JPH0332782B2 - - Google Patents
Info
- Publication number
- JPH0332782B2 JPH0332782B2 JP57089219A JP8921982A JPH0332782B2 JP H0332782 B2 JPH0332782 B2 JP H0332782B2 JP 57089219 A JP57089219 A JP 57089219A JP 8921982 A JP8921982 A JP 8921982A JP H0332782 B2 JPH0332782 B2 JP H0332782B2
- Authority
- JP
- Japan
- Prior art keywords
- fluorine
- developer
- hydrogen
- pattern
- containing alcohol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 16
- 229910052731 fluorine Inorganic materials 0.000 claims description 16
- 239000011737 fluorine Substances 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 9
- 238000004090 dissolution Methods 0.000 claims description 7
- 239000003623 enhancer Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 150000002431 hydrogen Chemical group 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004480 active ingredient Substances 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 6
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 5
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- -1 azide compound Chemical class 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- LCPUCXXYIYXLJY-UHFFFAOYSA-N 1,1,2,4,4,4-hexafluorobutyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(F)(F)C(F)CC(F)(F)F LCPUCXXYIYXLJY-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229940114081 cinnamate Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Description
【発明の詳細な説明】
本発明は溶解速度差現像液の像鮮明性増大剤に
関する。
現在、可視光線、紫外線、遠紫外線、Ｘ線、電
子線などのエネルギー線に感ずる化合物は多くの
分野に利用されており、印刷、塗料、フオトレジ
ストなどの工業的に広く実用化され、特に印刷工
業、半導体工業などにおけるパターン形成材料と
して重要な役割を果している。
一般にこれらパターン形成材料としては例えば
ポリ桂皮酸ビニル、アジド化合物を含むノボラツ
ク樹脂、天然ゴム、環化ポリイソプレン、ポリア
クリル酸エステル、ポリビニルアルコール、シラ
ン化合物、カルコゲナイトガラスなどが検討され
ている。これらの化合物は水溶液又は有機溶液と
して使用され、目的の基板上に塗布、乾燥され、
溶媒を蒸発させて、その被膜を得、次いで被膜上
にエネルギー線を照射してパターンを描画し、更
に現像することにより基板の被膜上にパターンを
形成させる。
現像液としては感光性化合物の被膜においてエ
ネルギー線の照射された部分と照射されていない
部分における溶解速度の差を利用して、溶解速度
の差の著しく異なる溶剤が用いられ、一般的には
それぞれの感光性化合物に適した現像液が用いら
れている。しかしながら最近の印刷工業において
は一層の鮮明さが要求され、更に半導体工業にお
いても軽量化、大容量化に伴なつてパターンの微
細化が進み、そのパターンを忠実に鮮明に転写す
ることが増々要求されている。しかるに従来の現
像液では現像後のパターンのキレが悪く、更には
スカムの発生を生じ、斯かる要望には応え難くな
つてきた。斯かる状態の発生を防ぐために現像温
度を高くしたり、強現像液を使用したり、あるい
は現像時間を長くするなどの工夫もされている。
しかしこのような厳しい条件で現像を行うとパタ
ーンがしばしば崩れてしまう欠点がある。
本発明の目的は通常の現像条件で忠実、鮮明な
転写が可能な像鮮明性増大剤を提供することにあ
る。
本発明者は溶解速度差現像液として通常用いら
れている現像液に少量の含フツ素アルコールを添
加することにより本発明の目的が達成されること
を見い出した。
即ち本発明は含フツ素アルコールを有効成分と
する溶解速度差現像液の像鮮明性増大剤に係る。
本発明によれば特に微細パターンを得るに際し
てパターンのキレに優れ、スカムの発生が殆どな
いか又は全く生ぜず、忠実且つ鮮明な転写を行う
ことが可能である。更に残つた被膜を転写後に基
板から溶媒で除去するとき被膜の痕跡を残さない
という優れた効果をも伴う。
本発明で使用される含フツ素アルコールとして
は水酸基を有する炭化水素又はその誘導体であつ
て、その水素の１部がフツ素原子により置換され
た各種の化合物を挙げることができる。好適な具
体例としては式
Ｘ（CF2）lC（R1）（R2）（CH2）mOH、
（CF3）3COH、
CF3CF2O（CF2CF2O）nCF2CH2OH又は
CF3CF2CF2O〔CF（CF3）CF2O〕nCF（CF3）
CH2OH
（Ｘは水素、フツ素、CF3CHF、（CF3）2CH又
は（CF3）2CF、R1及びR2は水素又は炭素数１〜
６のアルキル基、ｌは０〜10、ただしＸが水素の
とき、ｌは１〜10、ｍは０〜４、ｎは０〜３の整
数を示し、式中のフツ素の１部又はOH基以外の
水素の１部はフツ素以外のハロゲンにより置換さ
れていてもよい。）で表わされる化合物を例示で
きる。尚、フツ素以外のハロゲンとして塩素、臭
素を例示できる。含フツ素アルコールの添加量は
多いと感光性化合物被膜の感度度を低下させた
り、微細パターンを基板より浮き上がらせたり、
被膜を剥離させてしまうことがあるため少量とす
る必要がある。通常添加量は現像液中約0.001〜
４％（重量％、以下同様）とするのが良く、約
0.005〜２％が好ましい。
本発明の像鮮明性増大剤は従来公知の溶解速度
差現像液に添加することができる。斯かる従来の
現像液は公知の各種の溶媒からなるものである。
斯かる溶媒の例としては、アルカリなどの水溶
液、シクロヘキサン、ヘプタン、トルエン等の炭
化水素、クロロホルム、塩化メチレン等のハロゲ
ン化炭化水素、メチルエチルケトン、メチルイソ
ブチルケトン等のケトン、エタノール、イソプロ
パノール等のアルコール、酢酸エチル、酢酸イソ
アミル等のエステル、テトラヒドロフラン等のエ
ーテル、その他ジメチルホルムアミド等の種々の
溶媒が例示できる。これらの溶媒は現像液とし
て、それぞれ単独又は混合されて、感光性化合物
の分子量、所望の感度などによつて適宜選択さ
れ、また、現像温度および時間も現像液の種類や
重合体の分子量により適宜定められる。本発明の
像鮮明性増大剤を添加した現像用組成物による現
像は、前記の感光性化合物に応じる従来公知の溶
解速度差現像液の現像条件でまたはその附近の条
件で適宜行なえばよい。現像後はリンスを行い、
乾燥、場合によつては焼成することにより所望の
パターンが形成される。
つぎに実施例および比較例をあげて本発明をさ
らに詳細に説明するが、本発明はそれらの実施例
のみに限定されるものではない。
実施例 １
分子量80万のポリ−２，２，３，４，４，４−
ヘキサフルオロブチルメタクリレート（PFBM
という）の８％メチルイソブチルケトン
（MIBK）溶液をレジスト溶液として、これをシ
リコンウエハー上にスピンコーテイングして膜厚
が0.45μとなるように塗装した。次いで140℃で30
分間プリベークして溶剤を蒸発させレジスト被膜
を得た。
次にERE−302型電子線描画装置（エリオニク
ス社製）を用いて該レジスト被膜に加速電圧
20KV、電流密度１×10-9A／cm2の電子線を照射
時間を種々変化させて照射し、32μのラインアン
ドスペースを描画した。この試料を
HCF2CF2CH2OHを0.2重量％添加したMIBK：
IPA（イソプロパノール）が１：150（容量比）の
現像液に120秒間浸漬して現像し、直ちにIPAに
60秒間浸漬して洗浄した。レジスト被膜の感度は
４×10-7C／cm2、γ値は4.5であつた。
以上により得られたパターンの断面の倍率１万
倍の電子顕微鏡写真を第１図として示す。また比
較のために含フツ素アルコール
（HCF2CF2CH2OH）を添加しなかつた他は実施
例１と同様にして得たパターン（比較例１）の断
面の同様倍率１万倍の電子顕微鏡写真を第２図と
して示す。第１〜２図の写真から、含フツ素アル
コールを添加した現像液を用いて得られたパター
ンの断面のキレが優れ、スカムの少ないことが明
らかである。
また上記実施例１のパターンをエツチングした
後、MIBKでレジスト被膜を除去して、400倍顕
微鏡で観察したところ、全く被膜の痕跡を残して
いなかつた。
実施例 ２〜５
第１表に記載の感光性材料、照射及び現像条件
以外は実施例１と同様にしてレジストパターンを
得た。得られたレジストパターンの特性を同様第
１表に示す。得られたパターンはいずれも含フツ
素アルコールを添加しない現像液を用いた場合よ
り断面のキレに優れスカムの発生は殆どみられな
かつた。
【表】DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an image sharpness enhancer for differential dissolution rate developers. Currently, compounds that are sensitive to energy rays such as visible light, ultraviolet rays, far ultraviolet rays, X-rays, and electron beams are used in many fields, and are widely used in industrial applications such as printing, paints, and photoresists, especially in printing. It plays an important role as a pattern forming material in industry, semiconductor industry, etc. Generally, as these pattern forming materials, polyvinyl cinnamate, novolak resin containing an azide compound, natural rubber, cyclized polyisoprene, polyacrylic acid ester, polyvinyl alcohol, silane compound, chalcogenite glass, etc. have been considered. These compounds are used as an aqueous or organic solution, applied to the desired substrate, dried,
The solvent is evaporated to obtain a film, and the film is then irradiated with energy rays to draw a pattern, and further developed to form a pattern on the film of the substrate. As the developer, solvents with significantly different dissolution rates are used, taking advantage of the difference in dissolution rate between areas irradiated with energy rays and areas not irradiated with energy rays in the film of the photosensitive compound. A developer suitable for the photosensitive compound is used. However, in the recent printing industry, even greater clarity is required.Furthermore, in the semiconductor industry, patterns are becoming finer as weight reduction and capacity increases, and there is an increasing demand for faithful and clear transfer of patterns. has been done. However, with conventional developing solutions, the pattern after development is poor and scum is generated, making it difficult to meet such demands. In order to prevent the occurrence of such a state, efforts have been made to increase the developing temperature, use a strong developer, or lengthen the developing time.
However, when developing under such severe conditions, the pattern often collapses. An object of the present invention is to provide an image sharpness enhancer that enables faithful and clear transfer under normal development conditions. The present inventor has discovered that the object of the present invention can be achieved by adding a small amount of fluorine-containing alcohol to a developer commonly used as a dissolution rate differential developer. That is, the present invention relates to an image sharpness enhancer for a differential dissolution rate developer containing a fluorine-containing alcohol as an active ingredient. According to the present invention, particularly when obtaining a fine pattern, the pattern is excellent in sharpness, little or no scum occurs, and it is possible to perform faithful and clear transfer. Furthermore, when the remaining coating is removed from the substrate with a solvent after transfer, it has the excellent effect of not leaving traces of the coating. Examples of the fluorine-containing alcohol used in the present invention include various compounds that are hydrocarbons having a hydroxyl group or derivatives thereof, in which a portion of the hydrogen atoms are substituted with fluorine atoms. Preferred specific examples include the formula X( CF2 )lC( R1 )( R2 )( CH2 )mOH,
(CF 3 ) 3 COH, CF 3 CF 2 O (CF 2 CF 2 O) nCF 2 CH 2 OH or CF 3 CF 2 CF 2 O [CF (CF 3 ) CF 2 O] nCF (CF 3 )
CH 2 OH (X is hydrogen, fluorine, CF 3 CHF, (CF 3 ) 2 CH or (CF 3 ) 2 CF, R 1 and R 2 are hydrogen or carbon number 1 to
6 alkyl group, l is 0 to 10, provided that when X is hydrogen, l is 1 to 10, m is 0 to 4, n is an integer of 0 to 3, and part of fluorine in the formula or OH A part of the hydrogen atoms other than the group may be substituted with a halogen other than fluorine. ) can be exemplified. In addition, examples of halogens other than fluorine include chlorine and bromine. If the amount of fluorine-containing alcohol added is too large, it may reduce the sensitivity of the photosensitive compound film, make the fine pattern stand out from the substrate,
Since it may cause the coating to peel off, it is necessary to use a small amount. The amount usually added is about 0.001~ in the developer.
It is best to set it at 4% (weight%, the same applies hereafter), and approximately
0.005-2% is preferred. The image sharpness enhancer of the present invention can be added to a conventionally known solution rate differential developer. Such conventional developing solutions consist of various known solvents.
Examples of such solvents include aqueous solutions such as alkalis, hydrocarbons such as cyclohexane, heptane, and toluene, halogenated hydrocarbons such as chloroform and methylene chloride, ketones such as methyl ethyl ketone and methyl isobutyl ketone, alcohols such as ethanol and isopropanol, Examples include esters such as ethyl acetate and isoamyl acetate, ethers such as tetrahydrofuran, and various other solvents such as dimethylformamide. These solvents can be used as a developer, either alone or as a mixture, and are appropriately selected depending on the molecular weight of the photosensitive compound, desired sensitivity, etc., and the developing temperature and time are also appropriately selected depending on the type of developer and the molecular weight of the polymer. determined. Development with the developing composition containing the image clarity enhancer of the present invention may be carried out under the development conditions of a conventionally known dissolution rate differential developer depending on the above-mentioned photosensitive compound, or under conditions in the vicinity thereof. After developing, rinse.
A desired pattern is formed by drying and, in some cases, baking. Next, the present invention will be explained in more detail with reference to Examples and Comparative Examples, but the present invention is not limited only to these Examples. Example 1 Poly-2,2,3,4,4,4- with a molecular weight of 800,000
Hexafluorobutyl methacrylate (PFBM)
A resist solution containing 8% methyl isobutyl ketone (MIBK) was spin-coated onto a silicon wafer to a film thickness of 0.45 μm. Then 30 at 140℃
Prebaking was performed for a minute to evaporate the solvent and obtain a resist film. Next, an accelerating voltage was applied to the resist film using an ERE-302 electron beam lithography system (manufactured by Elionix Co., Ltd.).
An electron beam of 20 KV and a current density of 1×10 −9 A/cm 2 was irradiated with various irradiation times to draw lines and spaces of 32 μ. This sample
MIBK with 0.2 wt% addition of HCF 2 CF 2 CH 2 OH:
Develop by immersing it in a developer solution with IPA (isopropanol) at 1:150 (volume ratio) for 120 seconds, then immediately transfer it to IPA.
Dip and wash for 60 seconds. The sensitivity of the resist film was 4×10 −7 C/cm 2 and the γ value was 4.5. FIG. 1 shows an electron micrograph at a magnification of 10,000 times of the cross section of the pattern obtained above. For comparison, a cross section of a pattern obtained in the same manner as in Example 1 (Comparative Example 1), except that fluorine-containing alcohol (HCF 2 CF 2 CH 2 OH) was not added, was imaged with the same magnification of 10,000 times. A micrograph is shown in FIG. From the photographs in FIGS. 1 and 2, it is clear that the cross section of the pattern obtained using the developer containing fluorine-containing alcohol has excellent sharpness and less scum. Further, after etching the pattern of Example 1, the resist film was removed with MIBK and observed under a 400x microscope, and no trace of the film remained. Examples 2 to 5 Resist patterns were obtained in the same manner as in Example 1 except for the photosensitive material, irradiation and development conditions listed in Table 1. The characteristics of the obtained resist pattern are also shown in Table 1. All of the patterns obtained had a clearer cross-section than when a developer to which no fluorine-containing alcohol was added was used, and almost no scum was observed. 【table】
第１図及び第２図はそれぞれ実施例１及び比較
例１で得られたパターンの断面の電子顕微鏡写真
である。
FIGS. 1 and 2 are electron micrographs of cross sections of patterns obtained in Example 1 and Comparative Example 1, respectively.
Claims (1)
度差現像液の像鮮明性増大剤。 ２ 含フツ素アルコールが式 Ｘ（CF2）lC（R1）（R2）（CH2）mOH、
（CF3）3COH、 CF3CF2O（CF2CF2O）nCF2CH2OH又は CF3CF2CF2O〔CF（CF3）CF2O〕nCF（CF3）
CH2OH （Ｘは水素、フツ素、CF3CHF、（CF3）2CH又
は（CF3）2CF、R1及びR2は水素又は炭素数１〜
６のアルキル基、ｌは０〜10、ただしＸが水素の
とき、ｌは１〜10、ｍは０〜４、ｎは０〜３の整
数を示し、式中のフツ素の１部又はOH基以外の
水素の１部はフツ素以外のハロゲンにより置換さ
れていてもよい。）で表わされる化合物である請
求の範囲第１項に記載の像鮮明性増大剤。[Scope of Claims] 1. An image sharpness enhancer for a differential dissolution rate developer containing a fluorine-containing alcohol as an active ingredient. 2 Fluorine-containing alcohol has the formula X(CF 2 )lC(R 1 )(R 2 )(CH 2 )mOH,
(CF 3 ) 3 COH, CF 3 CF 2 O (CF 2 CF 2 O) nCF 2 CH 2 OH or CF 3 CF 2 CF 2 O [CF (CF 3 ) CF 2 O] nCF (CF 3 )
CH 2 OH (X is hydrogen, fluorine, CF 3 CHF, (CF 3 ) 2 CH or (CF 3 ) 2 CF, R 1 and R 2 are hydrogen or carbon number 1 to
6 alkyl group, l is 0 to 10, provided that when X is hydrogen, l is 1 to 10, m is 0 to 4, n is an integer of 0 to 3, and part of fluorine in the formula or OH A part of the hydrogen atoms other than the group may be substituted with a halogen other than fluorine. ) The image sharpness enhancer according to claim 1, which is a compound represented by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8921982A JPS58205149A (en) | 1982-05-26 | 1982-05-26 | Image sharpening agent in dissolution rate difference developing solution and developing composition containing it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8921982A JPS58205149A (en) | 1982-05-26 | 1982-05-26 | Image sharpening agent in dissolution rate difference developing solution and developing composition containing it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58205149A JPS58205149A (en) | 1983-11-30 |
| JPH0332782B2 true JPH0332782B2 (en) | 1991-05-14 |
Family
ID=13964610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8921982A Granted JPS58205149A (en) | 1982-05-26 | 1982-05-26 | Image sharpening agent in dissolution rate difference developing solution and developing composition containing it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58205149A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5442008B2 (en) * | 2009-05-21 | 2014-03-12 | 株式会社トクヤマ | Resist pattern forming method and developer |
| JP5798466B2 (en) * | 2010-12-27 | 2015-10-21 | Hoya株式会社 | Resist developer, resist pattern forming method, and mold manufacturing method |
| JP5837811B2 (en) * | 2010-12-27 | 2015-12-24 | Hoya株式会社 | Resist developer, resist pattern forming method, and mold manufacturing method |
| JP5837812B2 (en) * | 2010-12-27 | 2015-12-24 | Hoya株式会社 | Resist developer, resist pattern forming method, and mold manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54135004A (en) * | 1978-04-10 | 1979-10-19 | Fuji Photo Film Co Ltd | Photosensitive flat printing plate |
| JPS55100548A (en) * | 1979-01-26 | 1980-07-31 | Japan Synthetic Rubber Co Ltd | Developer |
-
1982
- 1982-05-26 JP JP8921982A patent/JPS58205149A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54135004A (en) * | 1978-04-10 | 1979-10-19 | Fuji Photo Film Co Ltd | Photosensitive flat printing plate |
| JPS55100548A (en) * | 1979-01-26 | 1980-07-31 | Japan Synthetic Rubber Co Ltd | Developer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58205149A (en) | 1983-11-30 |
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