JPS58105143A - Positive type photoresist composition - Google Patents

Positive type photoresist composition

Info

Publication number
JPS58105143A
JPS58105143A JP20245581A JP20245581A JPS58105143A JP S58105143 A JPS58105143 A JP S58105143A JP 20245581 A JP20245581 A JP 20245581A JP 20245581 A JP20245581 A JP 20245581A JP S58105143 A JPS58105143 A JP S58105143A
Authority
JP
Japan
Prior art keywords
photoresist composition
positive type
solvent
striations
type photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20245581A
Other languages
Japanese (ja)
Inventor
Norio Ishikawa
典夫 石川
Hayato Katsuragi
桂木　速人
Tomoaki Yamashita
山下　朝朗
Yoichi Hirai
洋一 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Chemical Co Inc
Original Assignee
Kanto Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Chemical Co Inc filed Critical Kanto Chemical Co Inc
Priority to JP20245581A priority Critical patent/JPS58105143A/en
Publication of JPS58105143A publication Critical patent/JPS58105143A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

PURPOSE:To obtain a photoresist causing a few striations, by using an o- quinonediazide type photosensitive agnet, a specified solvent as a main solvent, and further, fluorine type surfactant as an additive. CONSTITUTION:A positive type photoresist composition comprises an o-quinone diazide type photosensitive agent, an alkali-soluble phenol resin, at least one selected from a group of cyclohexanone, methyl cellosolve, ethyl cellosolve, and N,N-dimethylformamide as a main solvent, and in addition, 0.01-1.0wt% fluorine type surfactant based on the solid.

Description

【発明の詳細な説明】 物に関するものである。さらに詳しく言えば、本発明は
、０−キノンジアジド系感元剤とアルカリ可溶性フェノ
ール樹脂とを、シクロヘキサノン、メチルセロソルブ、
エチルセロソルブおよびＮ，Ｎ−ジメチルホルムアミド
がら選はれた少くとも１つを溶剤として用い、さらにフ
ッ素系界面活性剤を配合してなることを特徴とする新規
な０−キノンジアジＦ糸ボジ型フォトレンスト組成物を
提供するものである。DETAILED DESCRIPTION OF THE INVENTION This invention relates to objects. More specifically, the present invention combines an 0-quinonediazide-based sensitizing agent and an alkali-soluble phenol resin with cyclohexanone, methyl cellosolve,
A novel 0-quinonediazide F thread-bodied photoresist characterized by using at least one selected from ethyl cellosolve and N,N-dimethylformamide as a solvent and further containing a fluorine surfactant. A composition is provided.

ボン型フォトレジヌトはネガ型フォトレンヌトに比べ畠
解像度である為ＩＣ，Ｔ．ＳＩ等の微細加工を必賛とす
る部分のフオトエソチングプロセスの耐エツチング皮膜
として使用されており、さらに今後の超ＬＳＩ製造工程
におけるフォトエツチング用レジストとして期待されて
いる。Since the Bonn type photoresinut has a lower resolution than the negative type photoresinut, it is suitable for IC, T. It is used as an etching-resistant film in the photoetching process for parts such as SI that require microfabrication, and is also expected to be used as a photoetching resist in the future VLSI manufacturing process.

“　しかしながら、従来のポ゛ジ型フォトレジストは、
スピンナーによる塗膜形成時に塗膜表面に放射線状の縞
が発生するという問題点があった。“However, conventional positive photoresists
There was a problem in that radial stripes were generated on the surface of the coating film when the coating film was formed using a spinner.

この塗膜表面の放射線状の縞はストリエーショ／と呼ば
れているが、このストリエーションを顕微鏡およびタリ
ステップ等で鈎べると、レジスト膜表面は小さな塗布ム
ラとなっており、レジスト膜厚にして４００〜６００λ
の差が生じていることがわかる。These radial stripes on the surface of the coating film are called striations, but when these striations are examined using a microscope or Talystep, the surface of the resist film has small coating unevenness, and the thickness of the resist film varies. 400~600λ
It can be seen that there is a difference.

また、このストリエーションは現＋ｓ後，いっそう大き
くなり、そのためボ′ジ型フォトレジストのパターンの
直線性およびパターンの再現性は悪くなる。In addition, the striations become even larger after +s, and as a result, the linearity and reproducibility of the pattern of the body type photoresist deteriorate.

本発明者らは、ストリエーションの発生の極めて少ない
ポジ型フォトレジストヲ提供することを目的として研死
を重ねた結果、特定の溶剤とフッ素系界面活性剤との組
合せ使用によりストリエーションが改善される事実を見
い出した。The inventors of the present invention have made repeated efforts to provide a positive photoresist with extremely low striations, and have found that striations can be improved by using a combination of a specific solvent and a fluorine-based surfactant. I discovered the fact that

本発明はかかる知見に基づくものである。The present invention is based on this knowledge.

ボン型フォトレンスト組成物の溶剤としては通常、酢酸
セロソルブ、６酸−ｎ−ブチル、メチルセロソルブ、エ
チルセロソルブ、ジオキサン、Ｎ、Ｎ−ンメチルホルム
アミド、キシレン、メチルエチルケトン、テトラヒドロ
フランなどが混合使用されているか、本発明の組成物に
用いられる溶剤は、／クロヘキサノン、メチルセロソル
ブ、エチルセロソルブ、Ｎ、Ｎ　−）メチルホルムアミ
ドの中から選ばれる少なくとも１つ剤の例としては、Ｆ
ｃ−４３０、Ｆｃ−４３１（フロロケミカル−庄友スリ
ーエム製）などがあり、これら界面活性剤の使用量は広
範囲にわたって使用可能であるが、過剰に使用するとか
えってレジスト表１ｆＩｉ全不均一にするので、固型分
に灯して００１〜１．０ｗｔ％程度の量で加えるのが望
ましい。As a solvent for the Bon-type Photorenst composition, a mixture of cellosolve acetate, n-butyl hexate, methyl cellosolve, ethyl cellosolve, dioxane, N,N-methylformamide, xylene, methyl ethyl ketone, tetrahydrofuran, etc. is usually used. , the solvent used in the composition of the present invention is at least one agent selected from /clohexanone, methyl cellosolve, ethyl cellosolve, N,N-)methylformamide, F.
C-430, Fc-431 (Fluorochemical - manufactured by Shotomo 3M), etc. These surfactants can be used in a wide range of amounts, but if used in excess, they may actually make the resist surface 1fIi completely non-uniform. It is desirable to add it in an amount of about 0.001 to 1.0 wt% based on the solid content.

これらフッ素系界面活性剤の添加により、ボン型フォト
レジストの特性および基板との密着性は何ら変化しない
事実が見出された。It has been found that the addition of these fluorine-based surfactants does not change the properties of the BON photoresist or the adhesion to the substrate.

次に、実施例をあげて本発明の詳細な説明するが本発明
はこれのみに限定されるものではない。Next, the present invention will be described in detail with reference to Examples, but the present invention is not limited thereto.

実施例　１ ０−ナフトキノンジアジドスルホニルクロライドとｍ−
クレゾールホルムアルデヒドノボラック樹脂との縮合物
１０２、ｍ−クレゾールホルムアルデヒドノボラック樹
脂３０ｆＩ′ｆｒ：メチルセロソルブ６０２に溶解し、
さらにＨｃ−４３０（フロロケミカル−住友スリーエム
Ｖ）ｋｏ２ｒ（固型分に対して０．５ｗｔ％）添加した
感光液を調製し、５ｉｏ２／ｓｉウエハー上にスピンナ
ーにより塗膜を形成した。塗膜形成後ホットプレート上
で８５０．１０分間プレベークして、レジスト膜表面を
調べたところ、放射線状の縞すなわちストリエーション
は見られなかった。Example 1 0-naphthoquinonediazide sulfonyl chloride and m-
Condensate with cresol formaldehyde novolac resin 102, m-cresol formaldehyde novolac resin 30fI'fr: dissolved in methyl cellosolve 602,
Further, a photosensitive solution containing Hc-430 (Fluorochemical - Sumitomo 3M V) ko2r (0.5 wt% based on solid content) was prepared, and a coating film was formed on a 5io2/si wafer using a spinner. After the coating film was formed, it was prebaked on a hot plate for 850.10 minutes, and when the surface of the resist film was examined, no radial stripes, that is, striations were observed.

さらに露光、現像後のレジスト膜表面のストリエーショ
ンも見られなかった。Furthermore, no striations were observed on the surface of the resist film after exposure and development.

実施ＩＰｉｌ　　２ ０−ナフトキノンジアジドスルホニルクロライドとｍ−
クレゾールホルムアルデヒドノボラック樹脂との縮合物
１０９．ｍ−クレゾールホルムアルデヒドノボラック樹
脂３０ｆ’ｔメチルセロツルー１ｂｏｙに溶解し、さら
にＦｃ−４３０（フロロケミカル−住友スリーエム製）
　ｔ−０，０２ｆ（固型分に対してｏ０５　ｗｔチ）添
加した感光液をｗ４裂し、実施例１と同様の操作を行な
いストリエーションを−ベた結果、現像前後ともにスト
リエーションは見られなかった。Implementation IPil 2 0-naphthoquinonediazide sulfonyl chloride and m-
Condensate with cresol formaldehyde novolak resin 109. Dissolved in m-cresol formaldehyde novolac resin 30ft't Methyl Cellotrue 1boy, and further Fc-430 (Fluorochemical - manufactured by Sumitomo 3M)
The photosensitive solution to which t-0,02f (o05 wtch relative to the solid content) was added was divided into W4 parts, and the same operation as in Example 1 was performed to remove striations. As a result, no striations were observed before and after development. There wasn't.

実施例　３ ５．５′−メチレン−ヒス−サリチルアルデヒドとｏ−
フェニレンジアミンのｌ縮合物と。−ナ　５− フトキノンシアジドスルホニルクロライドとの縮合物５
２、ｍ−クレゾールホルムアルデヒドノボラック樹脂１
０　ｆ　’ｉ　］）ＭＦ　２５　ｆ　、エチルセロソル
ブ２５２、キシレン５ｆの混合溶剤に溶解し、さらＶＣ
Ｆｃ−４３０ｋ　０．０１５　？　（固型分に対して０
．１　ｗｔ％）添加した感″Ｊｔ、液を調製し、実施例
１と同様の操作後ス）　ＩＪエニーョンを調べた結果、
ストリエーションは、はとんど見られなかった。Example 3 5.5'-methylene-his-salicylaldehyde and o-
1 condensate of phenylenediamine. -Na 5- Condensate with phthoquinone cyazide sulfonyl chloride 5
2, m-cresol formaldehyde novolak resin 1
0 f 'i ]) MF 25 f , ethyl cellosolve 252, and xylene 5f dissolved in a mixed solvent and further VC
Fc-430k 0.015? (0 for solid content
．． 1 wt%) was added, a liquid was prepared and the same procedure as in Example 1 was conducted.
Streations were rarely seen.

実施例　４ ５．５′−メチレン−ビス−サリチルアルデヒドとＯ−
フェニレンジアミンの重縮合物と０−ナフトキノンジア
ジドスルホニルクロライドとの縮合物５１．ｍ−クレゾ
ールホルムアルデヒドノボラック樹脂１０りｉＤＭＦ２
！Ｍ、エチルセロソルブ２５ｔ、キシレン５ｆの混合溶
剤に溶解し、さらにＦｃ−４３１ｋ　０．０７５ｆ　（
固型分に対して０．５　ｗｔ％）添加した感光液を＃ｌ
製し、実施例１と同様の操作後ス）　ＩＪエーションヲ
調べた結果、ストリエーションは、はとんど見られなか
　６− つた。Example 4 5.5'-methylene-bis-salicylaldehyde and O-
Condensate of polycondensate of phenylenediamine and 0-naphthoquinonediazide sulfonyl chloride 51. m-cresol formaldehyde novolac resin 10 liDMF2
! M, ethyl cellosolve 25t, xylene 5f mixed solvent, and further Fc-431k 0.075f (
0.5 wt% based on the solid content) was added to #l
As a result of examining the IJ formation after the same operation as in Example 1, no striations were observed.

本発明の組成物により得られるレジスト膜表面を、タリ
ステップ（テーラーホブンン社製）で走査した結果、比
較対照品（市販品）を用いて得られるボ、；型フォトレ
ジスト膜の場合と比べ、市販品の場合がス）　ＩＪエニ
ーョンが著シく見られるのに対し、本発明の組成物によ
って得られるレジスト膜表面には、ストリニルジョンが
見られないことが確認された。As a result of scanning the surface of the resist film obtained using the composition of the present invention with a Talystep (manufactured by Taylor Hoven), it was found that the surface of the resist film obtained using the comparative product (commercially available) was significantly different from that of the commercially available photoresist film. It was confirmed that, while IJ anyon was significantly observed, no strinyl John was observed on the surface of the resist film obtained using the composition of the present invention.

特許出願人　関東化学株式会社 代理人　弁理土用　孝夫 　７−Patent applicant: Kanto Kagaku Co., Ltd. Agent: Takao Doyo, Patent Attorney 7-

Claims (1)

【特許請求の範囲】[Claims] ０−キノンジアンド系感光剤とアルカリ可溶性フェノー
ル樹脂とを、シクロヘキサノン、メチルセロソルブ、エ
チルセロソルブおよ０：Ｎ、Ｎ−ジメチルホルムアミド
から選ばれた少くとも１つを溶剤の主成分として用い、
さらにフッ素系界面活性剤を配合してなること全特徴と
する０−キノンジアジＦ糸ポジ型フォトレジスト利成物
。A 0-quinone diand-based photosensitizer and an alkali-soluble phenol resin are used as the main component of a solvent, at least one selected from cyclohexanone, methyl cellosolve, ethyl cellosolve, and 0:N,N-dimethylformamide,
A 0-quinonediazide F thread positive type photoresist composition further comprising a fluorine surfactant.
JP20245581A 1981-12-17 1981-12-17 Positive type photoresist composition Pending JPS58105143A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20245581A JPS58105143A (en) 1981-12-17 1981-12-17 Positive type photoresist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20245581A JPS58105143A (en) 1981-12-17 1981-12-17 Positive type photoresist composition

Publications (1)

Publication Number Publication Date
JPS58105143A true JPS58105143A (en) 1983-06-22

Family

ID=16457806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20245581A Pending JPS58105143A (en) 1981-12-17 1981-12-17 Positive type photoresist composition

Country Status (1)

Country Link
JP (1) JPS58105143A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155836A (en) * 1983-02-24 1984-09-05 Tokyo Ohka Kogyo Co Ltd Photosensitive composition
JPS6057339A (en) * 1983-09-08 1985-04-03 Sumitomo Chem Co Ltd Positive type photoresist composition
JPS6074621A (en) * 1983-09-30 1985-04-26 Fujitsu Ltd Manufacture of semiconductor device
JPS60125841A (en) * 1983-12-12 1985-07-05 Mitsubishi Chem Ind Ltd Positive type photoresist composition
JPS60208749A (en) * 1984-04-02 1985-10-21 Japan Synthetic Rubber Co Ltd Photoresist composition
JPS61226746A (en) * 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd Radiation sensitive composition
JPS61226745A (en) * 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd Radiation sensitive composition
JPS61228440A (en) * 1985-04-02 1986-10-11 Mitsubishi Chem Ind Ltd Positive type photoresist composition
JPS6236657A (en) * 1985-08-10 1987-02-17 Japan Synthetic Rubber Co Ltd Resist composition
JPS62226143A (en) * 1986-03-27 1987-10-05 Fuji Photo Film Co Ltd Photosensitive composition
JPS63501744A (en) * 1985-11-27 1988-07-14 ヘキスト　セラニーズ　コーポレーション Method of thermally stabilizing photoresist image layers on substrates
JPS6448849A (en) * 1987-08-17 1989-02-23 Konishiroku Photo Ind Photosensitive composition
JPH01293340A (en) * 1988-05-20 1989-11-27 Japan Synthetic Rubber Co Ltd Radiation sensitive resin composition
JPH03502224A (en) * 1988-01-07 1991-05-23 ローベルト・ボッシュ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング Control device of an internal combustion engine and method of adjusting its parameters
KR100573243B1 (en) * 1998-12-17 2006-04-24 도오꾜오까고오교 가부시끼가이샤 Positive-type photoresist coating liquid for producing liquid-crystal device and substrates using the same

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155836A (en) * 1983-02-24 1984-09-05 Tokyo Ohka Kogyo Co Ltd Photosensitive composition
JPH0449703B2 (en) * 1983-02-24 1992-08-12 Tokyo Ohka Kogyo Co Ltd
JPH04261B2 (en) * 1983-09-08 1992-01-06 Sumitomo Chemical Co
JPS6057339A (en) * 1983-09-08 1985-04-03 Sumitomo Chem Co Ltd Positive type photoresist composition
JPS6074621A (en) * 1983-09-30 1985-04-26 Fujitsu Ltd Manufacture of semiconductor device
JPS60125841A (en) * 1983-12-12 1985-07-05 Mitsubishi Chem Ind Ltd Positive type photoresist composition
JPS60208749A (en) * 1984-04-02 1985-10-21 Japan Synthetic Rubber Co Ltd Photoresist composition
JPS61226746A (en) * 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd Radiation sensitive composition
JPS61226745A (en) * 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd Radiation sensitive composition
JPH0558188B2 (en) * 1985-03-30 1993-08-25 Japan Synthetic Rubber Co Ltd
JPH0558189B2 (en) * 1985-03-30 1993-08-25 Japan Synthetic Rubber Co Ltd
JPS61228440A (en) * 1985-04-02 1986-10-11 Mitsubishi Chem Ind Ltd Positive type photoresist composition
JPS6236657A (en) * 1985-08-10 1987-02-17 Japan Synthetic Rubber Co Ltd Resist composition
JPS63501744A (en) * 1985-11-27 1988-07-14 ヘキスト　セラニーズ　コーポレーション Method of thermally stabilizing photoresist image layers on substrates
JPH0571944B2 (en) * 1985-11-27 1993-10-08 Thiokol Morton Inc
JPS62226143A (en) * 1986-03-27 1987-10-05 Fuji Photo Film Co Ltd Photosensitive composition
JPS6448849A (en) * 1987-08-17 1989-02-23 Konishiroku Photo Ind Photosensitive composition
JPH03502224A (en) * 1988-01-07 1991-05-23 ローベルト・ボッシュ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング Control device of an internal combustion engine and method of adjusting its parameters
JPH01293340A (en) * 1988-05-20 1989-11-27 Japan Synthetic Rubber Co Ltd Radiation sensitive resin composition
KR100573243B1 (en) * 1998-12-17 2006-04-24 도오꾜오까고오교 가부시끼가이샤 Positive-type photoresist coating liquid for producing liquid-crystal device and substrates using the same

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