granted JPS59142547A (en) | 1983-02-02 | 1983-02-02 | Agent for raising image sharpness added into developing solution dependent on dissolution speed difference and developing composition containing it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59142547A (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6211852A (en) * | 1985-07-10 | 1987-01-20 | Nippon Telegr & Teleph Corp <Ntt> | Formation of pattern |
| JPH0685070B2 (en) * | 1985-02-04 | 1994-10-26 | 三菱電機株式会社 | Method of developing resist pattern |
| KR100573560B1 (en) | 1997-10-30 | 2006-08-30 | 가오가부시끼가이샤 | Resist developer |
| TWI221946B (en) | 1999-01-07 | 2004-10-11 | Kao Corp | Resist developer |
| JP5837812B2 (en) * | 2010-12-27 | 2015-12-24 | Hoya株式会社 | Resist developer, resist pattern forming method, and mold manufacturing method |
| JP5837811B2 (en) * | 2010-12-27 | 2015-12-24 | Hoya株式会社 | Resist developer, resist pattern forming method, and mold manufacturing method |
| JP6027779B2 (en) * | 2012-06-11 | 2016-11-16 | メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 | Lithographic development or rinsing solution and pattern forming method using the same |
| JP2014219487A (en) * | 2013-05-02 | 2014-11-20 | 富士フイルム株式会社 | Pattern formation method, electronic device and method of manufacturing the same, developer |
| KR102863608B1 (en) * | 2022-07-05 | 2025-09-22 | 삼성에스디아이 주식회사 | Metal containing photoresist developer composition, and method of forming patterns incouding step of developing using the composition |
| US20240393684A1 (en) * | 2023-05-23 | 2024-11-28 | Samsung Sdi Co., Ltd. | Method of forming patterns |
| KR20250020976A (en) * | 2023-08-04 | 2025-02-11 | 삼성에스디아이 주식회사 | Composition for removing edge bead from metal containing resists, developer composition of metal containing resists, and method of forming patterns using the composition |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5460002A (en) * | 1977-10-19 | 1979-05-15 | Fuji Photo Film Co Ltd | Developer for photosensitive lithographi printing plate |
| JPS54135004A (en) * | 1978-04-10 | 1979-10-19 | Fuji Photo Film Co Ltd | Photosensitive flat printing plate |
| JPS5552054A (en) * | 1978-10-11 | 1980-04-16 | Konishiroku Photo Ind Co Ltd | Developing solution composition |
| JPS55100548A (en) * | 1979-01-26 | 1980-07-31 | Japan Synthetic Rubber Co Ltd | Developer |
| DE3140186A1 (en) * | 1981-10-09 | 1983-04-28 | Hoechst Ag, 6230 Frankfurt | DEVELOPER AND METHOD FOR DEVELOPING EXPOSED NEGATIVE WORKING REPRODUCTION LAYERS |
| JPS58137836A (en) * | 1982-02-10 | 1983-08-16 | Toshiba Corp | Processing agent for rubber resist |
-
1983
- 1983-02-02 JP JP1591383A patent/JPS59142547A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59142547A (en) | 1984-08-15 |
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