JPH0330989B2 - - Google Patents
Info
- Publication number
- JPH0330989B2 JPH0330989B2 JP59243643A JP24364384A JPH0330989B2 JP H0330989 B2 JPH0330989 B2 JP H0330989B2 JP 59243643 A JP59243643 A JP 59243643A JP 24364384 A JP24364384 A JP 24364384A JP H0330989 B2 JPH0330989 B2 JP H0330989B2
- Authority
- JP
- Japan
- Prior art keywords
- metal protrusions
- substrate
- film
- tape
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 46
- 238000007747 plating Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims 1
- 230000032258 transport Effects 0.000 claims 1
- 238000012546 transfer Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920006122 polyamide resin Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/79—Apparatus for Tape Automated Bonding [TAB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Description
【発明の詳細な説明】
産業上の利用分野
本発明は基板上のの金属突起物をフイルムリー
ドに転写、接合し、かつ前記金属突起物を形成す
るボンデイング装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a bonding apparatus for transferring and bonding metal protrusions on a substrate to a film lead and forming the metal protrusions.
従来の技術
転写バンプ方式（例えば、特開昭57−152147
号）においては、基板上に形成した金属突起物を
長尺の可撓性フイルムテープに形成したフイルム
リードに位置合せし、基板上の金属突起物を前記
フイルムリード側に転写、接合する工程と、フイ
ルムリード側に接合した金属突起物を半導体素子
の電極上に加熱・加圧して、一括接合せしめる工
程が必要である。この中で従来、金属突起物を形
成する基板はガラス、セラミツク等の絶縁性の四
角形または円形状の基板上に形成し、これに所定
の寸法の金属突起物を形成しておき、前記基板を
ボンデイング装置の転写、接合する機構上に載置
するものであつた。すなわち複数の基板を用意
し、これにメツキ処理により金属突起物を形成し
てボンデイング装置に設定し、基板上の金属突起
物が全てフイルムリード側に転写されれば、この
基板を取りはずし、別な基板を設置し、取りはず
した基板は再度、配線メツキ処理するものであ
る。Conventional technology Transfer bump method (for example, Japanese Patent Application Laid-Open No. 152147-1983
In No. 1), a step of aligning a metal protrusion formed on a substrate with a film lead formed on a long flexible film tape, and transferring and bonding the metal protrusion on the substrate to the film lead side. It is necessary to heat and press the metal protrusions bonded to the film lead side onto the electrodes of the semiconductor element to bond them all at once. Conventionally, the substrate on which metal protrusions are formed is formed on an insulating square or circular substrate made of glass, ceramic, etc., on which metal protrusions of predetermined dimensions are formed, and then the substrate is It was placed on the transfer and bonding mechanism of the bonding device. In other words, prepare multiple substrates, form metal protrusions on them by plating, set them in a bonding device, and once all the metal protrusions on the substrates have been transferred to the film lead side, remove these substrates and use another one. After the board is installed and removed, the wiring is plated again.
発明が解決しようとする問題点
このよう従来の方法においては、金属突起物が
形成された基板を人の手によりボンデイング装置
に載置したりあるいは運搬するために、基板上か
ら前記金属突起物が脱落し、転写歩留りを著じる
しく低下さしたり、限定された面積の基板上に金
属突起物を形成するために、生産の途中で基板上
に金属突起物がなくなると、新しい別な基板と交
換しなければならない。この時に、生産を一時中
断する必要があつた。Problems to be Solved by the Invention In such conventional methods, the metal protrusions are removed from the substrate in order to manually place or transport the substrate on the bonding device. If metal protrusions are lost on the substrate during production, they may fall off and significantly reduce the transfer yield, or they may form on a limited area of the substrate. must be replaced with. At this time, it was necessary to temporarily suspend production.
本発明はかかる点に鑑みてなされたもので、基
板上の金属突起物の脱落がなく、かつ装置の生産
性を高くするものである。 The present invention has been made in view of the above problems, and is intended to prevent metal protrusions on the substrate from falling off and to increase the productivity of the device.
問題点を解決するための手段
本発明は上記問題点を解決するため可撓性フイ
ルムテープのフイルムリードに金属突起物を転写
する機構と、前記金属突起をテープ基板上に形成
する機構とを同一の装置で連続的に実施するもの
である。前記テープ基板は、長尺の可撓性を有す
る材料で、その表面には半導体素子の電極に対応
した位置にメツキ処理できる様に絶縁性マスクを
有している。テープ基板は、メツキ槽内で順次メ
ツキ処理され金属突起物を形成し、次いでボンデ
インツールを有する転写する機構により、可撓性
フイルムテープのフイルムリードと前記金属突起
物とを位置合せし、転写、接合するものである。Means for Solving the Problems In order to solve the above problems, the present invention provides a mechanism for transferring metal protrusions onto the film lead of a flexible film tape and a mechanism for forming the metal protrusions on the tape substrate. The test is carried out continuously using the following equipment. The tape substrate is made of a long flexible material, and has an insulating mask on its surface so that it can be plated at positions corresponding to the electrodes of the semiconductor element. The tape substrate is sequentially plated in a plating bath to form metal protrusions, and then a transfer mechanism having a bonding tool aligns the film leads of the flexible film tape and the metal protrusions, and transfers them. , to be joined.
作 用
前記テープ基板がメツキする機構と転写する機
構とを連続的に通過することにより、テープ基板
への金属突起物の形成とフイルムリードへの転
写・接合を確実に実施する。すなわちメツキする
機構で金属突起物を形成されたテープ基板は連続
的にすぐに転写する機構へ搬送され、フイルムリ
ードと位置合せされ、前記金属突起物を転写する
ため金属突起物を形成後の移動量が極めて少ない
ので、基板からの金属突起物の脱落を防止でき
る。Function: By continuously passing the tape substrate through the plating mechanism and the transfer mechanism, the formation of metal protrusions on the tape substrate and the transfer/bonding to the film lead are reliably performed. In other words, the tape substrate on which metal protrusions have been formed in the plating mechanism is continuously transported to the transfer mechanism, aligned with the film lead, and moved after forming the metal protrusions in order to transfer the metal protrusions. Since the amount is extremely small, it is possible to prevent metal protrusions from falling off from the substrate.
実施例
第１図で本発明の実施例を説明する。可撓性を
有するテープ基板１はメツキ処理機構２とボンデ
イング機構部３の間を連続的に移動、搬送され
る。前記メツキ処理機構２はメツキ液３を満した
メツキ槽４と陽極電極５および電源６からなり電
源６は、マイナス電極がテープ基板１と接し、他
方のプラス電極が陽極電極５に接続される。７は
前記テープ基板１を所定の間隔で送るための移動
機構である。Embodiment An embodiment of the present invention will be explained with reference to FIG. A flexible tape substrate 1 is continuously moved and conveyed between a plating processing mechanism 2 and a bonding mechanism section 3. The plating processing mechanism 2 includes a plating tank 4 filled with a plating solution 3, an anode electrode 5, and a power source 6. The negative electrode of the power source 6 is in contact with the tape substrate 1, and the other positive electrode is connected to the anode electrode 5. 7 is a moving mechanism for feeding the tape substrate 1 at predetermined intervals.
テープ基板１は順次、連続的に移動、搬送８さ
れながら、配線メツキ槽４内で所定形状の金属突
起物を成長させ、洗浄されて、ボンデイング機構
部３へ移動させる。可撓性フイルムテープ９はテ
ープガイド１０に沿つて前記ボンデイング機構部
３へ搬送され、更に前記テープ基板１上の金属突
起物とフイルムリードとを位置合せするためのモ
ニターカメラ１１が設置され、位置合せのためテ
ープガイド１０により可撓性フイルムテープ９を
微調させるか、ステージ１２によりテープ基板１
を微調させるものである。位置合せが終れば、ボ
ンデイングツール１３が下降し、加圧・加熱し、
テープ基板上の金属突起物をフイルムリードに転
写・接合する。転写されて金属突起物がなくなつ
たテープ基板はコマ送りで搬送され、順次メツキ
槽内に浸漬され、再びメツキ処理されるものであ
る。また同時に可撓性フイルムテープもコマ送り
で搬送されリールに順次巻きとられる。 The tape substrate 1 is sequentially and continuously moved and conveyed 8 to grow metal protrusions of a predetermined shape in the wiring plating bath 4 , is cleaned, and then transferred to the bonding mechanism section 3 . The flexible film tape 9 is conveyed to the bonding mechanism section 3 along a tape guide 10, and a monitor camera 11 is installed to align the metal protrusions on the tape substrate 1 and the film lead. For alignment, the flexible film tape 9 is finely adjusted by the tape guide 10, or the tape substrate 1 is moved by the stage 12.
This is to fine-tune the When the alignment is completed, the bonding tool 13 is lowered, pressurized and heated,
Transfer and bond the metal protrusions on the tape substrate to the film lead. The tape substrates that have been transferred and are free of metal protrusions are transported frame by frame, sequentially immersed in a plating bath, and then plated again. At the same time, the flexible film tape is also conveyed frame by frame and sequentially wound onto a reel.
第２図は他の実施例の構成であつて、金属突起
物を形成するテープ基板１がリール２０によつて
メツキ槽４に供給されてメツキ処理され、順次ボ
ンデイング機構部３へ搬送され、ここで可撓性フ
イルムテープ９のフイルムリード側に転写・接合
されて、前記金属突起物がなくなつたテープ基板
１はリール２１に順次巻きとられる２２ものであ
る。 FIG. 2 shows the configuration of another embodiment, in which a tape substrate 1 on which metal protrusions are formed is supplied to a plating tank 4 by a reel 20, is plated, and is sequentially conveyed to a bonding mechanism section 3. The tape substrate 1, which has been transferred and bonded to the film lead side of the flexible film tape 9 and has no metal protrusions, is sequentially wound onto a reel 21.
次に第３図でテープ基板の構成を詳述する。第
３図ａは、テープ基板自体が、長尺のステンレス
隣青銅、ニツケル、銅、アルミニウム等の導電体
の薄板金属テープ３０で構成され、更に絶縁膜３
３が形成されその表面に半導体素子の電極と対応
した位置３１に前記絶縁膜３３による開孔を有
し、前記薄板金属テープ３０をメツキ処理時に陰
極として用い、金属突起物３２を形成させる。絶
縁膜３３は、薄板金属テープ３０の表面層を酸化
物化あるいは蓄化物化処理するか、ポリイミド樹
脂、ポリアミド樹脂、テフロン樹脂、シシリコー
ン樹脂、等の有機膜ほ塗布したあるいは他の酸化
物、窒化物等を形成た構成でも揚良い。３３′は
前記薄板金属テープの裏面へのメツキ処理を防止
するための保護膜である。 Next, the configuration of the tape substrate will be explained in detail with reference to FIG. In FIG. 3a, the tape substrate itself is composed of a long stainless steel thin metal tape 30 made of conductive material such as bronze, nickel, copper, aluminum, etc., and an insulating film 3.
3 is formed and has an opening formed by the insulating film 33 on its surface at a position 31 corresponding to the electrode of the semiconductor element, and the thin metal tape 30 is used as a cathode during the plating process to form a metal protrusion 32. The insulating film 33 may be formed by treating the surface layer of the thin metal tape 30 with oxide or oxide, or by applying an organic film such as polyimide resin, polyamide resin, Teflon resin, silicone resin, or other oxide or nitride film. It is also good to use a structure formed of objects, etc. 33' is a protective film for preventing plating on the back side of the thin metal tape.
第３図ｂは金属突起物３２を形成する以外の領
域を絶縁物３４により埋設した構成である。この
構成は薄板金属テープ３０の半導体素子の電極と
対応する位置のみを残し、凸状に形成せしめ、絶
縁物３４を均一に埋設して形成しても良いし、選
択的に酸化物あるいは窒化物化を施こしても良
い。また他の実施例としてポリイミド樹脂、ポリ
アミド樹脂、ガラス入エポキシ樹脂等の比較的耐
熱性を有する樹脂テープ３５上に銅、アルミニウ
ム、ニツケル、ステンレス等の金属薄板３８を貼
り合せ、この上に絶縁物３７によるマスク層を形
成することもできるこれを第３図ｃに示した。 FIG. 3b shows a structure in which the area other than where the metal protrusion 32 is formed is buried with an insulator 34. This structure may be formed by leaving only the position of the thin metal tape 30 corresponding to the electrode of the semiconductor element and forming it in a convex shape, and embedding the insulator 34 uniformly, or selectively using oxide or nitride. You may also apply As another example, a thin metal plate 38 made of copper, aluminum, nickel, stainless steel, etc. is bonded onto a relatively heat-resistant resin tape 35 made of polyimide resin, polyamide resin, glass-filled epoxy resin, etc., and an insulating material is placed on top of this. A masking layer according to 37 can also be formed, as shown in FIG. 3c.
次に第１図、第２図で示したボンデイング機構
部３での動作状態を第４図で詳述する。テープ基
板１上に形成されたAuの金属突起物３２と可撓
性フイルムテープ９のフイルムリード３９とが位
置合せされる（第４図ａ）。ここで前記可撓性フ
イルムテープ９はポリイミド樹脂、ポリアミド樹
脂、ガラス入りエポキシ樹脂、ポリエステル樹脂
等で構成され、前記金属突起物を転写・接合する
領域には開孔部４０が形成され、Cu箔をエツチ
ング処理し、Snメツキ処理したフイルムリード
３９が突出している。次にボンデイングツール１
３を下降し、加圧・加熱せしむれば、テープ基板
１上の金属突起物３２はフイルムリード３９側に
AuとSnの共晶をつくる転写・接合される。（第
４図ｂ）。 Next, the operating state of the bonding mechanism section 3 shown in FIGS. 1 and 2 will be explained in detail with reference to FIG. 4. The Au metal protrusions 32 formed on the tape substrate 1 and the film leads 39 of the flexible film tape 9 are aligned (FIG. 4a). Here, the flexible film tape 9 is made of polyimide resin, polyamide resin, glass-filled epoxy resin, polyester resin, etc., and an opening 40 is formed in the area where the metal protrusion is to be transferred and bonded, and a Cu foil is formed. A film lead 39 that has been etched and Sn-plated protrudes. Next, bonding tool 1
3 is lowered and pressurized and heated, the metal protrusion 32 on the tape substrate 1 is moved to the film lead 39 side.
Transferred and bonded to create a eutectic of Au and Sn. (Figure 4b).
前記ボンデイングツール１３の加圧・加熱の条
件は、加熱温度230〜400℃で0.1〜１秒間、加圧
はフイルムリード１本当り10〜50ｇで良い。本発
明のボンデイング装置は第４図ｂまでの動作を行
なうものであるが、以後の工程についてものべ
る。フイルムリード３９側に接合された金属突起
物３２と半導体素子４１のアルミ電極４２とを位
置合せし（第４図ｃ）、加圧・加熱したボンデイ
ングツール１３′を下降せしむれば、金属突起物
３２のAuとアルミ電極４２とがAu，Alの合金を
つくり第４図の如く接合される。前記ボンデイン
グツールの加熱温度は300〜500℃で加熱時間は
0.5〜２秒間、加圧力はフイルムリード１本当り
30〜90ｇ程度で良好な接合が得られる。このよう
に、本発明のボンデイング装置は、金属突起物を
テープ基板上に形成し、順次連続して、フイルム
リードに転写・接合できる。 The bonding tool 13 may be pressurized and heated at a heating temperature of 230 to 400° C. for 0.1 to 1 second, and a pressure of 10 to 50 g per film lead. Although the bonding apparatus of the present invention performs the operations up to FIG. 4b, the subsequent steps will also be described. When the metal protrusion 32 bonded to the film lead 39 side and the aluminum electrode 42 of the semiconductor element 41 are aligned (FIG. 4c) and the pressurized and heated bonding tool 13' is lowered, the metal protrusion 32 is bonded to the film lead 39 side. The Au of the material 32 and the aluminum electrode 42 form an alloy of Au and Al and are joined as shown in FIG. The heating temperature of the bonding tool is 300-500℃ and the heating time is
0.5 to 2 seconds, pressure per film lead
A good bond can be obtained with a weight of about 30 to 90 g. In this manner, the bonding apparatus of the present invention can form metal protrusions on a tape substrate and sequentially and continuously transfer and bond them to a film lead.
発明の効果
金属突起物の形成とフイルムリードへの転写・
接合を同一の装置内で連続的に実施できる。すな
わち金属突起物の長尺のテープ基板上に連絡しメ
ツキ法により形成せしめ、これを順次、フイルム
リードに搬送し、順次転写・接合するものである
から、従来発生していた金属突起物を形成する基
板からの前記金属突起物の脱落がない。したがつ
て、著じるしく高い歩留りで金属突起物をフイル
ムリードに転写できる。また、、従来の如く金属
突起物を形成した基板を定期的に交換する必要が
ない。すなわち本発明の場合、金属突起物が連続
的に形成された供給できるので、少なくとも生産
に必要な時間を短縮し更に人員を削減できる等の
効果がある。Effects of the invention Formation of metal protrusions and transfer/transfer to film leads
Bonding can be carried out sequentially in the same equipment. In other words, metal protrusions are connected to a long tape substrate and formed using the plating method, which are then sequentially transferred to a film lead and sequentially transferred and bonded, making it possible to form metal protrusions that previously occurred. The metal protrusions do not fall off from the substrate. Therefore, metal protrusions can be transferred to film leads with a significantly high yield. Furthermore, there is no need to periodically replace the substrate on which metal protrusions are formed, as in the conventional case. That is, in the case of the present invention, since the metal protrusions can be continuously formed and supplied, it is possible to at least shorten the time required for production and further reduce the number of personnel.
第１図は本発明のボンデイング装置の断面図、
第２図は他の実施構成例の断面図、第３図ａ〜ｃ
は、本発明のボンデイング装置に用いるテープ基
板の断面図、第４図ａ〜ｄは本発明のボンデイン
グ装置による工程の断面図である。
１……テープ基板、４……メツキ槽、６……電
源、９……可撓性フイルムテープ、１１……モニ
ターカメラ、１３……ボンデイングツール。
FIG. 1 is a sectional view of the bonding device of the present invention;
Fig. 2 is a cross-sectional view of another implementation configuration example, Fig. 3 a to c
4 is a cross-sectional view of a tape substrate used in the bonding apparatus of the present invention, and FIGS. 4A to 4D are cross-sectional views of steps performed by the bonding apparatus of the present invention. 1... Tape substrate, 4... Plating tank, 6... Power source, 9... Flexible film tape, 11... Monitor camera, 13... Bonding tool.
Claims (1)
送する機構、前記フイルムを搬送する機構と相対
して設置され、半導体の電極と対応した位置に金
属突起を形成する長尺の基板を搬送する機構、前
記フイルムを搬送する機構の上部に設けた加圧・
加熱治具を有する上下機構および前記金属突起を
形成する長尺の基板に金属突起を形成するための
メツキ槽とを備え、前記メツキ槽において前記金
属突起を形成する長尺の基板上に金属突起を形成
させ、前記フイルムのリードと基板上の金属突起
とを位置合せし、前記上下機構の加圧・加熱治具
で、加圧・加熱せしめ基板上の金属突起をフイル
ムのリードに転写・接合する事を特徴とするボン
デイング装置。1. A mechanism for transporting a long film having a lead in the opening, which is installed opposite to the film transporting mechanism, and transports a long substrate on which metal protrusions are formed at positions corresponding to the electrodes of the semiconductor. mechanism, and a pressurizing mechanism provided at the top of the mechanism for transporting the film.
a plating tank for forming metal protrusions on the elongated substrate on which the metal protrusions are to be formed; and a plating tank for forming metal protrusions on the elongated substrate on which the metal protrusions are to be formed; The leads of the film are aligned with the metal protrusions on the substrate, and the metal protrusions on the substrate are transferred and bonded to the leads of the film by applying pressure and heating using the pressure/heating jig of the vertical mechanism. A bonding device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59243643A JPS61121447A (en) | 1984-11-19 | 1984-11-19 | Bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59243643A JPS61121447A (en) | 1984-11-19 | 1984-11-19 | Bonding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61121447A JPS61121447A (en) | 1986-06-09 |
| JPH0330989B2 true JPH0330989B2 (en) | 1991-05-01 |
Family
ID=17106869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59243643A Granted JPS61121447A (en) | 1984-11-19 | 1984-11-19 | Bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61121447A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4980753A (en) * | 1988-11-21 | 1990-12-25 | Honeywell Inc. | Low-cost high-performance semiconductor chip package |
-
1984
- 1984-11-19 JP JP59243643A patent/JPS61121447A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61121447A (en) | 1986-06-09 |
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